MATERIALS & DESIGN
·
2022
·
IF 9.417
Zhiliang Chen,Yating Zhang,Yu Yu,Yifan Li,Qingyan Li,Tengteng Li,Hongliang Zhao,Zhongyang Li,Pibin Bing,Jianquan Yao
Resistive random-access memory (RRAM) is a new memory technology that can not only realize high-density storage, but also can simulate the neural synapse for use in artificial intelligence applications. In this study, we propose an RRAM device that shows competitive resistive memory characteristics and can similarly be used as a synapse in simulation of the human visual perception nervous system. First, we demonstrate that the polyvinyl alcohol-graphene oxide (PVA@GO) hybrid material-based RRAM device offers competitive resistive memory characteristics, including long retention capability, high durability, repeatability, and mechanical flexibility. Second, we integrate the RRAM (as the artificial synapse) with a light-sensitive electronic component (a photoreceptor cell) to construct an artificial visual perception system, and realize effective emulation of light perception and conversion of light signals into synaptic signals. Under light irradiation at 532 nm, a range of versatile synaptic functions, including short-term plasticity (STP), long-term plasticity (LTP), and paired pulse facilitation (PPF), was imitated. This work provides valuable insight into the development path for next-generation high-density data storage technology, and also offers a new way to imitate the human visual neural network for multi-functional humanoid robots.
研究领域:
神经科学
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材料科学
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人工智能
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 17
·5749-5757
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IF 7.393
Jiankui Zhou,Hanfang Feng,Yadong Wang,Qingqing Sun,Yingliang Liu,Xuying Liu,Li Zhang,Shaokui Cao
Random resistive access memory (RRAM) devices with a simple structure, low power consumption, and tunable switching behavior have emerged as promising candidates to simulate biological synapses. Here, we demonstrate solution-processable RRAM devices with FeC–rGO nanocomposites by intercalating nano-aggregating ferrocenes (FeCs) between the reduced graphene oxide (rGO) sheets, in which FeCs anchor on the surface of rGO through π–π stacking interactions. The Al/FeC–rGO/ITO devices fabricated by spin-coating exhibit a low SET/RESET voltage of −1.7 V/+2.1 V and a high ON/OFF ratio of 108, which results from the formation/rupture of conductive paths between rGO sheets gated by the redox of FeCs. Besides, the devices show high repeatability, excellent durability and favorable flexibility. In addition, the obtained device can be utilized to simulate the potentiation and depression of synapses by applying a pulse voltage below VSET, further contributing to image pattern recognition. Thus, this approach aims to fabricate information storage devices for future use in artificial intelligence.
研究领域:
材料科学
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神经形态计算
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电子工程
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2022
·Vol. 8
·期 7
·2101402
·
IF 7.633
Rongxue Ji,Guangdi Feng,Chunli Jiang,Bobo Tian,Chunhua Luo,Hechun Lin,Xiaodong Tang,Hui Peng,Chun-Gang Duan
Optoelectronic synapses integrating synaptic and sensing functions have great potential in visual information processing and neuromorphic computing. Here, an artificial optoelectronic synapse based on copper-phthalocyanine (CuPc) and poly(vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) is reported. The fabricated two-terminal device exhibits bidirectional responses to light pulses with different wavelengths, which endows the device the capability to implement both excitatory and inhibitory synaptic behaviors in an optical pathway. The introduction of P(VDF-TrFE) greatly improves the performance of the device as an artificial synapse, because the ferroelectric polarization of P(VDF-TrFE) can control the relaxation behavior of the device. After mimicking some basic functions of biological synapses, the device is successfully applied to simulate the action and relaxation process of nociceptors when suffering from external harmful stimuli.
研究领域:
生物医学工程
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材料科学
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神经科学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Yafei Chen,Lingling Zhang,Shuaifei Mao,Zhenyu Li,Chunli Jiang,Chunhua Luo,Hechun Lin,Hui Peng,Chun-Gang Duan
The rapid advancement of artificial intelligence (AI) demands faster processing units and more efficient algorithms. This study introduces a neuromorphic visual system based on a single-layer ferroelectric semiconductor material, specifically the [R-1-(4-chlorophenyl)ethylammonium]2PbI4 (R-LIPF) organic–inorganic perovskite ferroelectric layer, integrated into a reservoir computing (RC) system for digital image recognition. The R-LIPF device demonstrates tunable synaptic functions, including short-term plasticity (STP), paired-pulse facilitation (PPF), and long-term plasticity (LTP) under optical stimulation. By pre-applying voltage, we successfully modulated the polarization state of the R-LIPF layer, enabling control over synaptic relaxation behavior. Unlike traditional ferroelectric oxide semiconductor photon synapses, the R-LIPF-based device offers enhanced functionality and simplified device architecture. This research paves the way for highly efficient neuromorphic computing hardware, with potential applications in energy-efficient machine vision systems.
研究领域:
材料科学
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计算机科学
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人工智能
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 17
·5706-5712
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IF 7.393
Jie Lao,Wen Xu,Chunli Jiang,Ni Zhong,Bobo Tian,Hechun Lin,Chunhua Luo,Jadranka Travas-sejdic,Hui Peng,Chun-Gang Duan
Halide perovskites (HPs) are promising materials for preparing nonvolatile memory and artificial synapse devices. However, the instability and toxicity of lead HPs seriously restrict their further application. Herein, a lead-free and air-stable Ag/polymethylmethacrylate (PMMA)/Cs2AgBiBr6/ITO device is fabricated, which exhibits typical resistive switching (RS) characteristics and synaptic behaviors, including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF) and spike-dependent plasticity. The ion migration of Br− and Ag+ in Cs2AgBiBr6 led to the formation and fracture of a conductive filament. Notably, no obvious decay in the device performance was observed after being directly exposed to the ambient environment for 20 days, indicating that the device exhibits good environmental stability. Furthermore, the recognition rate reaches 91.3% by using the MNIST handwritten data set. This air-stable and lead-free device provides a new candidate for the next generation of neuromorphic computation based on halide perovskites.
研究领域:
材料科学
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神经科学
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电子工程
✓ 已验证
产品关联
DOI
高影响因子
Materials Advances
·
2022
·Vol. 3
·期 19
·7248-7256
·
IF 0
Haibo Ye,Zhiyong Liu,Hangdi Han,Tielin Shi,Guanglan Liao
Organometal halide perovskites (OHPs) exhibit great potential in memristors and artificial synaptic devices. However, the toxicity of lead and instability set barriers for further applications in neuromorphic computing. Herein, we demonstrate an artificial synapse based on inorganic lead-free AgBiI4 perovskites, which exhibits typical analog resistive switching (RS) characteristics and synaptic behaviors. Several functions of biological synapses are realized including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP). Furthermore, by integrating a tactile sensor array with a AgBiI4 synaptic device, an artificial sensory neuron system is demonstrated. Under pressure stimulations with various intensities, an electrical pre-synaptic signal is transferred to artificial synapses for further information preprocessing, realizing the capability of contrast enhancement and noise reduction. After information preprocessing with an artificial sensory neuron system, the recognition accuracy reaches up to almost 100% with only 500 training epochs by using the MNIST handwritten data set. The presented work provides a new candidate for the next generation of neuromorphic computation based on lead free perovskites.
研究领域:
神经形态计算
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材料科学
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电子工程
✓ 已验证
产品关联
DOI
ADVANCED FUNCTIONAL MATERIALS
·
2024
·
IF 18.5
Bo He,Gang He,Can Fu,Shanshan Jiang,Elvira Fortunato,Rodrigo Martins,Shouguo Wang
Exploitation of low-dimensional metal-oxide semiconductor nanowires (MOS NWs) with peculiar and radial coaxial architectures is of great significance for constructing nanoscale, high-performance, multi-module integrable functional electronic products. Here, highly ordered In 2 O 3 @ZnO coaxial NW arrays (CNWA) using a simple and economical electrospinning technique are synthesized and assembled into field-effect transistors (FETs). Featuring strong carrier effusion efficiency at the In 2 O 3 @ZnO circular heterogeneous interface, the field effect mobility (ε FE ) gets an intrinsic improvement and can reach as high as 202.3 cm 2 V ‒1 s ‒1 for high -k -based CNWA FETs, which exceeds the performance of oxide-based FETs devices reported by far. Furthermore, the unique structural advantages endowing In 2 O 3 @ZnO CNWA FETs with excellent optoelectronic coupling capabilities are identified, for which further optoelectronic detection and artificial photonic synaptic devices are constructed and functional simulations are implemented. This work offers new insights in designing optoelectronics and artificial synapses to process and recognize information for neuromorphic computing and artificial intelligence applications.
研究领域:
纳米材料科学
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电子工程
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人工智能
✓ 已验证
产品关联
DOI
高影响因子
ORGANIC ELECTRONICS
·
2025
·
IF 2.6
Zimu Li,Chunli Jiang,Chunhua Luo,Hechun Lin,Xiaodong Tang,Hui Peng
To address the challenges posed by the rapid development of artificial intelligence and big data, various artificial synaptic devices have been developed to overcome the limitations of traditional computing systems. In this study, a two-terminal device using a conducting polymer, poly(hexylthiophene) (P3HT), and a molecular ferroelectric, diisopropylammonium bromide (DIPAB), is fabricated. The incorporation of the ferroelectric layer not only establishes an energy barrier for charge carriers generated by light pulses in the P3HT layer but also allows the device's response to be modulated by altering the ferroelectric polarization state of DIPAB. This device successfully simulates some basic biological synaptic functions by modulating light stimuli. Furthermore, the light logic functions of “AND” and “OR” are realized by using light pulses with different wavelengths, as well as the simulation of associative learning. The device is used to recognize MNIST handwritten digits based on a convolutional neural network (CNN), achieving a recognition accuracy of over 90 %. These results highlight the device's potential for neuromorphic computing.
研究领域:
材料科学
·
神经科学
·
计算机科学
✓ 已验证
产品关联
DOI
高影响因子
SmartMat
·
2025
·Vol. 6
·期 4
·e70025
·
IF 12.8
Lulu Wang,Xiaodong Yin,Haifeng Cheng,Chuan Liu,Songjia Han,Wei Xie,Chen Chen
Organic electrochemical transistors (OECTs) have garnered significant attention as artificial synapses due to their ability to emulate synaptic functionalities. While previous research has predominantly focused on modulating the physical properties of the channel materials to enhance synaptic performance, the role of ion dynamics in influencing device characteristics remains underexplored. Effective regulation of ion dynamics is crucial for improving state retention and achieving long-term plasticity (LTP) in these devices. In this study, we propose a strategy to modulate the interactions between polymer semiconductors and ions in solid-electrolyte-based artificial synapses. Our findings indicate that the interplay between semiconductors and doping counterions significantly influences ion transport dynamics, thereby affecting the electrochemical doping and dedoping processes in OECTs. Notably, by suppressing the dedoping process, we achieved enhanced synaptic performances, with devices retaining 64% of the peak current after a retention time of 1000 s. Through the judicious selection of anions and optimization of their interactions with polymer semiconductors, we effectively controlled the dedoping process in OECTs, leading to improved state retention. These insights provide a novel perspective on tuning ion-polymer semiconductor interactions for the development of high-performance synaptic devices, advancing neuromorphic computing applications.
研究领域:
生物电子学
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神经形态计算
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Electronic Materials
·
2022
·Vol. 8
·期 9
·2200319
·
IF 7.633
Zhiguo Jiang,Weikun Wen,Zhijian Zhong,Liping Xia,Fangliang Gao,Yong Zhang,Jiang Wu,Said Nasir Khisro,Aiyun Zha,Qingbin Zha,Xinman Chen
Intrigued by the artificial intelligence and brain-like neural networks, the photoelectronic neuromorphic devices that can simulate synaptic functions have been attracting wide attention. However, equalizing excitation-inhibition has been seldom artificially realized despite its fundamental feature in a biological system. In this work, an artificial synapse is proposed based on a sandwiched Ag/Al 2 O 3 /graphene/ITO photodetector. The device exhibits a special ambipolar photoresponse at the millivoltage as a result of the interfacial trapping effects. Under the coupled light and electrical stimulus, the synaptic excitatory, inhibitory signals and their recovery are emulated on a single device via the positive and negative photoresponse, respectively. Further, the biologically dynamic balance of excitation and inhibition is reproduced on a simple analogous system integrating multiple photoelectronic synaptic cells. These remarkable results provide a potential foundation for building hardware units with neuromorphic architecture to mimic the complex human brain functionalities.
研究领域:
神经科学
·
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2023
·Vol. 11
·期 21
·7098-7105
·
IF 6.4
Lingyan Zheng,Ruifu Zhou,Shuwen Xin,Haofei Cong,Yuanbin Qin,Peilong Xu,Xuhai Liu,Fengyun Wang
Via the low-cost electrospinning technique, we demonstrate artificial synaptic transistors made of multi-cation indium zinc tin oxide (IZTO) nanowires. By adjusting the ratio of indium ions in IZTO, we found that the IZTO-6 based optical synaptic devices exhibited excellent optical response when the ratio is 6 : 1 : 2. Importantly, we have obtained improved long-memory retention for up to approximately three hours. After decaying for approximately three hours, the recorded excitatory postsynaptic current (EPSC) can account for around 50% of the EPSC peak. Furthermore, Al/IZTO-6/Ni optical synaptic devices with asymmetric metal contact structures and large work function differences can simulate biological synapses without VDS biasing, suggesting the self-powering capability of MOS based synapses for future low energy-consumption building blocks of in-memory computing systems.
研究领域:
神经形态工程
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材料科学
·
电子器件
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Xiaojie Chai,Zeyu Yan,Miaoru Wang,Jun Jiang,Dingding Suo,Yan Liu,Jianlong Ji,Shengbo Sang
Memristors has been considered as a promising candidate for synaptic devices in next-generation neuromorphic computing. The two-dimensional MXene attracts considerable interest for use in memristor devices owing to its excellent physicochemical properties. However, MXene-based devices still suffer from unsteady conductive filaments and significant degradation. In this work, we present a highly-robust multilevel resistive switching memristor based Ti 3 C 2 T x by alkalization synthesis process and incorporate doped Ag nanoparticles into the active layer. This memristor exhibits a significant improvement in the uniformity of device parameters, including low threshold voltages, high switching ratio, high endurance, and long data retention compared to conventional memristors. The Ag nanoparticles embedded in oxidized Ti 3 C 2 T x renders a reduced variability in threshold voltages from 33 % to 8 %. Additionally, a remarkable accuracy (∼92.69 %) is achieved on the handwritten digits dataset by constructing an artificial neural network based on a memristor array. Overall, the proposed effective strategy could advance the performance of future manufactured MXene-based memristors.
研究领域:
纳米技术
·
材料科学
·
神经形态工程
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电子器件
·
人工智能
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）