Advanced Electronic Materials
·
2022
·Vol. 8
·期 11
·2200577
·
IF 7.633
Nan Xin,Guihua Tang,Yifei Li,Hao Shen,Yinan Nie,Min Zhang,Xin Zhao
Single crystal tin selenide (SnSe) has a recorded high thermoelectric figure of merit (ZT) value of 2.6 at 923 K, but it is easy to form mechanical cracks and difficult to apply in thermoelectric conversion devices. Polycrystalline SnSe has better mechanical properties but inferior ZT values, which needs further optimization for applications. This work aims at enhancing the thermoelectric performance of polycrystalline SnSe through synergistic optimization of sliver (Ag) and aluminum (Al) co-doping with the hydrogen reduction. The effects of Ag and Al doping on electronic transport properties are systematically investigated by density functional theory calculation and experimental measurement. Compared with pristine SnSe, Ag doping can effectively increase the hole concentration to 1.58 × 10 19 cm −3 and improve the conductivity. Results also indicate that using Al dopant may slightly decrease the hole concentration but reduce the thermal excitation temperature, and introduce point defects reducing the lattice thermal conductivity through scattering phonons. In addition, the hydrogen reduction of sample powders before synthesis can effectively remove Sn oxides and reduce lattice thermal conductivity. At last, a state-of-the-art maximum ZT value of 1.69 at 823 K is obtained in Ag 0.01 Al 0.01 Sn 0.98 Se. This study provides a theoretical basis and technical guidance for designing high-performance polycrystalline SnSe.
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Wenqi Lu,Shuang Li,Rui Xu,Jian Zhang,Di Li,Zhenzhen Feng,Yongsheng Zhang,Guodong Tang
Here, we report a peak ZT of 1.85 at 873 K for sulfur and Pb codoped polycrystalline SnSe by boosting electrical transport properties while suppressing the lattice thermal conductivity. Compared with single sulfur doped samples, the carrier concentration is improved 1 order of magnitude by Pb incorporation, thereby contributing to improved electrical conductivity and power factor. Moreover, the introduction of sulfur and Pb suppresses the bipolar thermal conductivity by enlarging the band gap. The lattice thermal conductivity significantly decreased as low as 0.13 W m–1 K–1 at 873 K due to the synergic approach involving suppressing bipolar thermal conductivity, large mass fluctuation induced by sulfur incorporation, and nanoprecipitates. We demonstrate that the combination of tailoring band structure, suppressing bipolar thermal conductivity, and introducing large mass fluctuation contributes to the high thermoelectric performance in SnSe. The high performance was achieved through boosting electrical transport properties while maintaining ultralow thermal conductivity. Our findings offer a new strategy for achieving high performance thermoelectric materials.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
COMPOSITES COMMUNICATIONS
·
2021
·
IF 6.617
Jueshuo Fan,Xuan Huang,Fusheng Liu,Liang Deng,Guamgming Chen
Despite the significant progress in thermoelectric composites in recent years, composite systems completely composed of one-dimensional (1D) and two-dimensional (2D) nanostructures are rarely reported. In this study, the thermoelectric composites are prepared using 2D nanobelts of SnSe, obtained by a chemically exfoliation process (solvothermal lithium-intercalation and subsequent exfoliation), and 1D single-walled carbon nanotubes (SWCNTs) via a facile solution mixing and subsequent vacuum filtration method. The thermoelectric performance of the SnSe nanobelt/SWCNT composite films are further improved by post-treatment of thermal annealing. An optimized power factor at room temperature of 145 ± 28 μW m −1 K −2 for the composite film with 80 wt% SWCNTs has been realized, which is much higher than that of either component. The results inspire a new insight into the SnSe-related thermoelectric composites, laying a foundation for the fabrication of high-performance thermoelectric composites in the future.
研究领域:
材料科学
·
纳米技术
·
热电材料
✓ 已验证
产品关联
DOI
高影响因子
RARE METALS
·
2025
·Vol. 44
·期 5
·3339-3350
·
IF 11
Wang Wen-Ying,Zhu Jun-Liang,Bo Lin,Zhou Wen-Ying,Liu Xing-Shuo,Li Chang-Cun,Zhang Zheng,Zhao De-Gang
The rock-salt cubic SnSe compound with multiple valleys and inherent low thermal conductivity is considered to be a promising thermoelectric compound. In this study, heterogeneous Pb atoms were strategically introduced into the lattice of cubic SnSe matrix, synergistically adjusting the thermoelectric transport properties of samples by optimizing hole carrier concentration ( n ) and suppressing thermal conductivity ( κ tot ). When the doping content reached 0.08 mol, the peak power factor (PF) at 300 K increased to 20.00 μW·cm –1 ·K –2 . The growing internal microstrain induced by the differences in atomic size strengthened the phonon scattering and effectively reduced the lattice thermal conductivity ( κ L ). With further decoupling of the electrical and thermal transport properties, a peak thermoelectric figure of merit ( ZT ) of 0.82 and an average ZT of 0.42 (300–750 K) were achieved in the samples doped with 0.10 mol Pb. These findings highlight the effectiveness of the selected dopants and demonstrate their synergy in improving the performance of thermoelectric materials. Graphical
研究领域:
材料科学
·
凝聚态物理
·
能源材料
·
热电转换
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半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2025
·Vol. 13
·期 48
·41788-41797
·
IF 9.5
Wenjie Li,Zeqing Hu,Ziwang Zhang,Zehao Lin,Min Ruan,Jiahao Jiang,Jing Shuai
Enhancing the thermoelectric performance of n-type polycrystalline SnSe remains challenging due to the trade-off between carrier transport and lattice thermal conductivity. Here, we demonstrate that trace incorporation of the lead-free perovskite Cs2TiCl6 enables concurrent optimization of these factors in SnSe0.93. The [TiCl6]2− octahedral framework introduces effective electron donors, while Ti 3d states induce local band flattening, increasing the density-of-states effective mass without severely degrading weighted mobility. Consequently, the 0.5 wt% Cs2TiCl6 sample attains a high power factor of ∼532.1 µW m−1 K−2 at 823 K. Meanwhile, Ti-rich domains together with multi-scale structural defects (strain fields, dislocations, and twin boundaries) substantially intensify phonon scattering, driving the lattice thermal conductivity down to ∼0.32 W m−1 K−1 at 823 K—a 40.6% reduction relative to the pristine specimen. Benefiting from this synergistic carrier and phonon engineering, a peak ZT of ∼1.2 at 823 K is achieved for 0.5 wt% Cs2TiCl6, representing a 179.1% enhancement over undoped SnSe0.93 and outperforming most reported n-type polycrystalline SnSe-based materials. This work establishes trace lead-free perovskite doping as a dual-function strategy—simultaneously enabling band structure modulation and phonon mean free path suppression—offering a viable route toward environmentally benign, high-efficiency n-type SnSe thermoelectrics.
✓ 已验证
产品关联
DOI
高影响因子
LANGMUIR
·
2025
·
IF 3.9
Yue Liu,Huan-Yan Xu,Bo Li,Shu-Yan Qi,Li-Guo Jin,Lian-Wei Shan,Li-Min Dong
Two-dimensional (2D) piezoelectric catalysts hold significant potential for environmental remediation. However, the comparative analysis of aspect ratios in different directions remains unexplored, and the structure–activity relationship in 2D piezoelectric materials is still ambiguous, limiting catalytic activity improvements and technological applications. Herein, SnSe piezoelectric catalysts with high aspect ratios along different directions were synthesized to investigate their efficacy in organic pollutant degradation. Lamellar SnSe exhibited superior catalytic activity compared to its rod-like counterparts, with superoxide and hydroxyl radicals identified as the dominant reactive species. Furthermore, the piezoelectric properties associated with continuous aspect ratio modulation in different directions were systematically simulated and analyzed. The thickness modulation with an exponential pattern was identified as the most effective strategy for tailoring the piezoelectric properties. This work provides fundamental insights into the correlation between the structural parameters of 2D piezoelectric catalysts and their pollutant degradation efficiency, paving the way for the rational design of high-performance piezoelectric catalytic systems.
研究领域:
环境修复
·
材料科学
·
催化
·
纳米技术
·
物理化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry A
·
2022
·Vol. 10
·期 23
·12429-12437
·
IF 14.511
Shuang Li,Yunxiang Hou,Di Li,Bo Zou,Qingtang Zhang,Yang Cao,Guodong Tang
SnSe is considered one of the most intriguing new thermoelectric materials. Polycrystalline SnSe offers a wide range of thermoelectric applications due to its facile synthetic processing and machinability. Herein, we have achieved a high average ZT of 0.8 as well as a high peak ZT of 1.86 in solution-synthesized porous Zn and Ga codoped SnSe nanosheets, generating a maximum energy conversion efficiency of 13.3%. High-density micro/nanopores are induced in the SnSe matrix, which are more effective for scattering phonons and reducing the thermal conductivity. The high density of micro/nanopores, nanosheet structure and dislocations contribute to an ultralow lattice thermal conductivity (0.157 W m−1 K−1 at 873 K). Meanwhile, Ga incorporation can induce band convergence and create resonance levels, producing a large Seebeck coefficient. Ga and Zn codoping contributes to a sharp increase in carrier concentration and an obviously increased electrical conductivity. The enhanced Seebeck coefficient and increased carrier concentration help in achieving a significant enhancement of the power factor over a wide temperature range in the porous Zn and Ga codoped SnSe nanosheets. Consequently, high thermoelectric performance is realized over a wide temperature range via the decoupling of electron–phonon transport in SnSe. This work opens up a great opportunity for designing prospective materials for thermoelectric applications with the aid of the solution synthesis route.
研究领域:
材料科学
·
凝聚态物理
·
纳米科技
·
能源材料
·
半导体物理
·
热电转换
·
无机功能材料
✓ 已验证
DOI
高影响因子
International Journal of Applied Ceramic Technology
·
2023
·Vol. 21
·期 2
·1220-1230
·
IF 2.1
Yi Qin,Mengxue Wang,Xiaohan Li,Yajuan Zhang,Shenglai Tang,Jianfeng Zhu,Ting Zhao
SnSe-based materials have attracted widespread attention in thermoelectrics due to their outstanding thermoelectric performance. However, the pristine and unmodified polycrystalline SnSe reveals poor electrical properties. Doping and constructing nanostructured composite architectures to produce energy filtering effect proved to be an effective method to strengthen thermoelectric performance. In this study, Ti 3 C 2 /Sn 0.98 Cd 0.02 Se composites are successfully fabricated by the solvothermal method combined with the electrostatic self-assembly method and spark plasma sintering. The phase interface introduced by incorporating Ti 3 C 2 into Sn 0.98 Cd 0.02 Se can effectively filter low-energy carriers due to its generation of energy barriers, thereby the Seebeck coefficient of x wt% Ti 3 C 2 /Sn 0.98 Cd 0.02 Se x = (0.05, 0.5, 1) samples is better than that of the pristine Sn 0.98 Cd 0.02 Se over the whole temperature range. Meanwhile, high conductivity was also obtained in 1 wt% Ti 3 C 2 /Sn 0.98 Cd 0.02 Se sample so that the high power factor of 3.31 μWcm −1 K − 2 was acquired at 773 K. Ultimately, a peak ZT value of 0.41 was obtained at 773 K, compared with pristine Sn 0.98 Cd 0.02 Se, and the thermoelectric performance improved by 24%. This study offers an available approach to efficiently enhance the thermoelectric properties of polycrystalline SnSe-based materials.
研究领域:
材料科学
·
热电学
·
纳米技术
✓ 已验证
DOI
高影响因子
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
·
2025
·Vol. 27
·期 37
·19939-19949
·
IF 2.9
Zhangheng Lai,Xiangbin Chen,Qixian Zheng,Zhengmao Luo,Zhongshuo Li,Ning Qi,Zhiquan Chen
Polycrystalline SnSe has been widely explored due to its relatively low thermal conductivity. Yet its thermoelectric performance is limited due to its poor electrical conductivity. In this work, polycrystalline SnSe alloyed with different contents of CuAgSe were fabricated by a high-energy balling and melting method, combined with spark plasma sintering. It is revealed that substitution of Ag and Cu at Sn sites actually enhances the electrical conductivity, especially under Sn-deficient circumstances where the formation energy of AgSn is lowered. When there was excessive addition of CuAgSe, the hole carrier concentration was reduced due to the formation of Agi, which acts as an electron donor. Additionally, partial substitution of Ag and Cu into the Sn vacancies slightly improves the Hall mobility and the density of states effective mass. With increased electrical conductivity while maintaining a stable Seebeck coefficient, the Sn0.99Se sample alloyed with 0.75% CuAgSe attains a maximum power factor of 6.40 μW cm−1 K−2 at 847 K. In addition, a peak zT value of 0.97 at 847 K is achieved, combined with only a marginally decreased thermal conductivity, thereby exhibiting a prominent improvement over that of the pure SnSe sample. The present work opens up a new perspective for optimizing the thermoelectric performance of SnSe compounds with the strategy of tuning the content of Sn and alloying with CuAgSe.
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产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2024
·
IF 5.7
Zhiping Liang,Run Hao,Hualong Luo,Zhenming He,Liumei Su,Xing Fan
Layered SnSe in nanostructures has recently attracted growing interest in photonics, optoelectronics, photocatalysis, energy storage, and biomedicine because of its suitable band gap, excellent light absorption capacity, and considerable carrier mobility. However, the applications of SnSe in high-performance photoelectrochemical (PEC) devices are greatly hindered due to high-density defects, which lead to its high recombination of charge carriers and environmental instability. In this contribution, we have adopted a doping strategy to enhance the photo-response properties of a SnSe-based PEC photodetector. The as-prepared Ga-doped SnSe nanostructure shows a remarkable increase in photocurrent density, stable on–off cyclicity, fast photo-response behavior, and higher specific detectivity compared to the pristine SnSe. Based on structure characterization, composition analysis, and DFT calculations, the substitution of Sn by Ga in the lattice gives rise to changes in the electronic structure and optical absorption, endowing Ga-doped SnSe with a metal-like feature. Such a doping strategy can provide fundamental support in the development of SnSe-based devices and pave the way for PEC applications.
研究领域:
光子学
·
光电学
·
光催化
·
能量存储
·
生物医学
✓ 已验证
DOI
高影响因子
Nature Communications
·
2024
·Vol. 15
·期 1
·1-13
·
IF 14.7
Gong Yaru,Dou Wei,Lu Bochen,Zhang Xuemei,Zhu He,Ying Pan,Zhang Qingtang,Liu Yuqi,Li Yanan,Huang Xinqi,Iqbal Muhammad Faisal,Zhang Shihua,Li Di,Zhang Yongsheng,Wu Haijun,Tang Guodong
N -type polycrystalline SnSe is considered as a highly promising candidates for thermoelectric applications due to facile processing, machinability, and scalability. However, existing efforts do not enable a peak ZT value exceeding 2.0 in n -type polycrystalline SnSe. Here, we realized a significant ZT enhancement by leveraging the synergistic effects of divacancy defect and introducing resonance level into the conduction band. The resonance level and increased density of states resulting from tungsten boost the Seebeck coefficient. The combination of the enhanced electrical conductivity (achieved by increasing carrier concentration through WCl 6 doping and Se vacancies) and large Seebeck coefficient lead to a high power factor. Microstructural analyses reveal that the co-existence of divacancy defects (Se vacancies and Sn vacancies) and endotaxial W- and Cl-rich nanoprecipitates scatter phonons effectively, resulting in ultralow lattice conductivity. Ultimately, a record-high peak ZT of 2.2 at 773 K is achieved in n -type SnSe 0.92 + 0.03WCl 6 .
研究领域:
材料科学
·
热电学
·
固体物理学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Rong Li,Chong-yu Wang,Qiu-Yu Luo,Ze Li,Xing Yang,Wang-Qi Bao,Yi-Xin Zhang,Jing Feng,Zhenhua Ge
Lead-free SnSe2 materials have intrinsic low thermal conductivities and are promising thermoelectrics. However, their relatively low electrical conductivity limits the improvement of thermoelectric performance. This study successfully introduced halogen elements (X = F, Cl, Br, and I) into SnSe2 to increase carrier concentration for better thermoelectric performance. The defect formation energy calculation results showed the lowest value for SeCl, indicating that incorporating Cl into the SnSe2 matrix could achieve higher thermoelectric performance. Experimental results further verified this conclusion. At 323 K, the electrical conductivity for the SnSe1.94Cl0.06 sample was 86 S cm–1, 61 times higher than that of pristine SnSe2. Combined with the DFT calculation results, the decreased bandgap of the Cl-doped sample benefitted the transport of carriers. Due to the increased electrical conductivity, a peak power factor value of 457μW m–1 K–2 was achieved at 473 K. Meanwhile, the formed point defects decreased the lattice thermal conductivity to 0.38 W m–1K–1 at 773 K, 14% lower than that of the pristine SnSe2 sample. Consequently, the SnSe1.97Cl0.03 sample obtained a peak ZT value of 0.63 at 773 K, five times higher than that of pristine SnSe2. This strategy of thermoelectric performance optimization through the introduction of halogen elements can be applied to other thermoelectric material systems.
研究领域:
材料科学
·
热电材料
·
固体物理
·
缺陷工程
·
能量转换材料
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）