JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2021
·
IF 8.067
Ximeng Dong,Wenlin Cui,Wei-Di Liu,Shuqi Zheng,Lei Gao,Luo Yue,Yue Wu,Boyi Wang,Zipei Zhang,Liqiang Chen,Zhi-Gang Chen
As an eco-friendly thermoelectric material, SnTe has attracted extensive attention. In this study, we use a stepwise strategy to enhance the thermoelectric performance of SnTe. Firstly, AgCl is doped into SnTe to realize band convergence and enlarge the band gap of AgCl-doped SnTe. AgCl-doping also induces dense point defects , strengthens the phonon scattering, and reduces the lattice thermal conductivity . Secondly, Sb is alloyed into AgCl-doped SnTe to further optimize the carrier concentration and simultaneously reduce the lattice thermal conductivity , leading to improved thermoelectric dimensionless figure of merit, ZT . Finally, (Sn 0.81 Sb 0.19 Te) 0.93 (AgCl) 0.07 has approached the ZT value as high as ∼0.87 at 773 K, which is 272 % higher than that of pristine SnTe. This study indicates that stepwise AgCl-doping and Sb-alloying can significantly improve thermoelectric performance of SnTe due to synergistic band engineering, carrier concentration optimization and defect engineering.
研究领域:
材料科学
·
热电学
✓ 已验证
DOI
高影响因子
Inorganics
·
2026
·Vol. 14
·期 7
·194
·
IF 3.4
Lin Bo,Yongpeng Wang,Wenying Wang,Wenying Zhou,Xingshuo Liu,Laizeng Shi,Degang Zhao
Incorporating a secondary phase represents a promising strategy for enhancing the thermoelectric performance of materials. In this study, CuInTe2was modified with SnTe powders at various weight fractions (0, 0.5, 1, 2, 4 wt%) and subsequently synthesized via rapid microwave melting. The phase composition and microstructure of the resulting materials were systematically characterized. Structural analyses revealed that the introduction of SnTe induced the incorporation of Sn and Te into the CuInTe2lattice, accompanied by a progressive contraction in lattice parameters. Owing to the spontaneous formation of intrinsic Sn vacancies in SnTe and the regulation of carrier concentration, electrical conductivity of up to 2.7 × 104Sm−1was achieved, representing a 1.7-fold increase over pristine CuInTe2. Coupled with a notable reduction in lattice thermal conductivity (0.9 Wm−1K−1at 700 K), a maximum figure of merit of 0.44 was obtained for the CuInTe2-2 wt% SnTe sample. While the absolutezTvalue is moderate compared to state-of-the-art CuInTe2-based materials, this work establishes the feasibility of microwave melting combined with second-phase incorporation as a rapid and energy-efficient synthesis pathway for CuInTe2modification. These results demonstrate that the introduction of SnTe is a viable strategy for enhancing the thermoelectric performance of CuInTe2.
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DOI
高影响因子
ACS Applied Energy Materials
·
2023
·
IF 6.4
Yaning Wang,Yi Yuan,Ruiming Yang,Meiling Li,Tie Liu,Masahiro Tahashi,Qiang Wang
SnTe, a nontoxic thermoelectric (TE) material, has attracted considerable attention due to its lead-free rock-salt, which is comparable to PbTe. In this study, an alloying strategy is used to embed MnSe in the SnTe matrix, which results in synergistic effects of valence-band convergence and defect engineering. The MnSe-alloyed SnTe achieves an excellent thermoelectric performance. Mn- and Se-substitutions of Sn and Te sites, respectively, induce the convergence of valence bands and increase the Seebeck coefficients of samples, which lead to competitive power factors. In addition, the numerous defects introduced by alloying with MnSe act as phonon scattering sources to effectively lower the lattice thermal conductivity. The SnTe–10%MnSe sample exhibited a lattice thermal conductivity of 0.44 W m–1 K–1 at 823 K. Ultimately, the SnTe–8%MnSe sample achieved a figure of merit of 1.02, which was 276% higher than that of undoped SnTe. This study offers an approach to enhancing Te-based thermoelectric materials with low lattice thermal conductivity and to advancing the fundamental understanding of SnTe.
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DOI
高影响因子
Nanomaterials
·
2026
·Vol. 16
·期 12
·715
·
IF 4.8
Wendi Xu,Jia Zhang,Junjie Xie,Tianzhu Xu,Jia Wu,Hong Wang
Physical unclonable function (PUF) based on intrinsic device randomness has emerged as promising hardware security primitives, yet combining secure encryption with neuromorphic recognition within a single device platform remains challenging. Here, we demonstrate a photosensing PUF based on an intrinsically random SnTe memristor capable of both image encryption and memristive neural network recognition. The SnTe memristor, fabricated with an In2O3:SnO2/SnTe/Nb:SrTiO3structure, exhibits stable resistive switching and stable retention exceeding 4000 s. Synaptic biomimetic behaviors including learning-experience emulation, short-term plasticity and long-term plasticity are also realized. Notably, the device displays pronounced optical sensitivity that produces stochastic photocurrent fluctuations originating from unavoidable device-to-device variations under illumination. By quantizing these random photocurrents, an encryption key stream is generated and utilized for image scrambling and diffusion. A memristive neural network is constructed to classify the encrypted images, achieving a recognition accuracy of 95.1% with a loss of 0.15 after 300 training epochs. This work establishes a viable pathway from intrinsic optical randomness to secure neuromorphic computing, highlighting the multifunctional potential of SnTe memristors in integrated hardware security and brain-inspired computation.
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DOI
PubMed
高影响因子
Journal of Thermal Science
·
2026
·
IF 3.2
Hu Yang,Nie Yi’nan,Xin Nan,Li Yifei,Zhao Xin,Zhang Min,Tang Guihua
The simultaneous realization of efficient thermal insulation and waste heat harvesting remains a pivotal challenge in advanced thermal management and sustainable energy systems. Although thermoelectric aerogels offer a promising solution, their performance is traditionally constrained by the strong coupling among the Seebeck coefficient, electrical conductivity, and thermal conductivity. To overcome this limitation, this study demonstrates a synergistic strategy combining directional structural design with the incorporation of a high-Seebeck-coefficient thermoelectric phase. Using low-cost flake graphite as the conductive skeleton and SnTe as the active thermoelectric phase, SnTe-graphite composite aerogels (ST-GCAs) with highly anisotropic architectures were fabricated via directional freeze drying and carbonization. The results reveal that the anisotropic structure effectively decouples transport properties, endowing the material with high electrical conductivity parallel to the freezing direction and superior thermal insulation perpendicular to it. Notably, the incorporation of SnTe facilitates a transition from a metallic to a semiconducting transport mechanism, significantly enhancing the Seebeck coefficient. Consequently, the optimal sample maintains an ultra-low vertical thermal conductivity of 0.093 W·m −1 ·K −1 at room temperature, while achieving a Seebeck coefficient of 77.77 µV·K −1 and a ZT value of 0.02 at 973 K, representing an enhancement of approximately one order of magnitude (15.5 times) compared to the pristine GCA. This work provides a scalable route for developing lightweight, high-temperature-resistant composite materials capable of simultaneous high-efficiency thermal insulation and thermoelectric energy conversion.
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2018
·
IF 3.779
Dongyang Wang,Xiao Zhang,Yong Yu,Lin Xie,Jinfeng Wang,Guangtao Wang,Jiaqing He,Yuling Zhou,Qiantao Pang,Jianwei Shao,Li-Dong Zhao
In this work, we report that the high performance of SnTe could be realized by enhancing electrical transport properties (power factor) and reducing thermal conductivity through stepwisely introducing elements of Sb, In and Se. We found that Sb and In co-doping can enhance Seebeck coefficients in the broad temperature range via optimizing carrier density and introducing resonant state, respectively. Moreover, nanostructures could be formed when the Sb content beyond the solubility limit in SnTe matrix, which coupled with point defects from In and Se alloying result in a very low (lattice) thermal conductivity through the enhanced phonon scattering from defects and grain boundaries. A peak ZT ∼1.0 at 923 K can be achieved with the enhanced power factor and reduced thermal conductivity. Accordingly, the average ZT value increases from ∼0.20 for undoped SnTe to ∼ 0.60 for multiple-doped SnTe (Sn 0.823 Sb 0.17 In 0.007 Te 0.98 Se 0.02 ) over 300–923 K, generating a high calculated conversion efficiency ∼ 11%. Present results indicate the high performance of SnTe can be obtained through stepwisely optimizing strategy in both electrical and thermal transport properties.
研究领域:
材料科学
·
热电转换
✓ 已验证
产品关联
DOI
高影响因子
CRYSTAL GROWTH & DESIGN
·
2025
·
IF 3.4
Jingdan Lei,Chunhui Wang,Xiaoyun Yang,Huijuan Geng,Xu-Jin Ge,Xinxin Wang,Shengqiang Cui,Yajing Wang,Gui Yang,Chao Wang
Recently, AgCuTe has garnered growing interest as a promising superionic conductor. Herein, we investigated the thermoelectric property changes induced by introducing SnTe into AgCuTe. The introduction of SnTe enabled a nearly 20% enhancement in the Seebeck coefficient. Combining with the relatively high electrical conductivity, a power factor of 9.3 μW cm–1 K–2 was achieved at 723 K. Particularly, by introducing SnTe into AgCuTe, multiple-scale defects including atomic-scale lattice disorder, nanoprecipitates, and micrometer-scale grain boundaries were constructed as an effective hierarchical phonon scattering mechanism. Owing to the scattering of full-wavelength phonons, we yielded a low lattice thermal conductivity of 0.2 W m–1 K–1, which approached the amorphous limits. Consequently, a maximum zT up to 1.1 was obtained at 723 K for AgCuTe–3 wt % SnTe, which was nearly 40% higher than that of pristine AgCuTe.
研究领域:
材料科学
·
热电学
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
CHEMISTRY OF MATERIALS
·
2022
·
IF 10.508
Chong Wang,Yaru Gong,Wenjie Xiong,Xiaoyu Yang,Qingtang Zhang,Yuqi Liu,Shuang Li,Xinqi Huang,Di Li,Dewei Zhang,Pengfei Nan,Binghui Ge,Guodong Tang
SnTe, emerging as a promising lead-free thermoelectric candidate, has received a great deal of attention for power generation. Here, we report a record-high average ZT of 1.02 as well as a high peak ZT of ∼1.5 through the V/Sb and AgSbTe2 alloying approach in SnTe. We demonstrate that the aggregation of V interstitials promotes the formation of dense dislocation arrays and dislocation networks, which effectively scatters heat-carrying phonons and contributes to an extremely low κL of ∼0.41 W m–1 K–1. More importantly, V interstitials provide pinning effects to dislocation motion, indicating the high stability of our materials at elevated temperatures. Also, V interstitials and Ag alloying facilitate band convergence in SnTe, resulting in a remarkable enhancement of the Seebeck coefficient. The carrier concentration can be tuned to an optimal level. The power factor sharply increases over the whole temperature range due to band convergence induced by Ag incorporation and optimized carrier concentration. Benefits of the decoupling of electron and phonon transport, such as high average ZT and peak ZT, can be realized, making SnTe an attractive candidate for highly effective solid-state thermoelectric devices.
研究领域:
材料科学
·
热电学
·
固体物理
·
能量转换
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Wenjing Xu,Hengquan Yang,Chengyan Liu,Zhongwei Zhang,Chunguang Chen,Zhenyuan Ye,Zhao Lu,Xiaoyang Wang,Jie Gao,Junliang Chen,Zhengchuan Xie,Lei Miao
As a lead-free thermoelectric material, SnTe is inhibited by its inherent high carrier concentration and high thermal conductivity. This work describes the synergistic effect on the modulation of band structure and microstructural defects of SnTe by Ag and Y codoping, which gives rise to band convergence and multiple microstructural defects (secondary phases, dislocations, and boundaries) in the matrix and endows Sn0.94Ag0.09Y0.05Te with an increased power factor of ∼2485 μW m–1 K–2, an extremely low lattice thermal conductivity of ∼0.61 W m–1 K–1, and a peak zT as high as ∼1.2 at 873 K. This work reveals that the combination of Ag and Y could play a role in the synergistic optimization of electronic and phonon transport properties of SnTe by modifying the band structure and microstructures, providing guidance for enhancing the thermoelectric performance of the relevant materials.
研究领域:
材料科学
·
热电学
·
半导体物理
·
能源材料
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2023
·Vol. 11
·期 8
·4310-4318
·
IF 11.9
Huihong Xu,Han Wan,Rui Xu,Zeqing Hu,Xiaolong Liang,Zhou Li,Jiming Song
Alloying SnTe with a well-designed secondary phase, particularly one with low lattice thermal conductivity, serves as an efficient route to realize excellent thermoelectric performance of inferior SnTe with intrinsically large thermal conductivity, which will eventually accelerate PbTe replacement. Herein, the results validate that CuSbSe2 alloying (SnTe-CuSbSe2) can optimize the thermal transport properties of SnTe and help to advance the thermoelectric performance. Comprehensive evidence from microstructure characterization manifests that multifarious defects, such as Cu-based nanoprecipitates, dislocations and point defects, are induced into the SnTe matrix after CuSbSe2 alloying. These defects act as all-scale phonon scattering sources to achieve full-wavelength phonon scattering and promote a significant reduction in lattice thermal conductivity, and an ultra-low lattice thermal conductivity of 0.40 W m−1 K−1 is obtained for the SnTe-5% CuSbSe2 sample at 823 K. Moreover, deterioration in electrical conductivity also causes a related reduction in electronic thermal conductivity, thereby leading to a substantial reduction in the total thermal conductivity. In addition, the enhancement of m* originating from Cu and Sb doping rises the Seebeck coefficient in SnTe and guarantees a relatively competitive power factor. As a result, based on the significant reduction in the total thermal conductivity, as well as maintenance of the higher power factor, the SnTe-5% CuSbSe2 sample achieves a maximum ZT value of 1.1 at 823 K, which is greatly improved compared with the pristine counterpart (ZT = 0.5). These findings also reveal the tremendous prospect of boosting the thermoelectric performance of SnTe through CuSbSe2 and other I–V–VI2 compounds alloying.
研究领域:
材料科学
·
热电学
·
固体物理
·
能源材料
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Wenqi Zheng,Dan Feng,Mingrui Zhang,Mengqi Li,Weishuai Wang,Fudong Zhang,Zupei Yang,Di Wu
Entropy engineering is becoming a crucial strategy for enhancing the performance of thermoelectric materials, as increasing configurational entropy can influence the phase structure and localized microstructure profoundly. SnTe, as a lead-free alternative to PbTe, has drawn intensive attention for decades. Despite the outstanding maximal figures of merit have been reported in SnTe-based alloys, the average figure of merit across the working temperature range still stays at quite a low level as compared to PbTe-based materials. In this work, based on the SnTe-based Sn1–xGexTe solid solution, we increased its configurational entropy to the medium-entropy range (1.0R < ΔS < 1.5 R) by Sb2Te3 alloying and Pb doping. Increasing configurational entropy substantially enlarged the effective mass of charge carriers while significantly reducing the lattice thermal conductivity, thereby realizing effective decoupling between electrical and thermal transports. As a result, we achieved a maximal ZT value of 1.31 at 723 K with an impressively high average ZT value of 0.89 across 323–773 K in the sample (Sn0.5Ge0.425Pb0.075Te)10Sb2Te3. This work offers a generalizable methodology for designing high-performance thermoelectric materials.
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DOI
PubMed
高影响因子
Materials
·
2024
·Vol. 17
·期 19
·4809
·
IF 3.1
Yaqi Zhang,Feng Guo,Huan Zhang,Mingming Zhang,Jianxiu Su,Zhengxin Li
High-conductivity tellurium-based glasses were anticipated to be the attractive candidates in chalcogenide glass systems on account of their distinctive characteristics and extensive application prospects. In this paper, the high-density (>96%) Sn8[(Ga2Te3)34(SnTe)66]92bulk glass with the density of 5.5917 g/cm3was successfully prepared by spark plasma sintering (SPS) technology at 460 K, using a 5 min dwell time and 450 MPa pressure. The room-temperature thermal conductivity of Sn8 bulk materials significantly decreased from 1.476 W m−1∙K−1in the crystalline sample to 0.179 W m−1∙K−1in the glass, and the Seebeck coefficient obviously increased from 35 μV∙K−1in to 286 μV∙K−1, indicating that the glass transition of tellurium-based semiconductors could optimize the thermal conductivity and Seebeck coefficient of the materials. Compared to the conventional tellurium-based glassy systems, the fabricated Sn8 bulk glass presented a high room-temperature conductivity (σ =6.2 S∙m−1) and a large glass transition temperature (Tg=488 K), which was expected to be a promising thermoelectric material.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）