ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Xiaoqi Peng,Zhentao Ma,Zixu He,Rongfeng Tang,Jianyu Li,Shuwei Sheng,Ting Wu,Yue Hu,Zhiyuan Cai,Zequan Jiang,Yuchen Li,Changfei Zhu,Ruiguo Cao,Xusheng Zheng,Tao Chen
For solar cells, interfacial chemical coordination, carrier transport, and energy alignment play critical roles in carrier transport and determine the final energy conversion efficiency. As an emerging solar technology, high-efficiency Sb 2 (S,Se) 3 solar cells typically utilize cadmium sulfide (CdS) as the interfacial electron transport layer. However, the poor chemical and electrical contact between F-doped SnO 2 (FTO) substrate and CdS presents a significant challenge to improving device performance. Here, an ultrathin SnO 2 layer is introduced, fabricated via chemical bath deposition, between FTO and CdS to address the interfacial coordination and transport problem. The non-invasive depth analysis based on synchrotron radiation X-ray photoelectron spectroscopy shows that this interfacial engineering approach facilitates the formation of S-Sn bonding at the FTO/CdS interface, which cannot be achieved on the conventional inert FTO surface. Additionally, the existence of an interfacial SnO 2 layer reduces the sulfur vacancy defect (V S ) in the CdS films, enhancing both electrical conductivity and crystallinity. Therefore, the solar cell demonstrates significantly enhanced carrier separation and transport performance. Ultimately, the Sb 2 (S,Se) 3 solar cells achieve a record fill factor exceeding 73%, with a championefficiency of 10.58%. This study presents an effective interfacial engineering strategy to enhance charge transport properties for high-performance Sb 2 (S,Se) 3 solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2023
·
IF 6.4
Li-Mei Lin,Feng-Ying Wu,Zhi-Ping Huang,Li-Quan Yao,Hu Li,Ren-Yuan Liao,Ai-Cheng Chen,Jian-Min Li,Gui-Lin Chen
The reported high efficiency antimony chalcogenides devices are chronically adopted with organic hole transport layers (HTLs, i.e., Spiro-OMeTAD) because of their superior hole mobility and adequate energetic alignment. However, the high moisture sensitivity and high cost of organic HTLs will hinder their large scale application. Herein, a low-cost and stable carbon electrode is used as the back contact material for wide bandgap Sb2(S,Se)3 solar cells, and an eco-friendly MoS2 nanofilm with a suitable band structure and excellent carrier mobility is then employed to regulate the interface of Sb2(S,Se)3/carbon in terms of energy level alignment and carrier transportation. The thermal evaporated MoS2 effectively alleviates the serious recombination and remarkably improves the photoelectric conversion efficiency of wide bandgap Sb2(S,Se)3 thin-film solar cells by 50%, finally achieving an impressive efficiency of 6.1% with VOC of 0.76 V, JSC of 13.5 mA/cm2, and FF of 59%, which is among the highest efficiencies of carbon-based Sb2(S,Se)3 solar cells.
研究领域:
光伏技术
·
材料科学
·
纳米技术
·
可再生能源
·
薄膜太阳能电池
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2026
·
IF 3.9
Fang Junfei,Liu Lei,Yang Hang,Sun Yulong,Feng Rui,Li Liang,Deng Jianping,Gou Yuchun
Graphitic carbon nitride (g-C 3 N 4 ) is a material with a graphite-like layered structure. Due to its non-toxic and harmless nature, stable performance, and visible light response capability, g-C 3 N 4 holds significant application prospects in the field of photocatalysis. In this study, the Sb 2 (S,Se) 3 was coupled with g-C 3 N 4 to construct a heterojunction structure, and the photocatalytic degradation performance of the g-C 3 N 4 /Sb 2 (S,Se) 3 heterojunction materials on organic dye pollutants was investigated. Firstly, the g-C 3 N 4 /Sb 2 S 3 composite samples were prepared using a hydrothermal reaction. Subsequently, the g-C 3 N 4 /Sb 2 (S,Se) 3 heterojunction structures were constructed through selenization, and then they were used in the efficient photocatalytic degradation process of organic pollutants methylene blue (MB) and rhodamine B (RhB). The results indicate that due to the formation of the heterojunction structure, the light absorption performance of the g-C 3 N 4 /Sb 2 S 3 and g-C 3 N 4 /Sb 2 (S,Se) 3 composite materials is significantly strengthened, and the separation ability of the photo-generated carriers is remarkably improved. Therefore, compared with pure g-C 3 N 4 , the photocatalytic degradation activity of the composite system on MB and RhB is outstandingly enhanced. Furthermore, after partially replacing S with Se through selenization, the resulting heterojunction structure exhibits stronger photocatalytic degradation performance. For example, the 4-GSe sample obtained at a selenization temperature of 140 °C can achieve a degradation rate of 96% for MB within 60 min and a degradation rate of 95% for RhB within 90 min. Moreover, the prepared heterojunction structure can still maintain excellent photocatalytic degradation activity even in complex dye wastewater. This study offers innovative insights for the development of high-performance photocatalysts capable of efficiently degrading complex organic dye wastewater.
✓ 已验证
产品关联
DOI
高影响因子
Science China-Materials
·
2023
·Vol. 66
·期 9
·3415-3423
·
IF 8.1
Gao Jinxiang,Che Bo,Cai Huiling,Xiao Peng,Zhang Lijian,Cai Zhiyuan,Zhu Changfei,Tang Rongfeng,Chen Tao
Antimony selenosulfide (Sb 2 (S,Se) 3 ) is a promising photovoltaic material because of its high chemical stability, optimal optoelectronic properties, and low-cost advantages. However, finding suitable material processing approaches to obtain elemental controlled Sb 2 (S,Se) 3 films with suppressed deep-level defects poses fundamental demands and challenges to developing this emerging solar technology. Here, we developed a robust method for tailoring the composition of the film through controlling the anion elements. The films were prepared by evaporating the presintered Sb 2 (S,Se) 3 alloy compound via a single-source thermal evaporation process. A quasi-precise estimate of single-phase Sb 2 (S,Se) 3 films was made by sintering Sb, S, and Se elemental precursors and adjusting the anion molar ratio in the prefabricated Sb 2 (S,Se) 3 alloy compound, and the elemental ratio of the precursor alloy compound was maintained in the as-obtained Sb 2 (S,Se) 3 films. A highly efficient Sb 2 (S,Se) 3 solar cell with a power conversion efficiency of 8.25% was achieved by introducing low-cost CuPc-doped P3HT as a hole-transporting layer. Here, we demonstrate the dependence of deep-level defects and oriented crystal growth on the S/Se atomic ratios and show how tunability can be used to improve carrier transport for photovoltaic energy conversion. Our study presents a novel approach to fabricating metal chalcogenide semiconducting films and improving the performance of Sb 2 (S,Se) 3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Hui Li,Rui Da,Li-Quan Yao,Hu Li,Peng Tang,Jin-Rui Cai,Li-Mei Lin,Shui-Yuan Chen,Dong Wei,Li-Ping Cai,Gui-Lin Chen
Sulfoselenide Sb 2 (S,Se) 3 , as a potential light-harvester, possesses a flexibly tunable bandgap of 1.1–1.7 eV to match solar radiation spectrum. However, the preparation of a homogenous Sb 2 (S,Se) 3 film is still challenging due to the different growth kinetics in sulfide and selenide compound, which consequentially leads to phase separation, lattice disorder and unfavored band level. This dilemma also occurs in the simple and well-established close space sublimation (CSS) method, and poses a devastating carrier recombination in Sb 2 (S,Se) 3 solar cells. Herein, alloyed powders of Sb 2 (S,Se) 3 are exquisitely synthesized by a thorough gas-solid reaction, delivering a uniform and single phase composition distribution as well as finely-tunable S/Se ratio. Compared with a physically mixed powder source (Sb 2 S 3 /Sb 2 Se 3 ), this alloyed Sb 2 (S,Se) 3 source allows for the fabrication of a homogeneous Sb 2 (S,Se) 3 thin film by CSS, rendering improved ( hk1 ) orientation, dense morphology, a more consistent longitudinal S/Se ratio, and enhanced energy level arrangement. These advancements contribute to enhance carrier transport and reduce carrier recombination. As a result, the efficiency of the solar cell is remarkably boosted from 2.59% to 5.46%, which is among of the highest PCE of full-inorganic Sb 2 (S,Se) 3 devices fabricated through the CSS method.
研究领域:
材料科学
·
能源技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2025
·
IF 6.3
Mengzhu Li,Yanqing Wang,Zhiping Fang,Dongchen Guo,Min Fan,Hui Dai,Fuling Guo,Wangchao Chen,Chengwu Shi,Peng Cui
Antimony selenosulfide (Sb 2 (S,Se) 3 ) demonstrates strong potential for thin-film solar cells owing to its tunable bandgap, low toxicity, and high stability. However, conventional fabrication methods often yield films with small grain sizes and random orientations, which hinder device performance. Herein, an in situ polymerization-assisted grain growth (iPAGG) strategy was developed, specifically enabling the oriented growth of Sb 2 (S,Se) 3 on Cd-free TiO 2 substrates, by introducing acrylic acid (AA) into the chemical bath deposition process. The carboxylate groups from AA coordinate with Sb 3+ ions, promoting oriented growth of Sb 2 (S,Se) 3 film. This approach yields films with enlarged grains, reduced defect densities, and strengthened [ hk 1] preferred orientation. As a result, Cd-free Sb 2 (S,Se) 3 solar cells employing the optimized AA concentration yielded a champion power conversion efficiency (PCE) of 7.24%, outperforming the control device (6.70%). Further interfacial modification with poly (acrylic acid)-modified SnO 2 boosts the PCE to 7.55%. This work offers an effective way toward the fabrication of high-performance and environmentally friendly Sb 2 (S,Se) 3 photovoltaics.
研究领域:
材料科学
·
光伏技术
·
纳米结构制备
·
表面化学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2024
·
IF 6.3
Yanqing Wang,Mengzhu Li,Dongchen Guo,Min Fan,Jingjun Zhang,Juan Guo,Hongzhan Dong,Chengwu Shi
Antimony selenosulfide (Sb 2 (S,Se) 3 ) solar cells hold significant promise for sustainable photovoltaic technology due to their adjustable band gap, high absorption coefficient and good stability. In terms of device operation, the transfer of electrons from the Sb 2 (S,Se) 3 layer to the electron transport layer (ETL) plays a crucial role in improving the photovoltaic performance of solar cells. Until now, high-efficiency Sb 2 (S,Se) 3 solar cells have typically employed cadmium sulfide (CdS) as the ETL. However, inadequate interface contact between the CdS and the Sb 2 (S,Se) 3 layer often results in severe interface recombination, and the parasitic light absorption of CdS restricts the short-circuit current density ( J sc ). Therefore, the development of high-quality CdS film along with reduction of cadmium element usage remains an import issue for the Sb 2 (S,Se) 3 solar cells. Herein, the poly(acrylic acid)-modified tin oxide (PAA-SnO 2 )/CdS double ETLs are introduced to improve the quality of both the CdS film and Sb 2 (S,Se) 3 film, while also strengthening the interface contact between CdS and Sb 2 (S,Se) 3 . The power conversion efficiency of the corresponding solar cells increases from 7.45% in the control device to 8.15% in the modified device. This work provides a simple PAA-modified SnO 2 -assisted CdS ETL strategy to improve the interface of CdS/Sb 2 (S,Se) 3 , thereby achieving efficient and stable Sb 2 (S,Se) 3 solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2021
·Vol. 32
·期 10
·2110335
·
IF 18.808
Hu Li,Limei Lin,Liquan Yao,Fengying Wu,Dong Wei,Guoliang Liu,Zhigao Huang,Shuiyuan Chen,Jianmin Li,Guilin Chen
MXene, a class of 2D materials of metal carbide or nitride, has attracted a lot of attention recently due to its excellent optical and electrical properties. In this work, titanium-carbide MXene (Ti 3 C 2 T x ) is introduced as a back electrode in Sb 2 (S,Se) 3 thin-film solar cells (FTO/CdS/Sb 2 (S,Se) 3 /MXene) for the first time, which displaces traditional carbon (C) and gold (Au) electrodes entirely. Impressively, thanks to its high conductivity, mild reflectivity, and flexible flake architecture, the MXene-based device performance outperforms typical C and Au electrodes by 153% and 77%, respectively. Specifically, the tunable work function of MXene and a beneficial Sb–O bond formed between Sb 2 (S,Se) 3 and MXene efficiently suppress the recombination and enhance charge transport by enjoying the unique merit of the rich terminal groups of MXene. As a result, the best efficiency of 8.29% of MXene-based Sb 2 (S,Se) 3 solar device is achieved, which represents the highest performance of noble metal and/or hole transport layer-free derived Sb 2 (S,Se) 3 solar cells to date. This result has revealed that MXene is a feasible material to substitute the back electrode in Sb-based solar cells to reach high efficiency, low cost, and high stability.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
JOURNAL OF SOLID STATE CHEMISTRY
·
2017
·
IF 2.299
Misganaw Alemu Zeleke,Dong-Hau Kuo,Osman Ahmed Zelekew,Albert Daniel Saragih
Ge-substituted Cu 2 Sn(S,Se) 3 bulks with Cu 2 (Sn 1- x Ge x )(S,Se) 3 formula at x = 0, 0.25, 0.50, 0.75, and 1.0 were synthesized by reactive liquid phase sintering , where the heating process was held at 200 °C for 20 min before reaching the sintering temperature of 600 °C for 30 min. In the presence of volatile Sb 2 S 3 sintering aid , the effects on densification , grain boundary, crystalline size, and electrical properties of Ge-substitution were investigated. Cu 2 (Sn 1- x Ge x )(S,Se) 3 showed p-type behavior for all x values. It was found that the mobility was increased sharply and carrier concentration was decreased rapidly as the x -value was increased. The electrical conductivities were found to be 14.0, 22.7, 36.8, 126, and 153 S/cm at x = 0, 0.25, 0.50, 0.75, and 1.0, respectively. X-ray diffraction (XRD) peaks were shifted to the higher angle and band gaps increased upon successive increasing of the Ge/[Ge+Sn] fraction being 1.19, 1.21, 1.22, 1.24, and 1.26 eV at x = 0, 0.25, 0.50, 0.75, and 1.0, respectively. The studies of Ge-x-CTSSe bulks were based on Ge Sn defects and supported by the data of morphological, structural, electrical, and optical properties .
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Hu Li,Hongbin Lin,Xiaohui Liao,Weiqin Huang,Jinrui Cai,Limei Lin,Dong Wei,Zhiping Huang,Zhigao Huang,Shuiyuan Chen,Wei Zhang,Guilin Chen
Cadmium sulfide (CdS) persists as the standard electron transport layer (ETL) in high-efficiency Sb 2 (S,Se) 3 solar cells. However, its narrow bandgap imposes critical performance limitations through parasitic short-wavelength absorption and interface mismatch. Here, this bottleneck is shattered through an innovative in situ ozone doping strategy. This approach revolutionizes CdS ETLs by simultaneously: 1) Widening the bandgap of CdS ETL to drastically suppress parasitic short-wavelength photon loss; 2) Triggering a hexagonal-to-cubic phase transition that disrupts coherent Sb 2 O 3 impurity growth during Sb 2 (S,Se) 3 deposition; and 3) Engineering an oxygen-rich, defect-resistant FTO/CdS interface (DFT-validated), thereby slashing recombination and enabling superior carrier extraction. As a result, a certified world-record power conversion efficiency of 9.0% for carbon-based Sb 2 (S,Se) 3 solar cell is achieved ( V OC of 0.4908 V, J SC of 26.88 mA cm −2 , and FF of 68.19%) using an FTO/CdS:O/Sb 2 (S,Se) 3 /PbS/carbon configuration. This work, beyond setting a new benchmark for carbon-based Sb 2 (S,Se) 3 solar cells, shows that these devices demonstrate exceptional intrinsic stability under long-term and extreme damp-heat conditions without encapsulation, thus propelling Sb 2 (S,Se) 3 technology toward commercial viability.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
界面工程
·
能源材料
·
纳米结构调控
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Mingrui Li,Qingqin Ge,Nannan Shi,Ting Wang,Cheng Sun,Yanping Song
Antimony selenosulfide (Sb 2 (S,Se) 3 ) thin films hold significant potential in the photovoltaic field due to their tunable bandgap, high absorption coefficient (>10 5 cm −1 ), earth-abundant, and low-toxicity constituents. However, serious trapped-carrier recombination at deep-defect levels limits their efficient applications. In this sense, it is urgently necessary to address the issues of the defects and enhancing film properties. This study optimizes solution-processed Sb 2 (S,Se) 3 films by adjusting the antimony/sulfur (Sb/S) atomic ratio in precursors and the post-selenization temperature. Results show that an optimal Sb/S atomic ratio of 2/3.55 in precursors improves the crystallinity, enlarges the grain size, and minimizes the antimony-oxygen (Sb-O) impurities; this suppresses the deep-trapped carriers’ non-radiative recombination, and reduces the defect density in the Sb 2 (S,Se) 3 films. Furthermore, it is found that the selenization at an optimal temperature of 350 °C further increases the grain size, broadens the light absorption, and diminishes the deep-level defects, which is clearly revealed by the transient absorption experiments. This dual-parameter optimization strategy may promote the development of the high-performance Sb 2 (S,Se) 3 films towards high-efficiency photovoltaic applications.
研究领域:
材料科学
·
光伏技术
·
薄膜技术
·
半导体缺陷工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Jingjing Liu,Mengsha Cao,Zhengdong Feng,Xiaomeng Ni,Jing Zhang,Jianhua Qiu,Shuai Zhang,Huafei Guo,Ningyi Yuan,Jianning Ding
Chemical bath–deposited cadmium sulfide (CBD-CdS) is the most widely used buffer layer material for antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic devices , but its medium band gap, large band gap offset with transparent conducting oxides , and surface defects must be addressed to improve its applicability. Hexagonal CdS films (60 nm thick) prepared using the thermal evaporation method were used as the buffer layers of Sb 2 (S,Se) 3 photovoltaic devices. Compared with CBD-CdS (60 nm thick), thermal evaporation–deposited CdS (TED-CdS) films have a larger band gap and fewer surface defects. The Sb 2 (S,Se) 3 film deposited on TED-CdS is more compact, and its 1D ribbons are stacked more vertically to the substrate. The band gap offset between CdS and fluorine-doped tin oxide glass decreases from 0.76 eV (CBD-CdS) to 0.60 eV (TED-CdS). Therefore, suppressed electron trap density and charge recombination, as well as improved light harvesting, are achieved. By replacing CBD-CdS with TED-CdS, the best device efficiency increases from 6.14 % to 7.16 %, with the open circuit voltage, short-circuit current density, and fill factor increasing from 0.660 V, 15.96 mA/cm 2 , and 58.37 % to 0.664 V, 17.39 mA/cm 2 , and 62.85 %, respectively. The device stability and reproducibility are also improved.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）