SENSORS AND ACTUATORS B-CHEMICAL
·
2023
·
IF 8.4
Zhilin Feng,Hongtao Wang,Yaodan Zhang,Dan Han,Yongqiang Cheng,Aoqun Jian,Shengbo Sang
The development of NO 2 gas sensors with lower operating temperature and good thermal stability is always a challenge to solve. In this work, 2D loose porous ZnO/GaN heterogeneous nanosheets were synthesized by ultrasonic mixing, in which ZnO nanosheets and GaN nanoparticles were prepared by hydrothermal method and solid-state pyrolysis , respectively. BET characterization result showed that the specific surface area of loose porous ZnO nanosheets was 57.24 m 2 /g, and XPS tests proved that the formation of heterogeneous interface between ZnO and GaN can effectively increase the number of negative oxygen ion species on the surface. Noticeably, 15 mol % ZnO/GaN composites (Ga:Zn) exhibited the highest response of 134.5–2 ppm of NO 2 at 125 °C and lower limit of detection of 20 ppb. Furthermore, it showed outstanding selectivity, repeatability and long-term stability. The excellent gas-sensing properties can be attributed to the loose porous structure of ZnO and the formation of n-n heterojunction between ZnO and GaN. The gas-sensing mechanism of ZnO/GaN composites to NO 2 was also discussed in detail.
研究领域:
材料科学
·
传感器技术
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产品关联
DOI
高影响因子
APPLIED CATALYSIS B-ENVIRONMENTAL
·
2025
·
IF 21.1
Yixin Li,Lin Yao,Jinglin Li,Tianqi Yu,Liang Qiu,Muhammad Salman Nasir,Tao Wang,Md Afjalur Rahman,Nirmal Anand,Sharif Md. Sadaf,Baowen Zhou
Dry reforming of methane toward syngas (CH 4 + CO 2 = 2CO + 2H 2 ) presents a proper solution for depleting petroleum and climate change yet remains not industrialized. Herein, NiO x nanoparticles are coupled with GaN nanowires for this target. The as-designed hybrid of NiO x /GaN NWs demonstrates a low onset temperature of 280 o C for dry reforming of methane with a syngas activity of 121.7 mmol·g cat -1 ·h -1 and nearly 100% selectivity. Together with the outstanding stability, a turnover number of 40372 mole syngas per mole Ni species is achieved over 160 cycles without noticeable activity degradation. The correlative kinetic experiments, isotope experiments, in-situ spectroscopic characterizations, as well as density functional theory calculations reveal that the oxidized nickel species with O vacancies and its unique electronic interaction with GaN significantly reduce the apparent activation energy of the reaction, primarily contributing to the superior activity at low temperature. What is more, the evolution track of CH 4 and CO 2 to syngas was comprehensively studied at atomic level, disclosing an obvious anti-coking chemical loop with excellent stability. This work presents a strategy for efficient and stable dry reforming of methane toward syngas under mild conditions.
研究领域:
催化化学
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材料科学
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能源化学
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产品关联
DOI
高影响因子
MICROCHEMICAL JOURNAL
·
2025
·
IF 5.1
Tianjun Xu,Rongchao Li,Tengfei Zhang,Yuhan Li,Hulin Zhang,Zhongyun Yuan,Kai Zhuo
In this study, gallium oxide hydroxide (GaOOH) nanorods were synthesized using a hydrothermal method, which was followed by a high-temperature nitriding process to synthesize gallium nitride (GaN) nanorods. Then, potassium chloride (KCl)-modified GaN nanorod composite materials were prepared using the physical mixing method. The analysis of the humidity sensitivity test demonstrated that the KCl/GaN nanorods with a KCl loading of 2.5 wt% exhibited the best humidity sensitivity, with a resistance change response of 36589.59 under 97% relative humidity (RH), which was 2.51 times that of pure GaN nanorods without KCl doping. The response and recovery times of the KCl/GaN-2.5- wt% nanorod humidity sensor in a 97%-RH environment were 3 s and 80 s, respectively. The response time did not exhibit considerable fluctuations compared with the undoped GaN nanorods, and the recovery time increased. The hierarchical morphology of the GaN nanorods created abundant adsorption sites for water molecules, while the incorporation of KCl enhanced the electrical conductivity of the composite material, thereby resulting in an increase in the magnitude of the resistance changes of the sensor in environments with different humidity conditions. The sensor also demonstrated excellent repeatability and long-term stability, making it suitable for applications in respiratory monitoring.
研究领域:
材料科学
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电子工程
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生物医学工程
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materiomics
·
2022
·
IF 8.589
Tao Han,Zexin Wu,Zhilong Deng,Xiaofeng Zhang,Sidi Yang,Cuicui Chen,Jiajia Zhu,Shufang Ding,Chunzhi Jiang
The narrow bandgap of the low-energy near-infrared (NIR) polymer would lead to overlap between adjacent energy levels, which is a major barrier to the preparation of Vis-NIR polymer bulk heterojunction (BHJ) photodetectors with small responsivity and photocurrent. In this study, a high-performance lateral inorganic-organic hybrid photodetector was constructed to eliminate this barrier by combining GaN nanowires (GaN-NWs) with PDPP3T:PC 61 BM-based BHJ. In stage one, high-quality GaN-NWs were synthesized by the catalyst-free CVD method. The mechanism for controlling GaN-NWs morphology by adjusting the NH 3 flow rate was revealed. In stage two, the GaN-NWs with large electron mobility were used to accelerate the transfer of photogenerated carriers in the BHJ layer. Finally, compared with the BHJ device, the BHJ/GaN device demonstrated obvious improvements in responsivity and photocurrent at the wavelength between 400 and 1000 nm. The responsivity and photocurrent increased over 20-fold at the NIR band of 800–900 nm. Besides, owing to the energy level gradient effect, the BHJ/GaN device has a response speed of 7.8/<5.0 ms, which increases over three orders of magnitude than that of the GaN-NWs-based device ( tr / tf : 7.1/10.9 s). Therefore, the novel device structure proposed in this work holds great potential for preparing high-performance Vis-NIR photodetectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
CHINESE JOURNAL OF CATALYSIS
·
2023
·
IF 16.5
Xuan Li,Xingxing Jiang,Yan Kong,Jianju Sun,Qi Hu,Xiaoyan Chai,Hengpan Yang,Chuanxin He
Electrocatalytic CO 2 reduction reaction (eCO 2 RR) to obtain formate is a promising method to consume CO 2 and alleviate the energy crisis. Indium-based electrocatalysts have demonstrated considerable potential to produce formate. However, their unsatisfactory long-term stability and selectivity restrict their widespread application. In this study, a heterostructure of GaN- and In 2 O 3 -encapsulated porous carbon nanofibers was constructed via electrospinning and the phase transition of eutectic gallium-indium during calcination . The GaN and In 2 O 3 nanoparticle-encapsulated porous carbon nanofibers, when used as electrocatalysts for eCO 2 RR, displayed high formate selectivity with a faradaic efficiency of 87% and maximum partial current density of 29.7 mA cm −2 in a 0.5 mol L −1 KHCO 3 aqueous solution. The existence of the interface can cause a positive shift in the In 3 d binding energy, leading to electronic redistribution. Moreover, the GaN component induced a higher proportion of O-vacancy sites in the In 2 O 3 phase, resulting in improved selectivity for CO 2 -to-formate. In-situ Raman experiments and density functional theory calculations revealed that the interface between GaN and In 2 O 3 could lower the adsorption energy of the key intermediates for formate production, thus providing superior eCO 2 RR performance. In addition, the framework of the porous carbon nanofibers exhibited a large electrochemically active surface area, which enabled the full exposure of the active sites. This study highlights the cooperation between GaN and In 2 O 3 components and provides new insights into the rational design of catalysts with high CO 2 -to-formate conversion efficiencies.
研究领域:
材料科学
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环境科学
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电化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Nano Materials
·
2021
·
IF 5.097
Peng Yang,Haifeng Yang,Zhengyuan Wu,Fuyou Liao,Xiaojiao Guo,Jianan Deng,Qiang Xu,Haomin Wang,Junjie Sun,Fei Chen,Wenzhong Bao,Laigui Hu,Zhongkai Liu,Yulin Chen,Zhi-Jun Qiu,Zhilai Fang,Ran Liu,Chunxiao Cong
Van der Waals heterostructures composed of atomically thin two-dimensional (2D) materials and three-dimensional (3D) materials provide a multidimensional material integration strategy, which combines materials with different characteristics leading to a wider degree of freedom than a single component, and offer a way for developing electronic and optoelectronic devices with multifunctionalities, such as high-frequency electronic devices, photodetectors, valley-spin electronic devices, and so on. This report demonstrates the direct growth of large-area monolayer MoS2 single-crystal nanosheets with a side length of more than 100 μm on 3D GaN substrates by the perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed-assisted chemical vapor deposition (CVD) method. The seeding promoters changed the growth kinetics of MoS2 on the GaN substrate, which is different from the previously reported epitaxial growth behavior. The size of our synthesized single-crystal MoS2 nanosheets is 2 orders of magnitude larger than the reported epitaxially grown MoS2 on the GaN substrate. Meanwhile, the as-synthesized MoS2 by the seed-assisted CVD method has comparable crystal quality as that of the reported epitaxially grown MoS2 on the GaN substrate. Moreover, detailed characterizations indicate that noticeable charge transfer occurs between MoS2 and the GaN substrate, which suggests that the MoS2/GaN heterostructure has great potential applications in the field of light-emitting diodes (LED) and valley-spin electronic devices.
研究领域:
材料科学
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光电子学
·
半导体物理
✓ 已验证
DOI
高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
·
2023
·
IF 8.4
Donghui Li,Dan Han,Yi Chen,Yutao Hong,Qi Duan,Hongtao Wang,Xiuli He,Li Zhao,Weidong Wang,Shengbo Sang
In this work, we developed a high-performance NH 3 sensor based on GaN/rGO nanocomposites via a low-cost solvothermal method and subsequent nitridation process. The morphological, structural, and chemical compositions were investigated to demonstrate that GaN and rGO were coupled together by interfacial modulation, and the GaN/rGO heterostructure chemical bonds are successfully formed. Gas-sensing performance test results show that the fabricated GaN/rGO (2.2 wt%) NH 3 sensor exhibited a high response value (92%), fast response time (11 s), and low limit of detection (500 ppb) at room temperature . In addition, reproducibility, humidity, and long-term stability tests of the GaN/rGO sensor were also conducted in this work. The enhancement sensing mechanisms are attributed to the large specific surface area, the excellent conductivity of rGO, and resistance modulation effect of the heterojunction potential. Hence, the GaN/rGO gas sensor can be regarded as a promising sensing solution for atmospheric and exhaled NH 3 detection at room temperature.
研究领域:
材料科学
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传感器技术
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化学工程
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2016
·
IF 3.15
Ding Wang,Minglu Zhang,Huaijuan Zhuang,Xu Chen,Xianying Wang,Xuejun Zheng,Junhe Yang
(GaN) 1-x (ZnO) x composite nanofibers with hollow structure were prepared by initial electrospinning, and the subsequent calcination and nitridation. The structure and morphology characteristics of samples were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The characterization results showed the phase transition from ZnGa 2 O 4 to (GaN) 1-x (ZnO) x solid-solution under ammonia atmosphere. The preparation conditions were explored and the optimum nitridation temperature and holding time are 750 °C and 2 h, respectively. The photocatalytic properties of (GaN) 1-x (ZnO) x with different Ga:Zn atomic ratios were investigated by degrading Rhodamine B under the visible light irradiation. The photocatalytic activity sequence is (GaN) 1−x (ZnO) x (Ga:Zn = 1:2) > (GaN) 1−x (ZnO) x (Ga:Zn = 1:3) > ZnO nanofibers > (GaN) 1−x (ZnO) x (Ga:Zn = 1:4) > (GaN) 1−x (ZnO) x (Ga:Zn = 1:1). The photocatalytic mechanism of the (GaN) 1−x (ZnO) x hollow nanofibers was further studied by UV–vis diffuse reflectance spectra. The excellent photocatalytic performance of (GaN) 1−x (ZnO) x hollow nanofibers was attributed to the narrow band gap and high surface area of porous nanofibers with hollow structure.
研究领域:
材料科学
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环境科学
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Communications
·
2025
·
IF 4.5
Jialong Lin,Da Hu,Jiabin Lu,Qiusheng Yan
To address the issue of non-environmentally friendly polishing fluids in the chemical mechanical polishing (CMP) of single-crystal GaN, a CMP method based on Al metal contact corrosion is proposed. Results from static contact corrosion experiments indicates that a Ga-O corrosion layer formed on the surface of single-crystal GaN in areas are in close contact with Al metal in a Na 2 SO 4 solution. A resin-Al and resin-Cu plates were prepared for the polishing experiments, the polishing effect of resin-Al plate is better than that of resin-Cu plate. Using a resin-Al plate in the Na 2 SO 4 solution, a material removal rate (MRR) of 150–175 nm/h and a surface roughness Ra of 1.3–1.5 nm(measurement area:0.45 × 0.60 mm) were obtained. Upon adding silica sol abrasive to the Na 2 SO 4 solution, the MRR reached 225–240 nm/h and Ra increased to 1.8–2.3 nm. This indicates that while the addition of abrasives enhances mechanical removal, it decreases the contact between the GaN workpiece and the Al metal, thereby weakening the chemical action. The material removal mechanism of single-crystal GaN based on Al metal contact corrosion involves Al metal acting as the anode and losing electrons. Dissolved oxygen (O 2 ) in the solution capturing these electrons to form reactive oxygen species (ROS). These ROS react with H + to generate H 2 O 2 , whose highly unstable O O bonds break down to form hydroxyl radical (•OH). These •OH corrode single-crystal GaN, forming a Ga 2 O 3 corrosion layer, which is then removed mechanically.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Analytical Methods
·
2019
·Vol. 11
·期 31
·3981-3986
·
IF 2.378
Lei Zhao,Xinsheng Liu,Bin Miao,Zhiqi Gu,Jin Wang,HuoXiang Peng,Jian Zhang,Bin Zeng,Jiadong Li
In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution. The DEG-AlGaN/GaN HEMT sensor consists of two extended gate sensing units, which combine the differential method with the extended gate structure. Ionic pollutant Fe3+ is used to test the feasibility of the device. Compared to the conventional AlGaN/GaN HEMT sensor, DEG-AlGaN/GaN HEMT sensors can effectively reduce the effect of noise factors and successfully improve the detection limit to 10 fM. At the same time, the DEG sensor shows that Fe3+ can be detected in a wide range of concentrations, varying from 10 fM to 100 μM, and it shows better linearity (R2 = 0.9955) than the conventional AlGaN/GaN HEMT sensor. These results demonstrate that the unique DEG design can overcome the drawbacks of the conventional AlGaN/GaN HEMT sensor, and significantly improve the overall performance of the AlGaN/GaN HEMT sensor. As a result, this novel sensor has the potential to be a real-time and high-performance test tool for environmental monitoring.
研究领域:
传感器技术
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环境监测
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
ANALYTICAL CHEMISTRY
·
2024
·
IF 6.7
Jialing Zhou,Hui Huang,Qian Wang,Zhirui Li,Shunji Chen,Jun Yu,Yuan Zhong,Jing Chen,Huolin Huang
Owing to the separation of field-effect transistor (FET) devices from sensing environments, extended-gate FET (EGFET) biosensor features high stability and low cost. Herein, a highly sensitive EGFET biosensor based on a GaN micropillar array and polycrystalline layer (GMP) was fabricated, which was prepared by using simple one-step low-temperature MOCVD growth. In order to improve the sensitivity and detection limit of EGFET biosensor, the surface area and the electrical conductivity of extended-gate electrode can be increased by the micropillar array and the polycrystalline layer, respectively. The designed GMP-EGFET biosensor was modified with l-cysteine and applied for Hg2+ detection with a low limit of detection (LOD) of 1 ng/L, a high sensitivity of −16.3 mV/lg(μg/L) and a wide linear range (1 ng/L-24.5 μg/L). In addition, the detection of Hg2+ in human urine was realized with an LOD of 10 ng/L, which was more than 30 times lower than that of reported sensors. To our knowledge, it is the first time that GMP was used as extended-gate of EGFET biosensor.
研究领域:
生物传感技术
·
材料科学
·
环境监测
✓ 已验证
产品关联
DOI
PubMed
高影响因子
International Journal of Minerals Metallurgy and Materials
·
2025
·Vol. 32
·期 4
·964-972
·
IF 7.2
Han Dan,Liu Xiaoru,Li Donghui,Shi Jiexu,Wang Yu,Wang Yuxuan,Wang Hongtao,Sang Shengbo
In this work, we realized a room-temperature nitrogen dioxide (NO 2 ) gas sensor based on a platinum (Pt)-loaded nanoporous gallium nitride (NP-GaN) sensing material using the thermal reduction method and coreduction with the catalysis of polyols. The gas sensor gained excellent sensitivity to NO 2 at a concentration range of 200 ppm to 100 ppb, benefiting from the loading of Pt nanoparticles, and exhibited a short response time (22 s) and recovery time (170 s) to 100 ppm of NO 2 at room temperature with excellent selectivity to NO 2 compared with other gases. This phenomenon was attributed to the spillover effect and the synergic electronic interaction with semiconductor materials of Pt, which not only provided more electrons for the adsorption of NO 2 molecules but also occupied effective sites, causing poor sites for other gases. The low detection limit of Pt/NP-GaN was 100 ppb, and the gas sensor still had a fast response 70 d after fabrication. Besides, the gas-sensing mechanism of the gas sensor was further elaborated to determine the reason leading to its improved properties. The significant spillover impact and oxygen dissociation of Pt provided advantages to its synergic electronic interaction with semiconductor materials, leading to the improvement of the gas properties of gas sensors.
研究领域:
材料科学
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传感器技术
·
环境监测
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）