JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Hanning Zhang,Mingxi Ren,Wei Jiang,Jie Yao,Limei Pan,Jian Yang
Sodium-ion batteries (SIBs) have attracted much attention owing to their abundant resources, low cost, suitable energy density and low potential window. However, SIBs still suffer from poor charge transmission kinetics caused by large Na + radius. Therefore, anode materials are considered as the key to the development of high-performance SIBs. Herein, hierarchical Sb 2 S 3 @m-Ti 3 C 2 T x composites with Sb 2 S 3 content of 40–60% were in-situ synthesized by a simple wet chemical method , in which amorphous spherical Sb 2 S 3 particles with a size of 150–200 nm nucleate and grow uniformly on the surface of m-Ti 3 C 2 T x with the formation of Ti-S bond. m-Ti 3 C 2 T x , as a three-dimensional conductive skeleton, not only improved the electron and Na + transportation, but also significantly inhibited the agglomeration and grain growth of Sb 2 S 3 particles, promoted the electrolyte penetration, and effectively absorbed the volume expansion of Sb 2 S 3 during charging and discharging cycles. As a result, the optimized 50% Sb 2 S 3 @m-Ti 3 C 2 T x showed good rate ability and cycling performance, including a capacity of 156 mAh g −1 after 100 cycles at 0.1 A g −1 and 72 mAh g −1 after 1000 cycles at 2 A g −1 with only 0.37% attenuation per cycle. This work provided a simple and effective strategy for the design and construction of MXene-based hybrids as SIBs anode.
研究领域:
材料科学
·
能源存储
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2021
·
IF 13.273
Deyu Bao,Qiang Sun,Linsen Huang,Jie Chen,Jun Tang,Dali Zhou,Min Hong,Lei Yang,Zhi-Gang Chen
Tremendous efforts have been focusing on the improvement of p-type (Bi, Sb) 2 Te 3 -based thermoelectric materials for commercial applications. In this study, we achieve versatile interface engineering through a surface decoration of Bi 0.5 Sb 1.5 Te 3 by amorphous Sb 2 S 3 combining with spark plasma sintering, which introduces semi-coherent Sb/Bi 0.5 Sb 1.5 Te 3 interfaces and dopes S into Bi 0.5 Sb 1.5 Te 3 . Semi-coherent Sb/Bi 0.5 Sb 1.5 Te 3 interfaces strongly scatter phonons and lower energy carriers, leading to decreased thermal conductivity and increased Seebeck coefficient, while the electrical conductivity is not sacrificed due to the compromise of the slightly reduced carrier mobility by interfacial scattering and the increased carrier concentration by S doping. Benefited from the decoupled thermoelectric properties, a significantly enhanced power factor of 3345.40 μW m −1 K −2 and a low thermal conductivity of 0.78 W m −1 K −1 is obtained in Bi 0.5 Sb 1.5 Te 3 -0.4%Sb 2 S 3 , leading to a high peak zT of ∼ 1.31 at 330 K, which shows a 54% enhancement compared with pristine Bi 0.5 Sb 1.5 Te 3 . Moreover, a conversion efficiency of ∼ 7.6% can be predicted in a single leg Bi 0.5 Sb 1.5 Te 3 -0.4%Sb 2 S 3 -based module under a cold side temperature of 300 K and hot side temperature of 480 K. This study paves a facile amorphous Sb 2 S 3 induced interface engineering strategy for the development of high performance (Bi,Sb) 2 Te 3 -based thermoelectric materials.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
ELECTROANALYSIS
·
2017
·Vol. 29
·期 12
·2737-2743
·
IF 2.851
Huiyun Guo,Wenlong Hou,Jingkai Yang,Lan Yu,Bo Liang,Haiquan Zhang
The Sb 2 S 3 film on indium-tin oxide (ITO) substrate has been used as an efficient electron transfer mediator for the fabrication of novel chemical sensor towards hydrazine, which is a diamine known as neurotoxin and carcinogen. Sb 2 S 3 film is deposited on ITO substrate by drop-casting process using Sb 2 S 3 solution as precursor and possesses reticular structure with the morphology of uniform hollow hemispheres. The fabricated chemical sensor for selective detection of hydrazine displays a high sensitivity of 106.25 μA/(mM cm 2 ) with a low detection limit of 0.5 μM and it also exhibits excellent reproducibility and stability in hydrazine detection.
研究领域:
分析化学
·
材料科学
·
环境监测
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materiomics
·
2021
·
IF 6.425
Hui Zhou,Jian Han,Xingyu Pu,Xuanhua Li
Sb 2 S 3 is a promising photovoltaic absorber with appropriate bandgap, excellent light absorption coefficient and great stability. However, the power conversion efficiency (PCE) of Sb 2 S 3 planar thin film solar cells is unsatisfactory for further commercial application due to low crystallinity and high resistivity of Sb 2 S 3 film. Here, we introduce an additive of 4-Chloro-3-nitrobenzenesulfonyl Chloride (CSCl) to alleviate these problems. The CSCl molecular contains two terminal Cl with lone pair electrons, which have the interaction with Sb atoms. Thus, the Sb 2 S 3 film with enhanced crystallization and low trap states has been obtained and the resistivity is also decreased. Furthermore, CSCl additive raises the Fermi level of the Sb 2 S 3 film, thereby enhancing the transport of electron from Sb 2 S 3 to TiO 2 . Consequently, the optimal PCE of Sb 2 S 3 solar cells is raised from 4.20% (control device) to 5.84%. Our research demonstrates a novel additive to enhance the photoelectric performance of Sb 2 S 3 solar cells.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
DOI
高影响因子
NEW JOURNAL OF CHEMISTRY
·
2025
·
IF 2.5
Yafeng Xu,Yu Li,Jian Yao,Xiang Liu,Shengbiao Zhang,Shihao Zhang,Shuqin Dong,Yue Yao,Xihong Ding,Meng Wang
Antimony sulfide (Sb2S3) is regarded as a promising candidate for next-generation photovoltaic technology. In recent years, the efficiency of Sb2S3 solar cells has shown significant improvement, however, there still exists a considerable gap from the theoretical efficiency. This is partially due to the relatively high resistivity and parasitic light absorption of the CdS buffer layer, as well as the unsatisfactory crystal orientation of Sb2S3. In this work, a Zn salt additive is added to chemical bath solution of CdS to regulate the growth of CdS film. Elemental analysis indicates that only a small amount of zinc is deposited into the CdS film. The introduction of the Zn salt additive significantly increases the grain size and electrical conductivity of CdS, while also leading to preferential growth of the [hk1] orientation in Sb2S3 film. The low-cost Sb2S3 solar cells with inexpensive carbon electrodes were fabricated. The enhanced quality of the junction, attributed to the Zn salt additive, leads to improved charge transport and suppressed charge recombination in the Sb2S3 solar cells. As a result, the efficiency increases from 4.90% to 5.74%. This work presents a straightforward and efficient approach for the fabrication of superior CdS buffer layers and Sb2S3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
ELECTROCHIMICA ACTA
·
2021
·
IF 6.901
Mingxi Ren,Dong Cao,Wei Jiang,Kai Su,Limei Pan,Yuhang Jiang,Shanshan Yan,Tai Qiu,Meng Yang,Jian Yang,Chuanfang (John) Zhang
Hierarchical composites with good electrical conductivity and sufficient voids are in great demand for the high-performance storage of sodium ions but typically limited due to the complicated synthesis procedure. Here, we report on a facile wet-chemistry synthesis of Sb 2 S 3 nanoparticles onto highly crumpled Ti 3 C 2 T x nanosheets, which form three-dimensional (3D) architecture with good electrical conductivity. The homogeneously distributed Sb 2 S 3 nanoparticles suppress the restacking issue of the Ti 3 C 2 T x nanosheets, which creates rich voids for rapid electron/Na + transport and minimizes the volume expansion effect from Sb 2 S 3 upon repeated charging/discharging cycles. When used as a sodium-ion battery (SIB) anode, the composite shows a high capacity (329 mAh g −1 at 100 mA g −1 after 100 cycles) and good rate capability and cycling performance (215 mAh g −1 at 2 A g −1 and maintains 118 mAh g −1 after 500 cycles). We believe the metallic interconnected network and the 3D architecture synergistically result in a promoted sodium-ion storage performance. This work provides a simple strategy to construct MXene-based hybrids with a porous network structure for application fields, such as energy storage, photocatalysis, adsorption, and microwave absorption.
研究领域:
材料科学
·
能源存储
✓ 已验证
产品关联
DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2015
·
IF 4.891
Hongling Guo,Yong Cui,Qingwen Tian,Shang Gao,Gang Wang,Daocheng Pan
The Cu2ZnSn(S,Se)4 (CZTSSe) has gained extensive attention in thin film solar cells due to their potential as a nontoxic, low-cost, and earth-abundant absorber material, and a rapid increase in power conversion efficiencies has been demonstrated in laboratory. Compared with the most successful hydrazine-based solution process, the nanocrystal-based ink method and non-hydrazine molecular precursor solution approach are more eco-friendly for fabricating high-efficiency CZTSSe solar cells. However, it is hard to obtain a complete large-grain CZTSSe absorber thin film which can facilitate the transport of photogenerated carriers while minimize grain boundary recombination. Here, we present a simple and effective strategy to significantly enhance grain growth of CZTSSe absorber layers by insetting Sb2S3, CuSbS2, and NaSb5S8 thin films. The incorporation of Sb-based thin films can induce grain growth in the selenization process, and did not produce the impurity phase confirmed by XRD patterns and Raman spectra. It was found that the order of the crystal growth promotion ability is Sb2S3 > CuSbS2 > NaSb5S8 under the same experimental conditions. The presented approach can be extended to other solution processes of fabricating CZTSSe solar cells to enhance their microstructural properties, which are critical for applications in CZTSSe absorbers with fine-grain layers.
研究领域:
材料科学
·
光伏技术
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Solar RRL
·
2021
·Vol. 6
·期 4
·2101017
·
IF 8.582
Hui Deng,Siwei Chen,Muhammad Ishaq,Yingshun Cheng,Quanzhen Sun,Xiao Lin,Qiao Zheng,Caixia Zhang,Shuying Cheng
Sb 2 S 3 has emerged as a promising light-absorbing material due to its nontoxicity, low cost, high stability, and absorption coefficient. However, the absorption spectrum ranges and back-contact barrier between Sb 2 S 3 and Au strongly limit the device performance. p-type Sb 2 Se 3 has a similar lattice structure and properties as Sb 2 S 3 , obtaining absorption expansion and ohmic back contact. Herein, efficient all-inorganic planar Sb 2 S 3 solar cells with the addition of Sb 2 Se 3 layers are fabricated. The functions of Sb 2 Se 3 as cooperative absorber (400 nm) and hole transport layers (HTL, 80 nm) are further explored. Systematic characterizations indicate that the junction quality and depletion widths of the device with the addition of Sb 2 Se 3 are improved by forming a p–i–n structure. As a result, the all-inorganic Sb 2 S 3 solar cell with a Sb 2 Se 3 HTL greatly increases the power conversion efficiency from 2.7% to 5.8% and the fill factor from 40% to 55.4%. The additional Sb 2 Se 3 /Au interface with matched energy-level alignments reduces the back-contact barrier and facilitates hole transport and collection. The present design and methods promote the development of Sb 2 S 3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2023
·Vol. 36
·期 1
·2305841
·
IF 29.4
Xinnian Liu,Zhiyuan Cai,Lei Wan,Peng Xiao,Bo Che,Junjie Yang,Haihong Niu,Huan Wang,Jun Zhu,Yi-Teng Huang,Huimin Zhu,Szymon J. Zelewski,Tao Chen,Robert L. Z. Hoye,Ru Zhou
Sb 2 S 3 is a promising environmentally friendly semiconductor for high performance solar cells. But, like many other polycrystalline materials, Sb 2 S 3 is limited by nonradiative recombination and carrier scattering by grain boundaries (GBs). This work shows how the GB density in Sb 2 S 3 films can be significantly reduced from 1068 ± 40 to 327 ± 23 nm µm −2 by incorporating an appropriate amount of Ce 3+ into the precursor solution for Sb 2 S 3 deposition. Through extensive characterization of structural, morphological, and optoelectronic properties, complemented with computations, it is revealed that a critical factor is the formation of an ultrathin Ce 2 S 3 layer at the CdS/Sb 2 S 3 interface, which can reduce the interfacial energy and increase the adhesion work between Sb 2 S 3 and the substrate to encourage heterogeneous nucleation of Sb 2 S 3 , as well as promote lateral grain growth. Through reductions in nonradiative recombination at GBs and/or the CdS/Sb 2 S 3 heterointerface, as well as improved charge-carrier transport properties at the heterojunction, this work achieves high performance Sb 2 S 3 solar cells with a power conversion efficiency reaching 7.66%. An impressive open-circuit voltage ( V OC ) of 796 mV is achieved, which is the highest reported thus far for Sb 2 S 3 solar cells. This work provides a strategy to simultaneously regulate the nucleation and growth of Sb 2 S 3 absorber films for enhanced device performance.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Huihuang Huang,Yujie Yang,Hongyi Chen,Fanglu Qin,Bin Yu,Ruonan Wang,Qiang Cao,Ti Wang,Qianqian Lin
Antimony sulfide, as a binary chalcogenide, has attracted great attention in the field of optoelectronics in recent years, particularly in photovoltaics, because of its striking merits such as earth elements abundance, excellent stability, chemical versatility, and solution processability. With the rapid development of fabrication techniques and device engineering, the device performance of Sb2S3 solar cells has experienced an unprecedented success. However, photodetectors based on Sb2S3 were barely reported, especially based on the transistor configuration. In this work, we prepared high quality Sb2S3 thin films via a sol–gel method, and Sb2S3 thin films were deposited on zinc–tin oxide based field-effect transistors. Furthermore, an additional electron transport layer was inserted between the Sb2S3 layers and the zinc–tin oxide channels and archived high-performance phototransistors with proper interfacial engineering. The optimized devices exhibited extremely high photosensitivity (106), low dark current (∼10 pA) and noise (∼11 fA Hz–1/2), high detectivity (1 × 1013 Jones), and superior device stability, indicating great potential for next generation solution-processed photodetectors.
研究领域:
光电子学
·
材料科学
·
半导体器件
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Rongfeng Tang,Xiaomin Wang,Chenhui Jiang,Shiang Li,Weifeng Liu,Huanxin Ju,Shangfeng Yang,Changfei Zhu,Tao Chen
Sb2S3 is a kind of new light-absorbing material possessing high stability in ambient environment, high absorption coefficient in the visible range, and abundant elemental storage. To improve the power conversion efficiency of Sb2S3-based solar cells, here we control the defect in Sb2S3 absorber films. It is found that the increase of sulfur vacancy is able to upgrade photovoltaic properties. With the increase in sulfur vacancy, the carrier concentrations are increased. This n-type doping gives rise to an upshift of the Fermi level of Sb2S3 so that the charge transport from Sb2S3 to the electron selection material becomes dynamically favorable. The introduction of ZnCl2 in film fabrication is also found to regulate the film growth for enhanced crystallinity. Finally, the photovoltaic parameters, short-circuit current density, open-circuit voltage, and the fill factor of the device based on the Sb2S3 film are all considerably enhanced, boosting the final power conversion efficiency from 5.15 to 6.35%. This efficiency is the highest value in planar heterojunction Sb2S3 solar cells and among the top values in all kinds of Sb2S3 solar cells. This research provides a fundamental understanding regarding the properties of Sb2S3 and a convenient approach for enhancing the performance of Sb2S3 solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Wenwei Lin,Wen-Ti Guo,Liquan Yao,Jianmin Li,Limei Lin,Jian-Min Zhang,Shuiyuan Chen,Guilin Chen
Hydrothermal deposition is emerging as a highly potential route for antimony-based solar cells, in which the Sb2(S,Se)3 is typically in situ grown on a common toxic CdS buffer layer. The narrow band gap of CdS causes a considerable absorption in the short-wavelength region and then lowers the current density of the device. Herein, TiO2 is first evaluated as an alternative Cd-free buffer layer for hydrothermally derived Sb2S3 solar cells. But it suffers from a severely inhomogeneous Sb2S3 coverage, which is effectively eliminated by inserting a Zn(O,S) layer. The surface atom of sulfur in Zn(O,S) uniquely provides a chemical bridge to enable the quasi-epitaxial deposition of Sb2S3 thin film, confirming by both morphology and binding energy analysis using DFT. Then the results of the first-principles calculations also show that Zn(O,S)/Sb2S3 has a more stable structure than TiO2/Sb2S3. The resultant perfect Zn(O,S)/Sb2S3 junction, with a suitable band alignment and excellent interface contact, delivers a remarkably enhanced JSC and VOC for Sb2S3 solar cells. The device efficiency with the TiO2/Zn(O,S) buffer layer boosts from 0.54% to 3.70% compared with the counterpart of TiO2, which has a champion efficiency of Cd-free Sb2S3 solar cells with a structure of ITO/TiO2/Zn(O,S)/Sb2S3/Carbon/Ag by in situ hydrothermal deposition. This work provides a guideline for the hydrothermal deposition of antimony-based films upon a nontoxic buffer layer.
研究领域:
材料科学
·
太阳能
·
半导体物理
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）