SOLID STATE SCIENCES
·
2024
·
IF 3.4
Kaiwu Fu,Dandan Ma,Nan Zhang,Jiacheng Cao,Xiaonan Chen,Min Zhu,Peiqing La
Oxide thermoelectric materials have a wide range of applications due to their excellent stability, low cost, and non-toxic properties. However, their low thermoelectric conversion efficiency limits their practical use. Therefore, improving the performance of oxide thermoelectric materials has become the focus of current research. Interface engineering is an important approach to enhance thermoelectric properties by optimizing electrical transport properties through multiphase composite regulation of phase interface structure. A series of Sr 0.6 La 0.4 Nb 2 O 6-δ /x wt% graphite (x = 0, 0.6, 1.0, 1.5, 2.0) composite ceramics thermoelectric materials were prepared, and the mechanism for improving their thermoelectric properties was explored. Graphite serves as an electron momentum amplifier within the Sr 0.6 Ba 0.4 Nb 2 O 6-δ matrix, thereby augmenting both conductivity and power factor values significantly. Notably, the incorporation of 1.5 wt% graphite led to a remarkable enhancement in the thermoelectric power factor at 1073 K, reaching an impressive value of 254.84 μW/K 2 m - representing a notable increase of approximately 51 % compared to the unmodified sample - primarily attributed to the elevated electrical conductivity .
研究领域:
材料科学
·
无机非金属材料
·
热电转换
·
固态物理
·
功能陶瓷
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2017
·Vol. 52
·期 19
·11569-11579
·
IF 2.599
Lan Jin-Le,Ma Wenqiang,Deng Chengjie,Ren Guang-Kun,Lin Yuan-Hua,Yang Xiaoping
A series of K-doped Bi 1− x
K
x
CuSeO (0 ≤ x ≤ 0.10) compounds were prepared by combustion synthesis combined with spark plasma sintering method. Phase composition and microstructure analysis indicate almost single BiCuSeO phase in low doping level, while phase separation appears in heavy doping level. The thermoelectric properties of the Bi 1− x
K
x
CuSeO compounds have been measured in the temperature range of 323–823 K. The electrical conductivity is greatly enhanced by almost three times from 8.70 to 26.2 S/cm at 323 K by the substitution of Bi with K due to the large decrease of the activation energy. The overall thermal conductivity decreases significantly due to the strong point defect scattering by K doping and possibly enhanced interface scattering on the secondary phase. The maximum ZT reaches 0.6 at 823 K for the sample of x = 0.02, which is about 50% higher than that of the pristine sample. Our work offers a fast and more efficient approach for the fabrication of BiCuSeO-based materials.
研究领域:
材料科学
·
无机非金属材料
·
热电材料
·
固态化学
·
纳米复合材料
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·Vol. 51
·期 8
·10774-10782
·
IF 5.1
Jitao Yi,Xinyue Zhang,Shanliang Chen,Ting Sun,Qinghui Jiang,Yong Liu
BiCuSeO-based materials show great promise for thermoelectric generators in waste heat recovery due to their excellent thermoelectric properties. However, the limited focus on device development has hindered their industrial-scale implementation. Here, high-performance BiCuSeO-based compounds with exceptional thermal stability were synthesized and remained stable aging for 400 h, making them suitable for investigation in the device bonding process. The BiCu80AgP is identified as the optimal solder from eight candidates, effectively connecting the copper (Cu) electrode with BiCuSeO-based compounds. The optimized bonding process substantially resulted in an impressive interfacial shear strength of about 15 MPa and reduced interfacial resistance to 2.2 mΩ cm 2 . Interface analysis revealed the formation of diverse, complex compounds, with variations in their concentrations greatly affecting joint performance. Achieving a uniform distribution of these compounds effectively mitigated thermal expansion mismatches and extended joint longevity by a factor of 6.6. This research proposes a novel fabrication method for BiCuSeO-based thermoelectric devices utilizing BCu80AgP solder, providing a foundation for future advancements in this field.
研究领域:
材料科学
·
热电转换
·
固态物理
·
能源材料
·
界面工程
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Yuqing Sun,Adeel Abbas,Hongxiang Wang,Chang Tan,Zhihao Li,Yujie Zong,Hui Sun,Chunlei Wang,Hongchao Wang
Quaternary Cu 2 MnSnSe 4 alloys with low intrinsic thermal conductivity are identified as promising middle-temperature thermoelectric materials. However, zT is depressed by the poor electrical performance. To overcome this issue, here, a series of Cu 2.1 Mn 0.9 SnSe 4 samples are prepared by ball-milling method which appears as a time-saving technique and lattice strain variation is observed by changing the annealing time ( x = 0, 1, 2, 3, 4 days). The vacancy defects concentration of Cu, with lowest vacancy defects formation energy, is changed with the competition between compression and tension-strain state, consistent with the first principles calculations, which optimizes the carrier transport. As a result, about 4 times increment of the carrier mobility is found. Moreover, the lattice strain of several nanometers is observed with TEM analysis, which scatters phonon strongly. A lowest κ L value of 0.57 W m −1 K −1 at 673 K is obtained for x = 3 sample, which is close to the amorphous limit. The interactive effect of enhanced mobility and strong scattering of phonons, contributing to a record zT ∼ 0.48 at 673 K for x = 3 sample. Lattice strain engineering is an effective tactic to simultaneously optimize the electrical and thermal transport.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
能源材料
·
半导体物理
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2018
·Vol. 6
·期 16
·6772-6779
·
IF 9.931
Fan Chen,Ruiheng Liu,Zheng Yao,Yunfei Xing,Shengqiang Bai,Lidong Chen
Skutterudite-based thermoelectric materials have great potential for use in waste heat recovery, but the conventional melting–quench–annealing process is not suitable for large-scale fabrication. In this study, we developed a rapid fabrication technique that combines scanning laser melting and spark plasma sintering to synthesize bulk n-type and p-type filled skutterudites. The kinetics process and microstructure evolution during the scanning laser melting and annealing were systematically investigated. Due to fast solidification in scanning laser melting, the peritectic segregation size of precursor resultants is confined to several microns, which leads to great shortening of the fabrication period of filled skutterudites. The as-synthesized n-type and p-type filled skutterudites achieve excellent dimensionless figures of merit: ZT ∼ 1.23 at 850 K for Yb0.4Co4Sb12.1; ZT ∼ 1.09 at 700 K for In0.5Co4Sb12.1; ZT ∼ 0.79 at 750 K for Ce0.95Fe3CoSb12.1, which are among the highest values of single filled skutterudites. The shortened processing period and enhanced thermoelectric performance make this novel synthesis method suitable for industrial-level large-scale fabrication of skutterudite-based thermoelectric materials.
研究领域:
材料科学
·
热电材料
·
金属学与冶金工程
·
固态物理
·
先进制造技术
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2024
·Vol. 12
·期 15
·8893-8899
·
IF 10.7
Ziming Zhang,Zhiqiang Gao,Tingting Deng,Qingfeng Song,Lidong Chen,Shengqiang Bai
Mg3(Sb,Bi)2-based Zintl compounds have attracted lots of attention due to their high thermoelectric performance and good mechanical properties. However, thermally activated mobility, which is ascribed to the grain boundary scattering, greatly limits their practical use. In this work, we reveal the plasticity of Mg3(Sb,Bi)2-based compounds in the compressive strength test. The ab initio analysis indicates that this plasticity should be ascribed to the low slip barrier energy (∼580 mJ m−2), which is only one third of the cleavage energy (∼1600 mJ m−2). Based on this finding, we propose a cold-deformation procedure to elongate particles and to enhance texture, which successfully suppresses the grain boundary scattering. As a result, a high carrier mobility of 86.6 cm2 V−1 s−1 and a high power factor of 16.2 μW cm−1 K−2 in Mg3.1Bi1.5Sb0.49Te0.01 are obtained at room temperature. The plastic deformation capacity of Mg3(Sb,Bi)2 compounds provides a near-net-forming method to fabricate special-shaped devices at room-temperature, which will extend the application fields of thermoelectric techniques.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
热电转换
·
固态物理化学
✓ 已验证
DOI
高影响因子
Small
·
2023
·Vol. 20
·期 3
·2306251
·
IF 13.3
Muchun Guo,Ming Liu,Jianbo Zhu,Yuke Zhu,Fengkai Guo,Wei Cai,Yongsheng Zhang,QinYong Zhang,Jiehe Sui
Chemical bonds determine electron and phonon transport in solids. Tailoring chemical bonding in thermoelectric materials causes desirable or compromise thermoelectric transport properties. In this work, taking an example of CaMg 2 Bi 2 with covalent and ionic bonds, density functional theory calculations uncover that element Zn, respectively, replacing Ca and Mg sites cause the weakness of ionic and covalent bonding. Electrically, Zn doping at both Ca and Mg sites increases carrier concentration, while the former leads to higher carrier concentration than that of the latter because of its lower vacancy formation energy. Both doping types increase density-of-state effective mass but their mechanisms are different. The Zn doping Ca site induces resonance level in valence band and Zn doping Mg site promotes orbital alignment. Thermally, point defect and the change of phonon dispersion introduced by doping result in pronounced reduction of lattice thermal conductivity. Finally, combining with the further increase of carrier concentration caused by Na doping and the modulation of band structure and the decrease of lattice thermal conductivity caused by Ba doping, a high figure-of-merit ZT of 1.1 at 823 K in Zn doping Ca sample is realized, which is competitive in 1–2–2 Zintl phase thermoelectric systems.
研究领域:
材料科学
·
凝聚态物理
·
无机化学
·
能源材料
·
热电转换
✓ 已验证
DOI
高影响因子
Small
·
2024
·Vol. 20
·期 45
·2403852
·
IF 13
Xinxin Wang,Chao Wang,Yajing Wang,Min Hao,Shengqiang Cui,Xudong Huang,Chunhui Wang,Jing Chen,Zhenxiang Cheng,Jianli Wang
N-type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single-band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n-type PbSe involves reducing lattice thermal conductivity (κ lat ) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n-type AgCuTe-alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag 2 Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi-coherent phase boundary is observed between the PbSe matrix and the Ag 2 Te nanoprecipitates. This semi-coherent phase interface effectively scatters low-frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high-temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n-type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.
研究领域:
材料科学
·
凝聚态物理
·
能源材料
·
纳米结构工程
·
热电转换
✓ 已验证
DOI
高影响因子
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
·
2022
·Vol. 24
·期 44
·27105-27113
·
IF 3.945
Panpan Peng,Chao Wang,Lanwei Li,Shuyao Li,Jing Chen,Pengya Fan,Rui Du,Haotian Si,Zhenxiang Cheng,Jianli Wang
Endotaxial nanostructures can reduce lattice thermal conductivity through enhancing phonon scattering without affecting electrical transport, leading to a high thermoelectric performance. On the other hand, band engineering can enhance electrical transport by improving the Seebeck coefficient through valence band convergence and the resonance level. In this paper, the synergistic effect of band engineering and endotaxial nanostructures was implemented in SnTe thermoelectric materials by alloying with AgCuTe and doping with Indium. The positron annihilation lifetime spectra show that the vacancy concentration in SnTe was reduced after alloying with AgCuTe, which led to a decreasing hole concentration and improved carrier mobility. Additionally, the diffusion of Ag in the matrix during the preparation can facilitate valence band convergence. Therefore, the power factor of SnTe is greatly increased to 18 μW cm−1 K−2 at 800 K, which can be further increased to 21.4 μW cm−1 K−2 at 800 K after In doping due to resonance level formation. Meanwhile, Cu2Te endotaxial nanostructures also can be observed in the TEM image after SnTe alloying with AgCuTe. So, the lattice thermal conductivity significantly reduced to 0.93 W m−1 K −1 in In-doped and AgCuTe-alloyed SnTe. Finally, we obtain an enhanced ZT value of 1.14 in Sn1.02In0.01Te–1%AgCuTe at 800 K.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电转换
·
纳米结构调控
·
半导体物理
·
能源材料
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2018
·Vol. 7
·期 11
·5991-6000
·
IF 9.931
Weiguang Wang,Hua Tian,Gequn Shu,Dongxing Huo,Fang Zhang,Xiuping Zhu
A bimetallic thermally regenerative ammonia-based battery (B-TRAB) using inexpensive materials efficiently converts low-grade thermal energy into electricity with high power density. Through thermal regeneration of the anolyte, the B-TRAB system realized high-voltage discharge (1.38 V) with redox couples [Cu(II)/Cu and Zn(NH3)42+/Zn] and low-voltage charge (0.72 V) with Zn(II)/Zn and Cu(NH3)42+/Cu. Adding 2 M NH3 to the anolyte of a Cu/Zn-TRAB produced a peak discharge power density of 525 W m−2-electrode (120 W m−2-membrane), and the voltage (or current) and peak power could be doubled by connecting two cells in series (or parallel). In successive regeneration cycles, a maximum power density of 115 W m−2-electrode (26 W m−2-membrane) and a net energy density of 714 W h m−3 were produced at a constant current density of 100 A m−2. The power density was enhanced to 515 W m−2-electrode (118 W m−2-membrane) and maintained in successive cycles by adding acid to the regenerated catholytes, with a net energy density of 299 W h m−3 (discharged at a constant load of 12 Ω and charged at a constant current density of 100 A m−2). A thermal-electricity conversion efficiency of 0.95% (10.7% relative to the Carnot efficiency) was achieved.
研究领域:
能源材料
·
电化学工程
·
热电转换技术
·
可持续能源
·
功能材料
✓ 已验证
DOI
高影响因子
Materials Today Physics
·
2023
·
IF 11.5
Ruifan Si,Zhongwei Zhang,Chengyan Liu,Ying Peng,Xiaobo Bai,Baoquan Feng,Junliang Chen,Jie Gao,Lei Miao
With developing of thermoelectric (TE) performance, GeTe-based TE materials present great promising application at medium temperatures as a replacement for toxic PbTe. However, the further improvement of TE properties is severely constrained by the coupling of electron and phonon transport. In this study, we achieve decoupled electron and phonon transport by effectively creating a special phase boundary to scatter phonon but transmit electron by implanting multi-walled carbon nanotubes (MWCNTs) into Bi-doped GeTe. With the help of this decoupling mechanism, the power factor is effectively improved and reaches up to ∼4482 μW −1 m −1 K −2 at 673 K while the thermal conductivity shows an obvious drop to ∼1.27 W m −1 K −1 at 723 K, leading to an impressive increase in zT to a maximum value of ∼2.3 at 723 K. In particular, a competitive average zT value of ∼1.43 in the temperature range of 323–773 K is obtained, which is at a high level in lead-free GeTe-based materials. Our method could be used as a guidance for the decoupling of electron and phonon transport in other TE materials .
研究领域:
材料科学
·
凝聚态物理
·
能源材料
·
热电转换
·
纳米复合材料
✓ 已验证
DOI
高影响因子
Plasmonics
·
2015
·Vol. 11
·期 3
·909-915
·
IF 2.238
Wang Shuxia,Wang Hui,Liu Ting,Huang Yingzhou,Chen Guo,Wei Hua,Su Xun,Zeng Xiping,Xia Zengzilu,Wen Weijia,Sun Mengtao
In the propagating process along metal surface, surface plasmon polaritons (SPPs) mainly decay into thermal loss or release into photons, while a part of them were converted into electrons with high energy termed as hot electrons, which have great significance in photonics and electronics. In this work, the generation of plasmonic hot electrons was ascertained in the nanoparticle-film system through plasmon-driven surface catalysis (PDSC) reactions. The surface-enhanced Raman scattering (SERS) spectra of p,p'-dimercaptoazobenzene (DMAB) catalyzed by 4-nitrobenzenethiol (4NBT) experimentally demonstrated the essential catalysis electrons were generated in this hybrid plasmon mode. The results pointed out the priority of plasmonic hot electron generation in the dimer-film gap compared to the monomer-film gap which was analyzed by the surface electric and charge distribution. Furthermore, the SERS spectra of 4NBT in the metal nanoparticle-dielectric film system confirmed the necessity of hybrid plasmon mode in the generation of plasmonic hot electrons in the nanoparticle-film system. Because of the simple configuration and convenient fabrication of nanoparticle-film system, the work on this hybrid plasmon mode has a significant role in promoting the application of plasmonic hot electrons.
研究领域:
纳米光子学
·
等离激元学
·
表面科学
·
催化化学
·
分子光学
·
材料物理
·
半导体器件
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）