SEPARATION AND PURIFICATION TECHNOLOGY
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2025
·
IF 9
Shizhe Chen,Weinan Dong,Weisong Zhao,Wen Qiang,Xiangxiang Chen,Bao Guo,Kaixi Jiang
Germanium is one of the strategic scattering metals, and recovering a minor concentration of scattering metals from zinc concentrate’s leaching solution is an essential resource worldwide. Practically, neutralizing precipitation and the subsequent dissolution are implemented to enrich scattering metals from zinc leaching solution, facilitating further extraction of Ge and others. Silicon poses significant challenges to the efficient extraction of Ge due to their similar chemical property and the inert nature of silica. However, the evolution of the Ge occurrence state, especially its relationship with Si, during the precipitation and dissolution process in zinc hydrometallurgy is unclear, and there is a lack of an effective method to separate Si/Ge. This paper started with a detailed characterization and leaching behavior of Ge-enriched residue obtained from the plant, followed by a systematic investigation of Ge behavior in synthetic Si/Ge binary and Fe/Si/Ge ternary systems. Eventually, options for Ge enrichment from zinc leaching solution and Si/Ge separation are recommended, providing a practical framework for mitigating the negative influence of Si on the extraction of Ge in zinc hydrometallurgy. The significant findings are that Ge/Si are both presumably co-adsorbed by Fe(OH) 3 colloids upon neutralization to pH 5 of zinc leaching solution, which could be acid redissolved at the unrealistically high liquid-to-solid ratio of 200/1 at the practically meaningful liquid-to-solid ratio of 5/1, Si concentration is high enough to quickly condense and polymerize, resulting the formation of silica precipitate and permanent encapsulating of Ge into silica; interestingly, the Si-O-Ge bonding becomes weakened with pH increasing up to alkaline region and Ge leaching rate exceeding 80% at pH 10, effectively separating Ge from SiO 2 .
研究领域:
冶金学
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材料科学
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DOI
高影响因子
Energy & Environmental Science
·
2024
·Vol. 17
·期 4
·1612-1623
·
IF 32.4
Yaru Gong,Pan Ying,Qingtang Zhang,Yuqi Liu,Xinqi Huang,Wei Dou,Yujing Zhang,Di Li,Dewei Zhang,Tao Feng,Meiyu Wang,Guang Chen,Guodong Tang
Polycrystalline SnSe is considered as a highly promising candidate for thermoelectric applications due to its facile processing, machinability and scale-up applications. Here, we report an extraordinary peak ZT of 2.4 as well as a high average ZT of 0.9 for Ge and S codoped SnSe nanorods synthesized by a facile hydrothermal route. The highly preferentially oriented SnSe nanorods along [100] play a dominant role in scattering heat carrying phonons, resulting in ultralow lattice thermal conductivity (0.15 W m−1 K−1 at 873 K). The band alignment in the electronic structure of SnSe is promoted by Ge doping, contributing to a giant Seebeck coefficient and a largely enhanced power factor of 5.84 μW cm−1 K−2 at 873 K. An extraordinarily high peak ZT and a high average ZT are achieved within a wide temperature range for polycrystalline SnSe without involving toxic elements. Moreover, the reported material exhibits outstanding hardness and compressive strength induced by grain refinement. The high thermoelectric performance and mechanical properties of polycrystalline SnSe open realistic pathways for its widespread application in waste heat recovery and power generation.
研究领域:
材料科学
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热电材料研究
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产品关联
DOI
高影响因子
ACS Catalysis
·
2022
·
IF 13.7
Weiqi Guo,Haolin Luo,Zhi Jiang,Dongxu Fang,Jiasheng Chi,Wenfeng Shangguan,Zhiliang Wang,Lianzhou Wang,Adam F. Lee
Cobalt oxides find widespread application in energy materials as oxygen evolution catalysts (OECs) in the oxygen evolution reaction (OER) and photocatalytic overall water splitting (OWS) reaction. However, the nature of the active cobalt species, their role in these reactions, and possible commonalities remain poorly understand. Here, the impact of (redox-inert) germanium dopants on the physicochemical properties of Co3O4 nanoparticles was investigated in electrochemical oxygen evolution and photocatalytic OWS reactions. A significant enhancement in OER performance on doping is attributed to the restructuring of spinel Co3O4 to serpentine Co3Ge2(OH)5, with the latter transforming to an oxyhydroxide active phase during OER. Combination of the p-type Co3Ge2(OH)5 semiconductor as an OEC with an n-type Bi0.5Y0.5VO4 semiconductor doubles the photocatalytic OWS activity of the latter, resulting in H2 and O2 productivities of ∼175.7 and ∼90.1 μmol/h, respectively. Formation of the composite semiconductor induces an intense internal electric field across the p–n junction, facilitating separation of photogenerated carriers and increased OWS activity, which is also validated in alternative photocatalyst, Al-doped SrTiO3. A similar transformation of serpentine Co3Ge2(OH)5 to an oxyhydroxide was not observed during OWS, indicating that Ge doping confers distinct advantages for electrochemical OER vs photocatalytic OWS.
研究领域:
材料科学
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电化学
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光化学
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催化
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能源材料
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DOI
高影响因子
INORGANIC CHEMISTRY
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2019
·
IF 4.85
Zhizhen Wang,Zhen Song,Lixin Ning,Zhiguo Xia,Quanlin Liu
The Sr3SiO5:Eu2+ phosphor has attracted considerable attention for applications in white LEDs owing to its highly efficient yellow emission under violet-blue excitation. We report herein an enhancement of yellow persistent luminescence in Sr3SiO5:Eu2+ through Ge incorporation. The strongest persistent luminescence intensity is observed for Sr3(Si1–xGex)O5:Eu2+ with x = 0.005 with a peak emission wavelength at ∼580 nm and a persistent time of ∼7000 s at the 0.32 mcd/m2 threshold value after UV radiation. A combination of thermoluminescence measurements and density functional theory (DFT) calculations reveals that the afterglow enhancement is due to a significant increase in the number of oxygen vacancies that act as electron trapping centers with appropriate trap depths. This investigation is anticipated to encourage more exploration of GeSi substitution to design and improve Si-containing persistent phosphors with superior functionalities.
研究领域:
材料科学
·
光学
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DOI
高影响因子
Advanced Energy Materials
·
2022
·Vol. 12
·期 10
·2103690
·
IF 29.698
Fanqi Meng,Bingcheng Yu,Qinghua Zhang,Yuqi Cui,Shan Tan,Jiangjian Shi,Lin Gu,Dongmei Li,Qingbo Meng,Cewen Nan
Aiming at stable CsPbI 3 perovskite solar cells, Ge incorporated for the first time into DMAPbI 3 -based precursor systems. Ge incorporation is found to be able to modify crystallization growth of CsPb 1− x Ge x I 3 films and reduce annealing temperature and treatment time by lowering CsPbI 3 formation energy. The champion power conversion efficiency (PCE) of 19.52% is achieved with a certified PCE of 18.8%, which is the highest performance of CsPbI 3 PSCs with alien element-doping. In addition, in situ formation of GeO 2 can passivate the grain boundary and surface defects, thus significantly improving the moisture resistance of the perovskite film and related devices. Excellent operational stability is achieved with no PCE degradation over 3000 h at a fixed bias voltage of 0.85 V under continuous white LED (6500 K) illumination and a nitrogen atmosphere. This work demonstrates that Ge-incorporation is a promising way to stabilize CsPbI 3 perovskite solar cells by simultaneously improving perovskite crystallinity and passivating the grain boundary and interfacial defects.
研究领域:
材料科学
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能源技术
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产品关联
DOI
高影响因子
Crystals
·
2025
·Vol. 15
·期 7
·622
·
IF 2.4
Haoyu Zhao,Junliang Zhu,Zhonghe Zhu,Lin Bo,Wenying Wang,Xingshuo Liu,Changcun Li,Degang Zhao
Cubic phase SnSe-based materials have great potential in the field of thermoelectricity due to their reduced carrier scattering, increased band degeneracy, and ultra-low lattice thermal conductivity. Nevertheless, systematic studies on the influence of element doping on the thermoelectric properties of cubic SnSe-based materials are still relatively scarce. To enrich the research in this field, this work investigates the effects of Ge doping on the phase composition, electrical and thermal transport properties of cubic Sn0.50Ag0.25Bi0.25Se0.50Te0.50thermoelectric materials. X-ray diffraction (XRD) analysis confirmed that the Ge-doped samples exhibited a single cubic phase structure, while scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) revealed a uniform distribution of elements within the samples. The results indicate that increasing the Ge doping content substantially enhances their electrical conductivity, albeit at the expense of elevated thermal conductivity. By optimizing the content of Ge-doping, the thermoelectric figure of merit (ZT) reached 0.74 at 750 K. Notably, while moderate Ge doping enhances electrical transport properties, excessive doping leads to a significant rise in thermal conductivity, ultimately constraining further thermoelectric performance gains.
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DOI
高影响因子
Materials
·
2026
·Vol. 19
·期 7
·1337
·
IF 3.7
Xiaogong Lv,Shumin Zhang,Yanchun Yang,Guonan Cui,Wenliang Fan,Xing Yue
Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a candidate thin-film photovoltaic material; however, its performance is restricted by innate defect-induced nonradiative recombination. Low-concentration Ge doping has been identified as an efficient way to mitigate these defects, but the selenization temperature remains an important process parameter that governs the structure and optoelectronic characteristics of CZTSSe absorbers. In the present work, low-concentration Ge-doped Cu 2 ZnSn 0.95 Ge 0.05 S 4 (CZTGS) precursor films were synthesized through a green, n-butylammonium butyrate-based solution approach. The effects of the selenization temperature (530–570 °C) on the microstructure, composition, and photovoltaic performance of Cu 2 ZnSn 0.95 Ge 0.05 (S,Se) 4 (CZTGSSe) films and devices were comprehensively investigated. X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectrometer (EDS), atomic force microscopy (AFM) were performed to comprehensively characterize the synthesized samples, and the results suggested that the selenization temperature dramatically altered the film grain growth, crystallinity, elemental retention and surface roughness. Specifically, the film that underwent selenization at 550 °C presented the best crystallinity, which was accompanied by large-scale even grains, efficient Ge 4+ addition to the kesterite lattice and the lowest surface roughness. These better properties in terms of structure and composition resulted in the lowest carrier transport resistance ( R s = 8.6 Ω∙cm 2 ), improved recombination resistance ( R j = 5.9 kΩ∙cm 2 ), inhibited nonradiative recombination, and prolonged carrier lifetime ( τ EIS = 35.8 μs). Therefore, the resulting CZTGSSe thin-film solar cell had an 8.69% better power conversion efficiency (PCE), while its open-circuit voltage ( V OC ) was 0.42 V, the fill factor (FF) was 55.51%, and the short-circuit current density ( J SC ) was 37.71 mA·cm −2 . Our results elucidate the mechanism by which the selenization temperature regulates low-concentration Ge-doped kesterite devices and provide more insights into the optimization of processes for cost-effective, high-performance, and green thin-film solar cells.
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产品关联
DOI
PubMed
高影响因子
Heliyon
·
2024
·
IF 3.4
Fang Wen,Chenghang Li,Bo Zhang,Ke Qin,Xin Li,Mingyue Chen,Zhen Song
Rockery constitutes one of the significant elements of Chinese royal garden design, and it becomes an emerging interdisciplinary topic covering both science and art. In this work, we report an attempt to restore the color of the ancient rockeries by finding the appropriate inorganic pigments. Chromium is doped as activators into strontium melilites with varying Si/Ge ratio, and the synthesized powders give a series of color changing from ice blue to dark-sea green. With the structure and spectroscopic characterizations, we discuss the substitutions of Cr in Mg/Si/Ge sites of the melilite host. The Tanabe-Sugano diagram of 3d 2 configuration is employed to explain the change of diffuse reflectance spectra caused by Si/Ge substitution. With the work, we hope to inspire the interdisciplinary research and promote the rockery heritage restoration and protection.
研究领域:
材料科学
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文化遗产保护
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无机化学
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光谱学
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颜料化学
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DOI
高影响因子
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
·
2019
·Vol. 34
·期 4
·781-786
·
IF 0.605
Gao Peng,Chen Lilin,Wu Bo,Zhang Qiming,Xue Chao,Hou Chengyi,Sun Qiang
An optimal structure design of the lattice mismatched GaInP/GaInAs/Ge solar cell with high photoelectric conversion efficiency was proposed. Two-dimensional Bi 2 Te 3 and Sb 2 Te 3 nanosheets were prepared by solvothermal synthesis method used as thermoelectric (TE) functional materials, which is further hybrid with high conductive reduced graphene oxide (rGO) and carbon nanotubes (CNTs). TE film was then fabricated based on above materials. The power factor of the n -type TE film is 19.31 μW/mK 2 , and the power factor of the p -type TE film is 97.40 μW /mK 2 . The flexible TE device was integrated with flexible solar cell. Compared with the single photovoltaic (PV) cell, the efficiency of the as-prepared flexible integrated device measured under the AM1.5 illumination is significantly improved. The efficiency of the two parallel tests is increased from 27.26% and 26.59%, to 29.11% and 28.92%, respectively. The increasing ratio reaches 6.7%–8.8%.
研究领域:
可再生能源
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材料科学
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热电技术
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光伏技术
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纳米科技
✓ 已验证
DOI
高影响因子
Materials Chemistry Frontiers
·
2026
·
IF 8.1
Guifu Zhang,Xiantan Lin,Xiaoqi Li,Xiaoyu Zhang,Yikun Fu,Qianxi Wang,Yicong Lv,Yan Fu,Wan Luo,Xitao Liu
Nonlinear optical crystals are crucial materials in laser technology. In the field of infrared quasi-phase-matching, high-quality output has been achieved using a limited set of materials, such as periodically poled LiNbO3 and LiTaO3. However, the scarcity of high performance infrared nonlinear optical crystals and suitable periodically structured materials has restricted further progress in infrared quasi-phase-matching. Herein, two Ge-based ferroelectric perovskites of CsGeCl3 (CGC) and CsGeBr3 (CGB) were synthesized, which exhibit a broad transmission window (covering 0.5-25 µm) and strong second harmonic generation responses (1.6 × AGS of CGC and 12.0 × AGS of CGB at 2050 nm). Furthermore, both compounds show ferroelectricity with spontaneous polarizations of 6.6 μC/cm2 and 19.3 μC/cm2, respectively. The induction and erasure processes of periodic ferroelectric domain structures in CGC were observed. These properties underscore their great potential for broadband infrared quasi-phase-matching applications. This work highlights the significance of ferroelectrics in quasi-phase-matching, and provides new opportunities for halide perovskites in nonlinear optics and integrated photonics.
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2025
·
IF 9.5
Ruiping Chen,Yan Wang,Saqib Nawaz Khan,Feifei Xing,Simiao Li,Yiheng Rao,Hao Wang,Zengxia Mei
All-inorganic CsPb(I1-xBrx)3 perovskite solar cells (PSCs) have increasingly broken record power conversion efficiency (PCE), however the poor stability in humid environment is still a serious bottleneck. To suppress the humidity-caused rapid transformation from black phase to yellow phase, germanium (Ge) doping is introduced to improve the tolerance factor of CsPb1-xGexI2.85Br0.15 and its photoelectric performance. A combined investigation of the structural and optical properties reveals a successful substitution of lead (Pb) with Ge in the films as well as a champion PCE of 19.70% for the 1% Ge doped PSC. More significantly, the Ge doped device retained 91.5% of its initial efficiency after being stored in air for 500 hours without any encapsulation process, in contrast to the 83.7% for the undoped counterpart.
研究领域:
材料科学
·
可再生能源
·
光子学
✓ 已验证
产品关联
DOI
高影响因子
Physica Status Solidi-Rapid Research Letters
·
2022
·Vol. 17
·期 4
·2200484
·
IF 3.277
Chenyu Yao,Libo Zhang,Yulu Chen,Cheng Guo,Liu Yang,Yang Lu,Kai Zhang,Lin Wang,Xiaoshuang Chen
Topological insulators (TIs) are under rapid and intensive study in the fields of condensed matter physics, due to exotic electronic properties. Recent studies of photocurrent generation in topological surface states (TSS) properties have insufficient evidence to rule out that of bulk states, hindering the application in optoelectronics. Herein, the chemical vapor transport (CVT) synthesis of GeBi 4 Te 7 crystal by the way of Ge intercalation is realized, enabling isolated Dirac points-associated high-mobility Dirac carriers and larger Seebeck coefficients. Then, the antenna-coupled photodetector in GeBi 4 Te 7 based on planar metal–TI–metal structure is reported, successfully realizing sensitive terahertz response without bias. According to the results, the GeBi 4 Te 7 -based terahertz photodetector has a short response time and a high photoresponsivity (0.42 A W −1 at 0.107 THz and 0.6 A W −1 at 0.28 THz, respectively). The GeBi 4 Te 7 –graphene heterostructure can further improve the responsivity by more than two orders of magnitude, reaching 12 A W −1 at 0.107 THz. These findings bring up doable avenues for GeBi 4 Te 7 materials’ low-energy optoelectronic applications.
研究领域:
凝聚态物理
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材料科学
·
光电子学
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产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）