ADVANCED FUNCTIONAL MATERIALS
·
2024
·
IF 18.5
Yu Mao,Tao Wang,Yue Jian,Yuanyuan Huang,Yanmei Deng,Ening Gu,Xianzhong Lin,Guowei Yang
Inkjet printing is a promising and scalable drop-on-demand deposition technique for cost-effective mass production of thin film solar cells. However, the efficiency of inkjet-printed Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells based on dimethyl sulfoxide (DMSO) precursor ink is inferior to state-of-the-art spin-coated devices. Therefore, it is crucial to improve the efficiencies of inkjet-printed CZTSSe solar cells. In this work, inkjet printing technique is used to deposit flat and continuous CZTSSe thin films in ambient air using a novel 2-methoxyethanol-based ink that shows long-term stability in the air and better wettability compared to the conventional used DMSO-based ink. In addition, the effects of printing resolution on the structure, morphology, electrical and photovoltaic properties of CZTSSe light harvesting layer are investigated. Eventually, a remarkable device efficiency of 12.86% is achieved, surpassing the reported record efficiency for CZTSSe solar cells based on inkjet printing by ≈40%. Notably, this inkjet printing method allows for the significant reduction of preparation cost of CZTSSe thin films by improving the raw material utilization, thus paving a more viable pathway toward the sustainable development of CZTSSe solar cells.
研究领域:
材料科学
·
太阳能
·
纳米技术
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Frontiers in Chemistry
·
2022
·
IF 5.545
Zhao Benhui,Deng Yueqing,Cao Lei,Zhu Jichun,Zhou Zhengji
Kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit voltage (VOC) deficiency due to the presence of intrinsic defects and defect clusters in the bulk of CZTSSe absorber films. The doping of extrinsic cation to the CZTSSe matrix was adopted as an effective strategy to ameliorate defect properties of the solar cell absorbers. Herein, a novel Se&Sb2Se3 co-selenization process was employed to introduce Sb into CZTSSe crystal lattice. The results reveal that Sb-doping plays an active role in the crystallization and grain growth of CZTSSe absorber layer. More importantly, one of the most seriously detrimental SnZn deep defect is effectively passivated, resulting in significantly reduced deep-level traps and band-tail states compared to Sb free devices. As a result, the power conversion efficiency of CZTSSe solar cell is increased significantly from 9.17% to 11.75%, with a VOC especially enlarged to 505 mV from 449 mV. This insight provides a deeper understanding for engineering the harmful Sn-related deep defects for future high-efficiency CZTSSe photovoltaic devices.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
DOI
高影响因子
Journal of Energy Chemistry
·
2021
·
IF 9.676
Yueqing Deng,Zhengji Zhou,Xin Zhang,Lei Cao,Wenhui Zhou,Dongxing Kou,Yafang Qi,Shengjie Yuan,Zhi Zheng,Sixin Wu
The development of kesterite photovoltaic solar cells has been hindered by large open-circuit voltage ( V oc ) deficit. Recently, Sn Zn deep point defect and associative defect cluster have been recognized as the main culprit for the V oc losses. Therefore, manipulating the deep-level donor of Sn Zn antisite defects is crucial for breaking through the bottleneck of present Cu 2 ZnSn(S,Se) 4 (CZTSSe) photovoltaic technology. In this study, the Sn Zn deep traps in CZTSSe absorber layer are suppressed by incorporation of Ge. The energy levels and concentration of Sn Zn defects measured by deep-level transient spectroscopy (DLTS) decrease significantly. In addition, the grain growth of CZTSSe films is also promoted due to Ge implantation, yielding the high quality absorber layer. Consequently, the efficiency of CZTSSe solar cells increases from 9.15% to 11.48%, largely attributed to the 41 mV V oc increment.
研究领域:
材料科学
·
光伏技术
·
太阳能
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2025
·
IF 9.5
Yuting Sun,Bin Yao,Yuhong Jiang,Yongfeng Li,Xiaobo Du,Zhanhui Ding,Jiayong Zhang,Chunkai Wang,Ding Ma,Mengge Li,Yan Zhu,Xiaofei Sun,Ning Ding,Liyuan Shi
It is well known that the improvement of crystal quality and photoelectric properties of Cu2ZnSn(S,Se)4 (CZTSSe) is one of the key issues in enhancing power conversion efficiency (PCE). To resolve this problem, we selected Li2CO3 as a Li source to prepare Li-doped CZTSSe by annealing Li-doped Cu2ZnSnS4 (CZTS) precursor films in air, followed by selenization (CZTSSe-Li-A). It is interesting that the air annealing leads to the incorporation of Li and O into CZTSSe in the form of Li-O pairs, which improves the crystal quality and absorption coefficient (α) of CZTSSe-Li-A and decreases its hole concentration and resistivity compared with Li-doped CZTSSe prepared using Li-doped CZTS that is not annealed in air (CZTSSe-Li). By optimizing Li doping concentration, annealing temperature and time, the highest PCE of CZTSSe-Li-A solar cell without MgF anti-reflection layer reaches 11.13%, which is larger than the highest PCE of CZTSSe-Li solar cell (10.21%). Quantitative analysis indicates that the increased PCE of CZTSSe-Li-A solar cell compared to CZTSSe-Li solar cell is mainly attributed to the decrease in reverse saturation current density (J0) and series resistance (Rs) caused by thermal effect of the air annealing, followed by an increase in photogeneration density (JL) and shunt resistance (Rsh). The decreased J0 is due to a reduction in interfacial defect density, increased JL is due to increase in α and depletion region width, and decreased Rs and increased Rsh are due to improve crystal quality. This work offers a route for the improvement of PCE of CZTSSe solar cells.
研究领域:
材料科学
·
光伏技术
·
薄膜技术
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Energy Chemistry
·
2024
·
IF 14
Shicheng Deng,Songfan Wang,Yuanyuan Wang,Qian Xiao,Yuena Meng,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Zhi Zheng,Sixin Wu
Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells suffer from severe carrier recombination, limiting the photovoltaic performance. Unfavorable energy band alignment at the p-n junction and defective front interface are two main causes. Herein, oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the defects. With optimized oxygen incorporation conditions, the carrier separation and collection behavior at the front interface of the device is improved. In particular, it is found that oxygen incorporated absorber exhibits increased band bending, larger depletion region width, and suppressed absorber defects. These indicate the dynamic factors for carrier separation become stronger. Meanwhile, the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier transport. As a consequence, the champion efficiency of CZTSSe solar cells has been improved from 9.74% to 12.04% with significantly improved open-circuit voltage after optimized air-annealing condition. This work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.
研究领域:
材料科学
·
太阳能
·
半导体物理
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Yanping Guo,Jichun Zhu,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yafang Qi,Yuena Meng,Litao Han,Zhi Zheng,Sixin Wu
The kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have shown a continuous rise in power conversion efficiencies in the past years. However, the encountered interfacial problems with respect to charge recombination and extraction losses at the CdS/CZTSSe heterojunction still hinder their further development. In this work, an additional plasmonic local electric field is imposed into the CdS/CZTSSe interface through the electrostatic assembly of a two-dimensional (2D) ordered Au@SiO2 NP array onto an aminosilane-modified surface absorber. The interfacial electric properties are tuned by controlling the coverage particle distance, and the finite-difference time domain (FDTD) simulation demonstrates that the strong near-field enhancement mainly occurs near the p-n junction interface. It is shown that the imposed local electric field leads to interfacial electrostatic potential (Velec) augmentation and improves the charge extraction and recombination processes. These electric benefits enable remarkable improvements in open-circuit voltage (Voc) and short-circuit current (Jsc), leading to the cell efficiency being increased from 10.19 to 11.50%. This work highlights the dramatic role of the plasmonic local electric field and the use of the 2D Au@SiO2 NP array to modify a surface absorber instead of the extensively used ion passivation, providing a new strategy for p-n junction engineering in kesterite photovoltaics.
研究领域:
材料科学
·
光伏技术
·
纳米技术
·
电气工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2014
·
IF 5.03
Wangen Zhao,Gang Wang,Qingwen Tian,Lijian Huang,Shang Gao,Daocheng Pan
Cu 2 CdSn(S,Se) 4 is an important candidate material for thin film solar cell absorber layers . In this work, low-cost Cu 2 CdSnS 4 nanocrytal thin film with a stannite structure has been successfully fabricated by a butyldithiocarbamate-based ethanol solution approach. The selenized Cu 2 CdSn(S,Se) 4 thin film shows large densely packed grains and has a suitable band gap value of 1.01 eV. The Cu 2 CdSn(S,Se) 4 thin film solar cell with a proof-of-concept power conversion efficiency of 3.1% was fabricated.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
Chinese Physics B
·
2018
·Vol. 27
·期 6
·066108
·
IF 1.321
Qing Yu,Jiangjian Shi,Pengpeng Zhang,Linbao Guo,Xue Min,Yanhong Luo,Huijue Wu,Dongmei Li,Qingbo Meng
A study of the self-healing phenomenon of Cu2ZnSn(S, Se)4 (CZTSSe) solar cells has shown more than 10% enhancement in cell performance after storage at room temperature for a week, with a significant improvement in the open-circuit photovoltage (Voc) and fill factor (FF). In addition, up to 10.45% power conversion efficiency (PCE) has been achieved. No obvious change in crystallinity, crystal phase, optical absorption or elemental distribution in the CZTSSe films was detected on examining the x-ray diffraction (XRD) pattern, Raman spectrum, ultraviolet-visible (UV-Vis), and TOF-SIMS. Further investigations on the charge carrier concentration, charge radiative recombination, and band structure suggest that the enhancement in PCE stems mainly from a reduction in deep defects of the CZTSSe semiconductor film.
研究领域:
材料科学
·
可再生能源
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Qing Zhou,Meinan Yan,Yuzhou Sun,Yujiao Ma,Zihan Zhang,Haoyu Xu,Xiaoyun Teng,Chao Gao,Wei Yu
In this paper, we reported a novel precursor solution for the preparation of Cu 2 ZnSn(S,Se) 4 (CZTSSe) film. Large-grain monolayer CZTSSe film can be obtained by using the precursor solution. The influence of selenization temperature on the properties of CZTSSe films and solar cells were investigated. We found the monolayer CZTSSe film can be prepared with the selenization temperature as low as 510 °C. While an increased selenization temperature was used, the size of the crystalline grains in CZTSSe film increased significantly, but the decomposition of CZTSSe material got more serious. As the increase of the selenization temperature, increased short-circuit current (J SC ) can be achieved for the fabricated solar cell, which could be caused by the improved crystallinity of CZTSSe layer and the enlarged depletion width of solar cell (as much as 391 nm). On the other hand, the open-circuit voltage (V OC) decreased as the increase of selenization temperature, which may relate with the decomposition of CZTSSe material. The best solar cell achieved the efficiency of 11.4% (active area), which was based on CZTSSe film with the selenization temperature of 510 °C.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
Solar RRL
·
2019
·Vol. 4
·期 1
·1900410
·
IF 0
Qiong Yan,Shuying Cheng,Xue Yu,Hongjie Jia,Junjie Fu,Caixia Zhang,Qiao Zheng,Sixin Wu
Partial cation substitution is an effective way to inhibit defects and carrier recombination, which can improve the efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. Herein, flexible Cu 2 Zn 1− x Cd x Sn(S,Se) 4 ( x = 0–15%) solar cells are fabricated on Mo foils with partial Cd substitution for Zn via a green solution-process. The best device performance can be achieved when Cd/(Zn + Cd) = 8%, with an efficiency up to 6.49% and a significantly improved device repeatability. The E U decreases from 24 to 15 meV, indicating that antisite defects and band tailings are effectively suppressed. C – V data reveal that W d and V bi are enhanced after doping Cd, resulting in a stronger built-in electric field which facilitates Fermi-level splitting and hence increases band bending of the absorber toward the junction interface. Furthermore, the mechanism of current shunting is studied using an equivalent circuit model with three parallel current pathways to fit J – V curves. The key parameters for the solar cell diode such as A , J 0 , and R sh are significantly improved by partially substituting Zn with Cd, demonstrating that current shunting loss is suppressed and the junction quality is improved, resulting in a significant improvement in device repeatability.
✓ 已验证
DOI
RSC Advances
·
2018
·Vol. 8
·期 49
·27686-27694
·
IF 2.936
Xue Yu,Shuying Cheng,Qiong Yan,Jinling Yu,Wen Qiu,Zhengji Zhou,Qiao Zheng,Sixin Wu
Cation substitution plays a crucial role in improving the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this work, we report a significant efficiency enhancement of flexible CZTSSe solar cells on Mo foils by partial substitution of Cu+ with Ag+. It is found that the band gap (Eg) of (Cu1−xAgx)2ZnSn(S,Se)4 (CAZTSSe) thin films can be adjusted by doping with Ag with x from 0 to 6%, and the minimum Eg is achieved with x = 5%. We also found that Ag doping can obviously increase the average grain size of the CAZTSSe absorber from 0.4 to 1.1 μm. Additionally, the depletion width (Wd) at the heterojunction interface of CAZTSSe/CdS is found to be improved. As a result, the open-circuit voltage deficit (Voc,def) is gradually decreased, and the band tailing is suppressed. Benefiting from the enhanced open-circuit voltage (Voc), the power conversion efficiency (PCE) is successfully enhanced from 4.34% (x = 0) to 6.24% (x = 4%), and the Voc,def decreases from 915 to 848 mV.
研究领域:
光伏技术
·
材料科学
·
薄膜太阳能电池
·
半导体材料
✓ 已验证
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2020
·Vol. 49
·期 10
·6208-6213
·
IF 1.774
Chen Ruilan,Cui Guonan,Yang Yanchun,Li Yuemin,Alata H.,Tian Xiao,Tegus O.
Abandoning the traditional deposition of as-prepared Cu 2 ZnSnS 4 (CZTS) thin films in a glove box, a modified thiol-based solution system suitable for deposition in air is described to further reduce device production costs. In this modified approach, metal salts and thiourea are used as the starting materials and are dissolved in a mixed solution of thioglycolic acid and 2-methoxyethanol, forming a homogeneous precursor solution. The as-deposited CZTS thin films are obtained by spin-coating the precursor solution in air, followed by the selenization process to form large-grained Cu 2 ZnSn(S,Se) 4 thin films. Combining the microstructural results with compositional analyses, the optimal selenization conditions for the Cu 2 ZnSn(S,Se) 4 absorber layer were found to be 540°C and 10 min.
研究领域:
材料科学
·
薄膜制备
·
光电材料
·
能源材料
·
半导体工艺
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）