ACS Applied Electronic Materials
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2025
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IF 4.7
Xiaoyan Li,Fangjun Wang,Yubin Hu,Nan Jiang,Xiaosheng Liu,Xianquan Wei,Yanping Xiao,Wei Hu
During the past decade, hybrid inorganic–organic perovskites (HIOPs) and amorphous metal-oxide semiconductors (AMOSs) have attracted enormous interest in the construction of optoelectronic and electronic devices, respectively. Herein, a liquid-phase epitaxy method is introduced for the first time to construct phenylethylamine lead iodide (PEAPbI) crystals on an indium gallium zinc oxide (IGZO) film, which is obtained by the sol–gel method. The fundamental material and structural properties are performed. Compared with a pristine layer, a bilayer of the PEAPbI/IGZO absorber shows improved absorption capability in the spectrum from ultraviolet to visible. A heterojunction photodetector (HJPD) is constructed and compared with the PEAPbI crystal device. Under the incident light of 365 and 405 nm, the photo-to-dark current ratio (PDCR) and responsivities (R) of the HJPD are about 10 times higher than those of the latter, and the detectivities (D*) increase by 2 orders of magnitude as well. The device’s working mechanism for the HJPD is then discussed. Based on the type-II energy band structure, it is found that the photogenerated carriers can be separated more efficiently in the heterostructure device and realize the enhancement of the device’s photoresponse properties. This work provides a novel approach to building heterostructures for large-area, low-cost, and high-performance optoelectronic devices.
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2019
·Vol. 31
·期 2
·1547-1553
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IF 2.195
Jiang Wenya,Peng Cong,Yuan Yanyu,Yang Shibo,Li Xifeng
In this paper, the indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with chitosan (CS) gate dielectric are prepared by the conventional photolithography technique on a pilot line. As-prepared devices on 200 × 200 mm substrate is very uniform, and have good performance of high on/off drain current ratio ~ 10 −6 , low subthreshold swing ~ 0.24, low-threshold voltage ~ 0.20 V and high-visible light transmittance > 90%. The glucose oxidase is drop-cased on the CS gate dielectric surfaces to make fully transparent CS-based IGZO TFTs with sensitivity to glucose. It is found that the current noticeably changes with increasing glucose concentrations. Herein, the glucose detection range from 0.5 to 30 mM covers the normal range of human blood glucose concentration. Moreover, the response time for glucose sensing is < 10 s, which is effective in detecting glucose. The results suggest that the CS-based IGZO TFTs can be used to detect glucose and provides a simple process to achieve low-cost- and larger-area fabrication of biosensors.
研究领域:
电子学
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材料科学
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生物传感
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纳米技术
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SENSORS AND ACTUATORS A-PHYSICAL
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2025
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IF 4.9
Yubin Yuan,Shujing Zhao,Qiang Wu,Zifan Li,Chuanyu Han,Xin Li,Long Hu,Mingchao Yang,Weihua Liu,Li Geng
Biological perception systems are renowned for their ability to process environmental stimuli with remarkable energy efficiency, primarily through spike-based communication and event-driven mechanisms. Inspired by these, in this paper, we propose an infrared artificial neuromorphic perception neuron (IR-ANPN) designed to detect infrared (IR) light, enabling sensory perception beyond the visible spectrum. The IR-ANPN is designed based on a one-transistor-one-memristor (1T1M) architecture, which consists of a PbS quantum dots-decorated Indium Gallium Zinc Oxide (IGZO) thin film transistor (PbS-QDs/IGZO TFT) and an NbO x Mott memristor. The PbS-QDs/IGZO TFT is responsible for detecting infrared light stimuli, while the NbO x Mott memristor converts these stimuli into neuromorphic spikes. The IR-ANPN can operate in an event-driven mode, which means it transmits spikes only when exposed to IR light, ensuring energy efficiency by remaining dormant in the absence of relevant stimuli. The paper also showcases the potential of the IR-ANPN by constructing a neuromorphic infrared detection array. Combined with a spiking neural network (SNN), the system achieves 92 % recognition accuracy on the MNIST dataset by encoding pixel intensity as spiking frequency. The IR-ANPN architecture enhances sensory capabilities through a neuromorphic approach, enabling the detection of non-visible wavelengths with remarkable energy efficiency and laying the foundation for future intelligent sensing technologies.
研究领域:
神经形态工程
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红外传感
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忆阻器器件
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光电子学
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人工智能硬件
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ADVANCED FUNCTIONAL MATERIALS
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2026
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IF 19.9
Chengyao Yang,Ruchao Gong,Zihan Wang,Lanyu Nie,Jialin Yao,Zhicheng Wang,Yong Dai,Huafei Guo,Sai Jiang,Jinrong Huang,Qixuan Zhong,Sheng Li
Reliable perception in complex and dynamically degraded environments remains a central challenge for both biological nervous systems and next-generation embodied intelligent systems. Biological organisms mitigate uncertainty via complementary bimodal perception, where various sensory modalities jointly sustain adaptive behaviors. Inspired by the star-nosed mole, we report an artificial visuo-tactile afferent nerve based on an AgBiS 2 quantum dot (QD)/IGZO heterojunction optoelectronic synaptic transistor. The artificial nerve supports sensory acquisition, neural-like signal encoding, synaptic modulation, and adaptive actuation within a unified neuromorphic framework. Benefiting from interfacial carrier separation and persistent photoinduced charge dynamics, this synaptic transistor exhibits reconfigurable synaptic plasticity with intrinsically coupled bimodal synaptic modulation. External visuo-tactile stimuli are first transformed into unified neuromorphic responses and subsequently mapped to threshold-governed robotic behaviors, including directional motion, turning, and grasping. Device-informed results demonstrate that device-enabled bimodal cooperation enhances recognition robustness under degraded perceptual conditions. This work establishes a compact, physically grounded framework integrating bimodal perception and adaptive intelligence, with potential implications for next-generation bioinspired neuromorphic systems.
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ADVANCED MATERIALS
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2022
·Vol. 34
·期 36
·2203224
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IF 32.086
Yanbing Yang,Jingfeng Wang,Wanting Huang,Guojia Wan,Miaomiao Xia,Duo Chen,Yun Zhang,Yiming Wang,Fuding Guo,Jie Tan,Huageng Liang,Bo Du,Lilei Yu,Weihong Tan,Xiangfeng Duan,Quan Yuan
Urinalysis is attractive in non-invasive early diagnosis of bladder cancer compared with clinical gold standard cystoscopy. However, the trace bladder tumor biomarkers in urine and the particularly complex urine environment pose significant challenges for urinalysis. Here, a clinically adoptable urinalysis device that integrates molecular-specificity indium gallium zinc oxide field-effect transistor (IGZO FET) biosensor arrays, a device control panel, and an internet terminal for directly analyzing five bladder-tumor-associated proteins in clinical urine samples, is reported for bladder cancer diagnosis and classification. The IGZO FET biosensors with engineered sensing interfaces provide high sensitivity and selectivity for identification of trace proteins in the complex urine environment. Integrating with a machine-learning algorithm, this device can identify bladder cancer with an accuracy of 95.0% in a cohort of 197 patients and 75 non-bladder cancer individuals, distinguishing cancer stages with an overall accuracy of 90.0% and assessing bladder cancer recurrence after surgical treatment. The non-invasive urinalysis device defines a robust technology for remote healthcare and personalized medicine.
研究领域:
生物医学工程
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癌症诊断
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生物传感器
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医疗技术
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PubMed
高影响因子
ACS Sustainable Chemistry & Engineering
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2020
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IF 7.632
Shaolong Li,Yang Liu,Yusi Che,Jianxun Song,Yongchun Shu,Jilin He,Baoqiang Xu,Bin Yang
A facile electrochemical method was used for the first-time recovery of an In–Ga–Zn alloy from a spent indium–gallium–zinc oxide (IGZO). In this work, the molar ratio of In, Ga, and Zn in the alloy is almost the same as that in the initial IGZO after it was electrochemically recovered. For the process, a graphite crucible was used as the cathode to collect the electrolytic products since liquid gallium can be infiltrated into almost all metals to form alloys. The oxygen and carbon contents were only 220 and 130 ppm, respectively, and the yield can reach 98 wt %. The process was simple, efficient, and sustainable and can be extended to large-scale production. Moreover, the obtained alloy was used as raw material for the preparation of oxide composite powders by a coprecipitation method, which can be utilized for preparing the IGZO target. The size of the powder was between 40 and 50 nm, and the distribution of each element was uniform. This article offers a reference for the electrodeoxidation of all gallium-containing oxides. Meanwhile, it also provides a concept for electrolytically recovered alloys directly used as raw materials for the preparation of IGZO.
研究领域:
材料科学
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电化学
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回收
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纳米技术
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高影响因子
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