SmartMat
·
2026
·Vol. 7
·期 1
·e70064
·
IF 14.3
Shuai Zhang,Kezhou Chen,Lin Xi,QingXin Luan,Jiayi Liu,Tiegen Liu,Lili Hou
Optically switchable functions are highly interesting for AI applications in smart displays, memory encryption, and neuromorphic computing. The use of molecular photoswitches to precisely modulate functionalities at the nanoscale, such as photoluminescence (PL), is essential for developing photoswitchable nanomaterials. However, it is challenging to achieve the universal regulation of full-color PL, particularly for the efficient optical modulation while maintaining both high PL quantum yield (PLQY) and effective photoswitchable states. Herein, we report a simple and efficient photoswitchable system achieved through the hybridization of quantum dots (QDs) and diarylethene (DAE) photoswitches. The PL intensity of the three primary colors (RGB) can be reversibly switched on and off using the same DAE upon exposure to specific light. Our design exhibits a maximum PLQY exceeding 90% in the on state while maintaining a PL on/off ratio approaching 100, which represents one of the current highest values. The excellent performance relies on the synergistic energy transfer mechanism of the Förster resonance energy transfer and triplet energy transfer. Our photoswitchable materials enable the straightforward preparation of RGB QDs@DAE films for applications in reversible patterned display and information encryption. The patterns and information can be erased and rewritten multiple times, offering flexible and reusable smart materials toward data storage, advanced display, and anti-counterfeiting technologies.
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Laser & Photonics Reviews
·
2026
·
IF 9.7
Yiming Zhao,Artem V. Kuklin,Jiahui Hou,Mingqi He,Lyudmila V. Begunovich,Han Zhang,Ying Li,Hans Ågren,Lingfeng Gao
Along with the increased attention of core–shell heterojunction quantum dots (QDs), there have been recent strong efforts to improve their practical applications by developing the synthetic approaches. In this work, uniform Te@Se core–shell QDs have been successfully fabricated via combining liquid-phase exfoliation and epitaxial growth methods, where the similar lattice structures of the materials from the same main group can effectively solve the lattice mismatch issue. Theoretical calculations reveal that the Te@Se material is a Type-I heterojunction with favorable initial electron transfer from core Te to shell Se upon formation. The photo-response performance of Te@Se QDs is systematically investigated by producing photoelectrochemical type photodetectors in low concentration electrolytes (0.1–10 mM), for which optimized photocurrent density (32.63 µA/cm 2 ) and photoresponsivity (1564 µA/W) could be achieved. The device also exhibits fast response and excellent stability, which could overcome instability issues in high-concentration electrolytes and expand the practical applications.
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ACS Nano
·
2026
·
IF 17.3
Chen Li,Chengyu Li,Zheng Tang,Ke Liu,En Chen,Yiming Wang,Yazhou Zhou,Jing Guo,Yonggang Wang
Interlayer engineering offers a compelling strategy for tailoring emergent quantum states in van der Waals materials. The latest discoveries of nickel-based superconducting materials have once again ignited extensive interest in exploring transition-metal-based high-temperature superconductors. Two-dimensional metal-centered geometry, subtle valence regulation, and interactions dominated by interlayer stacking are key to achieving the superconducting state. Here, we present that pressure-mediated interlayer sliding in the antiferromagnetic honeycomb lattice CrPSe3 triggers a cascade of electronic transitions, including an insulator-to-metal crossover, the emergence of a density-wave-like order, and possible superconductivity. The resulting phase diagram reveals a maximum transition temperature of 5.8 K concomitant with complete suppression of the density-wave-like order at 30.1 GPa. Comprehensive structural analyses uncover successive interlayer sliding accompanied by aberrant compressibility and pronounced volume collapse. Atomic-resolution imaging corroborates the irreversible sliding process, leading to a distinct metastable electronic state upon decompression. These insights underscore interlayer sliding as a powerful tool for manipulating quantum states in van der Waals materials.
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PubMed
高影响因子
Nanomaterials
·
2026
·Vol. 16
·期 3
·205
·
IF 4.8
Qiya Liu,Xinsheng Yang,Min Zhang
Magnetic topological insulators (TIs) are promising candidates for realizing the quantum anomalous Hall effect (QAHE) and advancing the development of next-generation low-energy transistors and electronic devices. Doping Bi2Se3with nano-carbon can introduce magnetic order and open the Dirac gap without introducing extrinsic magnetic impurities. In this work, the C0.06Bi2Se3single crystal was prepared using the Bridgman method, and their electrical and magnetotransport properties were systematically investigated. Temperature-dependent resistivity and magnetoresistance measurements revealed a magnetic-field-induced metal–insulator-like transition near 152 K. Angle-resolved photoemission spectroscopy (ARPES) detected an energy gap of about 43 meV at the Dirac point, confirming that carbon doping modulates the surface state and opens the gap. Pronounced Shubnikov–de Haas oscillations indicate high carrier mobility in C0.06Bi2Se3. Furthermore, the temperature-dependent Kerr spectra shows that the spin relaxation behavior of C0.06Bi2Se3differs significantly from that of pure Bi2Se3; the relaxation process of spin electrons from the surface state (τs) dominates the spin dynamics and exhibits distinct trends around 30 K and 150 K due to the interplay of the Dirac gap and impurity-induced states. These results demonstrate the potential of magnetic topological insulator C0.06Bi2Se3for novel electronic and spintronic applications.
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PubMed
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Journal of Materials Chemistry A
·
2026
·
IF 9.2
Tengfei Wang,Qing Pang,Boyu Liu,Kaimin Fan,Hongyu Wang
Phase interface engineering plays an essential role in the design and development of effective electromagnetic wave (EMW) absorption materials and energy storage devices. Nevertheless, the development of multifunctional materials that can simultaneously tackle these challenges remains a significant difficulty. In this study, we developed multifunctional defect-rich 1T/2H-WX2/RGO (X = S, Se) nanosheets utilizing a simple solvothermal and freeze-drying technique. The synthesized 1T/2H-WX2/RGO nanosheets exhibited superior EMW absorption and electrochemical characteristics. The effective absorption bandwidth (EAB) reached 7.68 GHz at a thickness of 3.10 mm. This excellent performance can be attributed to various loss mechanisms, including conductive loss, defect-induced dipole polarization loss and interface polarization loss. Moreover, the 1T/2H-WS2/RGO-15 nanosheets attained a high specific capacitance of 390.44 F g−1 at a current density of 1 A g−1. In contrast, the 1T/2H-WSe2/RGO-4 nanosheets demonstrated impressive cycling stability of 71.81% after 5000 cycles, which can be attributed to the active sites provided by its rich heterogeneous interface. The energy density of the 1T/2H-WS2/RGO-15 nanosheets was measured to be 4.27 Wh kg−1 at a power density of 400 W kg−1. This research offers valuable insights into the development of multifunctional materials that can serve as EMW absorbers and supercapacitor electrodes.
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ACS Applied Materials & Interfaces
·
2026
·
IF 8.2
Zeyi Guan,Yidong Huang,Suye Li,Liuyan Zhang,Renyu Zhou,Lichan Wu,Danting Wu,Gengzhe Shen,Guibin Tan
Designing electrocatalysts that are both highly efficient and remarkably stable for the oxygen evolution reaction (OER) holds immense significance in enhancing the performance efficiency of water electrolysis within renewable energy systems. In this study, a MoSe2@NiFe2O4 p–n heterostructure was constructed to effectively regulate the interfacial built-in electric field (BIEF), thereby tuning the electronic distribution and transfer behavior and optimizing the adsorption/desorption reaction kinetics. Structural and electronic characterizations confirmed a pronounced work function difference (Δ = 1.9 eV) between MoSe2 and NiFe2O4, which drives spontaneous electron migration from MoSe2 to NiFe2O4. This leads to the generation of a strong BIEF at the interface, which, in turn, promotes efficient separation and transfer of charge. Benefiting from this, the MoSe2@NiFe2O4 electrode exhibits outstanding OER performance in 1.0 M KOH, requiring only 212 mV to achieve a current density of 10 mA cm–2 and 290 mV to deliver 1000 mA cm–2, while sustaining a minimal overpotential and demonstrating exceptional stability, even when subjected to high current densities, thereby outperforming the majority of previously reported OER catalysts. This work demonstrates that exploiting work function differences to construct and regulate interfacial BIEF offers a new strategy and theoretical foundation for designing highly efficient OER electrocatalysts via interfacial engineering.
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GREEN CHEMISTRY
·
2026
·
IF 10.6
Qizhou Xue,Jiaqi Feng,Boyang Liu,Yanlin Wang,Aofei Cheng,Chongyang Jiang,Xiaofu Sun,Min Wang,Yinge Bai,Shaojuan Zeng,Xiangping Zhang
Non-metal element doping has emerged as an effective strategy to modulate electrochemical CO2 reduction reaction performance. However, current research predominantly focuses on individual doping configuration (interstitial doping or substitutional doping), and systematic investigations into the effects of different doping types on electrocatalytic activity remain scarce. This limitation significantly hinders the rational design and broader implementation of doping strategies. In this work, we successfully prepared two distinct selenium (Se)-doped bismuth catalysts (interstitial doping and substitutional doping) and systematically investigated the effects of these two doping configurations on the performance of CO2 electroreduction to formate. Detailed experimental and theoretical studies revealed that Se interstitial doping facilitated more efficient electron transfer to the active Bi sites compared to substitutional doping, thereby enhancing the stability of key intermediate *OCHO and lowering the free energy barrier for its formation. Meanwhile, Se interstitial doping more effectively suppressesd the hydrogen evolution reaction. As a result, Se interstitial doping Bi displayed > 90% formate Faradaic efficiency (FE) at an ampere-level current density (0.9 A cm-2 – 1.3 A cm-2) in pH-universal (acidic, pH=1.2; neutral, pH=7; and alkaline, pH=14) electrolytes and a maximum formate FE of 98.1% was achieved in alkaline electrolyte. This work provides new insights into the structure-function relationship of Se doping configurations and offers a rational design strategy for developing highly selective and efficient catalysts for CO2 electroreduction.
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ACS Applied Energy Materials
·
2026
·
IF 5.5
Min Fan,Yanqing Wang,Hui Dai,Dongchen Guo,Zhiping Fang,Chenrui Ji,Yifan Sun,Xiaochen Feng,Tongqi Ye,Chengwu Shi
Antimony selenosulfide (Sb2(S,Se)3) is an emerging photovoltaic light-harvesting layer material due to its optoelectronic properties, high absorption coefficient, low preparation cost, and high environmental sustainability. However, during the device fabrication of Sb2(S,Se)3 solar cells, a large number of defects are prone to form on the surface and interface of the film, leading to aggravated nonradiative carrier recombination, which severely restricts the improvement of device photovoltaic performance. Herein, a disulfide-bond-containing polyurethane (SSPU) is introduced as a dynamic polymeric interfacial layer for Sb2(S,Se)3 solar cells. Benefiting from the synergistic chemical coordination of polar N/O groups with surface Sb atoms and thermally activated disulfide bond rearrangement, SSPU simultaneously passivates surface dangling bonds and relieves grain-boundary stress in Sb2(S,Se)3 thin films. This dual-function modulation effectively suppresses nonradiative carrier recombination and facilitates interfacial charge transport, leading to a pronounced open-circuit voltage enhancement from 0.462 to 0.493 V and a champion power conversion efficiency of 8.28%. This work demonstrates a dynamic polymer-enabled interface engineering strategy for antimony chalcogenide photovoltaics.
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Energy Material Advances
·
2026
·
IF 17.4
Wenying Wang,Xiaojie Ji,Lin Bo,Wenying Zhou,Xingshuo Liu,Zheng Zhang,Degang Zhao
AgInSe2 has been regarded as a highly promising candidate for mid-temperature thermoelectricapplications, primarily attributed to its intrinsic low lattice thermal conductivity and superiorenvironmental friendliness. To enhance its practical applicability and address the critical limitationsof inherently low electrical conductivity and suboptimal power factor, this study adopted the rapidmicrowave melting to synthesis the material, and integrated the dual optimization strategies of Fedoping and carbon nanotubes (CNTs) compositing to synergistically regulate the thermoelectrictransport properties. Systematic investigations revealed that Fe doping effectively optimized thecarrier concentration of the material to 2.96×1019 cm–3, laying a foundational framework for furtheroptimization. The incorporation of CNTs not only furnished high mobility pathways for electrontransport but also introduced more interface phonon scattering centers, synergistically decreasingthermal conductivity while enhancing electrical conductivity. Notably, the AgIn0.99Fe0.01Se2-0.6wt% CNTs sample achieved a peak thermoelectric figure of merit (ZT) of ~ 0.55 at 780 K,representing a 1.5-times enhancement compared to the pristine material. Additionally, the Vickershardness of the optimized composite was improved by 32%, realizing the concurrent optimizationof both thermoelectric transport properties and mechanical performance. By orchestrating a dual-optimization paradigm, this investigation elucidates the microscopic mechanisms governingthermoelectric transport properties enhancement in intrinsically low-carrier AgInSe2, therebyfurnishing a transferable roadmap for elevating environmentally benign energy-harvestingtechnologies toward practical deployment.
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ACS Applied Energy Materials
·
2026
·
IF 5.5
Zhongshuo Li,Tingting Zhang,Zhangheng Lai,Yutao Mo,Zhengmao Luo,Ning Qi,Zhiquan Chen
SnTe is widely recognized as a promising alternative to environmentally harmful PbTe for thermoelectric applications at moderate and high temperatures. Nevertheless, due to the ultrahigh hole concentration as well as lattice thermal conductivity, the thermoelectric performance of pure SnTe is greatly constrained. In our work, a novel strategy was put forward to optimize the relatively poor thermoelectric performance of SnTe by simultaneously incorporating In2Se3 and Cd. The Seebeck coefficient was apparently improved through the whole temperature range originating from the introduction of resonant energy levels achieved by In doping, while lattice thermal conductivity was decreased to a relatively low level of ∼0.49 W m–1 K–1 at 873 K, owing to a decrease in sound velocity and strong scattering on phonon caused by nanopores and dislocations after doping. Profiting from the synergistic optimization thermoelectric performance strategies, a peak zT of 1.32 at 873 K was achieved in Sn0.96Cd0.04Te+1%In2Se3, which represents a remarkable 89% increase over pristine SnTe. And an average zT of 0.66 from 303 to 873 K was also obtained. Our work provides a new strategy for multifunctional synergistic modulation of the thermoelectric properties of SnTe-based materials.
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CRYSTAL GROWTH & DESIGN
·
2026
·
IF 3.6
Jingdan Lei,Yajing Wang,Xiaoyun Yang,Xiwei Zhang,Di Yuan,Huijuan Geng,Dan Hu,Gui Yang,Chao Wang
Polycrystalline SnSe is more favorable for practical applications compared with its single-crystalline counterpart due to its easier scalability and mechanical robustness. However, its TE performance is limited by poor electrical transport properties, resulting in a low carrier concentration and modest power factor. Here, we demonstrate both theoretically and experimentally that alkali metal Li doping serves as an effective carrier engineering strategy to overcome performance limitations. First-principles calculations reveal that Li acts as an efficient acceptor, inducing a significant charge transfer and modifying the electronic structure. Experimentally, doping Li increases the carrier concentration 2 orders of magnitude up to 1.8 × 1019 cm–3, resulting in significantly enhanced electrical conductivity and a peak power factor of 7.1 μW cm–1 K–2. Eventually, a high zT value of ∼2.0 at 823 K is achieved in Li-doped SnSe. This work offers important insight for the rational design of high-performance polycrystalline SnSe.
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iScience
·
2026
·
IF 4.5
Liying Wen,Dongsheng Hu,Ruihong Zhang,Xiaoxiang Hu,Yan Luo,Hui Chen,Yifang Liang,Yong Li,Shifeng Wang
Two-dimensional materials have attracted much attention due to their unique structures and excellent optoelectronic properties. In this work, we fabricated c-axis-aligned SnSe 2 /Bi 2 Se 3 2D heterostructures via a hydrothermal technique, where the epitaxial growth of Bi 2 Se 3 nanoplates is achieved on SnSe 2 microplate substrates. The electronic states at the interfaces can be regulated facilely via tuning the Bi 2 Se 3 nanoplate coverage. The heterostructure not only increases the wavelength range over which light is absorbed, but also promotes the separation and migration of photo-excited charge carriers. Therefore, the heterostructure-based photodetector attains a photoresponse that outperforms those devices composed of pure SnSe 2 and Bi 2 Se 3 by a factor of 3.0 and 4.9, respectively. Furthermore, the optimal heterostructure generates a photocurrent of 289 μA cm -2 under ultraviolet illumination, which surpasses those of recently reported state-of-the-art photodetectors. Accordingly, this work establishes an effective approach for developing low-cost, high-perfomance optoelectronic devices based on 2D chalcogenides.
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