Advanced Optical Materials
·
2024
·Vol. 12
·期 22
·2400664
·
IF 8
Ziheng Lin,Xuanhao Yuan,Ruize Wang,Yan Li,Lei Shi,Weili Cui,Lishan Liang,Zihao Huang,Fei Tian,Yong Sun,Chengxin Wang
BiSCl, which shares the anisotropic chain-like lattice configuration with the Bi V X VI Y VII (XS, Se; YCl, Br, I) family displays high photoelectric conversion efficiency in the UV–vis wavelength region. The current difficulty in 2D growth restricts the investigation of device performance and further integration. Herein, an epitaxial growth strategy for 2D BiSCl is proposed based on the principle of sharing a chloridion layer at the BiSCl/BiOCl interface. The interfacial atomic arrangement is carefully revealed using atomic resolved AC-TEM(Spherical Aberration High Transmission Electron Microscope) and demonstrated by calculations based on density functional theory. Benefiting from its compatibility with PS-assisted large-scale transfer technology, the photoelectric performance is evaluated by constructing a standard symmetrical photoconductor and Graphene-BiSCl Schottky junction device. High responsivity (1.71 × 10 4 A W −1 ) and detectivity (5.9 × 10 16. Jones) are achieved at 405 nm, and robustness is shown in a broadband spectrum, which manifested prominent anisotropic photoelectric behavior and great potential in weak-light detection. These results elucidate the photoelectric applications of BiSCl semiconductors and the structural design of the Bi V X VI Y VII family.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
半导体物理
·
薄膜生长
✓ 已验证
DOI
高影响因子
ACS Nano
·
2017
·
IF 13.942
Xiaoming Li,Dejian Yu,Jun Chen,Yue Wang,Fei Cao,Yi Wei,Ye Wu,Lin Wang,Ying Zhu,Zhiguo Sun,Jianping Ji,Yalong Shen,Handong Sun,Haibo Zeng
Intrinsically high mobility and large absorption coefficient endow inorganic halide perovskites (IHPs) with great promise for high-performance photodetectors (PDs), which, however, are being hindered by the low carrier extraction and transport efficiency of the solution assembled films. Here, we report on a general strategy to enhance the perovskite film conductivity that carbon nanotubes (CNTs) conductive nanonets are constructed from to provide fast carrier tracks. Resultantly, the CsPbBr3 nanosheet/CNT composite films exhibit both high light harvesting and high conductivity, such advantages are demonstrated by the high performances of corresponding planar PDs. Specifically, the highest external quantum efficiency (EQE) of 7488% and the highest responsivity of 31.1 A W–1 under a bias of 10 V among IHP PDs with planar structure are achieved, which are almost 125-fold over the previous best results. Besides, the efficient charge extraction and transport also remarkably contribute to the fast response speed where a rise time of 16 μs is achieved, which is also superior to state-of-the-art IHP PDs. Furthermore, the composite films exhibit impressive flexibility due to the ultrathin 2D and 1D structural characteristic of perovskites and CNTs. By deploying the PD as a point-like detector, we acquire clear images. The results indicate the promising potentials of the perovskite/CNT composites for solution and ambient condition processed flexible devices, and this strategy is general for all kinds of perovskite optoelectronic devices including photodetectors, phototransistors, and even LEDs.
研究领域:
材料科学
·
光电技术
·
纳米科技
✓ 已验证
DOI
PubMed
高影响因子
ENZYME AND MICROBIAL TECHNOLOGY
·
2016
·
IF 2.624
Jian Qin Zhou,Ting He,Jian Wen Wang
Microbial transglutaminase (mTG) is widely utilized in the PEGylation of pharmaceutical proteins. mTG immobilization can be achieved via covalent bonding on solid supports. However, the catalytic efficiency of mTG immobilized on solid supports was significantly reduced by mass transfer limitation. To overcome this limitation, mTG was covalently immobilized on the thermo-responsive carboxylated poly( N -isopropylacrylamide) (pNIPAM). The pNIPAM-mTG conjugate exhibited reversibly solubility in aqueous solution with a low critical solution temperature (LCST) at 39 °C, i.e., it was insoluble above 39 °C and soluble below 39 °C. The pH dependence of the pNIPAM-mTG conjugate was similar with that of the native mTG. Upon conjugation to pNIPAM, the optimal temperature of mTG shifted down from 50–55 °C to 40–45 °C, and the thermal stability of the conjugate was elevated. The easy separation of the pNIPAM-mTG conjugate with its substrate and the catalytic efficiency of the pNIPAM-mTG conjugate were demonstrated by employing the pNIPAM-mTG conjugate to cross-link bovine serum albumin (BSA) and catalyze PEGylation of therapeutic protein, cytochrome c (Cyt C), respectively. The thermo-responsive mTG is suitable to modify proteins in food processing and biomedical engineering.
研究领域:
生物技术
·
生物化学
·
食品加工
·
生物医学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Laser & Photonics Reviews
·
2025
·
IF 10
Zexu Wang,Yuchao Wei,Chao Chen,Xiutao Yang,Laijiang Wei,Yanshuai Zhang,Yifei Xu,Jinling Xie,Silu Peng,Hongxi Zhou,Jiayue Han,He Yu,Jun Gou,Jun Wang
2D-based photothermoelectric (PTE) photodetectors have emerged as promising candidates for high-performance broadband detection, owing to their outstanding optoelectronic and thermal characteristics. However, the intrinsically poor light absorption and high thermal conductivity of 2D materials result in limited responsivity and sensitivity. The 2D/3D hybrid-dimensional heterostructure, featuring a lattice-mismatch-free interface, successfully integrates the superior electrical properties of 2D materials with the high light absorption and excellent sensitivity of 3D materials, providing a novel platform for developing high-performance optoelectronic devices. In this work, a 2D SnSe 2 /3D PbSe hybrid-dimensional van der Waals (vdWs) heterojunction is proposed, leveraging its distinct band alignment and efficient thermal management to effectively suppress the potential barrier while achieving enhanced PTE response, ultimately enabling a high-speed, broadband (500–4100 nm) photodetector. Specifically, the device demonstrates a high responsivity of 2343 V/W, an ultrafast response speed ≈60 µs, and an exceptional detectivity of ≈10 10 Jones under 780 nm illumination. Notably, it maintains a responsivity exceeding 60 V/W and a rapid response time of 54 µs even at 3500 nm. In summary, this study exploits a hybrid-dimensional polycrystalline vdWs heterostructure to introduce a novel strategy for designing high-performance, broadband photodetectors.
✓ 已验证
产品关联
DOI
高影响因子
OPTICS AND LASER TECHNOLOGY
·
2025
·
IF 5
Can Zhang,Hongyan Yin,Sui Mao,Dongyang Li,Hao Jing,Xuelei Cao,Peng Liu,Enze Li,Junwei Nan,Peter Strizhak,Linjun Huang,Jianguo Tang
Photodetectors play a crucial role in the field of optoelectronic communications and other information-related domains. Si as one of the most important materials for visible light detection, has its performance constrained by factors such as its low absorption coefficient, which limits the further enhancement of commercial photodetector performance. In this work, by employing a SnO 2 heterojunction, we have fabricated a MSM structured photodetector with a vertical PN space charge region. The photoelectrons generated in the space charge region can be accelerated onto the SnO 2 surface and achieve sensitive spectral response. By varying the thickness of SnO 2 , the thickness of the space charge layer in the detector is gradiently modulated. Together with the photo-induced potential from KPFM characterization, the key role of the space charge layer thickness is fully confirmed in performance modulation of devices. The device achieves a maximum responsivity of 0.65 A/W and a quantum efficiency of 94.6 %. More notably, the transient response of the device is below 20 ns, demonstrating the application potential of this structure in photodetectors.
研究领域:
半导体物理
·
光电子学
·
纳米材料
·
器件物理
·
固体电子学
✓ 已验证
产品关联
DOI
高影响因子
SENSORS
·
2024
·Vol. 24
·期 3
·787
·
IF 3.4
Yupeng Zhang,Ruiheng Zhou,Xinyan Liu,Zhengyu Bi,Shengping Ruan,Yan Ma,Xin Li,Caixia Liu,Yu Chen,Jingran Zhou
β-Ga2O3photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1−x)2O3(x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1−x)2O3can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3for high-performance MSM UV photodetectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Small
·
2021
·Vol. 17
·期 37
·2101674
·
IF 13.281
Xiaolei Deng,Ziliang Li,Hui Liu,Yijian Zhao,Lingxia Zheng,Xiaowei Shi,Liang Wang,Xiaosheng Fang,Huajun Zheng
In order to satisfy the growing requirements of wearable electronic devices, 1D fiber-shaped devices with outstanding sensitivity, flexibility, and stability are urgently needed. In this study, a novel inorganic-organic heterojunction fibrous photodetector (FPD) based on poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and highly ordered TiO 2 nanotube array is fabricated, which endows a high responsivity, large external quantum efficiency, and fast response speed at 3 V bias. To further ameliorate its performance in the self-powered mode, a facile acid treatment is adopted and the assembled H-PEDOT:PSS/TiO 2 FPD demonstrates outstanding self-powered properties with ≈3000% responsivity enhancement (161 mA W −1 at 0 V under 365 nm irradiation, photocurrent enhancement of ≈50 times) compared with the untreated device. It is found that the concentrated H 2 SO 4 post-treatment helps decrease the tube wall thickness of TiO 2 and partially removes the insulated PSS component in PEDOT:PSS, leading to enhanced conductivity and facilitated charge transportation, and thereby superb responsivity/photocurrent enhancement of self-powered H-PEDOT:PSS/TiO 2 FPD. This low-cost and high-performance self-powered FPD shows high potential for applications in wearable electronic devices.
研究领域:
材料科学
·
光电子学
·
纳米技术
·
柔性电子学
·
光电探测器
✓ 已验证
DOI
高影响因子
Photonics Research
·
2021
·Vol. 9
·期 5
·781-791
·
IF 7.08
Tengteng Li,Qingyan Li,Xin Tang,Zhiliang Chen,Yifan Li,Hongliang Zhao,Silei Wang,Xin Ding,Xin Ding,Yating Zhang,Jianquan Yao,Jianquan Yao
The preparation of high-quality perovskite films with optimal morphologies is important for achieving high-performance perovskite photodetectors (PPDs). An effective strategy to optimize the morphologies is to add antisolvents during the spin-coating steps. In this work, a novel environment-friendly antisolvent tert-amyl alcohol (TAA) is employed first to improve the quality of perovskite films, which can effectively regulate the formation of an intermediate phase staged in between a liquid precursor phase and a solid perovskite phase due to its moderate polarity and further promote the homogeneous nucleation and crystal growth, thus leading to the formation of high-quality perovskite films and enhanced photodetector performance. As a result, the responsivity of the PPD reaches 1.56 A/W under the illumination of 532 nm laser with the power density of 6.37 μW/cm2 at a bias voltage of −2 V, which is good responsivity for PPDs with the vertical structure and only CH3NH3PbI3 perovskite as the photosensitive material. The corresponding detectivity reaches 1.47×1012 Jones, while the linear dynamic range reaches 110 dB. These results demonstrate that our developed green antisolvent TAA has remarkable advantages for the fabrication of high-performance PPDs and can provide a reference for similar research work.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Yujie Yan,Qizhen Chen,Xiumei Wang,Yaqian Liu,Rengjian Yu,Changsong Gao,Huipeng Chen,Tailiang Guo
Organic phototransistors (OPTs) have attracted enormous attention because of their promising applications in sensing, communication, and imaging. Currently, most OPTs reported utilize field-effect transistors (FETs) with relative long channel length which usually has undesired amplification because of their inherent low transconductance originated from their low channel capacitance, limiting the further improvement of performance. Herein, a vertical channel hybrid electrochemical phototransistor with a nanoscale channel and large transconductance (VECPT) is invented for the first time to achieve ultrahigh photoresponsivity along with a fast response speed. Benefiting from the nanoscale channel length and large transconductance, the photo-generated carriers in channel can be efficiently dissociated, transported, and amplified into the enlarged photocurrent output. Therefore, the devices deliver substantially improved optoelectronic performances with a photoresponsivity as high as ≈2.99 × 107 A/W, detectivity of ≈1.49 × 1013 Jones, and fast-speed response of ≈73 μs under a low voltage of 1 V, which are superior to those of the reported OPTs based on FETs. Moreover, the in situ Kelvin probe microscopy is performed to characterize the surface potential of device systems for better elucidating the photosensing mechanism. Furthermore, taking advantage of its excellent optoelectronic performance, an ultraviolet light monitoring system is constructed by integrating VECPT with a light-emitting diode, which also shows the real-time, high-sensitive, and controllable photoresponse threshold properties. All these results demonstrate the great potential of these electrochemical phototransistors and provide valuable insights into the design of the nanoscale channel length device system for high-performance photodetection.
研究领域:
材料科学
·
电子工程
·
光电器件
✓ 已验证
DOI
PubMed
高影响因子
NANOTECHNOLOGY
·
2021
·Vol. 32
·期 22
·225204
·
IF 3.874
Yali Liu,Xiaoxiang Wu,Wenxuan Guo,Mengge Li,Xinyue Niu,Jiadong Yao,Ying Yu,Boran Xing,Xiaoyuan Yan,Shucheng Zhang,Jian Sha,Yewu Wang
Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A W−1 and a fast response time of 20 μs at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 1012 Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.
研究领域:
光电技术
·
材料科学
·
半导体器件
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Wen Li,Mingjin Dai,Yunxia Hu,Hongyu Chen,Xiaojun Zhu,Qingxin Yang,PingAn Hu
Although single ultra-high-performance indicators have been achieved based on two-dimensional (2D) semiconductors, the comprehensive performances of the photodetectors of them are not so desirable. The response speed and responsivity are two key figures of merit for photodetectors, while these two parameters are always mutually suppressive and can not be synchronously satisfied. Here, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In2Se3-based photodetectors by applying the mechanical strain and producing the piezoresistive effect, which can synergistically modulate the band structure and boost the overall photodetecting performances. Through studying the optoelectronic properties of In2Se3 photodetector under strain modulations, we found that the responsivity under 0.65% tensile strain is improved by almost 68.6% on average, while responsivity under 0.65% compressive strain is lowered by about 57.3% in the wavelength range of 200–1000 nm. More importantly, the response speed of the In2Se3-based photodetector under two different mechanical strains rises distinctly (from 244 to 214 and 180 μs, accordingly). The strain-engineering can accommodate the band structure and enhance the electric and optical properties of the semiconducting crystals, ultimately realizing high-performance photodetectors. The strategy proposed in this work for improving the performance of photodetectors provides a promising route to practical applications in next-generation optoelectronic devices.
研究领域:
光电子学
·
材料科学
·
纳米技术
·
半导体物理
✓ 已验证
DOI
高影响因子
COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING
·
2020
·
IF 6.444
Ao Zhong,Jinhui Li,Yu Zhang,Fan Zhang,Tao Wang,Guoping Zhang,Rong Sun,Ching-Ping Wong
The mechanical brittleness and structure collapse of three-dimensional (3D) graphene composite construction is still an enormous issue in flexible performance of complex. In addition, low temperature and efficient process become increasingly significant and noticeable in field of semiconductor device to prevent from huge resource waste and energy consumption. Herein, we report a special method to prepare 3D graphene/polyimide (rGO/PI) aerogel with low temperature and rapid procedure. The aerogel is synthesized by introducing water-soluble polyamic acid ionic salt (PAS) and ice-templating directional solidification to establish unique oriented structure, and by energy-efficient microwave to realize low temperature and rapid imidization. The preparative rGO/PI nanocomposite aerogels hold excellent electrical conductivity , desirable flexibility, superior pressure-responsive properties, remarkable compression sensitivity and durability, so that adapt to multifarious deformations with huge potential for flexible wearable devices .
研究领域:
材料科学
·
纳米技术
·
柔性电子
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）