Advanced Science
·
2025
·
IF 14.1
Xiaoli Li,Sizhao Xing,Yanli Li,Guangshuo Wang,Xiaoyi Gao,Dong Li
Sub-1-nm nanowires (NWs) with fascinating physicochemical properties have demonstrated remarkable potential for applications across various fields. However, it remains a great challenge to prepare sub-1-nm NWs with near-infrared (NIR) absorption characteristics and explore their optoelectronic applications, so far. Herein, a novel cation-exchange strategy in N, N-dimethylformamide (DMF) solvent is introduced to synthesize sub-1-nm PbSe NWs, starting from sub-1-nm ZnSe NWs. Theoretical calculations and nuclear magnetic resonance (NMR) measurements have confirmed that the cation exchange reaction in DMF effectively reduces the barriers for Zn 2+ extraction and Pb 2+ introduction compared to the conventional toluene/methanol system. Notably, the resulting sub-1-nm PbSe NWs exhibit a strong absorption peak at ≈940 nm. Leveraging their unique NIR absorption features and superior carrier transport properties, self-powered photoelectrochemical-type (PEC) photodetectors is fabricated based on sub-1-nm PbSe NWs embedded in polyvinylidene fluoride (PVDF) composite films. These photodetectors demonstrated exceptional photoresponse performance under 940 nm illumination (8.0 mW cm −2 ), with a typical on/off ratio of 4860, a detectivity of 4.65 × 10 11 Jones, and a responsivity of 113 mA W −1 . This work provides a new approach for developing and investigating NIR photoactive sub-1-nm semiconductor NWs with broad application prospects.
研究领域:
材料科学
·
光学工程
·
半导体物理
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DOI
PubMed
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Liquan Yao,Ming-Hao Lai,Limei Lin,Dong Wei,Zhigao Huang,Shuiyuan Chen,Guilin Chen
Severe back interface recombination still impedes the enhancement of device performance in Sb2S3 solar cells, primarily due to a plethora of defects derived from suspended bonds at the rear surface of Sb2S3. In contrast to the conventional physical absorption method (i.e., Sb2S3/Spiro-OMeTAD), herein, we develop a novel strategy involving cation exchange-assisted hot injection for the in situ anchoring of PbSe nanocrystalline structures to the surface of Sb2S3. This process successfully establishes a deeply buried back interface, thereby creating a robust chemically bonding bridge for facilitating smooth carrier transfer. Additionally, the energy level arrangement has been tailored by the quantum size effect of PbSe particles to mitigate band offsets at the back interface. Consequently, the decent PbSe substantially reduces the density of surface defects from 2.44 × 1016 to 9.8 × 1015 cm–3, leading to an effective suppression of nonradiative recombination as supported by the reduction in the surface photovoltage. Ultimately, the power conversion efficiency of Sb2S3 solar cells based on the ITO/TiO2/CdS/Sb2S3/PbSe/C/Ag architecture is elevated from 6.78 to 7.34%, representing the highest efficiency achieved for full-inorganic Sb2S3 solar cells to date. This construction tactic of the deeply buried back interface sheds light on the pursuit of highly efficient Sb2S3 solar cells.
研究领域:
材料科学
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纳米技术
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光伏技术
·
化学
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 8
·期 11
·5699-5708
·
IF 11.301
Xin Qian,Dongyang Wang,Yang Zhang,Haijun Wu,Stephen J. Pennycook,Lei Zheng,Pierre F. P. Poudeu,Li-Dong Zhao
The metallic elements with a small atomic radius can not only compensate for the intrinsic vacancies to improve the carrier mobility, but also can form interstitials to reduce lattice thermal conductivity. In this work, we investigate the contrasting roles of three different metallic elements with small atomic radius on the thermoelectric properties of n-type PbM0.01Se (M = Cu, Zn, Ni). We find that all the metallic elements can increase the carrier concentration as electron donors and improve the electrical transport properties. In addition, the lattice thermal conductivity of PbSe can be significantly decreased through the formation of interstitials by the incorporated extra metallic elements. We also find that the PbCu0.01Se sample exhibits a unique and complex behavior compared with the other samples due to the diffusion and the thermally activated oxidation of Cu+ ions. When the temperature increased to 673 K, the carrier concentration of PbCu0.01Se sample increases suddenly and continues to increase by nearly two folds, which we ascribe to the release of 3d orbital electrons in Cu+ ions. This results in a strong decoupling of the charge and heat transport in the material, which can be manifested by the overestimation of the electronic thermal conductivity when assuming strong electron–phonon coupling in Wiedemann–Franz law. A maximum ZT of ∼1.6 can be reached at 773 K and the average ZT of ∼0.96 can be achieved in PbCu0.01Se. Our results demonstrate the exceptional contrasting behavior of Cu in PbSe by comparing with Zn and Ni, and the thermoelectric performance of n-type PbSe can be enhanced through the introduction of extra metallic elements with small radius.
研究领域:
材料科学
·
物理学
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产品关联
DOI
高影响因子
CHEMISTRY OF MATERIALS
·
2017
·
IF 9.466
Changwang Zhang,Yong Xia,Zhiming Zhang,Zhen Huang,Linyuan Lian,Xiangshui Miao,Daoli Zhang,Matthew C. Beard,Jianbing Zhang
A new strategy for narrowing the size distribution of colloidal quantum dots (QDs) was developed by combining cation exchange and quantized Ostwald ripening. Medium-sized reactant CdS(e) QDs were subjected to cation exchange to form the target PbS(e) QDs, and then small reactant CdS(e) QDs were added which were converted to small PbS(e) dots via cation exchange. The small-sized ensemble of PbS(e) QDs dissolved completely rapidly and released a large amount of monomers, promoting the growth and size-focusing of the medium-sized ensemble of PbS(e) QDs. The addition of small reactant QDs can be repeated to continuously reduce the size distribution. The new method was applied to synthesize PbSe and PbS QDs with extremely narrow size distributions and as a bonus they have hybrid surface passivation. The size distribution of prepared PbSe and PbS QDs are as low as 3.6% and 4.3%, respectively, leading to hexagonal close packing in monolayer and highly ordered three-dimensional superlattice.
研究领域:
材料科学
·
纳米技术
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2015
·Vol. 3
·期 16
·8501-8507
·
IF 7.443
Xiaoyu Zhang,Yu Zhang,Long Yan,Changyin Ji,Hua Wu,Yu Wang,Peng Wang,Tieqiang Zhang,Yiding Wang,Tian Cui,Jun Zhao,William W. Yu
Thin active layers in solar cells normally have lower defect density with easier procedure and lower cost than thick ones. PbSe nanocrystal (NC)-based solar cells with thin layers were fabricated using a ligand exchange procedure. An optical spacer was confirmed to be effective in improving the distribution of light field in the devices, which could enhance the photon absorption of the thin active layers. Meanwhile, the transportation of electrons and holes was balanced and optimized by tuning the particle size and the layer thickness, which demonstrated a high short-circuit current of 32.2 mA cm−2 and a 1 sun power conversion efficiency of 4.12%. Besides, the devices with smaller PbSe NCs preserved the high efficiency for tens of hours, which is different from previous studies using large NCs.
研究领域:
光伏技术
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纳米材料
·
太阳能
·
半导体器件
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2015
·
IF 6.723
Hua Wu,Xiaoyu Zhang,Yu Zhang,Long Yan,Wenzhu Gao,Tieqiang Zhang,Yiding Wang,Jun Zhao,William W. Yu
With good electrical conductivity, optical transparency, and mechanical compliance, graphene films have shown great potential in application for photovoltaic devices as electrodes. However, photovoltaic devices employing graphene anodes usually suffer from poor hole collection efficiency because of the mismatch of energy levels between the anode and light-harvesting layers. Here, a simple solution treatment and a low-cost solution-processed molybdenum oxide (MoOx) film were used to modify the work function of graphene and the interfacial morphology, respectively, yielding highly efficient hole transfer. As a result, the graphene/MoOx anodes demonstrated low surface roughness and high electrical conductivity. Using the graphene/MoOx anodes in PbSe nanocrystal solar cells, we achieved 1 sun power conversion efficiency of 3.56%. Compared to the control devices with indium tin oxide anodes, the graphene/MoOx-based devices show excellent performance, demonstrating the great potential of the graphene/MoOx anodes for use in optoelectronics.
研究领域:
光伏技术
·
纳米材料
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薄膜太阳能电池
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能源材料
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光电子学
✓ 已验证
DOI
高影响因子
INFRARED PHYSICS & TECHNOLOGY
·
2026
·
IF 3.8
Xinjie Wang,Yuchao Wei,Zexu Wang,Yifei Xu,Guangliang Qin,Jiayue Han,Qiang Qi,Jun Wang
Mid-infrared gas detection enables high selectivity and quantitative analysis, but its performance depends strongly on the photodetector serving as the optical receiver. PbSe is a narrow-bandgap semiconductor with favorable photoresponse characteristics in the mid-infrared region. However, existing PbSe photoconductive detectors generally require a relatively high external bias, which can introduce dark current and increase system power consumption. In this work, a solution-mediated grain-boundary engineering strategy was introduced to construct a self-driven PbSe thin-film detector. Under self-driven operation, the device achieved broadband photoresponse over 2.7–9.7 μm, a low current noise amplitude spectral density of 1.02 × 10 -14 A Hz −1/2 , and a specific detectivity of 1.24 × 10 9 Jones at 3.3 μm. During 3000 s of continuous optical modulation, the normalized photovoltage output retained 99.94% of its initial amplitude, demonstrating excellent long-term operational stability. Based on the characteristic absorption of CH 4 near 3.3 μm, the detector was integrated as the receiver in an infrared absorption-based gas detection system, enabling distinguishable concentration-dependent responses over 17–4000 ppm. This study provides a feasible and low-cost strategy for developing stable, low-power, self-driven room-temperature mid-infrared detectors and demonstrates their potential for infrared spectroscopic gas sensing.
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DOI
高影响因子
Progress in Natural Science-Materials International
·
2018
·Vol. 28
·期 3
·275-280
·
IF 2.572
Xin Qian,Yu Xiao,Cheng Chang,Lei Zheng,Lidong Zhao
In this paper, we report that the thermoelectric performance of n -type PbSe could be improved through synergistically optimizing electrical and thermal transport properties via Sb doping and Mg alloying. The carrier concentration was firstly optimized through Sb doping, resulting in a maximum power factor of ~ 15.4 μW cm −1 K −2 and maximum ZT of ~ 0.9 at 873 K in Pb 0.99 Sb 0.01 Se. Then, Mg was selected for alloying in Pb sites to produce point defects, which can largely intensify the phonon scattering and lower thermal conductivity. After Mg alloying, the thermal conductivity at 300 K (873 K) was significantly suppressed from ~ 4.6 Wm −1 K −1 (1.5 Wm −1 K −1 ) for Pb 0.99 Sb 0.01 Se to ~ 2.9 Wm −1 K −1 (1.1 Wm −1 K −1 ) for Pb 0.99 Sb 0.01 Se-6%MgSe. Through combining Sb doping and Mg alloying, a maximum ZT of ~ 1.1 was achieved at 873 K for Pb 0.99 Sb 0.01 Se-6%MgSe, and the average ZT ( ZT ave ) was increased by 28.6% from ~ 0.42 for Pb 0.99 Sb 0.01 Se to ~ 0.54 for Pb 0.99 Sb 0.01 Se-6%MgSe. The results indicate that PbSe is a robust candidate for medium-temperature thermoelectric applications.
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DOI
高影响因子
Journal of Materials Chemistry A
·
2024
·Vol. 12
·期 25
·15177-15185
·
IF 10.7
Yu Tian,Li Ma,Zhifang Zhou,Guang-Kun Ren,Yuansen Li,Zhijie Wei,Yan Shi,Yiying Zhao,Yuan-Hua Lin
Efficient thermoelectric power generation requires a large applicable temperature range and correlated materials with outstanding dimensionless figure of merit values. Lead chalcogenides, especially PbTe-based materials, play a pivotal role in building thermoelectric devices for applications at intermediate temperature. However, the use of earth-scarce Te and the obstacles of achieving a high power factor and low thermal conductivity have limited progress in this field. Here, earth-abundant PbSe-based materials have been made by a simultaneous approach of combining self-propagating synthesis (SHS) and SPS techniques with optimized morphology engineering. Based on excess Ag doping and an ultrafast synthesis process, materials with parallel connections arising from enormous Ag2Se nanofibers with high hole mobility and Ag-doped PbSe with a small effective mass have been created, resulting in enhanced electrical properties. Meanwhile, multi-sized pores which modify the morphology have been formed during the reaction, leading to Ag-doped materials with low lattice thermal conductivity by reducing both the sound velocity and phonon mean free paths. Ultimately, a high figure of merit (ZT) of ∼1.2 at 773 K, and an average value of ∼1.1 over a range from 523 K to 823 K have been achieved for the Pb0.99Ag0.01Se sample. These findings, combined with the energy- and time-saving fabrication process, highlight the prospective commercialization of PbSe-based thermoelectric materials in the future.
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DOI
高影响因子
Laser & Photonics Reviews
·
2026
·
IF 9.7
Ya Wang,Faxin Wang,Haifei Ma,Manning Hu,Yanfei Liu,Jie Cao,Xin Tang,Huicheng Hu
PbSe colloidal quantum dots (CQDs) are promising materials for short-wave infrared (SWIR) imaging, owing to their suitable bandgap, low-cost fabrication, and solution processability. Nevertheless, achieving precise size control together with large size uniformity across a broad infrared spectral range remains a significant challenge, which has consequently limited the development of high-performance PbSe CQD-based infrared photodetectors and imaging systems. In this work, we report a reactivity-engineered synthesis strategy that enables chemical decoupling of nucleation and growth by rationally designing selenium precursors with distinct reactivities. This approach enables the synthesis of size-tunable PbSe CQDs with exceptional size uniformity, yielding particle diameters from 3.26 to 10.14 nm with size deviations below 5%. Leveraging these high-quality materials, we fabricate, for the first time, monolithic PbSe CQD imaging arrays with a resolution of 640 × 512 pixels operating in the extended SWIR region. The resulting imager exhibits a high detectivity of 1.2 × 10 11 Jones at approximately 2000 nm and delivers robust imaging performance at room temperature. These results establish an effective strategy for the synthesis of high-quality PbSe CQDs and highlight their strong potential for high-performance, room-temperature SWIR imaging applications.
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DOI
高影响因子
Journal of the American Chemical Society
·
2026
·
IF 16.6
Jie Zhu,Zhenming Cao,Taibao Wang,Wenyang Qin,Chunyan Wu,Lina Gao,Jiongzhao Li,Xueqian Kong,Xiaogang Peng
Although they serve as the workhorse in the short-wavelength infrared window, performance of lead chalcogenide nanocrystals (NCs) in optoelectronic devices suffers from various atomic-level structural and electronic defects rooted in the facet-ligand interface. Considering the rock-salt structure, here we target the synthesis of PbSe NCs encased in eight (111) facets by introducing soluble chloride (or other halides) and alkanoate ions as mixed ligands in octadecene to release excessive strain within the conventional alkanoate ligand monolayer on the polar (111) facets. The resulting monodisperse octahedral PbSe NCs possess the defined (111) facets, as observed at a resolution of approximately one atomic layer by high-resolution transmission electron microscope (TEM), and a single facet-ligand coordination motif. The resulting NCs exhibit unique optical properties, formation of an orthorhombic three-dimensional superlattice, outstanding chemical stability against aerobic exposure, and excellent structural stability in solutions and thin films. As strong ligands, mixed alkanoate-chloride ligands yield small octahedral NCs─essential for high-efficiency photovoltaic devices─with high mass yields by controlling nucleation and growth. Results here reveal that ligand chemistry is the key toward atomically precise synthesis of colloidal NCs that are ideal for both fundamental research and technical applications.
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DOI
PubMed
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2024
·Vol. 35
·期 10
·1-10
·
IF 2.8
Feng Wenran,Zhang Xiaoke,Hong Anni,Lang Haoze,Li Yongqi,Yuan Shiwei,Jiang Lai
Over the past few decades, lead selenide (PbSe) thin films have been widely utilized in infrared photonic devices owing to their narrow band gap, large exciton Bohr radius, high carrier mobility and large dielectric constant. The doping of PbSe thin films has presented an intriguing possibility for tuning their band gap and absorption spectrum range. In this study, we present a “one-step” synthesis of calcium-doped PbSe thin films using the chemical bath deposition method, aiming to address the challenges associated with complex processes and expensive elements. We investigate the effects of dopant concentration on the crystal structure, optical properties, and photoelectric properties. At a dopant concentration of 5 mmol/L, the preferred (200) peak shifts towards higher angle direction. Upon sensitization with iodine, an iodine-rich PbI 2 phase forms on the top layer of the film, leading to increased barrier heights and efficient electron trapping within the PbI 2 /PbSe structure. Furthermore, we study the resistance as a function of illumination duration in pristine PbSe, PbSe-Ca and PbSe-Ca-I. Our results show that the resistance change rate of PbSe-Ca is 8%, double that of the pristine PbSe. After sensitization, the resistance change rate increases to 13.82–10.6%, which is 4 times higher than that of the pristine PbSe. These findings demonstrate that Ca-doping combined with iodine sensitization can significantly enhance the photoelectric performance of PbSe thin films. This work presents a new opportunity for the application of lead chalcogenides in optoelectronic devices, which undoubtedly generate substantial interest in fundamental investigations of these materials.
研究领域:
材料科学
·
光电子学
·
半导体物理
·
薄膜技术
✓ 已验证
DOI
高影响因子
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