Advanced Optical Materials
·
2021
·Vol. 10
·期 1
·2101669
·
IF 9.926
Zhihao Zhou,Shuai Zhang,Yakun Le,Hong Ming,Yang Li,Shi Ye,Mingying Peng,Jianrong Qiu,Guoping Dong
Spinel configuration is a kind of broadly considered host candidate when designing persistent luminescence (PersL) materials due to the easy generation of vacancies and anti-site defects. Here, a new strategy of defect enrichment for the activation of PersL is proposed, and in contrast to the spinel configuration, it is demonstrated that the crystal structure of near inverse spinel ensures more numerous defects to activate the near-infrared (NIR) PersL of Fe 3+ . Fe 3+ -doped MgGa 2 O 4 displays the PersL band in the range of 600 to 900 nm and possesses a super-long PersL duration time >15 h. The optical analysis and the calculation of density functional theory unravel that the near inverse spinel structure can lower the carrier transfer barriers to accelerate the formation of carrier trap states within the bandgap. Therefore, more numerous defects in this structure may participate in the trapping and de-trapping process by comparison with the normal spinel configuration. These findings are expected to accelerate the development of new PersL materials through Fe 3+ doping toward versatile biological applications in NIR window.
研究领域:
材料科学
·
光学物理
·
生物医学工程
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DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Xinyuan Lyu,Luchao Ren,Le Xin,Xianfu Luo,Hui Peng,Zhichao Dong,Cuncheng Li,Panpan Lyu,Mingwei Zhang
A novel series of (1- x )MgGa 2 O 4 - x BaCu(B 2 O 5 ) ( x = 0.1–0.5) microwave dielectric ceramics were prepared by solid phase method. By adding BaCu(B 2 O 5 ) additives, the sintering temperature of MgGa 2 O 4 ceramics was reduced from 1410 °C to 925 °C. Through an analysis of the trend in packing fraction and FWHM value of T 2g Raman peak, the underlying influence mechanism of various intrinsic factors on the dielectric loss of ceramic were revealed. And the density, as the external factors, exhibits a positive correlation with the dielectric constant and Q × f value. In addition, the high bond strength of Ga-site reduces lattice distortion and consequently enhances the frequency temperature coefficient. The microwave dielectric properties of (1- x )MgGa 2 O 4 - x BaCu(B 2 O 5 ) ( x = 0.3) are found to be superior at a sintering temperature of 925 °C (ε r = 9.42, Q × f = 35,480 GHz, τ f = −22.7 ppm/°C, at 14 GHz). Moreover, the chemical compatibility of ceramics cofiring with Ag electrode makes them a highly promising substrate for microwave communications.
研究领域:
材料科学
·
物理学
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Zhu Ange,Wang Jiawen,Xia Zhouyang,Qin Fanlei,Li Yinyan,Wang Jianfeng,Bartosiewicz Karol,Li Yan,Bai Gongxun
High-radiant-intensity broadband near-infrared (NIR) emitters are highly desirable for nondestructive testing, night-vision imaging, and information encryption. However, the exploration of phosphors that possess both high luminous efficiency and outstanding thermal stability continues to pose significant difficulties. Among various NIR phosphor systems, Cr 3+ -doped MgGa 2 O 4 (MGO:Cr 3+ ) exhibits characteristic broadband emission. Herein, Bi 3+ ions were incorporated as sensitizers into the MGO:Cr 3+ phosphor system, resulting in substantial enhancements in photoluminescence (PL), mechanoluminescence (ML), and thermal stability. The Bi 3+ co-doping enhanced the NIR PL intensity to 4.0 times and the ML output to 1.45 times those of the Cr 3+ singly doped reference, indicating a pronounced sensitization effect and improved energy transfer efficiency. Furthermore, the emission-intensity retention at 423 K improved from 49.29 to 82.88%, confirming a significant enhancement in the thermal stability of the NIR emission. A broadband NIR phosphor-converted light-emitting diode (pc-LED) assembled by coupling the Bi 3+ , Cr 3+ -co-doped MGO with a blue LED further demonstrated the material’s potential for nondestructive testing, night-vision imaging, and anti-counterfeiting.
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产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Mingxin Zhou,Panlai Li,Xiaoxue Huo,Xue Meng,Hao Suo,Guodong Zhang,Xiaojun Wang,Zhijun Wang
Multimodal luminescence materials exhibiting multiple stimulus responses are highly favored in optical anti-counterfeiting and information encryption applications. However, this static luminescence under fixed stimuli remains vulnerable to replication. The development of dynamic multicolor luminescent materials offers an effective solution, yet integrating multidimensional dynamic luminescence within a single material remains challenge. Here, this work introduces Tb 3+ capture centers into the self-activated luminescent host MgGa 2 O 4 -featuring an alternating layered structure and abundant defects-to construct efficient energy transfer channels. This design enables not only static multicolor luminescence dependent on concentration and interplanar spacing, but also, for the first time, stable dynamic multicolor luminescence modulated by four independent dimensions: excitation wavelength, time, temperature, and pressure. In particular, the time domain reveals dynamic photoluminescence with tunable evolution rates, as well as visible–near-infrared dual-band persistent luminescence. These unique optical properties provide strong potential for advanced anti-counterfeiting and visual temperature/stress sensing. Moreover, this work proposes a 4D coupled dynamic encryption system that integrates self-destruction protection and memory fault-tolerance, thereby greatly reducing the risk of information leakage. Combined experimental and theoretical analyses further elucidate the underlying mechanisms, opening new avenues for the design of multidimensional dynamic multicolor luminescent materials.
研究领域:
材料科学
·
光学材料
·
发光与光子学
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防伪技术
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信息安全
·
固态化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
MATERIALS RESEARCH BULLETIN
·
2015
·
IF 2.288
J.L. Wang,E.H. Song,M. Wu,W.B. Dai,S. Ye,Q.Y. Zhang
Selectively enhanced green upconversion (UC) and near-infrared (NIR) downconversion (DC) emissions of Er 3+ by Yb 3+ -Mn 2+ dimer sensitizing have been demonstrated in Er 3+ /Yb 3+ /Mn 2+ tri-doped spinel MgGa 2 O 4 upon excitation of 980 nm laser diode (LD). By optimizing the doping rate of Mn 2+ , the intensity ratio of green to red UC emission intensities of Er 3+ (G/R) could be enhanced about 10 times. Meanwhile, the 1.5 μm NIR DC emission could also be increased about 3.6 times in this system. The DC and UC emission properties, UC mechanism, as well as the enhancing mechanism have been investigated and discussed in detail. A selectively enhancing mechanism based on Yb 3+ -Mn 2+ dimer sensitizing is proposed to explain the selectively enhancing phenomena. This work could inspire the design of novel UC materials for various applications, such as temperature sensors and optical transmission, etc.
研究领域:
光学材料
·
生物医学光子学
·
无机功能材料
·
分子影像
·
转化医学
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Shihai Miao,Yanjie Liang,Ruiqi Shi,Weili Wang,Yongfu Li,Xiao-Jun Wang
Blue InGaN chip-pumped short-wave infrared (SWIR) emitters have aroused tremendous attention and shown emerging applications in diverse fields such as healthcare, retail, and agriculture. However, discovering blue light-emitting diode (LED)-pumped SWIR phosphors with a central emission wavelength over 1000 nm remains a significant challenge. Herein, we demonstrate the efficient broadband SWIR luminescence of Ni2+ by simultaneously incorporating Cr3+ and Ni2+ ions into the MgGa2O4 lattice, with Cr3+ as the sensitizer and Ni2+ as the emitter. Because of the strong blue light absorption of Cr3+ and high energy transfer efficiency to Ni2+, the obtained MgGa2O4:Cr3+, Ni2+ phosphors show intense SWIR luminescence with a peak wavelength at 1260 nm and a full width at half maximum (FWHM) of 222 nm under the excitation of blue light. The optimized SWIR phosphor presents an ultra-high SWIR photoluminescence quantum efficiency of 96.5% and outstanding luminescence thermal stability (67.9%@150 °C). A SWIR light source has been fabricated through a combination of the prepared MgGa2O4:Cr3+, Ni2+ phosphor and a commercial 450 nm blue LED chip, delivering a maximum SWIR radiant power of 14.9 mW at 150 mA input current. This work not only demonstrates the feasibility of developing broadband high-power SWIR emitters using converter technology but also presents new insights into the importance of SWIR technology.
研究领域:
材料科学
·
光电子学
·
固态照明
·
光子学
·
红外发射
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DOI
高影响因子
Journal of Materials Chemistry C
·
2014
·Vol. 2
·期 41
·8811-8816
·
IF 0
E. H. Song,J. L. Wang,D. C. Yu,S. Ye,Q. Y. Zhang
In contrast to common visible emission, an anomalous near-infrared (NIR) emission band at 790 nm has been demonstrated in the spinel structure MgGa2O4:Mn2+ with heavy Mn2+ doping. Tunable single-band visible to visible-NIR and single-band NIR emission are easily realised upon tuning the doping concentration of Mn2+. Careful investigation of the crystal structure, fluorescence lifetime and excitation & emission spectra indicates that the NIR emission might be ascribed to the 6A1(6S)4T1(4G) → 6A1(6S)6A1(6S) transitions of Mn2+–Mn2+ dimers. When some Yb3+ ions are codoped into the spinel MgGa2O4:Mn2+, room temperature visible upconversion (UC) emission is realised upon excitation with a 976 nm laser diode. The temperature-dependent UC emission properties as well as the related UC mechanism have been investigated. Understanding the nature of the Mn2+ Stokes and UC emissions is the key to developing advanced photonic devices with improved properties and manufacturability for engineering applications.
研究领域:
材料科学
·
光子学
·
光学材料
·
固态化学
·
发光光谱学
✓ 已验证
DOI
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