JOURNAL OF LUMINESCENCE
·
2025
·
IF 3.6
Qinghong Meng,Jiaming Yuan,Wanjun Yu,Xiangming Li,Yaping Wang,Zhijun Xu,Ji-Guang Li
To meet the diverse requirements of the near-infrared (NIR) phosphor-converted light-emitting-diodes (NIR pc-LEDs) in various fields, high-performance broadband NIR-emitting phosphors are attracting growing interest. A novel garnet-type Gd 2 CaAl 3‒ y GaZrO 12 : y Cr 3+ (GCAGZ: y Cr) NIR phosphor with satisfactory luminescence efficiency and thermal stability was discovered in this work. The typical GCAGZ:0.04Cr phosphor exhibited highly efficient (IQE = 93.3 %, EQE = 20.0 %) broadband NIR emission with peaking at ∼748 nm (full-width at half-maximum ∼102 nm) and excellent thermal stability (88.3 %@423 K) under 450 nm light excitation, owing to the wide band gap of the garnet host, the relatively weak crystal field environment, and the exceedingly weak electron-phonon coupling effect. The NIR pc-LED device constructed by coating this GCAGZ:0.04Cr phosphor on a 450 nm blue LED chip presented outstanding NIR output power (∼44.8 mW) and photoelectric conversion efficiency (19.8 %) under a driving current of 100 mA, showing that this phosphor has huge potential utilized in the construction of NIR pc-LED applied in plant growth lighting, night vision, and non-invasive medical diagnosis.
研究领域:
光学材料
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光子学
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固态照明
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半导体器件
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发光材料
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产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·Vol. 50
·期 18
·32662-32669
·
IF 5.1
Li Li,Haoliang Yang,Yongjie Wang,Xianju Zhou,Faling Ling,Huajing Gao,Zhiyu Yang,Xiantong Tang,Yongbin Hua
The development of medical, military, and other fields has greatly increased the demand for broadband near-infrared light sources . This article reports that Sr 3 Sc 2 Ge 3 O 12 : Cr 3+ (SSGO: Cr 3+ ), a broadband near-infrared phosphor with 850 nm as the luminescence center, has an emission spectrum covering 700–1200 nm and a full width at half maximum (FWHM) of 125 nm under 490 nm excitation. To further increase the FWHM value, Yb 3+ is introduced into the phosphor of SSGO: Cr 3+ to enable energy transfer from Cr 3+ to Yb 3+ . After doping 1 % of Yb 3+ onto the Sr 2+ site, the near-infrared emission generated by the 4 A 2 → 4 T 1 (4P) transition of Cr 3+ and the near-infrared emission generated by the 2 F 5/2 → 2 F 7/2 transition of Yb 3+ work so that the FWHM increases to 220 nm. In addition, the thermal stability of the phosphor after co-doping with Yb 3+ is also greatly enhanced from 61.6 % to 75.1 % by comparing it to the Cr 3+ single-doped sample. In addition, SSGO:0.08Cr 3+ , 0.01 Yb 3+ was combined with a commercial 490 nm chip to prepare a broadband near-infrared light-emitting diode (pc-LED).
研究领域:
材料科学
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光学材料
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光子学
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固态照明
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能量传递
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DOI
高影响因子
ACS Applied Optical Materials
·
2024
·
IF 0
Yonghang Li,Yang Lu,Haonan Ju,Wei Wang,Dong Tu,Hongyu Lu,Jiayu Wang,Hua Zou
Near-infared phosphor-converted light-emitting diodes (NIR pc-LEDs) are next-generation NIR light sources due to their long life, low cost, and compactness. Unfortunately, there is a lack of efficient NIR-II phosphors with high efficiency and large full width at half-maximum (fwhm) that can be excited by violet LED. Here, a series of Cr3+/Ni2+-codoped LiAlSiO4 with unprecedented emission peaking at 1150 nm (∼1000–1400 nm, fwmh ∼191 nm) were synthesized via a solid-state reaction. More importantly, the phosphors exhibit high efficiency and excellent thermal stability under violet emission excitation. Moreover, the NIR pc-LED devices as a NIR-II light source have been fabricated through a combination violet LED and optimized LiAlSiO4:Cr3+/Ni2+ phosphors, which are well applied to high-penetration imaging and nondestructive fruit damage inspection. These results indicate that the LiAlSiO4:Cr3+/Ni2+ phosphors have great potential applications as NIR light sources.
研究领域:
材料科学
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光学工程
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电子器件
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DOI
Journal of Materials Chemistry C
·
2023
·Vol. 11
·期 27
·9291-9299
·
IF 6.4
Yining Wang,Mengmeng Shang,Yixin Sun,Minliang Deng,Xiaole Xing,Peipei Dang,Jun Lin
With the increasing demand for the application of near-infrared (NIR) spectroscopy in security, agriculture, medical and other fields, people have been seeking efficient and intelligent NIR light sources. Herein, Cr3+ doped Ca3Sc2Ge3O12 (CSGG) broadband NIR phosphors are successfully synthesized. Under excitation of 480 nm, the emission peak of CSGG:Cr3+ is located at 785 nm, and the full width at half maximum (FWHM) is 106 nm. Low photoluminescence spectra (7 K and 77 K) support the broadband NIR emission coming from two Cr3+ luminescence centers occupying ScO6 and CaO8 sites, respectively. CSGG:Cr3+ exhibits excellent thermal stability (97% at 100 °C) and low internal quantum efficiency (IQE = 22%). The introduction of Ce3+ leads to the enhancement of IQE from 22% to 61% due to the following two reasons: the energy transfer from Ce3+ to Cr3+ and the lattice distortion which improves the parity forbidden transition of Cr3+. The mechanism of excellent luminescence thermal stability is revealed from the following perspectives: thermal activation energy, the Huang–Rhys factor and the thermal ionization effect. Benefiting from the excellent performance of CSGG:Cr3+,Ce3+ NIR phosphors, the combination with blue light chips demonstrates their potential applications in night vision security, biological imaging, and nondestructive testing.
研究领域:
材料科学
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光学
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生物医学工程
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DOI
高影响因子
INORGANIC CHEMISTRY COMMUNICATIONS
·
2026
·
IF 5.9
Yichen Yang,Xiaojiao Kang,Qiwen Pan,Zhennan Zhu,Wei Lü
Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are gaining significant interest due to their potential in spectroscopic applications. NIR phosphors play a critical role in pc-LED devices by converting visible light into NIR emission with high stability and tunability. In this study, an efficient broadband NIR phosphor, Ca 3 TiTaGa 3 O 12 :Cr 3+ , is developed and systematically investigated. Ca 3 TiTaGa 3 O 12 :Cr 3+ exhibits a broad NIR emission band centered at 790 nm with a full width at half maximum (FWHM) of 202 nm upon 450 nm blue light excitation. The emission bandwidth is further expanded to 303 nm by introducing an optimal amount of Yb 3+ co-doping, which produces a merged ultra-broadband Cr 3+ –Yb 3+ emission. Luminescence and decay kinetic analysis reveal that the resultant ultra-broadband emission originates from effective energy transfer Cr 3+ to Yb 3+ . Moreover, the Yb 3+ co-doping enhances the internal quantum efficiency from 30.5% to 41.3%, and improves thermal stability with emission retention increasing from 42.6% to 57.4% at 150 °C. The Ca 3 TiTaGa 3 O 12 :Cr 3+ and Ca 3 TiTaGa 3 O 12 :Cr 3+ , Yb 3+ phosphors are successfully integrated with a 450 nm blue LED chip, demonstrating their potential for practical NIR pc-LED device applications in night vision and bioimaging.
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产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2026
·
IF 5.6
Juhang Liang,Xinxin Han,Hengjuan Deng,Shasha Wang,Dongxi Liu,Kui Zhang,Bingsuo Zou
The development of efficient and thermally stable near-infrared (NIR) phosphors is crucial for advancing next-generation smart NIR lighting sources, yet remains a formidable challenge. Herein, we report a high-performance K 2 NaAlF 6 :Mn 4+ ,Cr 3+ phosphor engineered via an efficient energy transfer strategy. The optimized phosphor exhibits a dominant NIR emission peak at 725 nm and achieves an exceptional energy transfer efficiency of 87.5 % from Mn 4+ to Cr 3+ . This efficient energy transfer, combined with the enhanced Cr 3+ absorption, contributes to a 91 % enhancement in NIR emission intensity and an increase in internal quantum efficiency from 74.0 % to 82.7 %. Meanwhile, the thermal stability is also significantly improved, with the co-doping sample retaining 83.4 % of its emission intensity at 425 K compared with 73.6 % for the singly Cr 3+ -doped counterpart, which is attributed to the enhanced lattice rigidity and the energy transfer process induced by Mn 4+ doping. A NIR phosphor-converted light-emitting diode (NIR pc-LED) fabricated with this phosphor and a blue chip demonstrates outstanding performance in applications of bioimaging, non-destructive testing and night vision imaging. Furthermore, its outstanding scintillation properties also enable high-resolution X-ray imaging. This work establishes a feasible design strategy for developing advanced multifunctional NIR luminescent materials that simultaneously achieve high efficiency and excellent thermal stability.
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Qinghong Meng,Yuning Zhang,Xiangming Li,Wanjun Yu,Zhijun Xu,Ji-Guang Li
Doping Gd 3 Ga 3 Al 2 O 12 :Cr 3+ with Mg 2+ /Si 4+ pair to develop Gd 3 Ga 3 – y Al 2 – 2 x Mg x Si x O 12 : y Cr 3+ ( x = 0–1.0; y = 0.005–0.05) new garnet solid solution was implemented for the regulation of structure and photoluminescence. Rietveld refinement, SEM/TEM, and UV-Vis-NIR/photoluminescence spectroscopy analysis clarified that Mg 2+ /Si 4+ incorporation increasing resulted in the enlargement of the unit cell, the expansion/larger distortion of [(Ga,Al,Mg,Cr)O 6 ] octahedron, the decrease of crystal field strength, red-shifting and broadening of emission band, and shortening decay times. The optimal Gd 3 Ga 2.97 MgSiO 12 :0.03Cr 3+ phosphor realized broadband NIR emission (centered at ∼760 nm, full-width at half-maximum ∼114 nm) under 450 nm light excitation and exhibited high quantum efficiency (IQE=71.0 %, EQE=29.4 %) and good thermal stability (78.5 %@423 K). The NIR pc-LED fabricated by combining this optimal phosphor with a 450 nm blue LED chip showed satisfactory output power (∼26.83 mW) and conversion efficiency (10.02 %) under a driving current of 100 mA, indicating that this phosphor has huge potential utilized in the construction of NIR pc-LED applied in night vision and noninvasive medical diagnosis.
研究领域:
材料科学
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光学材料
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固态照明
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无机化学
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光子学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF RARE EARTHS
·
2024
·
IF 5.2
Sihan Yang,Xuyan Xue,Feng Jiang,Liang Dong,Qi Zhu,Xuejiao Wang,Ji-Guang Li
The emission wavelength of current near-infrared phosphors activated by Cr 3+ is generally smaller than 900 nm in near-infrared (NIR) I region, and it is extremely challenging and is of great practical significance to realize emission towards NIR-II region. In this study, a novel Cr 3+ excited KSrScSi 2 O 7 silicate broad-band phosphor was prepared using the traditional solid-state method. Cr 3+ resides in a weak crystal field in the KSrScSi 2 O 7 lattice and exhibits broad-band near-infrared emission at 984 nm, longer than those of most Cr 3+ activated phosphors, under 493 nm blue light excitation. This is due to the strong charge polarization caused by the unique local coordination environment of the silicate matrix, which leads to a reduction in the crystal field splitting energy of the [ScO 6 ] octahedron where Cr 3+ is located and the downward shift of the 4 T 2 energy level. The optimal doping concentration of Cr 3+ is found to be 2 mol%, and the quenching mechanism is dipole-dipole interaction. Compared to the phosphors with similar emission wavelengths ( λ em > 900 nm), KSrScSi 2 O 7 :Cr 3+ demonstrates outstanding advantages in various aspects of luminescent performance. The fabricated phosphor-converted light-emitting diode (pc-LED) is shown to have the potential for night vision and non-invasive imaging. Novel application of KSrScSi 2 O 7 : x Cr 3+ as stable green ceramic pigments is also explored. The KSrScSi 2 O 7 : x Cr 3+ powders show a bright yellowish green appearance, and the KSrScSi 2 O 7 :0.02Cr 3+ typical composition has chromaticity values of L* = 82.73, a* = –8.53, b* = 7.97. Remarkably, the glazing samples using KSrScSi 2 O 7 : x Cr 3+ as pigments well retain the bright color after 1200 °C sintering in different atmospheres. Therefore, multi-functional applications of KSrScSi 2 O 7 : x Cr 3+ for near-infrared spectroscopy and as ceramic pigments are achieved in this work.
研究领域:
材料科学
·
光学
·
陶瓷科学
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2021
·
IF 4.527
Sijin Zhang,Shujie Gai,Xiaojuan Zhang,Mao Xia,Zhi Zhou,Xiao Cheng,Maohai Yao,Maxim S. Molokeev,Qiuju Feng
Red and far-red emitting phosphors have been widely used in phosphor-converted light emitting diode (pc-LED) devices to provide lighting for indoor plant growth, thus achieving desired product qualities. Among the many ways to optimize phosphors’ optical performance, cationic substitution is one of the most effective methods. In this study, red phosphors (Li 2 MgTi 1- x - y O 4 : x Mn 4+ , y Ge 4+ ) were synthesized by high temperature solid state method and the optical performance of phosphors were improved with increasing Ge 4+ constituents. In particular, luminescence intensity of Li 2 MgTiO 4 : 0.002Mn 4+ , 0.1Ge 4+ increased by 152% under 468 nm excitation, and the thermostability of emission intensity increases from 22% ( y = 0) to 43% ( y = 0.1), which is about twice as much. Finally, pc-LED device was fabricated via the red phosphor Li 2 MgTiO 4 : 0.002Mn 4+ ,0.1Ge 4+ coated on a 470 nm ultraviolet chip. By changing the proportion of the phosphor, the electroluminescence spectra of pc-LED device could match well with the absorption regions of plant pigments. Therefore, Li 2 MgTiO 4 : 0.002Mn 4+ , 0.1Ge 4+ phosphor has potential application in plant lighting. Furthermore, this work can offer some helpful references for improving luminescent efficiency by simply modulating the chemical composition.
研究领域:
材料科学
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光学
·
农业工程
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Mingkai Wei,Yiteng Liang,Jinlun Zeng,Tianzhu Zhao,Yanjun Hao,Xuejie Zhang,Wei Li,Haoran Zhang,Bingfu Lei
The performance of near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) is dependent on the performance of the phosphor applied to the LED surface; however, the challenges of low external quantum efficiency (EQE) and insufficient thermal stability of NIR phosphors remain. Herein, we propose a novel nonprimary lattice substitution strategy (Y3+ → Gd3+) to enhance the structural rigidity of Gd1–yAl3–x(BO3)4:xCr3+,yY3+ phosphor. Unlike conventional host-site substitutions, this approach induces compressive strain on the [Al/CrO6] octahedron via a Gd3+/Y3+ size mismatch, thereby increasing bond energy and suppressing electron–phonon coupling. The optimized phosphor emits NIR light in the range of 650–1000 nm under 430 nm excitation, with the thermal stability (@423 K) improving from 73.8% to 92.5%, and the EQE is effectively improved. A prototype NIR pc-LEDs fabricated with a 450 nm chip delivers 40.4 mW output power at 100 mA with 14.7% photoelectric efficiency, demonstrating ultralow quenching rate (<6% intensity loss after 30 days operation). The NIR pc-LEDs was used in butter lettuce cultivation experiments, and the results showed that the growth pattern of butter lettuce changed significantly and the biomass increased significantly (28.9%). In addition, the potential for application in organic detection was demonstrated. This work provides a lattice engineering route to design stable NIR phosphors for multifunctional photovoltaic applications.
研究领域:
材料科学
·
光电子学
·
固态照明
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园艺光子学
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发光材料
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2021
·Vol. 10
·期 4
·2102229
·
IF 9.926
Leqi Yao,Qiyue Shao,Meiling Shi,Tianqi Shang,Yan Dong,Chao Liang,Jinhua He,Jianqing Jiang
Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold great potential for applications ranging from night vision to non-destructive detection. However, it remains a long-standing challenge to develop NIR phosphors simultaneously with longer-wavelength broadband emissions and higher efficiency. Herein, ultra-broadband Ga 4 GeO 8 :Cr 3+ (GGO:Cr 3+ ) phosphors are developed, with the NIR emission covering 700–1300 nm. Furthermore, tunable emission bands peaking from 835 to 980 nm are achieved simply by varying the Cr 3+ concentration. Particularly, emission maxima (λ max ) of GGO: x Cr 3+ shift from 850 to 900 nm without intensity loss when increasing x values between 0.02 and 0.10. An internal quantum yield of 60% is achieved for GGO:0.02Cr 3+ (λ max ≈ 850 nm, full width at half maximum (FWHM) ≈215 nm). The origin of tunable ultra-broadband emissions of GGO:Cr 3+ is revealed on the basis of structural and time-resolved spectroscopic analysis. The pc-LED fabricated by GGO:0.02Cr 3+ exhibits a maximum NIR output power of ≈56 mW at 400 mA drive current, and its application in high-penetration quality analysis of fruits is also demonstrated. The results indicate that GGO:Cr 3+ phosphors have high promise for practical applications in NIR pc-LED devices.
研究领域:
材料科学
·
光电子学
·
光子学
·
固态照明
·
光谱学
✓ 已验证
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2026
·
IF 3.8
Xi Chen,Xiyong Chen,Hui Fu,Qiming Huang,Jialiang Jiang,Zhentao Du,Jialong Zhao,Weiyou Yang,Kanybek Osmonaliev,Samat Toktogonov,Jinju Zheng
Dual-band near-infrared (NIR) phosphors simultaneously covering the NIR-I (700-1000 nm) and NIR-II (1000-1700 nm) windows are highly desirable for practical optoelectronic devices, yet conventional rare-earth doped systems typically rely on ultraviolet sensitization. Herein, we report Yb 3+ /Er 3+ co-doped Cs 2 NaHoCl 6 double perovskite microcrystals (MCs) synthesized via a green aqueous-phase evaporation method, in which the intrinsic ∼450 nm absorption of Ho 3+ serves as a self-sensitizer, enabling competitive energy transfer from Ho 3+ to Yb 3+ and Er 3+ , predominantly via dipole-dipole interactions. This generates efficient dual-band emissions at 985 nm (NIR-I) and 1540 nm (NIR-II), with a high photoluminescence quantum yield (PLQY) of 85.6% under blue-light excitation, alongside excellent thermal stability and photostability. An NIR phosphor-converted light-emitting diode (pc-LED) fabricated with the optimized phosphor demonstrates practical utility in night vision, non-destructive detection, and high-contrast biological imaging. This work establishes an eco-friendly route for mass-producing efficient dual-band NIR emitters directly compatible with commercial blue LED chips.
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DOI
高影响因子
危险品化学品经营许可证（带存储）