Surfaces and Interfaces
·
2025
·
IF 6.3
Chunlin Wen,Zhenhua Tang,Tingsu Liu,Fan Qiu,Yan-Ping Jiang,Xin-Gui Tang,Yi-Chun Zhou,Xiangjun Xing,Ju Gao
Recently, Ga 2 O 3 -based devices with a wide bandgap have gained great attention in power semiconductor devices. However, Ga 2 O 3 -based devices with the substable crystalline phase and high performances need be further developed and discussed. In this work, the α-Ga 2 O 3 thin films and GQDs/α-Ga 2 O 3 heterojunctions were prepared by magnetron sputtering on the transparent FTO substrates with a buffer TiO 2 layer. And, the good self-powered deep-ultraviolet photodetection performance and mechanisms were discussed in the GQDs/α-Ga 2 O 3 /α-TiO 2 /FTO devices: its responsivity to 254 nm UV light can reach 1.72 mA/W at a bias voltage of 0 V, a normalized detection rate of 1.7 × 10 10 Jones and the light-to-dark current ratio (PDCR) of ∼1 were achieved due to the change of heterojunction energy band type from II to I. Moreover, the good self-powered deep UV photodetection for GQDs/α-Ga 2 O 3 /α-TiO 2 /FTO devices were demonstrated: a PDCR of 1.1 × 10 3 , a self-powered responsivity (R) improved by a factor of 5 to 8.7 mA/W, the rise time (τ r )/fall time (τ f ) of 86/39 ms, and a normalized detectivity (D*) with an improved magnitude of 1.3 to 2.3 × 10 11 Jones were achieved by constructing GQDs/α-Ga 2 O 3 heterojunctions on the outer surface of α-Ga 2 O 3 thin film. These results can provide a reference for the future development of Ga 2 O 3 thin film devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Optical Materials Express
·
2024
·Vol. 14
·期 11
·2728-2739
·
IF 2.8
Chenrui Zhang,You Wu,Yanbin Li,Yanbin Li,Di Xiao,Yuanyuan Zheng,Yuanyuan Zheng,Zhitai Jia,Le Zhang,Le Zhang
As a wide-bandgap semiconductor material, α-Ga2O3 has great potential in high-power devices and deep ultraviolet photodetectors. However, for α-Ga2O3 growth by mist chemical vapor deposition (mist-CVD), the clustering of mist flow often appears, resulting in poor crystallinity and rough surface of the α-Ga2O3 films. In this study, we established a homemade mist-CVD system with a heating structure and a cuboid chamber. The effects of the pressure difference between the inlet and outlet of the reaction chamber as well as the growth temperature on α-Ga2O3 film growth were systematically investigated. High-quality α-Ga2O3 thin films with a smooth surface were prepared at 450 °C under a 80 Pa pressure difference due to the weakened clustering effect of mist flow. The surface root-mean-square (RMS) roughness of the α-Ga2O3 films was as low as 1.32 nm, and the growth rate could reach 26.9 nm/min. The transmittance was higher than 80% in the near-ultraviolet to visible light region, and the optical band gap was determined to be 5.23 eV.
研究领域:
材料科学
·
半导体物理
✓ 已验证
DOI
高影响因子
RSC Advances
·
2017
·Vol. 7
·期 60
·37508-37521
·
IF 3.108
Jianping Wei,Juan Yang,Zhihui Wen,Jun Dai,Yao Li,Banghao Yao
Efficient oxidation of methane over heterogeneous catalysts under ambient conditions is still a challengeable study toward C1 utilization and atmospheric cleansing. In this study, by using a hydrolysis method combined with an impregnation process, β-Ga2O3 nanoparticles supported uniformly on activated carbon (AC) can be obtained readily. The as-prepared Ga2O3/AC composites show efficient performance for photocatalytic oxidation of CH4 under ultraviolet irradiation. The experimental results indicate that photocatalytic activity toward CH4 oxidation is strongly dependent on the weight ratio of Ga2O3 to AC. 15%-Ga2O3/AC exhibits the highest catalytic activity, which is more than sixfold of P25, a benchmark photocatalyst. The photoluminescence spectra show the decreased recombination centers and the diminished recombination of photo-generated electrons (e−) and holes (h+) when Ga2O3 nanoparticles were deposited on AC. Further investigation reveals that the excellent photo-oxidation activity for CH4 over Ga2O3/AC can be ascribed to a synergistic effect involving strong adsorption capacity and improved separation of photo-generated e−/h+ pairs. Moreover, the photocatalytic oxidation of CH4 obeys pseudo-first-order kinetics and the cycling experiment indicates that Ga2O3/AC composites possess stable photocatalytic performance for CH4 oxidation. The underlying photo-oxidation mechanism is also investigated using electron paramagnetic resonance (ESR) and radical scavenging experiments. This study demonstrates that photocatalysis with Ga2O3/AC is a highly efficient method toward the oxidation of low concentrations of CH4, which provides valuable information for atmospheric environmental cleansing.
研究领域:
环境科学
·
催化化学
✓ 已验证
产品关联
DOI
高影响因子
LANGMUIR
·
2019
·
IF 3.683
Yongmin Huang,Xun Tang,Junmei Wang,Hualong Ma,Yingming Wang,Wei Liu,Gongwei Wang,Li Xiao,Juntao Lu,Lin Zhuang
The self-healing feature of gallium (Ga) is unique, making Ga-based materials attract attention for their potential to solve the anode pulverization issue of lithium ion batteries. In this work, a hierarchical two-dimensional (2D) Ga2O3/C structure has been synthesized by a facile NaCl template method. Ga2O3 nanoparticles (3.8 nm) are uniformly embedded in 2D carbon nanosheets. The long horizontal length of the carbon nanosheets (10 μm) provides long-range electron conductivity, and the thin vertical thickness (75 nm) shortens the Li ion diffusion path. Benefited from the integrated 2D structure and the high electron conductivity, the obtained 2D Ga2O3/C nanosheets exhibit excellent overall performance, including high lithium storage capacity (1026 mAh g–1 at 0.5 A g–1), high rate capability (378 mAh g–1 at 10.0 A g–1), and high cyclability (500 cycles at 0.5 A g–1). The lithiation/delithiation mechanism of 2D Ga2O3/C has been further studied with combined electrochemical and ex situ X-ray diffraction methods.
研究领域:
材料科学
·
能源存储
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Shuyue Yang,Zhen Xu,Jie Xu,Junlin Lu,Dongmei Zhang,Shibing Ni
Nitrogen doped carbon bridged Li 3 VO 4 -Ga 2 O 3 hybrid (Li 3 VO 4 -Ga 2 O 3 /NC) is first synthesized through an intermediate solution method with subsequent annealing. The Li 3 VO 4 -Ga 2 O 3 /NC hybrid exhibits robust pseudocapacitive charge storage owing to the synergetic effect between each component, resulting in ultra-high capacity and ultra-stable cyclability as anode for Li-ion batteries. At a specific current of 0.1 A g −1 , the Li 3 VO 4 -Ga 2 O 3 /NC electrode delivers high reversible capacity of 652.6 mA h g −1 after 400 cycles, without obvious capacity attenuation over cycling. After three periodic rate performance testing from 0.1 to 2.0 A g −1 over 260 cycles, the Li 3 VO 4 -Ga 2 O 3 /NC electrode delivers high discharge capacity of 750.3 mA h g −1 when reverting current to 0.1 A g −1 . The Li 3 VO 4 -Ga 2 O 3 /NC electrode also shows excellent long cycle stability at 1.0 A g −1 , delivering high discharge capacity of 450.4 mA h g −1 after 1600 cycles.
研究领域:
材料科学
·
电化学
·
能量存储
✓ 已验证
DOI
高影响因子
Energy & Environmental Materials
·
2023
·Vol. 7
·期 2
·e12585
·
IF 15
Dongdong Zhang,Qiliang Wei,Haili Huang,Lan Jiang,Jie Teng,Ruizhi Yu,Qing Zhang,Shengxing Liu,Lin Wang,Weiyou Yang
Crystalline γ-Ga 2 O 3 @rGO core–shell nanostructures are synthesized in gram scale, which are accomplished by a facile sonochemical strategy under ambient condition. They are composed of uniform γ-Ga 2 O 3 nanospheres encapsulated by reduced graphene oxide (rGO) nanolayers, and their formation is mainly attributed to the existed opposite zeta potential between the Ga 2 O 3 and rGO. The as-constructed lithium-ion batteries (LIBs) based on as-fabricated γ-Ga 2 O 3 @rGO nanostructures deliver an initial discharge capacity of 1000 mAh g −1 at 100 mA g −1 and reversible capacity of 600 mAh g −1 under 500 mA g −1 after 1000 cycles, respectively, which are remarkably higher than those of pristine γ-Ga 2 O 3 with a much reduced lifetime of 100 cycles and much lower capacity. Ex situ XRD and XPS analyses demonstrate that the reversible LIBs storage is dominant by a conversion reaction and alloying mechanism, where the discharged product of liquid metal Ga exhibits self-healing ability, thus preventing the destroy of electrodes. Additionally, the rGO shell could act robustly as conductive network of the electrode for significantly improved conductivity, endowing the efficient Li storage behaviors. This work might provide some insight on mass production of advanced electrode materials under mild condition for energy storage and conversion applications.
研究领域:
材料科学
·
能源存储与转换
✓ 已验证
DOI
高影响因子
Small
·
2023
·Vol. 19
·期 30
·2300154
·
IF 13.3
Rong Tu,Xinyu Li,Qingfang Xu,Tenghua Gao,Xian Zhang,Bao-Wen Li,Song Zhang,Takashi Goto,Lianmeng Zhang
The oriented growth of β-Ga 2 O 3 films has triggered extensive interest due to the remarkable and complex anisotropy found in the β-Ga 2 O 3 bulks. Remarkable properties, including stronger solar-blind ultraviolet (SBUV) absorption, better mobility, and higher thermal conductivity, are usually observed along <010> direction as compared to other low-index axes. So far, <010>-oriented β-Ga 2 O 3 film growth has been hindered by the lack of suitable substrates and higher surface energy of the (010) crystal plane. Herein, the first growth of uniquely <010>-oriented β-Ga 2 O 3 films on quartz substrates by laser chemical vapor deposition (LCVD) are reported. By investigating the effects of deposition temperature ( T dep ) and O 2 flow rate ( R O2 ) on the growth of β-Ga 2 O 3 films, it is found that the formation of <010> orientation is closely related to the higher stability of oxygen close-packed planes under O-rich condition. As a result, a grain size of up to ≈2 µm and a deposition rate of up to ≈ 40 µm h −1 are obtained. Metal-semiconductor-metal (MSM) type detector based on <010>-oriented β-Ga 2 O 3 film exhibits ultra-fast response speed, 1–2 orders of magnitude higher than those of most detectors based on β-Ga 2 O 3 films with other orientations.
研究领域:
材料科学
·
半导体物理
·
光电技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Electronic Materials
·
2023
·
IF 4.7
Zhiyuan Chen,Peipei Han,Wenhui Chen,Zhi Wan,Jizhou Yang,Zhigang Liu,Peng Hu,Feng Teng,Haibo Fan
In recent years, Ga2O3 flexible solar-blind ultraviolet photodetectors (UVPDs) are gradually becoming the focus of research and the industry because of their excellent wearability, low manufacturing cost, portability, large area compatibility, and high scalability. However, the crystallization temperature required for high-quality α-phase Ga2O3 films exceeds the heat resistance of most flexible materials, so the growth of Ga2O3 films on flexible substrates is a very big challenge. In this study, a highly ordered α-Ga2O3 nanorod array and flexible solar-blind UV PDs with excellent performance were successfully prepared on a flexible titanium (Ti) substrate at 500 °C by a simple water bath heating method. When irradiated by 254 nm ultraviolet light, the α-phase Ga2O3 flexible photodetector exhibits an excellent self-power optical response at 0 V bias and exhibits excellent photoelectric performance with a responsivity of 15.3 mA/W, a fast rise and fall time of 0.104 and 0.077 s, a photocurrent density of 45.7 μA/cm2, and a high detectivity of 13.8 × 109 Jones. Bending and repeating experiments demonstrated that the detector had high stability. This study provides a simpler and less expensive method for the preparation of flexible self-powered α-Ga2O3 solar-blind UV photodetectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2025
·
IF 5.1
Dong Zhu,Chunfeng Wang,Fuhang Jiao,Jiujun Xu,Haoran Xu,Shun Han,Peijiang Cao,Yuxiang Zeng,Ming Fang,Wenjun Liu,Deliang Zhu,Youming Lu
Optical physical unclonable functions (PUFs) are powerful tools to combat counterfeiting, owing to their unpredictable preparation processes and unique, identifiable information content. Achieving high entropy and robustness in optical PUFs is essential for practical applications but remains challenging. This study demonstrates a multilevel, solar-blind, and thermostable PUF based on host-sensitized luminescence of trivalent dysprosium (Dy3+) in β-phase gallium oxide (β-Ga2O3). The controllable occupation of Dy3+ in both tetrahedral and octahedral Ga3+ sites of β-Ga2O3 results in heterochromatic optical emission, which affords the resulting PUFs with a multilevel encoding capacity of 44096 at 64 × 64 pixels. The wide bandgap (∼4.6 eV) of β-Ga2O3:Dy3+ confines the PUF response to solar-blind irradiation, encompassing a light spectrum in the range 230–270 nm, which does not overlap with ambient light, ensuring interference-free stimulation and therefore achieving 100% recognition accuracy. Additionally, the high thermal quenching activation energy (0.386 eV) of β-Ga2O3:Dy3+ provides thermal stability, enabling the PUFs to operate from room temperature up to 125 °C. With near-ideal uniformity, uniqueness, and reproducibility, these PUFs hold considerable promise for practical applications in anticounterfeiting and encryption.
研究领域:
材料科学
·
光学工程
·
信息安全
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Theranostics
·
2019
·
IF 8.063
Xu-Qi Kang,Gao-Feng Shu,Sai-Ping Jiang,Xiao-Lin Xu,Jing Qi,Fei-Yang Jin,Di Liu,Yong-Hong Xiao,Xiao-Yang Lu,Yong-Zhong Du
The prevalence of antibiotic resistance and lack of alternative drugs have posed an increasing threat to public health. Here, we prepared β-Ga 2 O 3 :Cr 3+ nanoparticles modified with ICAM1-antibody-conjugated TPGS (I-TPGS/Ga 2 O 3 ) as a novel antibiotic carrier for the treatment of drug-resistant infections. Methods : I-TPGS/Ga 2 O 3 were firstly characterized by measuring particle size, morphology, crystal structure, drug loading capacity, and in vitro drug release behaviors. The in vitro antibacterial activities of I-TPGS/Ga 2 O 3 /TIG were evaluated using standard and drug-resistant bacteria. The internalization of I-TPGS/Ga 2 O 3 was observed by fluorescence confocal imaging, and the expression levels of the efflux pump genes of TRKP were analyzed by real-time RT-PCR. In vitro cellular uptake and in vivo biodistribution study were performed to investigate the targeting specificity of I-TPGS/Ga 2 O 3 using HUEVC and acute pneumonia mice, respectively. The in vivo anti-infective efficacy and biosafety of I-TPGS/Ga 2 O 3 /TIG were finally evaluated using acute pneumonia mice. Results : It was found that TPGS could down-regulate the over-expression of the efflux pump genes, thus decreasing the efflux pump activity of bacteria. I-TPGS/Ga 2 O 3 with small particle size and uniform distribution facilitated their internalization in bacteria, and the TPGS modification resulted in a significant reduction in the efflux of loaded antibiotics. These properties rendered the encapsulated tigecycline to exert a stronger antibacterial activity both in vitro and in vivo . Additionally, targeted delivery of I-TPGS/Ga 2 O 3 mediated by ICAM1 antibodies contributed to a safe and effective therapy. Conclusion : It is of great value to apply I-TPGS/Ga 2 O 3 as a novel and effective antibiotic delivery system for the treatment of drug-resistant infections.
研究领域:
药学
·
生物医学工程
·
微生物学
✓ 已验证
DOI
PubMed
高影响因子
ACS Applied Nano Materials
·
2023
·
IF 5.9
Qing Liu,Jiaming Guo,Jing Li,Lizhi Feng,Lixin Chen,Zhe Hua,Liu Yang,Xinglai Zhang,Baodan Liu
Herein, we demonstrated the controllable synthesis of a centimeter-scale two-dimensional (2D) ZnO-doped Ga2O3 nanostructure layer by a liquid Ga–Zn alloy printing strategy at near room temperature. Different from the liquid Ga–In and Ga–In–Sn alloys, the surface oxidation behavior of a liquid Ga–Zn alloy follows an obvious competition and cooxidation characteristics instead of the dominant oxidation characteristic of Ga, which could be effectively used to precisely tailor the Zn content of 2D Ga2O3 films. With an increase of the nominal Zn content in the Ga–Zn alloy from 0 to 8 atom %, the real Zn content of 2D ZnO-doped Ga2O3 films gradually increases and finally reaches a maximum saturated value of 16–18 atom % at the eutectic component of 3.87 atom %. Correspondingly, the transmittance and band gap of 2D ZnO-doped Ga2O3 films could also be tuned by changes of the Zn content and crystallinity. The method proposed in this work provides a general route toward the doping synthesis of a diverse nonlayered 2D structure, which will shed light on the applications of various displays and deep-ultraviolet optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2023
·
IF 6.4
Jinni Shen,Xu Liu,Yuhua Zhong,Chengwei Qiu,Huihui Xu,Hongsheng He,Haifeng Li,Jianhan Lin,Zizhong Zhang,Xuxu Wang
Solar light-driven overall water splitting for hydrogen production is an ideal solution to climate warming and energy shortage issues. Obtaining a highly efficient and stable photocatalyst remains a major challenge at present. Herein, NixP/γ-Ga2O3 nanosheets, which were synthesized from NiCl2, NaH2PO2, and home-made γ-Ga2O3 nanosheets by the photodeposition method under 254 UV irradiation for 30 min, are found as a highly active and durable photocatalyst for pure water splitting into H2 and O2 without a sacrificial reagent. The H2 production rate is as high as 5.5 mmol·g–1·h–1 under 125 W high-pressure mercury lamp irradiation, which is 3.4 and 2.5 times higher than that on the pristine γ-Ga2O3 nanosheets and Pt/γ-Ga2O3 nanosheets, respectively, and is 2.0 times higher than that on the 0.5 wt % Ni2P/γ-Ga2O3 reported previously. However, the O2 evolution rate is much less than the H2 evolution rate in the initial reaction stage. On prolonging the irradiation time, H2 evolution declines, while O2 evolution increases until it reaches its stoichiometric value corresponding to H2. The reason for the photocatalytic behavior of NixP/γ-Ga2O3 is studied and the corresponding mechanism is suggested. The absent or low oxygen evolution in the initial reaction stage is because the dioxygen generated from water oxidation by the photogenerated holes is wholly or partially captured by the surface oxygen vacancies to form the surface peroxide bonds (−O–O−). Once the oxygen vacancies are eliminated by the photogenerated O2, the overall water splitting reaction would reach the steady state. Thereafter, H2 production decreases from 5.5 to 2.0 mmol·g–1·h–1, but the O2 evolution gradually approaches the corresponding stoichiometric value, especially for the photocatalyst treated with H2O2 for 24 h.
研究领域:
材料科学
·
催化
·
可再生能源
·
光化学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）