Nanomaterials
·
2022
·Vol. 12
·期 15
·
IF 5.719
Asha Yadav,Bo Fu,Stephanie Nicole Bonvicini,Linh Quy Ly,Zhitai Jia,Yujun Shi
β-Ga2O3nanostructures, including nanowires (NWs), nanosheets (NSHs), and nanorods (NRs), were synthesized using thermally dewetted Au nanoparticles as catalyst in a chemical vapor deposition process. The morphology of the as-grownβ-Ga2O3nanostructures depends strongly on the growth temperature and time. Successful growth ofβ-Ga2O3NWs with lengths of 7–25 μm, NSHs, and NRs was achieved. It has been demonstrated that the vapor–liquid–solid mechanism governs the NW growth, and the vapor–solid mechanism occurs in the growth of NSHs and NRs. The X-ray diffraction analysis showed that the as-grown nanostructures were highly pure single-phaseβ-Ga2O3. The bandgap of theβ-Ga2O3nanostructures was determined to lie in the range of 4.68–4.74 eV. Characteristic Raman peaks were observed with a small blue and red shift, both of 1–3 cm−1, as compared with those from the bulk, indicating the presence of internal strain and defects in the as-grownβ-Ga2O3nanostructures. Strong photoluminescence emission in the UV-blue spectral region was obtained in theβ-Ga2O3nanostructures, regardless of their morphology. The UV (374–377 nm) emission is due to the intrinsic radiative recombination of self-trapped excitons present at the band edge. The strong blue (404–490 nm) emissions, consisting of five bands, are attributed to the presence of the complex defect states in the donor (VO) and acceptor (VGaor VGa–O). Theseβ-Ga2O3nanostructures are expected to have potential applications in optoelectronic devices such as tunable UV–Vis photodetectors.
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Journal of Physical Chemistry Letters
·
2025
·
IF 4.6
Ruan Zhang,Shuai Liu,Xianyu Hu,Yong Zhang,Yunlei Zhong,Qing Guo,Xiyuan Feng
In the post-Moore era, next-generation optoelectronics and neuromorphic computing systems require ultrawide bandgap semiconductors with tunable properties. β-Ga2O3 stands as a promising candidate, possessing a bandgap of 4.5–4.9 eV and a high critical electric field of ∼ 8 MV/cm. However, its practical application is hindered by difficulties in synthesizing high-quality 2D forms and optimizing metal–semiconductor contacts. In this study, highly crystalline ultrathin 2D β-Ga2O3 nanoflakes with improved interface quality and enhanced carrier transport dynamics were synthesized using a space-confined CVD approach. The nanoflakes exhibit excellent structural and crystalline quality, as evidenced by the characteristic peaks in Raman spectroscopy and XRD, along with the clear lattice structure observed via TEM. Metal–semiconductor–metal devices with Ti–Ti, Pd–Pd, and Ti–Pd electrode configurations were fabricated and evaluated through current–voltage and time-resolved current–time measurements. The results reveal that the Schottky barrier height at the metal–Ga2O3 interface plays a decisive role in device performance. Notably, the Ti–Ti device exhibited a distinctive two-stage photocurrent decay after light illumination ceased, attributed to defect-mediated trapping and release of photogenerated carriers. By incorporating this unique photoresponse behavior into a deep neural network, promising image recognition accuracy was achieved on the Modified National Institute of Standards and Technology data set. This work not only offers a reliable pathway for synthesizing high-quality 2D β-Ga2O3 but also demonstrates its potential for application in high-performance optoelectronics and neuromorphic computing.
研究领域:
光电子学
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材料科学
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纳米技术
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神经形态计算
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半导体器件
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高影响因子
Materials Today Physics
·
2025
·
IF 9.7
Mingliu Li,Hongbin Wang,Shuo Yang,Lin Yang,Peng Li,Jiangang Ma,Yichun Liu
High sensitivity and fast response dual-band photodetectors (PDs) covering the deep-ultraviolet (DUV) to visible spectrum are highly desired for industrial and scientific applications. Herein, a sandwich-architecture PD covering the range from DUV to visible was prepared by stacking a β -Ga 2 O 3 DUV absorbing layer, interdigitated Au electrodes, and a Cs 2 AgBiBr 6 (CABB) visible absorbing layer. At 5 V bias voltage, the sandwich-architecture PD achieves responsivities of 37.74 mA/W at 240 nm and 0.07 mA/W at 450 nm with microsecond response time, respectively, which is superior to the PDs using monolayer β -Ga 2 O 3 or CABB. Furthermore, it demonstrates self-powered dual-band detection capability with maximum responsivity of 8.13 mA/W. Enhanced performance arises from two synergistic mechanisms: a vertical built-in electric field at the β -Ga 2 O 3 /CABB interface spatially separates photogenerated carriers, while a higher hole mobility in CABB facilitates the charge collection under a lateral bias field between Au electrodes. Importantly, the β -Ga 2 O 3 /Au/CABB PD demonstrates high-resolution images under 240 nm and 450 nm illumination. This work provides a route for developing high-performance DUV-visible dual-band photodetectors, highlighting their potential for advanced multispectral imaging applications.
研究领域:
光电子学
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光电探测器
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半导体材料
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异质结器件
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多光谱成像
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JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2018
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IF 5.091
Jin Liu,Wei Lu,Qian Zhong,Hongzhang Wu,Yunlin Li,Lili Li,Zhenling Wang
Semiconductor photocatalysis has become the focus of recent research on antibiotic treatment because it is a green and efficient technology. In this study, α-GaOOH with several novel microstructures has been synthesized at a low temperature and its subsequent thermal transformation. The influence of pH on the synthesis of α-GaOOH is studied, and the results indicate that pH played an important role in the microstructures of α-GaOOH and β-Ga 2 O 3 . All Ga 2 O 3 samples possess macro-mesoporous network structures and exhibits a remarkable photocatalytic activity for antibiotic degradation. The photoelectron chemical tests show that the separation efficiency of photogenerated charge carriers of Ga 2 O 3 -7.0 is higher than that of other Ga 2 O 3 . The enhanced photocatalytic activity of Ga 2 O 3 -7.0 is mainly ascribed to its morphology and oxygen vacancy . The active species trapping and photoluminescence measurement experiments indicate that OH and O 2 − are the major active species contributing to the photocatalytic process. This study will bring about the potential application in treatment of the antibiotic pollutants.
研究领域:
材料科学
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环境科学
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半导体光催化
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2026
·Vol. 37
·期 26
·2069
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IF 3.2
Cheng Yi,Liu Tianshuo,Sun Nan,Wang Wenqian,Zhu Fanghao,Guan Yi,Gao Min
β-Ga 2 O 3 material with wide band gap and high radiation resistance, is potential in the application of X-ray radiation detections, and UV photoelectric detectors. The detector properties, such as sensitivity, response speed and stability, strong depend on the crystal quality of β-Ga 2 O 3 material. In this paper, β-Ga 2 O 3 thin films composed of crystalline grains were fabricated on sapphire substrates using the chemical vapor deposition technique. The thin films underwent annealing treatment in oxygen and a mixed ambient (5% H 2 +95% Ar), respectively. The effects of annealing on the structural, surface morphological and optical properties were investigated. X-ray photoelectron spectroscopy indicated the oxygen vacancy concentration decreased after annealing treatment. Overall, the β-Ga 2 O 3 thin films annealed in the hydrogen ambient displayed the best recrystallization characteristics, the process was discussed. The role of hydrogen quietly differed to oxygen during the annealing treatment, hydrogen promoted the decomposition of β-Ga 2 O 3 grains, followed by regrowth of β-Ga 2 O 3 with a preferred orientation, where decomposition and regrowth occurred competitively. The crystalline grains presented a gradual increase in size from as-grown to O 2 -annealed and H 2 -annealed β-Ga 2 O 3 thin films. Meanwhile, the grains annealed in hydrogen displayed a distinct alignment. The epitaxial relationships between the β-Ga 2 O 3 thin films and the sapphire substrate were investigated. Photoluminescence and absorption spectra were measured, the emission peaks fitted by Gaussian functions, and the deduced optical bandgap indicated the influence of the annealing treatment on the recrystallization of β-Ga 2 O 3 .
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ACS Applied Nano Materials
·
2024
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IF 5.3
Renjie Jin,Jinsong Liu,Shiwei Chen,Hongde Wang,Changsheng Niu,Xuehua Zhang,Chao Wu,Haizheng Hu,Kai Chen,Daoyou Guo,Shunli Wang
Solar-blind ultraviolet (UV) photodetectors play a critical role in ultraviolet communication and monitoring, effectively reducing false alarm rates and improving the accuracy of detection systems across various settings, which has garnered significant attention. Due to its exceptional solar-blind photon absorption coefficient, extremely stable structure, and ultrawide bandgap (4.5–4.9 eV), Ga2O3 has recently been identified as a desirable material for solar-blind UV photodetectors. Heterojunctions can separate photogenerated electron–hole pairs and their absorption edges can be controlled by selecting semiconductors with appropriate bandgaps, making them an important technology for light detection. In this work, a self-powered solar-blind UV photodetector has been fabricated using a mechanically separated β-Ga2O3/Lu2O3 core–shell microwire heterostructure. Our device demonstrates excellent solar-blind UV discriminability with self-powered photodetection, the device exhibits a responsivity of 38.8 mA/W, a detectivity of 1.22 × 1012 Jones, a switching ratio of 1.43 × 103, and a decay rate under UV irradiation of 62 ms, benefiting from both photovoltaic and photoconductive effects. Due to the high dielectric constant of Lu2O3 thin films at the nanoscale, enables more effective modulation of internal electric fields within heterojunction structures, thereby enhancing the response speed and sensitivity of photodetectors. The application of self-powered photodetectors in solar-blind communication systems has achieved promising results, which provides a viable strategy for Ga2O3-based high-performance self-powered photodetectors.
研究领域:
光电子学
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半导体材料
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光电探测器
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紫外通信
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纳米材料
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Journal of Materials Chemistry C
·
2025
·
IF 5.1
Yujie Wang,Yurui Han,Yuefei Wang,Youheng Song,Shihao Fu,Chong Gao,Bingsheng Li,Aidong Shen,Yichun Liu
In this study, a PEDOT:PSS@graphene composite structure was engineered by incorporating graphene into PEDOT:PSS, thereby significantly enhancing its electrical conductivity. This composite layer was subsequently integrated with high-crystallinity β-Ga2O3 microwires (MWs), synthesized via chemical vapor deposition (CVD), to fabricate a self-powered deep-ultraviolet (DUV) photodetector. The device exhibited an ultra-low dark current of only 0.13 pA under a bias of 10 V, highlighting its superior noise suppression capability. More importantly, under 245 nm illumination at a bias of 0 V, the photodetector demonstrated a remarkable responsivity of 65 mA W−1, which represents enhancements by factors of 48 and 4 compared with PEDOT:PSS/β-Ga2O3 MW and graphene/β-Ga2O3 MW heterostructures, respectively. In addition, the device achieved a high specific detectivity of ∼1012 Jones. These outstanding photoresponse characteristics can be primarily attributed to the incorporation of graphene, which improves the conductivity of the PEDOT:PSS layer while simultaneously strengthening the built-in electric field at the heterojunction interface, thereby facilitating more efficient separation and transport of photogenerated carriers. Overall, this work demonstrates a promising strategy for designing organic–inorganic hybrid heterostructures and offers new insights into the development of high-performance, self-driven solar-blind photodetectors.
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CERAMICS INTERNATIONAL
·
2026
·
IF 6
Ying Peng,Xinyi Tang,Yuhuan Tan,Dequan Liu,Pengyan Fu,Jilin Zhang,Shixun Lian,Wenli Zhou
Heterovalent Ca 2+ -Si 4+ co-substitution tunes local coordination of Cr 3+ . • Double NIR luminescence without altering Cr 3+ average crystal field. • Optimized phosphor achieves greatly improved absorption and quantum efficiency. • High-brightness pc-NIR-LED is fabricated for imaging and plant lighting. Cr 3+ -doped near-infrared (NIR) phosphors are highly desirable for NIR illumination, biological detection and auxiliary imaging. Herein, we propose a heterovalent Ca 2+ -Si 4+ co-substitution strategy to replace Ga 3+ sites in β -Ga 2 O 3 :Cr 3+ . This approach precisely tailors the local coordination and defect structures surrounding Cr 3+ , leading to remarkable enhancement in NIR luminescence. Characterizations demonstrate that Ca 2+ -Si 4+ co-substitution barely changes the average crystal field of Cr 3+ , but introduces local lattice distortion and reduces coordination symmetry. Such local structure engineering relaxes the d-d transition selection rules of Cr 3+ , thereby enhancing the absorption of the 4 A 2g → 4 T 1g and 4 T 2g transitions and strengthen the broadband NIR emission from the 4 T 2g → 4 A 2g transition. For the optimal Ga 1.81 Ca 0.08 Si 0.08 O 3 :0.03Cr 3+ phosphor, the NIR emission intensity is approximately two times higher relative to pristine β -Ga 2 O 3 :Cr 3+ . Its internal quantum efficiency increases from 81.8% to 88.6%, and absorption efficiency rises from 10.9% to 30.6%. A comparative study on various M A 2+ –M B 4+ ion pairs (M A = Mg, Ca, Sr, Ba; M B = Si, Ge, Sn) verifies that Ca 2+ -Si 4+ yields the strongest luminescence enhancement for β -Ga 2 O 3 :Cr 3+ . Moreover, this universal strategy also improves blue light absorption and NIR emission of MgGa 2 O 4 :Cr 3+ and LiGa 5 O 8 :Cr 3+ . The assembled phosphor-converted NIR light-emitting diode achieves a NIR output power of 107.9 mW at 400 mA and a photoelectric conversion efficiency of 14.8% at 40 mA. The as-prepared phosphors possess promising practical values for NIR imaging and plant lighting. Download: Download high-res image (288KB) Download: Download full-size image
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JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Ao Ye,Yaru Wang,Luwei Feng,Xiaozhan Yang,Wenlin Feng
To address the low carrier separation efficiency and insufficient response of pristine β-Ga 2 O 3 -based solar-blind ultraviolet photodetectors, a low-cost, non-vacuum heterostructure strategy was proposed. β-Ga 2 O 3 thin films were prepared by mist chemical vapor deposition, and ZnO layers were deposited via successive ionic layer adsorption and reaction to construct an Au/β-Ga 2 O 3 /ZnO/Au heterojunction photodetector. Material characterization verified a clean heterointerface without impurity phases, and the built-in electric field significantly promoted carrier separation. Under 254 nm illumination at 40 V bias, the device delivers a photocurrent of 3.94 μA, 20 times higher than the pristine β-Ga 2 O 3 detector. The responsivity reaches 10.98 A/W, detectivity is 3.69×10 12 Jones, and external quantum efficiency is up to 5.36×10 3 %, enhanced by 20, 19, and 23 times respectively, with markedly improved rise speed and stable switching response. Moreover, the device shows a good linear relationship (R 2 =0.98115) between photocurrent response and bovine serum albumin concentration, enabling highly sensitive protein detection. This work provides a low-cost route for high-performance β-Ga 2 O 3 solar-blind photodetectors and extends their application to rapid, non-destructive UV biosensing.
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JOURNAL OF CRYSTAL GROWTH
·
2025
·
IF 2
Biao Meng,Changshuai Yin,Taiqiao Liu,Yao Lu,Yujie Yan,Yang Cao,Hao Fu,Gai Wu,Kang Liang,Sheng Liu,Zhaofu Zhang
Co-designed optimization and analysis of thermal field structure and defect formation for high quality β -Ga 2 O 3 single crystal with ultra-wide bandgap has been systematically investigated via edge-defined film-fed growth technique and numerical simulation. To confirm the wafer-scale quality, a collaborative verification scheme is developed at both microscopic and macroscopic scales. The narrow full width at half-maximum (139.82 arcsec) and low average defect density (5.5 × 10 4 cm −2 ) highlight the high quality of the bulk crystal. The overall low defect density in the crystal is confirmed through rotated electron spin resonance owing to the appearance of angle-independent single peak. The dopant of Zr is verified as the main impurity and the role of Zr, an effective n-type dopant, is investigated by first principles calculation. Moreover, the microscopic mechanism of defect formation is interpreted as atomic arrangement disorder and lattice distortion. This study presents novel proposals and strategies for the advanced improvement and optimization of β -Ga 2 O 3 single crystal growth and defect characterization.
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Journal of Physical Chemistry Letters
·
2019
·
IF 7.329
Hebin Wang,Hongyu Chen,Li Li,Yuefei Wang,Longxing Su,Wanpeng Bian,Bingsheng Li,Xiaosheng Fang
A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p–n junction. Owing to the high crystallized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cutoff wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm/R280 nm) of 103, which is two orders of magnitude larger than the average value reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow bandpass response of only 17 nm in width. This work might be of great value in developing a high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
研究领域:
光电子学
·
半导体器件
·
紫外探测
·
材料科学
·
光电探测器
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