The rare-earth ion doping in nanocrystals has the advantage on improving the interested properties. As one of rare-earths, the trivalent samarium ion (Sm 3 + ) was used as a dopant. The precursor of Sm 3 + -doped cadmium ferrite (CdFe 2 O 4 ) nanocrystals was reacted in water-soluble polymeric nanoreactors as a dispersed phase in miniemulsion, and then calcinated to form doped nanocrystals. The 1% Sm 3 + -doped nanocrystal in small size exhibited the smaller narrow gap energy and weak photoluminescent emission intensity; which attributed to the positive influences on the photocatalytic degradation. The selected Sm 3 + -doped spinel ferrite nanocrystals provide a unique catalyzer for organic compound photodegradation.
A novel Sm3+-doped Sr2CaWO6 (SCWO) red phosphor, synthesized though a solid-state reaction, was reported. Its crystal structure was analyzed and refined via the Rietveld full-pattern fitting method based on XRD patterns. The CASTEP module of Materials Studio was used to investigate the band structure and density of states of the SCWO. The optical band gap was calculated through the UV-vis diffuse reflectance spectrum and compared with the value predicted by the DFT method. Raman spectra were recorded to confirm the substitution of cations by Sm3+ ions. The broad W–O charge transfer band and narrow excitation band at 406 nm from Sm3+ ions have comparable intensities in SCWO:Sm3+. After the introduction of charge compensators Li+, Na+ or K+, the intensity of the near-UV excitation band at 406 nm was almost twice as much as before. The profiles of the emission spectra under excitation into the charge transfer absorption and f–f transition of Sm3+ are different, and low-symmetry Sm3+ centres are preferentially excited via f–f absorption transitions. The intensity ratios of electronic, magnetic dipole-allowed transitions under different radiations show that the charge compensators can influence the chemical environment around Sm3+.
Passive electronic components made from dielectric ceramics can hardly operate at extremely high temperatures, which is attributed to the sharply increasing dielectric loss and leakage conductance. In this work, the widely applicated CaTiO 3 ceramics are used as the matrix, and the high-temperature electrical properties are modified by doping Sm 3+ and Al 3+ . The Sm-doping in CaTiO 3 ceramics can significantly suppress the dielectric relaxation at low frequencies and reduce the high-temperature leakage conductance. Continued doping of Al in Ca 0.6 Sm 0.27 TiO 3 ceramics can further reduce the high-temperature dielectric loss and conductivity. These changes are associated with tighter crystal structures and fewer defects in the ceramics. With Sm and Al doping, the high-temperature dc conductivity of the ceramics is reduced by about 4 orders of magnitude, and a dielectric loss of less than 0.02 and a low temperature cofficient of capacitance (TCC) of − 25 ppm/℃ are obtained over a wide temperature range of room temperature to 530 ℃. Outstanding temperature stabilities are exhibited over a temperature range of 25 ∼ 200 ℃ in energy storage performance and charge-discharge property. Extremely fast discharge speed ( t 0.9 = 16 ns) makes it suitable for pulsed power electronic systems. Such linear dielectric materials are expected to be used in harsh environment of high temperatures.
危险品化学品经营许可证（带存储）