Nanoscale Advances
·
2022
·Vol. 5
·期 3
·693-700
·
IF 5.598
Hailin Yang,An Wu,Huaxin Yi,Weiwei Cao,Jiandong Yao,Guowei Yang,Yi-Chao Zou
Two-dimensional (2D) magnetic materials are of wide research interest owing to their promising applications in spintronic devices. Among them, chromium chalcogenide compounds are some of the limited available systems that present both high stability in air and high Curie temperatures. Epitaxial growth techniques based on chemical vapour deposition (CVD) have been demonstrated to be a robust method for growing 2D non-layered chromium chalcogenides. However, the growth mechanism is not well-understood. Here, we demonstrate the epitaxial growth of Cr3Te4 nanoplates with high quality on mica. Atomic-resolution scanning transmission electron microscopy (STEM) imaging reveals that the epitaxial growth is based on nanosized chromium oxide seed particles at the interface of Cr3Te4 and mica. The chromium oxide nanoparticle exhibits a coherent interface with both mica and Cr3Te4 with a lattice mismatch within 3%, suggesting that, as a buffer layer, chromium oxide can release the interfacial strain, and induce the growth of Cr3Te4 although there is a distinct oxygen-content difference between mica and Cr3Te4. This work provides an experimental understanding behind the epitaxial growth of 2D magnetic materials at the atomic scale and facilitates the improvement of their growth procedures for devices with high crystalline quality.
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DOI
高影响因子
Frontiers in Materials
·
2021
·
IF 3.515
Xu Yubing,Wang Xin,Zhao Jingda,Pan Yuzhu,Li Yuwei,Elemike Elias Emeka,Li Qing,Zhang Xiaobing,Chen Jing,Zhao Zhiwei,Akram Javed,Bae Byung Seong,Bin Suhaidi,Lei Wei
Recent years, organic-inorganic hybrid perovskites (OIHPs) have been widely used in applications, such as solar cells, lasers, light-emission diodes, and photodetectors due to their outstanding optoelectronic properties. Nowadays photodetectors based on perovskite films (PFs) suffer from surface and interface traps, which result from low crystalline quality of perovskite films and lattice mismatch between perovskite films and substrates. Herein, we fabricate MAPbI3 -(MA = CH3NH3) single-crystal films (SCFs) on MAPbBr3 single crystal substrates in MAPbI3 precursor solution during crystallization process via solution-processed epitaxy. Benefit from the good lattice matching, epitaxial MAPbI3 SCFs with high crystallinity and smooth morphology are of comparable quality to MAPbI3 PSCs and are of better quality than MAPbI3 polycrystalline films. Here we report that epitaxial MAPbI3 SCFs have a low trap density of 5.64×1011 cm–3 and a long carrier lifetime of 11.86 μs. In this work, photodetector based on epitaxial MAPbI3 single-crystal film (SCF) exhibits an excellent stability of a long-term stable response after 120 days, a fast response time of 2.21 μs, a high responsivity of 1.2 A W–1 and a high detectivity of 3.07 ×1012 jones.
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高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2018
·Vol. 28
·期 20
·1800181
·
IF 13.325
Bao Jin,Pu Huang,Qi Zhang,Xing Zhou,Xiuwen Zhang,Liang Li,Jianwei Su,Huiqiao Li,Tianyou Zhai
2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self-limited epitaxial growth of ultrathin nonlayered CdS flakes (as thin as 6 nm) on mica substrate with a large domain size (>40 µm) by employing In 2 S 3 as the passivation agent. Besides, the thickness and sizes of the products could be tunable by the addition level of In 2 S 3 amount. The growth mechanism is evidenced via experiments and theoretical calculations, which is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. The photodetector designed on CdS flake demonstrates a high photoswitching ratio (up to 10 3 ), a high detectivity ( D * ≈ 2.71 × 10 9 Jones), and fast photoresponse speed (τ R = 14 ms, τ D = 8 ms). The as-proposed self-limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials and will promote their further applications in novel optoelectronic devices.
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高影响因子
ACS Nano
·
2026
·
IF 17.3
Aoxuan Wang,Haoran Li,Zhibin Xu,Hao Chen,Xiaofan Lv,Yumeng Zhao,Dehua Xu,Zhenglin Hu,Qingtao Ma,Xingjiang Liu,Jiayan Luo
Abstract Lithium metal is considered as the ultimate anode for high-energy-density batteries, yet its practical realization is thwarted by dendrite proliferation and chemomechanical interfacial instability. While epitaxial growth on crystallographically textured substrates provides a template for ordered deposition, sustaining this ordered growth under high capacities and current densities remains a formidable kinetic challenge. Herein, we overcome this barrier by engineering an elastic (110)-oriented lithium anode (e-Li (110)) comprising a conductive polymer scaffold. The e-Li (110) integrates preferred (110) crystallographic orientation with a mechanically coupled strain corresponding to the optimized 4% tensile-strain condition. Consequently, this strain-engineering strategy enables a capacity of 30 mAh cm–2 and current density of 25 mA cm–2 before lithium epitaxial breakdown. 5.9 Ah Li || LiNi0.8Co0.1Mn0.1O2 (NCM811) pouch cells with a high energy density of 509.8 Wh kg–1 show 90% capacity retention after 140 cycles. In sulfide-based all-solid-state batteries (ASSBs), e-Li (110) anode enables stable cycling for over 1600 cycles at a rate of 5 C. By highlighting strain as a critical parameter, our work provides a strategy for mechano-electrochemical coupling in lithium metal anodes for high-rate, high-energy-density batteries.
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高影响因子
THIN SOLID FILMS
·
2026
·
IF 2
Jun-Cai Zhang,Hu Li,Jie Huang,Jin-Rui Cai,Zhi-Ping Huang,Li-Mei Lin,Chuan-Dong Zuo,Xin Jin,Gui-Lin Chen
Sb 2 S 3 has attracted much attention due to its high absorption coefficient, abundant elemental reserves and stable chemical properties. However, key issues such as interface recombination and poor energy level matching have restricted the improvement of device performance. This study investigated the effects of three electron transport layers (ETLs), CdS, TiO 2 and SnO 2 , on the hydrothermal quasi-epitaxial growth of Sb 2 S 3 . CdS could induce the formation of a continuous and dense Sb 2 S 3 film through S-Sb chemical bridge bonds, while TiO 2 and SnO 2 , due to their surface inertness, led to island-like growth of Sb 2 S 3 , accompanied by interface holes and defects. Device test results indicated that the device with CdS as the ETL had the best performance: power conversion efficiency (PCE) of 6.11 %, the lowest saturation current density ( J 0 ), and effective suppression of interface recombination. Devices with TiO 2 and SnO 2 as ETLs exhibited lower open-circuit voltage ( V oc ) and short-circuit current density ( J sc ), and poor device performance (2.82 % and 1.09 %) due to severe interface recombination. SCAPS-1D simulation further confirmed that CdS had significant advantages in energy level matching and interface defect control, making it the most suitable ETL among the three for the quasi-epitaxial growth of Sb 2 S 3 , providing a key reference for the development of high-efficiency Sb 2 S 3 solar cells.
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高影响因子
Small Methods
·
2019
·Vol. 3
·期 12
·1900349
·
IF 0
Ye Zhang,Feng Zhang,Yiguo Xu,Weichun Huang,Leiming Wu,Zhijun Dong,Yupeng Zhang,Biqing Dong,Xiuwen Zhang,Han Zhang
Heterojunctions, composed of different materials, are widely explored in optoelectronic devices thanks to their unique advantages, such as high carrier mobility and excellent photoelectronic characteristics. In this work, Bi 2 Se 3 /Te@Se heterojunctions (Bi 2 Se 3 /Te@Se) are synthesized through the epitaxial growth of Bi 2 Se 3 nanosheets (Bi 2 Se 3 NTs) on tellurium@selenium nanotubes (Te@Se NTs) by using a low-cost and facile solvothermal process. Bi 2 Se 3 /Te@Se are further applied in high-performance photoelectrochemical (PEC)-type photodetection due to the advantages of broadband optical response and fast carrier relaxation time. The PEC results demonstrate that the as-prepared photodetectors have pronounced photoresponse behavior from the ultraviolet to visible band with self-driven ability and excellent long-term stability. It is anticipated that this work provides a new strategy for epitaxial growth of topological insulators on semiconductors for designing new heterojunctions toward high-performance optoelectronic devices.
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DOI
APPLIED CATALYSIS B-ENVIRONMENTAL
·
2023
·
IF 22.1
Yuan Teng,Jing-Hua Chen,Yu-Hua Huang,Zi-Chun Zhou,Xu-Dong Wang,Dai-Bin Kuang,Hong-Yan Chen
The construction of high-quality heterojunction with staggered band structure and close-contact interface, to satisfy both the thermodynamic and dynamic prerequisites of charge transfer, is the key to improve the charge separation of halide perovskites . The in situ growth of perovskite heterojunction via cosharing atoms provides an appealing solution to tackle this dilemma, but it remains a big challenge owing to the lack of appropriate precursors. Here, we design a novel visible-light responsive Co x Bi 2−x O 2 CO 3 nanosheet , and use it as self-template to epitaxially grow Cs 3 Bi 2 Br 9 nanosheet . It is revealed that close-contact 2D/2D heterointerfaces with strong chemical and electronic coupling are built via Bi atom bridge. Moreover, incorporating Co 3+ into Bi 2 O 2 CO 3 plays critical roles in heterojunction growth by regulating both the electronic structure and growth dynamics of Cs 3 Bi 2 Br 9 . Triggered by the effect of Co and the matched Bi lattice with Cs 3 Bi 2 Br 9 , the Co x Bi 2−x O 2 CO 3 /Cs 3 Bi 2 Br 9 heterojunction can drive the fast Z-scheme transfer and separation of photoexcited charge carriers.
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高影响因子
Journal of Energy Chemistry
·
2023
·
IF 13.1
Jiaqian Ding,Xian Jiang,Caikang Wang,Zhuoya Zhu,Chang Xu,Yi Zhou,Xuan Wang,Qicheng Liu,Zhenyuan Liu,Yawen Tang,Jun Lin,Gengtao Fu
Ru with Pt-like hydrogen bond strength, knockdown cost (∼1/3 of Pt), and eximious stability is a competitive replacement for Pt-based catalysts towards the hydrogen evolution reaction (HER) in water splitting. The design of Ru-based catalysts via interface construction, crystal phase control, and specific light element doping to realize the impressive promotion of limited activity and stability remains challenging. Herein, we report the fabrication of Pd@RuP core-shell nanorods (NRs) via an epitaxial growth method, where ultrathin RuP shells extend the face-centered cubic ( fcc ) crystal structure and (111) plane of the Pd NRs core. Density functional theory results confirm that the core-shell interface engineering and P doping synergistically accelerate electron transfer and moderate the d -band center to generate a suitable affinity for H*, thus optimizing HER kinetics. Compared with Pd@Ru NRs and Pt/C, the Pd@RuP NRs exhibit preferable electrocatalytic stability and superior activity with a low overpotential of 18 mV at 10 mA cm −2 in the alkaline HER process. Furthermore, the integrated Pd@RuP//RuO 2 -based electrolyzer also displays a low operation potential of 1.42 V to acquire 10 mA cm −2 , demonstrating great potential for practical water electrolysis. Our work presents an efficient avenue to design Ru-based electrocatalysts via epitaxial growth for extraordinary HER performance.
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高影响因子
Coatings
·
2021
·Vol. 11
·期 7
·782
·
IF 2.881
Liu Wang,Wenrui Zhang,Ningtao Liu,Tan Zhang,Zilong Wang,Simiao Wu,Zhaolin Zhan,Jichun Ye
ZnGa2O4is a promising semiconductor for developing high-performance deep-ultraviolet photodetectors owing to a number of advantageous fundamental characteristics. However, Zn volatilization during the ZnGa2O4growth is a widely recognized problem that seriously degrades the film quality and the device performance. In this study, we report the synthesis of epitaxial ZnGa2O4thin films by pulsed laser deposition using a non-stoichiometric Zn1+xGa2O4target. It is found that supplementing excessive Zn concentration from the target is highly effective to stabilize stochiometric ZnGa2O4thin films during the PLD growth. The influence of various growth parameters on the phase formation, crystallinity and surface morphology is systematically investigated. The film growth behavior further impacts the resulting optical absorption and thermal conductivity. The optimized epitaxial ZnGa2O4film exhibits a full width at half maximum value of 0.6 degree for a 120 nm thickness, a surface roughness of 0.223 nm, a band gap of 4.79 eV and a room-temperature thermal conductivity of 40.137 W/(m⋅K). This study provides insights into synthesizing epitaxial ZnGa2O4films for high performance optoelectronic devices.
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高影响因子
Small
·
2021
·Vol. 18
·期 3
·2104244
·
IF 13.281
Jie Wu,Fakun Wang,Haobo Li,Sijie Yang,Pengyu Li,Yinghe Zhao,Yuan Li,Tianyou Zhai
Ultraviolet detection is of great significance due to its wide applications in the missile tracking, flame detecting, pollution monitoring, and so on. The nonlayered semiconductor γ-Bi 2 O 3 is a promising candidate toward high-performance UV detection due to the wide bandgap, excellent light sensitivity, environmental stability, nontoxic and elemental abundance properties. However, controllable preparation of ultrathin 2D γ-Bi 2 O 3 flakes remains a challenge, owing to its nonlayered structure, metastable nature, and other competing phases. Moreover, the UV photodetectors based on 2D γ-Bi 2 O 3 flake have not been implemented yet. Here, ultrathin (down to 4.8 nm) 2D γ-Bi 2 O 3 flakes with high crystal quality are obtained via a van der Waals epitaxy method. The as-synthesized single-crystalline γ-Bi 2 O 3 flakes show a body-centered cubic structure and grown along (111) lattice plane as revealed by experimental observations. More importantly, photodetectors based on the as-synthesized 2D γ-Bi 2 O 3 flakes exhibit promising UV detection ability, including a responsivity of 64.5 A W −1 , a detectivity of 1.3 × 10 13 Jones, and an ultrafast response speed (τ rise ≈ 290 µs and τ decay ≈ 870 µs) at 365 nm, suggesting its great potential for various optoelectronic applications.
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高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 9
·期 39
·13954-13962
·
IF 7.393
Yan Tian,Maoyuan Zheng,Yong Cheng,Zhigang Yin,Ji Jiang,Gaokai Wang,Jingren Chen,Xingxing Li,Jing Qi,Xingwang Zhang
Group IVB (Zr and Hf) transition metal dichalcogenides (TMDs) have attracted considerable attention due to their predicted excellent electronic properties that are superior to group VIB TMDs. However, the synthesis of high-quality ZrSe2 layers is seldom reported, greatly hindering the development of this new field. Herein, the epitaxial growth of ZrSe2 on c-plane sapphire substrates is, for the first time, demonstrated using the low-pressure chemical vapor deposition (CVD) method. Impressively, the CVD-grown high-quality ZrSe2 layers exhibit an atomically sharp interface with the underlying substrate, and their epitaxial relationship is determined to be: ZrSe2 (0001)[10–10]||Al2O3 (0001)[11–20]. The electronic band structures of ZrSe2 are calculated using density functional theory methods, showing an indirect band gap of 1.19 eV and a minimum direct band gap of 1.79 eV, respectively. The band gap of ZrSe2 layers is also determined from the UV-visible absorption spectra, which is in good agreement with our band-structure calculations. Furthermore, a photodetector was fabricated based on the CVD-grown ZrSe2 layer on a sapphire substrate, which exhibits a stable and appreciable photoresponse for visible light.
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高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Yue Liu,Bing Lan,Yiyi Fan,Dongling Wang,Yifei Cao,Fan Zhang,Xiaobin Xie
Site-selective epitaxial growth of metals onto shaped nanoparticles represents a versatile strategy for tailoring nanostructures to optimize the optical and catalytic properties. In this study, we systematically elucidate the critical factors governing the epitaxial growth of silver and platinum atoms onto gold nanorods (Au NRs), revealing that atomic defects on the Au NR surface dictate the deposition sites of Ag and Pt. By precisely modulating epitaxial growth conditions and density of surface atomic defects, we achieve the synthesis of dumbbell-shaped (DS) and thorny-shell (TS) structured Au-AgPt NRs. Notably, the DS-Au-AgPt0.24 NR catalyst demonstrated exceptional catalytic performance in alcohol fuel cell reactions, driven by their abundant atomic defects and strong strain effects localized at the crown structure. For ethylene glycol electro-oxidation, these DS-Au-AgPt0.24 NRs achieved a mass activity of 23.5 A mgPt–1 and a specific activity of 156.9 mA cm–2, which were 4.1 and 11.2 times higher than that of commercial platinum–carbon (Pt/C) catalysts (5.7 A mgPt–1 and 14.0 mA cm–2), respectively. Our findings not only advance the mechanistic understanding of defect-mediated epitaxial growth in multimetallic systems but also provide a blueprint for designing high-performance catalysts through atomic-scale structural engineering.
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DOI
PubMed
高影响因子
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