ACS Applied Materials & Interfaces
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2020
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IF 8.758
Miaomiao Yu,Yunxia Hu,Feng Gao,Mingjin Dai,Lifeng Wang,PingAn Hu,Wei Feng
Multilayer InSe is a promising material for high-performance optoelectronic applications because of its small direct band gap and good light absorption. However, as a photoconductive photodetector, multilayer InSe photodetectors endure large dark current and high driving power. In this work, we study the electrical properties of InGaSe alloys and demonstrate the high-performance devices based on multilayer InSe–In0.24Ga0.76Se van der Waals heterojunctions (vdWHs). The electrical properties of InGaSe alloy samples strongly depend on the ratio of In to Ga, and the In0.24Ga0.76Se alloy shows a p-type transport behavior. More importantly, a multilayer InSe–In0.24Ga0.76Se vdWH device is demonstrated as a high-performance forward diode, photodiode, and self-powered photodetector (SPPD). The multilayer InSe–In0.24Ga0.76Se diode shows a high forward rectification ratio of over 103 without gate modulation at room temperature, which is superior to most of the multilayer vdWH devices. Moreover, the vdWH photodiode has a broadband photoresponse spectrum (400–1000 nm) and a high-performance photoresponse. The light switching ratio, detectivity (D*), and responsivity (R) are 103, 1012 Jones, and 49 A W–1 for 400 nm illumination, respectively. Furthermore, the vdWH SPPD also shows a sensitive photoresponse to a broadband spectrum of 400–1000 nm. Our work offers an opportunity for multilayer vdWH device applications in high-performance electronic and optoelectronic devices.
研究领域:
光电子学
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材料科学
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纳米电子学
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半导体物理
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二维材料
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
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2025
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IF 13.2
Mingyang Gao,Bohang Zhang,Yutian Ma,Xinyuan Du,Chunxue Zhai,Zhiyong Zhang,Wu Zhao
Simultaneous monitoring of temperature and gas concentration is crucial in many practical scenarios, as these two parameters are often strongly coupled. However, conventional sensing platforms typically rely on multiple single-function sensors, increasing system complexity and limiting their applicability. In this work, we first develop a rigid multi-wall carbon nanotubes (MWCNTs)‑indium selenide (InSe) sensor with excellent dual-mode temperature and nitrogen dioxide (NO 2 ) sensing capabilities, achieving high thermal sensitivity and ppb-level gas detection. Building on this foundation, a wearable version of the sensor is fabricated, enabling robust performance under mechanical deformation. Finally, the flexible device is integrated into a compact system featuring two independent sensing channels, real-time display, and threshold-triggered alarms. This study demonstrates a simple yet powerful strategy to realize multifunctional environmental sensing with a single sensor unit and highlights its strong potential for next-generation wearable electronics and intelligent environmental monitoring.
研究领域:
材料科学
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传感器与仪器
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可穿戴电子
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环境监测
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纳米技术
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产品关联
DOI
高影响因子
ADVANCED MATERIALS
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2026
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IF 29.1
Bo Zhang,Lianying Zhu,Zhiwen Chen,Ying Zhang,Bosen Wang,Zhipeng Wang,Shaoxiong Wu,Xiaping Chen,Feng Zhang,Maoyuan Wang,Huolin Huang,Bin Xiang,Deyi Fu,Rong Zhang
Ferromagnetic van der Waals (vdW) heterostructures are pivotal for next-generation spintronics, especially in realizing novel functionalities like antisymmetric magnetoresistance (ASMR). While ASMR holds immense potential for multi-state memory and logic operations, achieving stable performance across a broad range of conditions and realizing diverse multi-state functionalities remain key challenges. Here, we report the demonstration of multi-state ASMR signals in a Fe 3 GaTe 2 /InSe/Fe 3 GaTe 2 vdW heterostructure, effectively operating up to 320 K. Intriguingly, the conventional three-state ASMR undergoes a unique temperature-induced shape reversal, which is precisely correlated with the temperature-dependent crossover of the coercive fields of the two Fe 3 GaTe 2 layers. Through adapted measurement configurations, an unconventional four-state ASMR, featuring distinct high, intermediate-1, intermediate-2, and low resistance states, has been obtained, holding significant promise for enhancing multi-state memory density. Crucially, the device exhibits superior signal stability across wide variations in bias current (0.01–100 µA ) and magnetic field angle (0 ° –360 ° ). Programmable prototype devices demonstrating highly distinguishable states are also presented. The junction resistance of our devices is only a few kiloohms owing to the perfect Fermi level alignment between Fe 3 GaTe 2 and InSe, making them highly compatible with complementary metal–oxide–semiconductor circuits. This work lays a solid foundation for future stable multi-state memory applications.
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DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）