Small Methods
·
2021
·Vol. 5
·期 9
·2100437
·
IF 14.188
Xiaoyu Gao,Yixi Kuai,Zhixin Xu,Yongjie Cao,Nan Wang,Shin-ichi Hirano,Yanna Nuli,Jiulin Wang,Jun Yang
Metal selenides have attracted increasing attention recently as anodes for sodium-ion batteries (SIBs) because of their large capacities, high electric conductivity, as well as environmental benignity. However, the application of metal selenides is hindered by the huge volume variation, which causes electrode structure devastation and the consequent degrading cycling stability and rate capability. To overcome the aforementioned obstacles, herein, SnSe 2 /FeSe 2 nanocubes capsulated in nitrogen-doped carbon (SFS@NC) are fabricated via a facile co-precipitation method, followed by poly-dopamine wrapping and one-step selenization/carbonization procedure. The most remarkable feature of SFS@NC is the ultra-stability under high current density while delivering a large capacity. The synergistic effect of dual selenide components and core-shell architecture mitigates the volume effect, alleviates the agglomeration of nanoparticles, and further improves the electric conductivity. The as-prepared SFS@NC nanocubes present a high capacity of 408.1 mAh g −1 after 1200 cycles at 6 A g −1 , corresponding to an 85.3% retention, and can achieve a capacity of 345.0 mAh g −1 at an extremely high current density of 20 A g −1 . The outstanding performance of SFS@NC may provide a hint to future material structure design strategy, and promote further developments and applications of SIBs.
研究领域:
材料科学
·
能量存储
·
纳米技术
·
电化学
✓ 已验证
DOI
高影响因子
ENERGY & FUELS
·
2021
·
IF 3.605
Liang Wu,Tao Ma,Yi Li,Yuan Yang,Hui-Hui Li,Shu-Hong Yu
Two-dimensional (2D) IV–VI nanomaterials have been important candidates for energy conversion and storage. However, there is still lack of a simple method of realizing control synthesis of IV–VI nanosheets. In this work, single-crystalline tin diselenide (SnSe2) nanosheets with a thickness of ca. 9 nm and a micrometer lateral size have been successfully synthesized through a hot-injection colloidal method. An evolution process study indicates that SnSe2 nanosheets are synthesized through coalescence of SnSe2 nanoparticles in an orientation attachment mechanism. The obtained SnSe2 nanosheet anodes delivered a high reversible capacity of 512 mA h g–1 with a coulombic efficiency of 98% at the current density of 0.1 A g–1, attributed to their special layered nanoarchitectures, which facilitates lithium ion (Li+) interfacial diffusion and storage. This work provides a meaningful approach to synthesizing single-crystalline 2D nanomaterials for energy storage applications.
研究领域:
材料科学
·
能源存储
✓ 已验证
DOI
高影响因子
Journal of Semiconductors
·
2024
·Vol. 45
·期 3
·032703
·
IF 4.8
Xinfa Zhu,Weishuai Duan,Xiancheng Meng,Xiyu Jia,Yonghui Zhang,Pengyu Zhou,Mengjun Wang,Hongxing Zheng,Chao Fan
The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe2 heterostructure exhibits a significant responsivity of 4.99 × 103 AW−1, normalized detectivity of 5.80 × 1012 cmHz1/2W−1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe2 heterostructure are 5.91 × 103 AW−1, 7.03 × 1012 cmHz1/2W−1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe2, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe2-based photodetectors and paves the way for their future commercialization.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2025
·
IF 3.4
Yue Liu,Huan-Yan Xu,Bo Li
Piezoelectric materials provide new avenues for driving the catalytic degradation of organic pollutants by harvesting mechanical energy, but high carrier recombination is a major obstacle to improving piezoelectric catalytic efficiency. Heterojunction construction is one of the effective strategies used to inhibit carrier recombination. Especially, the lateral heterostructure can solve the problem of the decline in piezoelectric performance caused by vertical heterojunctions in two-dimensional materials. Here, a pioneering SnSe2/SnSe lateral heterojunction was fabricated by epitaxially growing SnSe2 along the edge of a SnSe nanosheet through a combination strategy of HNO3 exfoliation and calcination. Compared with SnSe, the SnSe2/SnSe heterojunction displayed much higher piezocatalytic activity for the degradation of various antibiotics in water. Based on the radical trapping experiments and electron paramagnetic resonance characterizations, superoxide radicals were identified as the dominant reactive oxygen species. The piezoelectric properties and electronic band structures of SnSe and SnSe2/SnSe were analyzed by piezoresponse force microscopy combined with density functional theory calculations. The enhancement mechanism of piezocatalytic performance of the SnSe2/SnSe heterojunction was elucidated, and a II-scheme charge transfer mechanism at the SnSe2/SnSe interface driven by a built-in electric field was put forward. This work will enrich the development of piezoelectric catalysis technology and provide new ideas for the design of heterostructured piezocatalysts.
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2026
·
IF 4.4
Zou Mingxuan,Gao Zhuo,Pan Mingyue,Teng Feng,Fan Haibo,Song Jiaming,Jiao Yang,He Xuexia,Hu Peng
Sb 2 Se 2 Te is a novel ternary V–VIA topological insulator, which shows significant potential as a material for optoelectronic devices. In this work, the Ag-Sb 2 Se 2 Te/SnSe 2 heterojunction-based PEC photodetector was fabricated using a two-step drop-coating method. The obtained photodetector has a responsivity of 71.94 μA W −1 at 0 V bias under 400 nm illumination, which is about 30 times higher than that of the Sb 2 Se 2 Te photodetector. Furthermore, the photodetectors exhibited an increased responsivity of 283.49 μA W −1 at a bias voltage of −0.2 V. The performance enhancement is attributed to the Ag modification and formation of a Z-scheme heterojunction, which facilitates the light absorption and efficient charge separation and transfer. This study provides a potential strategy for designing high-performance ternary V-VIA semiconductor-based photodetectors. Graphical In this study, the Ag-Sb 2 Se 2 Te/SnSe 2 heterojunction-based PEC photodetector was fabricated using a two-step drop-coating method. The Ag-Sb 2 Se 2 Te/SnSe 2 heterostructure achieves a photocurrent density and responsivity of 1.11 μA cm −2 and 71.94 μA W −1 at 0 V bias under 400 nm illumination, which shows ~ 28 times and ~ 34 times increase compared to the Sb 2 Se 2 Te based photodetectors, respectively. This study provides a potential strategy for designing high-performance ternary V-VIA semiconductor-based photodetectors.
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2022
·
IF 6.959
Jiayong Zhang,Bin Yao,Zhanhui Ding,Yongfeng Li
The performance stability of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is one of the key issues for its commercialization. Currently, Cu+ and Cu2+ salts have been successfully used to prepare CZTSSe solar cells, but comparative studies on the performance stability of the two types of solar cells are scarce. In this work, the performance degradation processes of CZTSSe solar cells, stored for 249 days under dry conditions, prepared respectively with Cu2+ and Cu+ salts (denoted Cu2+-cell and Cu+-cell, respectively) are investigated. It is found that the Cu+-cell has a higher initial PCE but worse performance stability than the Cu2+-cell. By calculation of the contribution percentage of VOC, JSC, and FF to the PCE and JL, Rs, Rsh, and (A, J0) to VOC, JSC, and FF for the two types of solar cells with the best initial PCE, it is concluded that the contribution percentages of JL, Rs, Rsh, and (A, J0) to a decreased PCE for the Cu2+-cell are nearly equal, while the decreased PCE for the Cu+-cell dominantly comes from a greatly decreased Rsh and sharply increased J0. The great decrease in Rsh is due to the formation of SnSe2, which may result from its chemical reaction pathway to fabricate the CZTSSe absorber. The sharp increase in J0 may be attributed to the formation of SnZn antisite defects. This work indicates that it is important to consider the Cu oxidation state of the salts to improve the stability of solution-processed CZTSSe solar cells.
研究领域:
材料科学
·
可再生能源
·
光电转换
✓ 已验证
产品关联
DOI
高影响因子
ACS Omega
·
2020
·
IF 2.87
Jiahao Wang,Xianbin Jia,Shiyun Lou,Guihui Li,Shaomin Zhou
There are many studies concentrated on high-temperature performance of SnSe2, but few studies were conducted on low-temperature properties of embedded SnSe2. In this work, a series of SnCuxSe2 (x = 0, 0.01, 0.02, and 0.05) layered structures have been successfully synthesized by a melt quenching, mechanical milling process, and spark plasma sintering (SPS) method. Meanwhile, the thermal and electrical transport properties of all synthesized samples are measured. These results suggest that the embedding of Cu into SnSe2 results in a high carrier concentration (1019/cm3). In addition, the enhancement of defect and interfacial phonon scattering caused by Cu embedding as well as the weak van der Waals force between layers makes a low thermal conductivity (0.81 W/mK) for the SnCu0.01Se2 at 300 K. Moreover, the maximum ZT is acquired up to 0.75 for the SnCu0.01Se2 sample at 300 K, which is about 2 orders of magnitude higher than the pristine sample (0.009). These features indicate that Cu-embedded SnSe2 can be a promising thermoelectric material at gentle temperature.
研究领域:
材料科学
·
热电学
·
固体物理
·
纳米材料
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Yuhua Zhang,Chuchu Cheng,Fangshu Xing,Ze Li,Caijin Huang
Semiconductor heterostructures effectively promote the transfer and separation of interfacial photoinduced charges for the photocatalytic process. Herein, we constructed a direct Z-scheme SnSe2/CdS heterojunction photocatalyst. N-type SnSe2 semiconductors are suitable candidate materials for oxidation half-reactions in Z-scheme heterojunctions. The intimate atomic-level interfacial contact through Cd–Se bonds provides a better interfacial charge transport channel for the photoinduced charges. Moreover, the transient Sn4+/Sn0 centers caused by the photoredox process boost the interfacial charge transport/separation at the interface. Besides, the presence of S vacancies acting as electron enrichment centers further enhances the redox ability for hydrogen production. Therefore, the SnSe2/CdS heterostructure showed a superior visible-light photocatalytic H2-production activity of 13.6 mmol·g–1·h–1 using ascorbic acid as a sacrificial agent, which is 9.7 times higher than that of pristine CdS. The apparent quantum yield reaches 10.5% at λ = 420 nm. This work provides a useful way to improve charge transfer in the Z-scheme heterojunction photocatalyst for hydrogen production.
研究领域:
材料科学
·
光催化化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF NANOPARTICLE RESEARCH
·
2022
·Vol. 24
·期 6
·1-10
·
IF 2.533
Xu Hui-Hong,Zhou Ning-Ning,Liang Xiao-Long,Jiang Tian-Tian,He Wen-Tao,Song Ji-Ming
Tin selenide (SnSe) with an orthorhombic system has recently become a hot spot in the thermoelectric field owing to its low thermal conductivity and high melting point. In this work, P-type SnSe nanoparticles with a mean diameter ca.20–25 nm have been synthesized first by a facile liquid-phase method. Interestingly, the synthesized SnSe nanoparticles have transformed from an intrinsic P-type to an N-type semiconductor after being annealed due to the generation of SnSe 2 secondary phase. The SnSe samples have been characterized by XRD, SEM, XPS, TEM, laser flash, and BET, and the results show that the nanostructure and the presence of SnSe 2 secondary phase enhance phonon scattering effect leading to freshly formed N-type SnSe that has an ultra-low lattice thermal conductivity and a low total thermal conductivity (0.368 Wm −1 K −1 , 0.393 Wm −1 K −1 ) at 723 K. Obviously, this work provides a new way to obtain an N-type SnSe nanomaterial with ultra-low lattice thermal conductivity. Graphical abstract The nano-scale P-type SnSe semiconductor material has been synthesized by a liquid phase method, then has been transformed into an N-type semiconductor after being annealed. The obtained N-type SnSe nanopaticles had an ultra-low lattice thermal conductivity with good stability and repeatability, 0.368 Wm −1 K −1 at 723 K.
研究领域:
材料科学
·
热电材料研究
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Zhen Tian,Mingxing Zhao,Xiongxiong Xue,Wei Xia,Chenglei Guo,Yanfeng Guo,Yexin Feng,Jiamin Xue
Different two-dimensional (2D) materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensive research efforts have been devoted to their fabrication and characterization. Previously, vertical and in-plane 2D heterostructures have been formed by mechanical stacking and chemical vapor deposition. Here, we report a new material system that can form in-plane p–n junctions by thermal conversion of n-type SnSe2 to p-type SnSe. Through scanning tunneling microscopy and density functional theory studies, we find that these two distinctively different lattices can form atomically sharp interfaces and have a type II to nearly type III band alignment. We also demonstrate that this method can be used to create micron-sized in-plane p–n junctions at predefined locations. These findings pave the way for further exploration of the intriguing properties of the SnSe2–SnSe heterostructure.
研究领域:
材料科学
·
纳米技术
·
凝聚态物理
·
半导体器件
✓ 已验证
DOI
高影响因子
IONICS
·
2020
·Vol. 26
·期 6
·2855-2862
·
IF 2.394
Cheng Yayi,Huang Jianfeng,Cao Liyun,Xie Hui,Wang Yongfeng,Wang Yanlong,Wu Hongqiang,Xi Shaohua,Li Jiayin
SnSe 2 is regarded as one of the promising anode materials for the advanced lithium ion batteries (LIBs) due to its high theoretical capacity and good conductivity. In this work, SnSe 2 with controllable structure is synthesized by a facile solvothermal method and the influence of reductant on the morphology is revealed. It is found that interconnected SnSe 2 nanosheet assembled by ultrafine nanoparticles exhibits excellent electrochemical performance. As LIBs anode material, the SnSe 2 nanosheet delivers a high initial reversible capacity of 932 mAh g −1 with the coulombic efficiency of 75.2% at 200 mA g −1 , remaining at 334 mAh g −1 over 200 cycles. This highly reversible capacity and cycling stability are mainly ascribed to its special interconnected thin nanosheets structure, which could provide a three-dimensional network paths for ultrafast charge transfer.
研究领域:
材料科学
·
能源存储与转换
✓ 已验证
产品关联
DOI
高影响因子
iScience
·
2026
·
IF 4.5
Liying Wen,Dongsheng Hu,Ruihong Zhang,Xiaoxiang Hu,Yan Luo,Hui Chen,Yifang Liang,Yong Li,Shifeng Wang
Two-dimensional materials have attracted much attention due to their unique structures and excellent optoelectronic properties. In this work, we fabricated c-axis-aligned SnSe 2 /Bi 2 Se 3 2D heterostructures via a hydrothermal technique, where the epitaxial growth of Bi 2 Se 3 nanoplates is achieved on SnSe 2 microplate substrates. The electronic states at the interfaces can be regulated facilely via tuning the Bi 2 Se 3 nanoplate coverage. The heterostructure not only increases the wavelength range over which light is absorbed, but also promotes the separation and migration of photo-excited charge carriers. Therefore, the heterostructure-based photodetector attains a photoresponse that outperforms those devices composed of pure SnSe 2 and Bi 2 Se 3 by a factor of 3.0 and 4.9, respectively. Furthermore, the optimal heterostructure generates a photocurrent of 289 μA cm -2 under ultraviolet illumination, which surpasses those of recently reported state-of-the-art photodetectors. Accordingly, this work establishes an effective approach for developing low-cost, high-perfomance optoelectronic devices based on 2D chalcogenides.
✓ 已验证
产品关联
DOI
高影响因子
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