Applied Materials Today
·
2023
·
IF 8.3
Jianbin Mao,Qui Thanh Hoai Ta,Nguyen Ngoc Tri,Lanyan Shou,Soonmin Seo,Weiming Xu
A kind of MoTe 2 nanomesh material via nanocasting stratagem using KIT-6 silica as a hard template was synthesized. The advantage of the MoTe 2 nanomesh is the large specific area (75 m 2 /g), a few-layer structure (3 layers), and uniform pores (5–6 nm), which effectively improves both electrocatalytic and hydrogen evolution reaction (HER) performances. Specifically, the MoTe 2 nanomesh provided outstanding electrocatalytic activity with an overpotential of -300 mV for HER at -10 mA/cm 2 and a small Tafel slope of 62 mV/dec. Density functional theory (DFT) calculations were investigated to optimize stable configuration and possible reaction pathways. This research provides a new insight for improving the catalytic performance of 2D TMD catalysts in electrochemical reactions.
研究领域:
材料科学
·
电化学
·
催化
·
纳米技术
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产品关联
DOI
高影响因子
NANO LETTERS
·
2019
·
IF 12.279
Yufei Sun,Jinbo Pan,Zetao Zhang,Kenan Zhang,Jing Liang,Weijun Wang,Zhiquan Yuan,Yukun Hao,Bolun Wang,Jingwei Wang,Yang Wu,Jingying Zheng,Liying Jiao,Shuyun Zhou,Kaihui Liu,Chun Cheng,Wenhui Duan,Yong Xu,Qimin Yan,Kai Liu
Biaxial deformation of suspended membranes widely exists and is used in nanoindentation to probe elastic properties of structurally isotropic two-dimensional (2D) materials. However, the elastic properties and, in particular, the fracture behaviors of anisotropic 2D materials remain largely unclarified in the case of biaxial deformation. MoTe2 is a polymorphic 2D material with both isotropic (2H) and anisotropic (1T′ and Td) phases and, therefore, an ideal system of single-stoichiometric materials with which to study these critical issues. Here, we report the elastic properties and fracture behaviors of biaxially deformed, polymorphic MoTe2 by combining temperature-variant nanoindentation and first-principles calculations. It is found that due to similar atomic bonding, the effective moduli of the three phases deviate by less than 15%. However, the breaking strengths of distorted 1T′ and Td phases are only half the value of 2H phase due to their uneven distribution of bonding strengths. Fractures of both isotropic 2H and anisotropic 1T′ phases obey the theorem of minimum energy, forming triangular and linear fracture patterns, respectively, along the orientations parallel to Mo–Mo zigzag chains. Our findings not only provide a reference database for the elastic behaviors of versatile MoTe2 phases but also illuminate a general strategy for the mechanical investigation of any isotropic and anisotropic 2D materials.
研究领域:
材料科学
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纳米力学
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二维材料
·
计算材料物理
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DOI
高影响因子
Nanomaterials
·
2022
·Vol. 12
·期 23
·4133
·
IF 5.719
Tao Xu,Aolin Li,Shanshan Wang,Yinlong Tan,Xiang’ai Cheng
Two-dimensional (2D) molybdenum telluride (MoTe2) is attracting increasing attention for its potential applications in electronic, optoelectronic, photonic and catalytic fields, owing to the unique band structures of both stable 2H phase and 1T′ phase. However, the direct growth of high-quality atomically thin MoTe2with the controllable proportion of 2H and 1T′ phase seems hard due to easy phase transformation since the potential barrier between the two phases is extremely small. Herein, we report a strategy of the phase-controllable chemical vapor deposition (CVD) synthesis for few-layer (<3 layer) MoTe2. Besides, a new understanding of the phase-controllable growth mechanism is presented based on a combination of experimental results and DFT calculations. The lattice distortion caused by Te vacancies or structural strain might make 1T′-MoTe2more stable. The conditions for 2H to 1T′ phase conversion are determined to be the following: Te monovacancies exceeding 4% or Te divacancies exceeding 8%, or lattice strain beyond 6%. In contrast, sufficient Te supply and appropriate tellurization velocity are essential to obtaining the prevailing 2H-MoTe2. Our work provides a novel perspective on the preparation of 2D transition metal chalcogenides (TMDs) with the controllable proportion of 2H and 1T′ phase and paves the way to their subsequent potential application of these hybrid phases.
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DOI
高影响因子
Small Structures
·
2022
·Vol. 3
·期 9
·2200025
·
IF 11.343
Tao Xu,Shouheng Li,Aolin Li,Yue Yu,Hui Zhang,Ping Hu,Wenzhe Zhou,Liping Sheng,Tian Jiang,Haifeng Cheng,Xiang'ai Cheng,Fangping Ouyang,Jin Zhang,Shanshan Wang
Alloying is widely applied to tailor properties of 2D materials. Herein, a space-confined chemical vapor deposition (CVD) strategy to homogeneously grow 100 μm-sized monolayer 1T’-MoTe 2 in batches is developed. Aberration-corrected annular dark-field scanning transmission electron microscopy combined with density functional theory calculations is applied to investigate the atomic structural alteration of 1T’-MoTe 2 alloyed with sulfur. 1T’-to-2H phase transition is observed, triggered by both thermodynamic (stability improvement) and kinetic (phase transition barrier reduction) reasons. The alloying degrees of MoS 2 x Te 2(1− x ) grown at different temperatures display homophilic and random configurations, respectively, providing a feasible approach to tailor the atomic mixture of the alloying elements. The intralayer reconstruction and the interlayer displacement take place as defect concentration increases at elevated alloying temperatures. In contrast, 1T’-MoTe 2 displays high susceptibility in the presence of oxygen. An encapsulation method is developed using CVD-grown monolayer MoS 2 , extending the lifetime of monolayer tellurides from several minutes to at least 24 h. These results gain fundamental insights into the structural change in both the beneficial (sulfurization) and detrimental (oxidation) alloying processes of atomically thin 1T’-MoTe 2 and provide a new degree of freedom for the controllable growth of 2D alloys (i.e., tailoring the alloying degree).
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DOI
高影响因子
Advanced Electronic Materials
·
2019
·Vol. 5
·期 10
·1900552
·
IF 6.312
Li Yang,Hao Wu,Wenfeng Zhang,Xun Lou,Zijian Xie,Xu Yu,Yuan Liu,Haixin Chang
Room temperature ferromagnetic semiconductors remain one of the most puzzling issues to be solved in tens of years. Nowadays, 2D ferromagnetic transition metal dichalcogenides (TMDCs) nanosheets attract continuous interest due to their exceptional electronic structure and properties. Here, it is identified that semiconducting 2H-phase MoTe 2 few/mono-layer mixed nanosheets present a room temperature ferromagnetic property with Curie temperature above 400 K, although the MoTe 2 bulk counterpart shows diamagnetic properties. The origin of such observed room temperature ferromagnetism is attributed to the combination of their structural defects including Te vacancies, disorders, and amorphous imperfections and edge-states caused by reduced dimensionality. Moreover, a distinct enhancement of ferromagnetic properties at room temperature is revealed by a non-magnetic Ta doping strategy. Such structural defects and edge-states modulated ferromagnetism offers a feasible strategy to search for more robust room temperature ferromagnetic TMDCs nanosheets, which is essential to explore novel electronic and spintronic devices where both carrier charge and spin freedom can be controlled.
研究领域:
凝聚态物理
·
材料科学
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纳米科技
·
自旋电子学
·
半导体物理
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DOI
高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
·
2025
·
IF 7.7
Baoyu Huang,Shupeng Sun,Xi Li,Xinlei Li,Nan Wang,Xiaogan Li
The morphology of layer stacked MoTe 2 was adjusted by the liquid phase exfoliated method, and the MoTe 2 /ZnO heterojunctions were further prepared to enhance the gas sensing performance of MoTe 2 -based sensor to triethylamine (TEA) gas. The MoTe 2 /ZnO heterojunction sensor displayed a high response of 91.9% to 10 ppm TEA at room temperature, which is approximately 3.53 times that of the pure MoTe 2 sensor (26.02%). The construction of the MoTe 2 /ZnO heterojunction also enhanced the selectivity and the recovery rate of TEA gas. The sensor mechanism of TEA gas was analyzed by using AC impedance spectroscopy, in-situ diffuse reflectance infrared Fourier transformations spectroscopy (DRIFTS), and density functional theory (DFT). It was found that the improvement of gas sensing performance was mainly due to the formation of a heterojunction structure, which increased the adsorption energy and charge transfer between TEA gas and the sensing material.
研究领域:
材料科学
·
化学
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产品关联
DOI
高影响因子
Advanced Electronic Materials
·
2020
·Vol. 6
·期 10
·2000532
·
IF 6.593
Yuxuan Ke,Xuefen Song,Dianyu Qi,Jidong Liu,Qiaoyan Hao,Zhuo Wang,Sisi Tang,Wenjing Zhang
It has been found that substitutional atoms, surface modification, electrostatic gating, and contact electrode engineering can induce doping effects in 2D materials. However, the doping level, area, position, and pattern shape are not well controlled; thus, it is hard to generate high-performance, multifunctional devices and logic circuits with these doping approaches. Here, it is found that a damage-free, highly controllable, local doping in multilayer molybdenum ditelluride (MoTe 2 ) flakes can be realized with highly controllable laser beam scanning irradiation. The doping level, area, position, and pattern shape are well controlled by adjusting parameters of the scanning laser beam. With the controllable doping, the subthreshold swing of MoTe 2 -based transistors can be decreased by one order of magnitude, well-matched p-type and n-type transports can be formed, and threshold voltages can be modulated, then a complementary inverter with ultra-high gain ≈242 is realized, which is the highest in all reported inverters based on 2D materials. It is also found that a stable negative transconductance behavior can be created for the MoTe 2 transistor by controlling doping position, then a frequency doubler is successfully demonstrated. Therefore, it is proposed that the position-controlled local doping in multilayer MoTe 2 may offer exciting application potentials in future nanoelectronics.
研究领域:
纳米电子学
·
材料科学
·
半导体器件
·
光电子学
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DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2026
·
IF 19.9
Mingyan Qin,Junpeng Zhu,Yuting Zou,Mingxiu Liu,Chunlu Chang,Huaiyu Xiang,Yaru Shi,Weijia Wang,Xilang Shen,Shaojuan Li
Spectral information, reflecting the interaction between light and matter across different wavelengths, is essential for identifying material properties and environmental changes. To meet the demand for compact spectral sensors, we constructed a type-I band-aligned MoTe 2 /Te van der Waals (vdW) heterostructure through precise band structure design, where the drain–source voltage ( V ds ) electrostatically tunes interfacial band alignment to complement gate voltage ( V gs ) modulation. By synergistically tuning the V gs and V ds , we achieved a wavelength-dependent photoresponse and constructed a spectral responsivity matrix. Integrated with an attention-guided multilayer perceptron (MLP) algorithm that incorporates the device's responsivity as prior physical information, the device functions as a miniaturized spectrometer, demonstrating narrowband spectral reconstruction with an optimal resolution of 6 nm across a broadband range from 500 to 780 nm at room temperature. The noncentrosymmetric crystal structure of Te also endows the device with the capability of simultaneous polarization discrimination. This work provides a promising approach toward multifunctional on-chip spectrometers capable of simultaneous spectral and polarization analysis.
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产品关联
DOI
高影响因子
Small
·
2022
·Vol. 18
·期 20
·2107650
·
IF 15.153
Yin Xia,Lingyi Zong,Yu Pan,Xinyu Chen,Lihui Zhou,Yiwen Song,Ling Tong,Xiaojiao Guo,Jingyi Ma,Saifei Gou,Zihan Xu,Sheng Dai,David Wei Zhang,Peng Zhou,Yu Ye,Wenzhong Bao
Two-dimentional semiconductors have shown potential applications in multi-bridge channel field-effect transistors (MBC-FETs) and complementary field-effect transistors (C-FETs) due to their atomic thickness, stackability, and excellent electrical properties. However, the exploration of MBC-FET and C-FET based on large-scale 2D semiconductors is still lacking. Here, based on a reliable vertical stacking of wafer-scale 2D semiconductors, large-scale MBC-FETs and C-FETs using n-type MoS 2 and p-type MoTe 2 are successfully fabricated. The drive current of an MBC-FET with two layers of MoS 2 channel (20 µm/10 µm) is up to 60 µA under 1 V bias. Compared with the single-gate MoS 2 FET, the carrier mobility of MBC-FET is 2.3 times higher and the sub-threshold swing is 70% smaller. Furthermore, NAND and NOR logic circuits are also constructed based on two vertically stacked MoS 2 channels. Then, C-FET arrays are fabricated by 3D integrating n-type MoS 2 FET and p-type MoTe 2 FET, which exhibit a voltage gain of 7 V/V when V DD = 4 V. In addition, this C-FET device can directly convert light signals to an electrical digital signal within a single device. The demonstration of MBC-FET and C-FET based on large-scale 2D semiconductors will promote the application of 2D semiconductors in next-generation circuits.
研究领域:
电子器件
·
材料科学
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DOI
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 7
·期 34
·10598-10604
·
IF 6.641
Xukun Zhu,Aolin Li,Di Wu,Peng Zhu,Haiyan Xiang,Song Liu,Jian Sun,Fangping Ouyang,Yu Zhou,Xiang Xiong
Crystal phase-engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) shows remarkable potential for various electronic, optoelectronic and catalytic applications. Here, a few-layer 1T′–2H MoTe2 lateral homo-junction has been obtained by using a facile chemical vapor deposition (CVD) method. In this CVD growth process, the in-plane phase evolution of the MoTe2 film can be dynamically controlled via tuning the contact between the film and Te vapor. Moreover, a local large-scale reversible phase transition of MoTe2 film through heat treatment in a hydrogen atmosphere is reported. During this heat treatment, two types of phase transition from 1T′ to 2H are observed at 500 °C and 750 °C respectively. The mechanism of this reversible phase transition is analysed by first principles calculations. The fabricated 1T′–2H–1T′ homojunction devices demonstrate that the hole mobility of 2H-MoTe2 is comparable with the exfoliated samples. This work in dynamic phase control of MoTe2 provides a pathway to exploring structural transformation of 2D materials and manufacturing novel phase-change electronic devices.
研究领域:
材料科学
·
物理化学
·
电子工程
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DOI
高影响因子
Laser & Photonics Reviews
·
2026
·
IF 9.7
Shiwei Zhang,Jianxian He,Haozhe Li,Zirou Luo,Baojun Pan,Kaiwen Gong,Shaochang Liang,Yao Yao,Aoran Geng,Yixun Liang,Haoran Mu,Guolin Hao,Guangyu Zhang,Shenghuang Lin
Van der Waals materials and their heterostructures offer strong gate tunability, enabling multilevel and polarity-switchable photoresponse states in programmable photodetectors for in-sensor encoding and computing. However, current gate-programmable photodetectors often rely on trap-mediated mechanisms, where charge capture and release can lead to nonlinear weight modulation and slow transient response. Achieving linear modulation of photoresponse weights while maintaining fast photoresponse therefore remains challenging. Here, we present a Te/MoTe 2 reconfigurable photodetector governed by gate-modulated interfacial built-in fields. Under zero drain bias, the short-circuit photocurrent can be continuously tuned from negative to positive values, giving rise to linear bipolar responsivity modulation with a coefficient of determination (R 2 ) of 0.99 over the V gs range from −44 to −14 V, which contains 31 experimentally distinguishable bipolar photoresponse states. A fast transient response of 3 µs is maintained during gate-programmed polarity switching. The 3 × 3 device array further demonstrates pixel-to-pixel reproducibility in responsivity modulation and response speed, supporting convolutional-kernel-based image processing and event-driven motion recognition. This work provides a built-in-field-dominated gate-programming strategy for low-power, fast, and linearly reconfigurable optoelectronic devices for in-sensor computing.
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DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2018
·Vol. 28
·期 31
·1801139
·
IF 13.325
Ning Ma,Ming-Kang Zhang,Xiao-Shuang Wang,Lu Zhang,Jun Feng,Xian-Zheng Zhang
Telluride molybdenum (MoTe 2 ) nanosheets with wide near-infrared (NIR) absorbance are functionalized with polyethylene glycol-cyclic arginine-glycine-aspartic acid tripeptide (PEG-cRGD). After loading a chemotherapeutic drug (doxorubicin, DOX), MoTe 2 -PEG-cRGD/DOX is used for combined photothermal therapy and chemotherapy. With the high photothermal conversion efficiency, MoTe 2 -PEG-cRGD/DOX exhibits favorable cells killing ability under NIR irradiation. Owing to the cRGD-mediated specific tumor targeting, MoTe 2 -PEG-cRGD/DOX shows efficient accumulation in tumors to induce a strong tumor ablation effect. MoTe 2 -PEG-cRGD nanosheets, which are relatively stable in the circulation, could be degraded under NIR ray. The in vitro and in vivo experimental results demonstrate that this theranostic nanoagent, which could accumulate in tumors to allow photothermal imaging and combined therapy, is readily degradable in normal organs to enable rapid excretion and avoid long-term retention/toxicity, holding great potential to treat tumor effectively.
研究领域:
癌症治疗
·
材料科学
·
生物医学工程
·
纳米医学
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DOI
高影响因子
危险品化学品经营许可证（带存储）