INORGANIC CHEMISTRY
·
2018
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IF 4.7
Xiaofang Li,Chen Chen,Wenhua Xue,Shan Li,Feng Cao,Yuexing Chen,Jiaqing He,Jiehe Sui,Xingjun Liu,Yumei Wang,Qian Zhang
An n-type Bi-doped SnSe was synthesized by a facile solution method followed by spark plasma sintering. We used bismuth(III) 2-ethyhexanoate as a cationic dopant precursor, which can absorb on the powder surface and then diffuse into the lattice to realize the substitution of Sn by Bi. A strip structure with low-angle boundary was constructed for effective phonon scattering. With increasing content of Bi, the carrier concentration decreased from 1.35 × 1019 cm–3 (p-type) in undoped SnSe to 4.7 × 1014 cm–3 (n-type) in Sn0.99Bi0.01Se and then increased to 1.3 × 1015 cm–3 (n-type) in Sn0.97Bi0.03Se. The Seebeck coefficient changed from positive to negative and presented n-type conducting behavior in the whole measured temperature range from 300 to 773 K, reaching a maximum absolute value of ∼900 μV K–1 at room temperature and ∼300 μV K–1 at 773 K. Considering the rich variety of metal 2-ethylhexanoates, higher thermoelectric performance is expected by different cationic doping in solution-synthesized nanomaterials.
研究领域:
材料科学
·
热电能源
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF APPLIED PHYSICS
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2019
·Vol. 125
·期 22
·
IF 2.328
Zhang Q. K.,Ning S. T.,Qi N.,Chen Z. Q.,Tang X. F.,Chen Z. Y.
In this study, polycrystalline SnSe was synthesized via a rapid, cost-effective, and large-scale synthesis route. The obtained SnSe powders were pressed into pellets via spark plasma sintering (SPS) at different temperatures. Powder X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were used to characterize the crystal structures and morphology of the SnSe samples. The XRD results indicate that the orientation factors increase monotonously with the increase of sintering temperature. The FESEM images show that sintering temperatures have no obvious influence on the particle size. Positron annihilation measurements indicate that vacancy defects exist in all the sintered SnSe samples, and they recover gradually with increasing sintering temperatures. These vacancy defects are responsible for the lower lattice thermal conductivity in samples sintered at lower temperatures. The electrical conductivity, power factor, thermal conductivity, and figure of merit ZT show nearly the same variation trend, which increases initially with the increasing sintering temperature up to 550 ° C then decreases with further increase of the sintering temperature, which is possibly due to slight oxidation of SnSe. A maximum ZT value of ∼ 0.47 at 430 ° C was achieved for the 550 ° C sintered sample, which is higher than those reported for undoped polycrystalline SnSe around this temperature. Thus, we provide a simple, energy-saving, and effective method to synthesize polycrystalline SnSe in large quantities, and SPS is an effective method to optimize thermoelectric performance.
研究领域:
材料科学
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能源材料
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物理化学
✓ 已验证
DOI
高影响因子
JOURNAL OF NANOPARTICLE RESEARCH
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2022
·Vol. 24
·期 6
·1-10
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IF 2.533
Xu Hui-Hong,Zhou Ning-Ning,Liang Xiao-Long,Jiang Tian-Tian,He Wen-Tao,Song Ji-Ming
Tin selenide (SnSe) with an orthorhombic system has recently become a hot spot in the thermoelectric field owing to its low thermal conductivity and high melting point. In this work, P-type SnSe nanoparticles with a mean diameter ca.20–25 nm have been synthesized first by a facile liquid-phase method. Interestingly, the synthesized SnSe nanoparticles have transformed from an intrinsic P-type to an N-type semiconductor after being annealed due to the generation of SnSe 2 secondary phase. The SnSe samples have been characterized by XRD, SEM, XPS, TEM, laser flash, and BET, and the results show that the nanostructure and the presence of SnSe 2 secondary phase enhance phonon scattering effect leading to freshly formed N-type SnSe that has an ultra-low lattice thermal conductivity and a low total thermal conductivity (0.368 Wm −1 K −1 , 0.393 Wm −1 K −1 ) at 723 K. Obviously, this work provides a new way to obtain an N-type SnSe nanomaterial with ultra-low lattice thermal conductivity. Graphical abstract The nano-scale P-type SnSe semiconductor material has been synthesized by a liquid phase method, then has been transformed into an N-type semiconductor after being annealed. The obtained N-type SnSe nanopaticles had an ultra-low lattice thermal conductivity with good stability and repeatability, 0.368 Wm −1 K −1 at 723 K.
研究领域:
材料科学
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热电材料研究
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
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2022
·
IF 10.319
Xiaofang Liu,Hengyang Wang,Bin Zhang,Sikang Zheng,Yao Chen,Hong Zhang,Xianhua Chen,Guoyu Wang,Xiaoyuan Zhou,Guang Han
SnSe, possessing strong lattice anharmonicity and structural anisotropy, has attracted massive attention in thermoelectric conversion. Herein, we demonstrate that simultaneously optimized electrical and thermal transport properties are achieved in SnS 2 -alloyed SnSe polycrystalline materials , which were fabricated via sintering the mixture of solution-synthesized SnSe microplates and SnS 2 nanoplates. Resulting from the increased carrier concentration, p-type (SnSe) 1– x (SnS 2 ) x ( x = 0.5%, 1%) samples obtain much-improved power factor between 300 K and 373 K, e.g. 0.72 mW m –1 K –2 at 300 K for (SnSe) 0.99 (SnS 2 ) 0.01 , which is enhanced by 53% compared to that of SnSe. Additionally, the existing point defects and planar defects effectively strengthen phonon scattering, thus reducing the lattice thermal conductivity , for example, 0.47 W m –1 K –1 at 773 K for the x = 0.02 sample. Eventually, a maximum zT of 0.80 at 823 K and an average zT of 0.52 over 300 – 823 K are obtained in the (SnSe) 0.99 (SnS 2 ) 0.01 sample, which are increased by 33% and 45% compared to those of SnSe, respectively. This study demonstrates a secondary phase alloying strategy to synergistically optimize the electrical and thermal properties of polycrystalline SnSe.
研究领域:
材料科学
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能源转换
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2019
·Vol. 8
·期 3
·1394-1402
·
IF 10.733
Lisi Huang,Jianzhang Lu,Duowen Ma,Chunmiao Ma,Bin Zhang,Hengyang Wang,Guoyu Wang,Duncan H. Gregory,Xiaoyuan Zhou,Guang Han
Constructing nanostructured composite architectures has been considered as an effective strategy to reduce the lattice thermal conductivity (κL) and enhance the dimensionless figure of merit (ZT) of thermoelectric materials. Herein, a series of SnSe/reduced graphene oxide (rGO)-x (x = 0.1, 0.3, 0.5, 0.7 wt%) nanocomposites are controllably synthesised in situ via a facile single-step bottom-up solution method, where rGO nanosheets are incorporated intimately into the SnSe matrix. Nanocompositing performs two key functions: (i) significantly reducing the lattice thermal conductivity of the material, which can be attributed to enhanced phonon scattering from high-density SnSe/rGO interfaces, and (ii) improving the electrical conductivity over the low temperature range, as result of an increased carrier concentration. The subsequent thermoelectric performance of SnSe/rGO sintered pellets has been optimised by tuning the rGO mass fraction, with SnSe/rGO-0.3 achieving κL = 0.36 W m−1 K−1 at 773 K (cutting the κL of SnSe by 33%) to yield a maximum ZT of 0.91 at 823 K (representing a ∼47% increase compared to SnSe). This study provides a new pathway to improve the thermoelectric performance of polycrystalline SnSe by way of engineering metal chalcogenide/rGO composite architectures at the nanoscale.
研究领域:
材料科学
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热电材料
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2019
·
IF 5.155
Marimuthu Karpuraranjith,Yuanfu Chen,Xinqiang Wang,Bo Yu,Sivamoorthy Rajaboopathi,Dongxu Yang
It is still challengeable to develop low-cost metal-based photocatalysts with high efficiency and stability for organic pollutant degradation. Herein, we propose a novel “interfacial engineering and suitable band gap matching” strategy to synthesize hexagonal SnSe nanoplate supported SnO 2 -CNTs for highly efficient photocatalytic activity. The CNTs-SnO 2 /SnSe, constructed by SnO 2 nanoparticles homogeneously embedded in carbon nanotube surface, which is anchored on hexagonally crystalline SnSe nanoplates, is synthesized by a facile low-cost and eco-friendly one-pot solvothermal reaction. Compared to SnO 2 , SnSe, CNTs-SnO 2, SnO 2 /SnSe, the CNTs-SnO 2 /SnSe delivers significant performance, enhancement in photocatalytic degradation for aqueous organic dye pollutant under visible light irradiation in 60 min. The k value of CNTs-SnO 2 /SnSe is over 2.2 times larger than CNTs-SnO 2 , SnO 2 and SnSe. The remarkably enhanced photodegradation performance of CNTs-SnO 2 /SnSe is mainly attributed to its unique nanoarchitecture, high surface area and band gap matching: the CNTs skeleton can facilitate the electron transfer; band gap diagram of CNTs-SnO 2 /SnSe is beneficial to efficient electron-hole charge separation and recombination of electron-hole pair can be effectively suppressed. This work presents a rational catalyst design with nanoarchitecture and band gap matching, and a facile one-pot synthesis strategy to synthesize low-cost photocatalysts for dye pollutant degradation with prominent high-efficiency and long-term stability.
研究领域:
材料科学
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环境科学
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2023
·
IF 13.3
Xinlei Li,Shupeng Sun,Nan Wang,Baoyu Huang,Xiaogan Li
Non-invasive breath testing has gained increasing importance for early disease screening, spurring research into cheap sensors for detecting trace biomarkers such as ammonia. However, real-life deployment of ammonia sensors remains hindered by susceptibility to humidity-induced interference. The SnTe/SnSe heterojunction-based chemiresistive-type sensor demonstrates an excellent response/recovery to different concentrations of ammonia from 0.1 to 100 ppm at room temperature. The improved sensing properties of the heterojunctions-based sensors compared to single-phased SnTe or SnSe can be attributed to the stronger NH 3 adsorptions, more Te vacancies, and hydrophobic surface induced by the formed SnTe/SnSe heterojunctions. The sensing mechanisms are investigated in detail by using in situ techniques such as diffuse reflectance Fourier transform infrared spectroscopy (DRIFTS), Kelvin probe, and a.c. impedance spectroscopy together with the Density-Function-Theory calculations. The formed heterojunctions boost the overall charge transfer efficiency between the ammonia and the sensing materials, thus leading to the desirable sensing features as well, with excellent resistance to ambient humidities.
研究领域:
材料科学
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传感器技术
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医学检测
✓ 已验证
DOI
PubMed
高影响因子
ACS Applied Nano Materials
·
2024
·
IF 5.3
Dequan Xiao,Yan Gong,Jing Zhang,Hui Liu,Lile Dong
Triple-negative breast cancer (TNBC) is one of the most aggressive and challenging subtypes with limited treatment options and poor prognosis. To overcome these obstacles, Ag-doped SnSe (ASS) nanosheets were used as photonic hyperthermia agents for treating TNBC. ASS featured a high photothermal-conversion efficiency and photon hyperthermia effect. Additionally, biosafety assessments, including hemolysis assays and histopathological analysis, confirmed that ASS was biosafety. These findings suggest that ASS, in synergy with the second near-infrared biowindow (NIR-II) light irradiation, offers a noninvasive, effective, and safe therapeutic strategy for TNBC. This innovative approach exemplifies the evolving landscape of TNBC treatment, where technology and biology converge to offer more precise and personalized therapies.
研究领域:
肿瘤学
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纳米医学
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生物材料学
✓ 已验证
产品关联
DOI
高影响因子
Energy & Environmental Science
·
2024
·Vol. 17
·期 4
·1612-1623
·
IF 32.4
Yaru Gong,Pan Ying,Qingtang Zhang,Yuqi Liu,Xinqi Huang,Wei Dou,Yujing Zhang,Di Li,Dewei Zhang,Tao Feng,Meiyu Wang,Guang Chen,Guodong Tang
Polycrystalline SnSe is considered as a highly promising candidate for thermoelectric applications due to its facile processing, machinability and scale-up applications. Here, we report an extraordinary peak ZT of 2.4 as well as a high average ZT of 0.9 for Ge and S codoped SnSe nanorods synthesized by a facile hydrothermal route. The highly preferentially oriented SnSe nanorods along [100] play a dominant role in scattering heat carrying phonons, resulting in ultralow lattice thermal conductivity (0.15 W m−1 K−1 at 873 K). The band alignment in the electronic structure of SnSe is promoted by Ge doping, contributing to a giant Seebeck coefficient and a largely enhanced power factor of 5.84 μW cm−1 K−2 at 873 K. An extraordinarily high peak ZT and a high average ZT are achieved within a wide temperature range for polycrystalline SnSe without involving toxic elements. Moreover, the reported material exhibits outstanding hardness and compressive strength induced by grain refinement. The high thermoelectric performance and mechanical properties of polycrystalline SnSe open realistic pathways for its widespread application in waste heat recovery and power generation.
研究领域:
材料科学
·
热电材料研究
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Gaoning Fan,Weishuai Duan,Mengjiao Dong,Xueting Luo,Pengyu Zhou,Chun Sun,Yonghui Zhang,Mengjun Wang,Chao Fan
As a member of two-dimensional materials, tin disulfide (SnS2) holds great potential for highly sensitive detectors used in high-resolution, low-power imaging. Nevertheless, SnS2-based detectors face challenges, such as a narrow detection range, low responsivity, and slow response speed. In this work, gate-modulated phototransistors based on a tin monoselenide/tin disulfide (SnSe/SnS2) heterostructure were fabricated, demonstrating a spectral response from visible to near-infrared. The phototransistors exhibited a maximum responsivity of 2667.1 A W−1 and an extremely high detectivity of 1.02 × 1013 cm Hz1/2 W−1 under 405 nm illumination. Additionally, they exhibited an extremely high responsivity of 537.6 A W−1 and a high external quantum efficiency of 78.3 × 104% under 850 nm illumination. The photodetection performance could be modulated by the back-gate voltage. At a back-gate voltage of 50 V, the phototransistor achieved an enhanced responsivity of 4002.9 A W−1, surpassing detectors based on individual components and most other two-dimensional materials. This work provides an effective strategy for achieving gate-modulated photodetection performance and broadens the scope of applications for SnS2-based detectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2019
·Vol. 7
·期 26
·15757-15765
·
IF 10.733
Rui Xu,Lulu Huang,Jian Zhang,Di Li,Jizi Liu,Jiang Liu,Jun Fang,Meiyu Wang,Guodong Tang
Thermoelectric materials that can directly convert thermal energy into electrical energy have great potential in solving the present energy crisis. SnSe has emerged as one of the most intriguing new thermoelectric materials since the discovery of the excellent thermoelectric properties of its single crystals. Here, we develop a new solution synthesized method (in situ magnetic field-assisted hydrothermal synthesis) for achieving new nanostructured SnSe integrated with Se quantum dots. The critical nucleation energy reduces and the nucleation rate increases during the hydrothermal synthesis process as a high magnetic field is applied, which leads to the presence of the homogeneous distribution of Se quantum dots and smaller nano grains. Enhanced density of states and the energy filtering effect contribute towards a significant enhancement in the Seebeck coefficient and power factor (PF) due to the Se quantum dots and smaller nano grains. The enhanced density of states was directly identified by ultraviolet photoelectron spectroscopic measurements. With the aid of a high magnetic field in solution chemistry, these materials maintain low thermal conductivity due to the Se quantum dots, smaller nano grains and nanoprecipitates. Benefiting from the enhanced power factor and reduced thermal conductivity, a high figure of merit (ZT) of ∼2.0 at 873 K was achieved in a Se quantum dot/Sn0.99Pb0.01Se nanocomposite. This work paves the way for the design of prospective thermoelectric materials by applying an external high magnetic field.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
Chinese Physics B
·
2018
·Vol. 27
·期 4
·047211
·
IF 1.321
Chengyan Liu,Lei Miao,Xiaoyang Wang,Shaohai Wu,Yanyan Zheng,Ziyang Deng,Yulian Chen,Guiwen Wang,Xiaoyuan Zhou
Thermoelectric selenides have attracted more and more attentions recently. Herein, p-type SnSe polycrystalline bulk materials with good thermoelectric properties are presented. By using the SnSe2 nanostructures synthesized via a wet-chemistry route as the precursor, polycrystalline SnSe bulk materials were successfully obtained by a combined heat-treating process under reducing atmosphere and following spark plasma sintering procedure. As a reference, the SnSe nanostructures synthesized via a wet-chemistry route were also fabricated into polycrystalline bulk materials through the same process. The thermoelectric properties of the SnSe polycrystalline transformed from SnSe2 nanostructures indicate that the increasing of heattreating temperature could effectively decrease the electrical resistivity, whereas the decrease in Seebeck coefficient is nearly invisible. As a result, the maximum power factor is enhanced from 5.06\times {10}^{-4}\,{\rm{W}}/{\rm{m}}\cdot {{\rm{K}}}^{2} to 8.08\times {10}^{-4}\,{\rm{W}}/{\rm{m}}\cdot {{\rm{K}}}^{2} at 612 °C. On the other hand, the reference sample, which was obtained by using SnSe nanostructures as the precursor, displays very poor power factor of only 1.30\times {10}^{-4}\,{\rm{W}}/{\rm{m}}\cdot {{\rm{K}}}^{2} at 537 °C. The x-ray diffraction (XRD), scanning electron microscope (SEM), x-ray fluorescence (XRF), and Hall effect characterizations suggest that the anisotropic crystal growth and existing Sn vacancy might be responsible for the enhanced electrical transport in the polycrystalline SnSe prepared by using SnSe2 precursor. On the other hand, the impact of heat-treating temperature on thermal conductivity is not obvious. Owing to the boosting of power factor, a high zT value of 1.07 at 612 °C is achieved. This study provides a new method to synthesize polycrystalline SnSe and pave a way to improve the thermoelectric properties of polycrystalline bulk materials with similar layered structure.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子