Nanophotonics
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2020
·Vol. 9
·期 8
·2407-2414
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IF 7.491
Yuan Liu,Gongxun Bai,Li Jiang,Youjie Hua,Liang Chen,Shiqing Xu
Ultrathin two-dimensional (2D) materials have drawn great attention in recent years due to their promising applications in biomedicine and atomically optoelectronic devices. In this work, we have fabricated a 2D In 2 Se 3 nanosheet doped with Nd 3+ ions via the two-step method of solid phase synthesis and liquid exfoliation. Owing to the special inner 4f-4f energy level transitions, lanthanide ions can emit photons with almost the same energy in different environments. Here, a stable near-infrared luminescence from Nd 3+ -doped 2D In 2 Se 3 nanosheets has been realized, which includes emission bands around 910, 1057, and 1324 nm. The doping of Nd 3+ ions extends the emission region of In 2 Se 3 nanosheets. Moreover, the photoluminescence mechanism of Nd 3+ ions was investigated through a series of optical measurements. This work not only provides a reliable method to fabricate lanthanide ion-doped 2D materials but also possesses a great significance for luminescence study of lanthanide ions in the 2D matrix.
研究领域:
材料科学
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光学
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纳米技术
✓ 已验证
DOI
高影响因子
ACS Nano
·
2021
·
IF 15.881
Shuhao Xiao,Xinyan Li,Wensi Zhang,Yong Xiang,Tingshuai Li,Xiaobin Niu,Jun Song Chen,Qingyu Yan
Metal selenides are considered as a group of promising candidates as the anode material for sodium-ion batteries due to their high theoretical capacity. However, the intrinsically low electrical and ionic conductivities as well as huge volume change during the charge-discharge process give rise to an inferior sodium storage capability, which severely hinders their practical application. Herein, we fabricated In2Se3/CoSe2 hollow nanorods composed of In2Se3/CoIn2/CoSe2 by growing cobalt-based zeolitic imidazolate framework ZIF-67 on the surface of indium-based metal–organic framework MIL-68, followed by in situ gaseous selenization. Because of the CoIn2 alloy phase in between In2Se3 and CoSe2, a heterostructure consisting of two alloy/selenide interfaces has been successfully constructed, offering synergistically enhanced electrical conductivity, Na diffusion process, and structural stability, in comparison to the single CoIn2-free interface with only two metal selenides. As expected, this nanoconstruction delivers a high reversible capacity of 297.5 and 205.5 mAh g–1 at 5 and 10 A g–1 after 2000 cycles, respectively, and a superior rate performance of 371.6 mAh g–1 at even 20 A g–1.
研究领域:
材料科学
·
能源存储
✓ 已验证
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Zengguang Shi,Yukun Xiao,Mian Li,Jianfeng Cai,Yanmei Chen,Jun Jiang,Xiaoping Ouyang,Zhifang Chai,Qing Huang
Van der Waals (vdW) layered materials have gained significant attention owing to their distinctive structure and unique properties. The weak interlayer bonding in vdW layered materials enables guest atom intercalation, allowing precise tuning of their physical and chemical properties. In this work, a ternary compound, Ni x In 2 Se 3 (x = 0–0.3), with Ni randomly occupying the interlayers of In 2 Se 3 , is synthesized via an intercalation route driven by electron injection. The intercalated Ni atoms act as “anchor points” within the interlayer of In 2 Se 3 , which effectively suppresses the phase transition of In 2 Se 3 at elevated temperatures. Furthermore, the disordered Ni intercalation significantly enhanced the electrical conductivity of In 2 Se 3 through electron injection, while reducing the thermal conductivity due to the interlayer phonon scattering, leading to an improved thermoelectric performance. For instance, the thermoelectric figure of merit (ZT) of Ni 0.3 In 2 Se 3 increased by 86% (in-plane) and 222% (out-of-plane) compared to In 2 Se 3 at 500 °C. These findings not only provide an effective strategy to enhance the performance of layered thermoelectric materials but also demonstrate the potential of intercalation chemistry for expanding the application scope of van der Waals (vdW) layered materials.
研究领域:
材料科学
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凝聚态物理
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能源材料
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纳米科技
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热电转换
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Science China-Information Sciences
·
2019
·Vol. 62
·期 12
·1-8
·
IF 2.731
Yang Huai,Xiao Mengqi,Cui Yu,Pan Longfei,Zhao Kai,Wei Zhongming
Two-dimensional (2D) ferroelectricity is considered to have significant potential for information storage in the future. Semiconducting ferroelectrics that are stable at room temperature afford many possibilities for the assembly of various high-performance heterostructures and fabricating multifuntional devices. Herein, we report the synthesis of a stable van der Waals (vdW) single-crystal semiconductor α -In 2 Se 3 . Piezoresponse force microscopy (PFM) measurements demonstrated the out-of-plane ferroelectricity in ∼15 layers α -In 2 Se 3 at room temperature. Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α -In 2 Se 3 /WSe 2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small switching voltage. The distinct resistance switches were further analyzed by band alignment of the heterostructure under different polarizations by first principle calculations. Nonvolatile memory based on vdW ferroelectric heterostructure could provide a novel platform for developing 2D room-temperature ferroelectrics in information storage.
研究领域:
材料科学
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纳米电子学
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铁电器件
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二维材料
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非易失性存储
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Weidong Dai,Cheng Qi,Jinpeng Zhao,Honglai Li,Weichang Zhou,Fang Li,Yipeng Zhao,Yicheng Wang,Xing Xu,Liang Ma,Xiaolin Wei
Two-dimensional van der Waals heterostructures have emerged as promising candidates for next-generation optoelectronic devices owing to their tunable band structures and strong light-matter interactions. However, achieving high-performance photodetection and neuromorphic functionalities within a single platform remains a major challenge, particularly in controlling distinct charge transport pathways of the same material system. Here, we report a multifunctional NbOCl2/α-In2Se3 heterojunction device that integrates three conductive pathways: a NbOCl2 channel, a hybrid vertical transport channel combining NbOCl2 and α-In2Se3, and an α-In2Se3 surface channel. This unique trichannel design enables efficient parallel carrier transport, resulting in remarkable optoelectronic performance characterized by a high responsivity of 2933 A/W, an ultrahigh external quantum efficiency of 7.67 × 105%, and a detectivity of 2.29 × 1012 Jones. Furthermore, the device exhibited fast photoresponse characteristics, with fast response time of 52 ms and slow decay time of 2122 ms. More importantly, the device demonstrates superior synaptic plasticity with high learning retention of 6.58 μA and low forgetting rate of 0.073, as quantitatively described by the Wickelgren power-law model. Using the optoelectronic synaptic behavior of the device, we simulated learning and forgetting in neural networks, and achieved an accuracy of 92.5% on the MNIST handwritten digit data set. This work highlights the potential of NbOCl2/α-In2Se3 heterostructures as a versatile platform for integrated optoelectronic systems, enabling intelligent sensing and neuromorphic computing.
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Wen Li,Mingjin Dai,Yunxia Hu,Hongyu Chen,Xiaojun Zhu,Qingxin Yang,PingAn Hu
Although single ultra-high-performance indicators have been achieved based on two-dimensional (2D) semiconductors, the comprehensive performances of the photodetectors of them are not so desirable. The response speed and responsivity are two key figures of merit for photodetectors, while these two parameters are always mutually suppressive and can not be synchronously satisfied. Here, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In2Se3-based photodetectors by applying the mechanical strain and producing the piezoresistive effect, which can synergistically modulate the band structure and boost the overall photodetecting performances. Through studying the optoelectronic properties of In2Se3 photodetector under strain modulations, we found that the responsivity under 0.65% tensile strain is improved by almost 68.6% on average, while responsivity under 0.65% compressive strain is lowered by about 57.3% in the wavelength range of 200–1000 nm. More importantly, the response speed of the In2Se3-based photodetector under two different mechanical strains rises distinctly (from 244 to 214 and 180 μs, accordingly). The strain-engineering can accommodate the band structure and enhance the electric and optical properties of the semiconducting crystals, ultimately realizing high-performance photodetectors. The strategy proposed in this work for improving the performance of photodetectors provides a promising route to practical applications in next-generation optoelectronic devices.
研究领域:
光电子学
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材料科学
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纳米技术
·
半导体物理
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Yunxia Hu,Hongying Yang,Jingtao Huang,Xin Zhang,Biying Tan,Huiming Shang,Shichao Zhang,Wei Feng,Jingchuan Zhu,Jia Zhang,Yong Shuai,Dechang Jia,Yu Zhou,PingAn Hu
Near-infrared (NIR) synaptic devices integrate NIR optical sensitivity and synaptic plasticity, emulating the basic biomimetic function of the human visual system and showing great potential in NIR artificial vision systems. However, the lack of semiconductor materials with appropriate band gaps for NIR photodetection and effective strategies for fabricating devices with synaptic behaviors limit the further development of NIR synaptic devices. Here, a two-terminal NIR synaptic device consisting of the In2Se3/MoS2 heterojunction has been constructed, and it exhibits fundamental synaptic functions. The reduced band gap and potential barrier of In2Se3/MoS2 heterojunctions are essential for NIR synaptic plasticity. In addition, the NIR synaptic properties of In2Se3/MoS2 heterojunctions under strain have been studied systematically. The ΔEPSC of the In2Se3/MoS2 synaptic device can be improved from 38.4% under no strain to 49.0% under a 0.54% strain with a 1060 nm illumination for 1 s at 100 mV. Furthermore, the artificial NIR vision system consisting of a 10 × 10 In2Se3/MoS2 device array has been fabricated, exhibiting image sensing, learning, and storage functions under NIR illumination. This research provides new ideas for the design of flexible NIR synaptic devices based on 2D materials and presents many opportunities in artificial intelligence and NIR vision systems.
研究领域:
光电子学
·
神经形态工程
·
人工智能
·
材料科学
·
纳米技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）