CHINESE CHEMICAL LETTERS
·
2016
·Vol. 27
·期 12
·1781-1787
·
IF 1.947
Zhuo-Ting Huang,Guo-Biao Xue,Jia-Ke Wu,Shuang Liu,Huan-Bin Li,Yu-Hui Yang,Feng Yan,Paddy K.L. Chan,Hong-Zheng Chen,Han-Ying Li
The n-channel behavior has been occasionally reported in the organic field-effect transistors (OFETs) that usually exhibit p-channel transport only. Reconfirmation and further examination of these unusual device performances should deepen the understanding on the electron transport in organic semiconductors. 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene), a widely examined p-channel material as Au is used for source-drain electrodes, has recently been reported to exhibit electron transport when grown from non-polar solvent on divinyltetramethyldisiloxanebis (benzocyclobutene) (BCB) dielectric, spurring the study on this unusual electron transport. This paper describes FET characteristics of solution-grown TIPS-pentacene single crystals on five polymer gate dielectrics including polystyrene (PS), poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP), poly(vinyl alcohol) (PVA) and poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)). In addition to the p-channel behavior, electron transport occurs in the crystals on PMMA, PS, thick PVA (40 nm) and a bilayer dielectric of PMMA on P(VDF-TrFE-CFE), while does not on PVP and thin PVA (2 nm). The two distinct FET characteristics are consistent with the previous reported trap effect of hydroxyl groups (in PVP and PVA) and reduced injection barrier by Na + ions (as impurity in PVA). The highest electron mobility of 0.48 cm 2 V −1 s −1 has been achieved in the crystals on PMMA. Furthermore, the electron transport is greatly attenuated after the crystals are exposed to the vapor of a variety of polar solvents and the attenuated electron transport partially recovers if the crystals are heated, indicating the adverse effect of polar impurities on electron transport. By reconfirming the n-channel behavior in the OFETs based on TIPS-pentacene, this work has implications for the design of n-channel and ambipolar OFETs.
研究领域:
有机电子学
·
材料科学
·
半导体物理
·
薄膜晶体管
·
电荷传输
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DOI
高影响因子
Advanced Electronic Materials
·
2023
·Vol. 9
·期 11
·2300392
·
IF 6.2
Guangliang Li,Lingxian Kong,Qi Su,Xianhua Tan,Xuning Zhang,Zhiyong Liu,Tielin Shi,Guanglan Liao,Bo Sun
Few-layer black phosphorus (FL-BP) shows great potential in infrared polarization-sensitive photodetection due to its narrow bandgap and strong in-plane anisotropy. However, FL-BP is easy to be oxidized and degraded, which severely restricts its applications. Herein, a simple and scalable in situ interfacial passivation method based on pentacene film is reported to enhance the ambient stability of FL-BP as well as achieve n-type doping for improved polarization-sensitive photoimaging. High crystal quality FL-BP flakes with intrinsic anisotropy are prepared by electrochemical exfoliation. The morphology and Raman spectra of FL-BP/pentacene exhibit excellent stability 28 days after passivation. In addition, the hole mobility is significantly enhanced and dark current is substantially suppressed due to the interfacial passivation and n-type doping effect. The FL-BP/Pentacene based photodetector shows a broadband response from visible to near-infrared with good stability. The photoresponsivity under 915 nm illumination is calculated as 2.2 mA W −1 with an anisotropy ratio of 1.29. Furthermore, the polarization imaging under the irradiation at zigzag and armchair directions directly reveals the strong infrared polarization-sensitive imaging capability of FL-BP/pentacene. This work also opens up new avenues to enhance the photoresponse and stability of various optoelectronics based on similarly unstable 2D materials.
研究领域:
纳米材料学
·
光电子学
·
二维材料
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半导体物理
·
红外成像
·
表面科学
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DOI
高影响因子
CARBON
·
2023
·
IF 10.9
Lu Han,Dehui Wang,Mengdie Li,Yang Zhong,Kanghong Liao,Yingbo Shi,Wenjing Jie
As the development of neuromorphic computing , it is meaningful to explore the synaptic memristors based on organic materials owing to their advantages in low cost, good mechanical flexibility and strong biocompatibility. In this work, organic pentacene thin films have been deposited on different substrates by the thermal evaporation method. The prepared thin films on SiO 2 /Si substrates demonstrate the co-existence of digital and analog resistive switching (RS) behaviors as well as a series of synaptic plasticity. To characterize the flexibility of the organic thin films, lateral memristors have been fabricated on polyethylene terephthalate (PET) substrates and demonstrate comparable RS behaviors when the bending radius is decreased to 1.26 cm or after 1000 bending. Furthermore, vertical memristors with Pt/pentacene/indium tin oxide (ITO) structure have been constructed when the organic thin films are deposited on ITO/PET substrates, exhibiting bipolar RS behaviors with low SET voltage of 0.65 V. The vertical synaptic memristors can be used to simulate the “learning-forgetting” experience of human brain. More importantly, an artificial neural network (ANN) can be simulated based on the vertical synaptic memristors, demonstrating 93.8 % recognition accuracy for hand-written digit image. This study suggests potential applications of the organic pentacene thin films for neuromorphic computing.
研究领域:
材料科学
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微电子学
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生物电子学
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纳米科技
·
神经工程
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DOI
高影响因子
PHYSICAL REVIEW B
·
2025
·Vol. 111
·期 20
·205402
·
IF 3.7
Yu Yu,Bin Li,Guoteng Ma,Qingqing Luo,Chunguang Hu,Wanfu Shen
In situ and real-time monitoring reveals the dynamic reactions, changes, and even unexpected constructions occurring during the growth process, which is crucial for understanding the fundamental growth mechanism and control of film quality. The solution-based growth approach is widely applied for organic semiconductors because of its easy implementation, low costs, and large-scale growth, whereas its in situ monitoring is yet less studied. Here, we developed a fast differential reflectance spectroscopy (DRS) system for real-time monitoring of drop-casting growth of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene). The results demonstrate that the extremely low-drift DRS could successfully capture the growth process of TIPS-pentacene thin film, including the ultrafast solvent evaporation, transient liquid-solid transition, and eventually formation of the TIPS-pentacene film. A four-phase optical model was developed to fit the in situ collected DRS spectra, which revealed the dynamic changes in the volume fraction of TIPS-pentacene solution and the effective thickness of TIPS-pentacene film. This work demonstrates an effective approach to in situ monitoring of physical and even chemical reactions at the liquid-solid interface.
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DOI
高影响因子
MACROMOLECULAR CHEMISTRY AND PHYSICS
·
2023
·
IF 2.5
Jiufu Zhu,Shizhang Li,Dacheng Bai,Dongye Pan,Jiawei Zou,Yan Zheng,Bowen Zhang,Xiaojuan Hao,Wei Wang,Zuosen Shi,Zhanchen Cui
Mobility is an important parameter to estimate the performance of organic thin-film transistors, one of the key factors affecting the mobility is the first several semiconductors molecular layers near the insulator surface. A strategy is proposed to introduce aromatic-rings in the gate insulating layer to modulate the growth of pentacene, thus a series of aryl group containing polymers by reversible-addition-fragmentation chain-transfer polymerization is synthesized for the preparation of organic thin-film transistor insulators. The semiconductor layer is evaporated on the polymer insulators at room temperature. As the inducing function of the aromatic ring, greater weak interactions between dielectric materials and semiconductors by simulation, which makes the initial pentacene layer weak epitaxial growth, therefore pentacene could form better morphology, especially larger crystal domains and uniform thin-film continuity. The results show that precision design and synthesis of polymer insulator layers provide new methods to achieve high performance of organic thin-film transistors with easier fabricating process.
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