COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
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2024
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IF 4.9
Yang Yang,Yunlong Zhou,Peng Ji,Pingping Yang,Jianxiong Xu,Na Li
Zinc-ion hybrid capacitors (ZIHCs) with high energy density is commercial need as energy storing devices, but facile preparation is still a challenge. Herein, we proposed a combined strategy for preparation of ZIHCs with high performance. For this purpose, a nanoemulsion assembly approach with Pluronic F127 as structure-directing agent, 1, 3, 5-trimethylbenzene as pore-expanding agent, polydopamine as carbon and nitrogen source, was used to synthesize hierarchically N-doped porous carbon spheres (N-HNCSs). The optimized sample of N-HNCS-1 exhibited uniform size of 150 nm, hierarchically porous structure, large surface area (705.46 m 2 g −1 ), and N-doping amount of 6.51 %. These properties were beneficial for the transportation of the electrolyte ions resulted in that the N-HNCS-1 electrode displayed superior electrochemical performance with specific capacity of 142 mAh g −1 . Furthermore, the Zn//ZnSO 4 + ZnI 2 //N-HNCS-1 ZIHCs achieves an exceptionally high energy density of 347.7 Wh kg −1 , which is 3-fold higher than that of Zn//ZnSO 4 //N-HNCS-1 ZIHCs. To elucidate this outstanding performance, we investigate the mechanisms involved, including Zn 2+ deposition/stripping, SO 4 2- /I - adsorption/desorption, Zn 4 SO 4 (OH) 6 ⋅0.5 H 2 O precipitation/dissolution, and redox reactions relating to iodine ions . The incorporation of ZnI 2 redox-electrolyte significantly enhanced the energy density by providing prominent pseudocapacitance via the faradaic reaction. Therefore, the high performance of Zn//ZnSO 4 + ZnI 2 //N-HNCS-1 ZIHCs is attributed to the introduction of nitrogen (N) species, advantageous 3D carbonaceous framework, and redox reactions triggered by adding zinc iodide (ZnI 2 ) into the aqueous zinc sulfate (ZnSO 4 ) electrolyte. This groundbreaking research opens up possibilities for the development of high-energy ZIHCs, and advancements in energy storage technology.
研究领域:
材料科学
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能源存储技术
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DOI
高影响因子
ACS Applied Optical Materials
·
2026
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IF 3.4
Shichao Rao,Wentao Niu,Zhongwei Man,Xiulin Xie,Zhe Yin,Yue Qin,Shuaibing Wang,Ouyang Lin,Aiwei Tang
The advancement of environmentally benign I–III–VI colloidal quantum dots (QDs) has established a promising materials platform to replace cadmium-based counterparts. However, in practical device architectures, especially blue-emitting devices, abundant surface nonradiative recombination centers and imbalanced carrier injection often lead to suboptimal device performance, thereby hindering their deployment in display technologies. Herein, we employ a zinc iodide (ZnI2) post-treatment for the Cu–Ga–Zn–S (CGZS) QDs film strategy, effectively passivating surface defects and nonradiative sites, thereby enhancing device performance. The treated QDs facilitate the formation of an interface dipole, which effectively elevates the overall energy levels of the QDs while simultaneously reducing the hole injection barrier, leading to an enhanced hole injection efficiency. Working in concert, these effects facilitate balanced carrier injection and optimize exciton recombination, thereby boosting the device efficiency and operational stability. Consequently, the peak external quantum efficiency (EQE) exhibits a favorable improvement, increasing from 1.01% in the pristine device to 1.90% after treatment. This work offers an effective approach to achieving balanced carrier injection in quantum-dot light-emitting diodes (QLEDs) and establishes a solid foundation for the development of high-performance, cadmium-free, blue-emitting QLEDs.
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高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 46
·16682-16692
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IF 7.393
Xiao-Yi Cai,Yi Yu,Yong-Chun Ye,Yang Shen,Ming-Lei Guo,Jing-Kun Wang,Kong-Chao Shen,Yan-Qing Li,Jian-Xin Tang
Metal halide perovskite light-emitting diodes (PeLEDs) have been recognized as emerging candidates for next-generation solution-processed electronic display technology, and great progress has been made in recent years. However, their poor operational stability is yet to be solved. Here, we present a reformative all-inorganic red-emission PeLED based on the passivation effect caused by the incorporation of zinc ions into perovskites for enhancing the efficiency and operational stability. A high-quality quasi-two-dimensional perovskite CsPbI3−xBrx thin film with good crystallinity is obtained, benefiting from the combination of large organic ammonium ions (PEA+ ions) and inorganic salt zinc iodide (ZnI2). As a result, ZnI2-passivated CsPbI3−xBrx PeLEDs emitting at 666 nm show a maximum external quantum efficiency of 9.93% and a maximum brightness of 4258 cd m−2. More importantly, the PeLEDs achieve a long half-lifetime of about 2667 h at an initial luminance of 100 cd m−2. This work provides a facile method to obtain stable and efficient red-emission PeLEDs.
研究领域:
材料科学
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光电子学
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纳米技术
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DOI
高影响因子
APPLIED SURFACE SCIENCE
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2023
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IF 6.7
Jingcong Hu,Chenghao Bi,Xuetao Zhang,Bohai Tian,Yue Lu,Jianjun Tian,Manling Sui
With the rapid development of all-inorganic CsPbX 3 (X = I, Br, and Cl) perovskite light-emitting diodes (PeLEDs), their external quantum efficiency (EQE) has made great progress in the last few years. However, severe performance degradation at the operation condition impedes its large-scale industrial application. In this text, by using the advanced spherical aberration corrected transmission electron microscope (TEM), the degradation pathway of PeLEDs under bias loading was more systematically and comprehensively, especially from the viewpoint of its microstructural evolution pathway, which showed that iodine vacancy migration triggered the structural collapse was the primary inducement of performance decay. To solve this problem, inorganic termination ZnI 2 was employed to passivate the surface halide vacancy defects and supplement the halide ion into the lattice, which significantly improves the photoluminescence (PL) lifetime and stability of CsPbI 3 quantum dots (QDs). As expected, not only the EQE of PeLEDs has been greatly improved, but also the operating half-lifetime is enhanced by about 4 times as compared with the original one. Microstructural characterization and density functional (DFT) calculations confirm that the preferential segregation of Zn element on the surface of QDs was the principal cause to passivate the defect state of QDs, which exhibits lower formation energy and better operational stability.
研究领域:
材料科学
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光子学
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半导体物理
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DOI
高影响因子
Advanced Optical Materials
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2024
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IF 8
Zhongyuan Guan,Yang Huang,Zhaojin Wang,Jiayun Sun,Chengwei Shan,Yiguo Xu,Dan Wu,Aiwei Tang,Xiao Wei Sun,Kai Wang
The development of cadmium-free blue quantum dots (QDs) is of paramount importance to the display industry. In this study, high-quality ZnSeTe/ZnSe/ZnS blue QDs, followed by surface treatment with ZnI 2 are initially synthesized. The introduction of ZnI 2 passivated the surface defects, resulting in an increase in the fluorescence quantum yield. The time-resolved photoluminescence (TRPL) demonstrates a significant inhibition of non-radiative recombination associated with the surface defect state. The density functional theory (DFT) calculation reveals that the binding energy between iodine ions and zinc ions is higher than that between oleate ions and zinc ions, providing a theoretical basis for the effective passivation of the suspended bonds of zinc ions on QDs' surface by iodine ions. Moreover, quantum dot light-emitting diodes (QLEDs) are fabricated and UV photoelectron spectra (UPS) indicate the hole injection barrier between the hole transport layer and QDs decreases 0.12 eV after QDs being treated by ZnI 2 , facilitating hole injection. Finally, The ZnI 2 -treated QLED demonstrates a 1.57-fold and 1.82-fold improvement in L max and EQE max , respectively, reaching 6370 cd m −2 and 9.1%, compared to the pristine QLED. The work serves as a valuable reference for enhancing the performance of cadmium-free blue QLED.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子