CHEMICAL ENGINEERING JOURNAL
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2020
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IF 10.652
Benjun Huo,Jie Yang,Yao Bian,Daofu Wu,Julin Feng,Jiaer Zhou,Qiang Huang,Fan Dong,Xiaosheng Tang
The superior optical properties and adjustable bandgap allows for hybrid halide perovskite quantum dots to be promising photocatalytic materials, but the serious radiative recombination and instability inhibit the improvement of photocatalytic conversion efficiency. Herein, we successfully synthesized the FAPbBr 3 /A-SiO 2 nanocomposites photocatalyst by anchoring formamidinium (FA + , HC(NH 2 ) 2+ ) lead halide perovskite quantum dots on aminated silica spheres to construct the composite photocatalysts via N H chemical bonding. The FAPbBr 3 /A-SiO 2 composites show the significantly enhanced visible-light-driven NO removal activity (70%) compared to the pristine FAPbBr 3 (30%) in half an hour at room temperature, revealing that the increased active sites and efficient charge carrier separation contribute to the absorption and activation of reactant molecules. This work would open the new possibilities for improving the photocatalytic ability of perovskite quantum dots.
研究领域:
材料科学
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环境科学
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光学
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产品关联
DOI
高影响因子
Advanced Optical Materials
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2025
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IF 7.2
Jing-Ming Hao,Zhen-Yu Ma,Yong-Hui Song,Ya-Lan Hu,Guan-Jie Ding,Sami Ur Rahman,Yi-Chen Yin,Bai-Sheng Zhu,Cheng-Ming Wang,Zhi Zhao,Min Ge,Hong-Bin Yao
Perovskite light-emitting diodes (PeLEDs) exhibit exceptional potential for next-generation high definition displays. As a promising electron transport layer (ETL), inorganic zinc oxide (ZnO) can endow PeLEDs with high brightness due to its high electron mobility. However, their application in FAPbBr 3 -based green PeLEDs is hindered by detrimental interfacial reactions at ZnO/perovskite interfaces. Here, an efficient silicon oxide (SiO 2 ) modification strategy is presented for ZnO ETL to regulate interfacial reactions between ZnO and FAPbBr 3 . Introducing tetraethyl orthosilicate (TEOS) during ZnO sol-gel fabrication, a conformal SiO 2 coating forms on the ZnO surface after calcination. This modification effectively suppressed interfacial deprotonation between ZnO and FAPbBr 3 , thereby mitigating FA + depletion and enabling the formation of a highly crystalline and uniform FAPbBr 3 film. The resultant ZnO-based green PeLEDs achieved a maximum luminance exceeding 3.0 × 10 5 cd m −2 , with peak external quantum efficiency (EQE) improved from 5.0% to 10.8% compared to unmodified devices. Furthermore, this modification is applied in blue PeLEDs using FAPbBr 3-x Cl x emitter layer, delivering a peak luminance of 1003 cd m −2 . This work provides a feasible interfacial engineering strategy for ZnO ETL to achieve high-brightness PeLEDs.
研究领域:
材料科学
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光电子学
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纳米技术
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固态照明
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显示技术
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产品关联
DOI
高影响因子
Advanced Energy Materials
·
2023
·Vol. 13
·期 23
·2300451
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IF 27.8
Jun He,Dewang Li,Hongli Liu,Junyan Xiang,Jiaxv Bai,Yuting Ren,Zhongyue Wang,Meng Xia,Xunjie Yin,Longfei Yuan,Fei Zhang,Shirong Wang
α -phase formamidine lead iodine ( α -FAPbI 3 ) as a competitive candidate to pursue high-performance perovskite solar cells (PSCs) suffers from the weakness of random nucleation and disordered growth in chasing high-grade polycrystalline films. Here, single-crystal seeds crystallization (SCSC) method is proposed to obtain high-quality α -FAPbI 3 perovskite films for the first time. Six single-crystals seeds (CsPbBr 3 , CsPbI 3 , FAPbBr 3 , FAPbI 3 , MAPbBr 3 , and MAPbI 3 ) are employed to regulate α -FAPbI 3 perovskite crystallization. These seeds act as nucleation sites and allow the perovskite to grow directly. The rapid crystallization significantly improves the crystallinity of perovskite films with uniform morphology, large grain size, and less defects. Of particular note, FAPbBr 3 seed prefers to grow α -FAPbI 3 epitaxially from FAPbBr 3 @PbI 2 heterostructure through a halogen anion exchange process. The average grain size of FAPbBr 3- perovskite film is boosted to 2.6 µm, and the trap density reduced by 11 times. The resultant FAPbBr 3 -PSCs achieve a maximum power conversion efficiency (PCE) of 23.84% with a high open-circuit voltage of 1.18 V. The unencapsulated PSC retains 91% of the initial PCE after 3000 h of storage at ≈30–50% relative humidity and preserves 98.5% of the original value after 155 h illumination with maximum power point tracking.
研究领域:
材料科学
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光伏技术
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晶体生长
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纳米技术
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半导体器件
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DOI
高影响因子
ACS Nano
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2018
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IF 13.709
Dengbao Han,Muhammad Imran,Mengjiao Zhang,Shuai Chang,Xian-gang Wu,Xin Zhang,Jialun Tang,Mingshan Wang,Shmshad Ali,Xinguo Li,Gang Yu,Junbo Han,Lingxue Wang,Bingsuo Zou,Haizheng Zhong
In this paper, we reported the in situ fabrication of highly luminescent formamidinium lead bromide (FAPbBr3) nanocrystal thin films by dropping toluene as an anti-solvent during the spin-coating with a perovskite precursor solution using 3,3-diphenylpropylamine bromide (DPPA-Br) as a ligand. The resulting films are uniform and composed of 5–20 nm FAPbBr3 perovskite nanocrystals. By monitoring the solvent mixing of anti-solvent and precursor solution on the substrates, we illustrated the difference between the ligand-assisted reprecipitation (LARP) process and the nanocrystal-pinning (NCP) process. This understanding provides a guideline for film optimization, and the optimized films obtained through the in situ LARP process exhibit strong photoluminescence emission at 528 nm, with quantum yields up to 78% and an average photoluminescence lifetime of 12.7 ns. In addition, an exciton binding energy of 57.5 meV was derived from the temperature-dependent photoluminescence measurement. More importantly, we achieved highly efficient pure green perovskite based light-emitting diode (PeLEDs) devices with an average external quantum efficiency (EQE) of 7.3% (maximum EQE is 16.3%) and an average current efficiency (CE) of 29.5 cd A–1 (maximum CE is 66.3 cd A–1) by adapting a conventional device structure of ITO/PEDOT:PSS/TFB/perovskite film/TPBi/LiF/Al. It is expected that the in situ LARP process provides an effective methodology for the improvement of the performance of PeLEDs.
研究领域:
材料科学
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光学工程
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry Letters
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2026
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IF 4.5
Xinning Wang,Yujie Wen,Di Shen,Maolin Mu,Xiankan Zeng,Chenglong Li,Jianhao Ding,Weiqing Yang,Wen Li
Abstract Formamidinium lead bromide (FAPbBr3) perovskite quantum dots (PeQDs) are promising emitters for next-generation displays owing to their narrow emission, high color purity, and solution processability. However, surface-derived trap states promote nonradiative recombination and charge accumulation, limiting PeQLED performance. Here, 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide is introduced during PeQD synthesis to regulate surface coordination. Spectroscopy supports coordination of its electron-rich P═O group with undercoordinated Pb2+ sites, thereby suppressing trap-assisted nonradiative recombination. Reduced Urbach energy and comparative space-charge-limited-current trap-density estimates support lower energetic disorder, while frequency-resolved electrical measurements indicate diminished slow charge relaxation and trap-mediated charge accumulation. Consequently, the optimized PeQLED achieves a peak external quantum efficiency of 18.3%, a maximum luminance of 75,180 cd m–2, and a current efficiency of 85.4 cd A–1. These results link molecular surface coordination with nonradiative-loss suppression and dynamic charge regulation, providing a strategy for efficient PeQLEDs.
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DOI
高影响因子
Journal of Materials Chemistry C
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2020
·Vol. 8
·期 29
·9936-9944
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IF 7.059
Yanan Wu,Lihui Liu,Wei Wang,Wenzhu Zhang,Hongtao Yu,Jie Qian,Yanfeng Chen,Wei Shen,Shiqi Sui,Zhengtao Deng,Shufen Chen,Wei Huang
Perovskite-based light-emitting diodes (PeLEDs) are arousing great interest as promising technology for next-generation displays due to their narrow emission linewidth, tunable emission wavelength, and high photoluminescence quantum yield. Due to the superiorities of the simple fabricating process and high efficiency, the in situ preparation of PeLEDs has attracted more attention. However, numerous defects are induced due to the ligand loss in the in situ fabrication of the perovskite film, which restricts the performance improvement of PeLEDs to a larger extent. Here, we introduce a dual ligand 2,2-diphenylethylamine bromide (DPEA-Br) in precursor solution and n-octylphosphonic acid (OPA) in antisolvent for in situ fabricating FAPbBr3 perovskite nanocrystals (PNCs). As a result, the OPA–FAPbBr3 PNC films demonstrate a higher crystallinity, a longer radiative lifetime, and an improved environmental stability, due to the synergistic effect of compensating ligands and passivating defects of OPA. Finally, we obtain a significantly enhanced device efficiency of a maximum luminance of 3273 cd m−2 and a current efficiency of 17.7 cd A−1, which are 12.5 times and 6.1 times higher than those of the control device, respectively. The ligand compensation method with OPA proposed in this work can provide a robust platform for achieving high-quality PNC films and highly efficient PeLEDs.
研究领域:
材料科学
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光电子学
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产品关联
DOI
高影响因子
ACS Applied Energy Materials
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2023
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IF 6.4
Meidan Que,Boyue Zhang,Jin Chen,Hao Yuan,Qizhao Wu,Huayan Wang,Dongyun Gui,Bo Li
Defects located in the surface of quantum dots highly impact carrier dynamics and transfer, which would limit the photoelectric conversion efficiency (PCE) of perovskite quantum dot solar cells. Herein, we deposit high-quality FAPbBr3 quantum dot films through passivating Pb salts and conducting damage-free drying processes. The results indicate that the process of PbBr2 treatment and vacuum drying process fill both the Pb2+ and Br– vacancies and minimize the damage of the FAPbBr3 quantum dot film. The device assembled with this film achieved a champion PCE of 3.11% and involved an ultrahigh open-circuit voltage of 1.67 V or more. In addition, both the corresponding FAPbBr3 quantum dot films and devices exhibited higher humidity stability than the control films and devices. These studies will provide insights for designing high-quality perovskite quantum dot films with superior optoelectronic properties.
研究领域:
材料科学
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能源技术
·
光电化学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）