JOURNAL OF ALLOYS AND COMPOUNDS
·
2018
·
IF 3.779
Dongyang Wang,Xiao Zhang,Yong Yu,Lin Xie,Jinfeng Wang,Guangtao Wang,Jiaqing He,Yuling Zhou,Qiantao Pang,Jianwei Shao,Li-Dong Zhao
In this work, we report that the high performance of SnTe could be realized by enhancing electrical transport properties (power factor) and reducing thermal conductivity through stepwisely introducing elements of Sb, In and Se. We found that Sb and In co-doping can enhance Seebeck coefficients in the broad temperature range via optimizing carrier density and introducing resonant state, respectively. Moreover, nanostructures could be formed when the Sb content beyond the solubility limit in SnTe matrix, which coupled with point defects from In and Se alloying result in a very low (lattice) thermal conductivity through the enhanced phonon scattering from defects and grain boundaries. A peak ZT ∼1.0 at 923 K can be achieved with the enhanced power factor and reduced thermal conductivity. Accordingly, the average ZT value increases from ∼0.20 for undoped SnTe to ∼ 0.60 for multiple-doped SnTe (Sn 0.823 Sb 0.17 In 0.007 Te 0.98 Se 0.02 ) over 300–923 K, generating a high calculated conversion efficiency ∼ 11%. Present results indicate the high performance of SnTe can be obtained through stepwisely optimizing strategy in both electrical and thermal transport properties.
研究领域:
材料科学
·
热电转换
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Jisheng Liang,Hengquan Yang,Chengyan Liu,Lei Miao,Junliang Chen,Sijing Zhu,Zhengchuan Xie,Wenjing Xu,Xiaoyang Wang,Jun Wang,Biaolin Peng,Kunihito Koumoto
Mg3Sb2-based compounds by virtue of nontoxicity and low-cost have become a promising class of candidates for midtemperature thermoelectric power generation. Here, we successfully fabricated n-type Mg3Sb2-based materials using an inexpensive and efficient approach of one-step ball milling and spark plasma sintering, and demonstrate that a complementary and favorable effect of multiple elements coalloying/-doping leads to an excellent thermoelectric performance. The intrinsic p-type conducting behavior for Mg3Sb2 could be changed to n-type through Bi and Se coalloying on Sb sublattices with excess Mg, resulting from the suppression of Mg vacancies and the formation of Mg interstitial. Furthermore, Mn doping on Mg sublattices could soften the chemical bonds, leading to the increase of carrier mobility and concentration simultaneously. Additionally, multielement coalloying/-doping could significantly increase the lattice disorder, which undoubtedly strengthens the phonon scattering and readily results in a suppressed lattice thermal conductivity. As a result, a highest ZT value of 1.6 at 723 K and an average ZT value up to 1.1 were obtained in the temperature range of 323–723 K in the Mg3.18Mn0.02Sb1.5Bi0.49Se0.01 sample, which is one of the highest values among the Te free Mg3Sb2. This work could give guidance for improving the thermoelectric performance of Zintl phase materials or even others using the multielement codoping/-alloying strategy.
研究领域:
材料科学
·
能源工程
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DOI
PubMed
高影响因子
ACS Applied Energy Materials
·
2021
·
IF 6.024
Shuyao Li,Junhua Jiang,Zheng Ma,Yanqun Chen,Lanwei Li,Jianli Wang,Chao Wang
As we all know, the introduction of porous structure into the matrix is a very effective method to enhance the material’s thermoelectric performance. Herein, Er-doped Bi0.46Sb1.54Te3 bulk materials were successfully synthesized by high-energy ball milling and spark plasma sintering. The carrier mobility is enhanced and the carrier concentration is optimized by Er doping, thereby improving the electrical transport properties. Furthermore, the dispersed secondary phase nanoparticles and pores introduced by Er doping provide additional phonon scattering, which leads to the decreased lattice thermal conductivity. Finally, the Erx(Bi0.23Sb0.77)2–xTe3 (x = 0.02) sample shows a maximum ZT value of 1.21 at 350 K, and the average ZT value of 1.17 between 300–400 K is achieved.
研究领域:
材料科学
·
热电材料研究
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产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2020
·Vol. 47
·期 5
·6548-6553
·
IF 3.83
Chuangchuang Ruan,Hongzhang Song,Mengmeng Fan,Haoshan Hao,Shaohui Liu
Misfit-layered oxides Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) samples were synthesized using solid-state sintering method and the effects of SiC nanoparticles diapersion on the thermoelectric properties were investigated. Thermoelectric properties of Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) were investigated up to 923 K. Compared with pure sample, the electrical resistivity of SiC-added samples reduces, for Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) ceramic samples with x ≤ 0.05, the electrical resistivity decreases with increasing SiC nanoparticles adding amounts. And, the electrical resistivity exists transition from semiconductor to metal conduction mechanism. While, the thermal conductivity also decreases due to the addition of SiC nanoparticles . As a result, the Ca 3 Co 4 O 9+δ + 0.2 wt% SiC sample had the lowest thermal conductivity of 1.47 W/Km at 923 K, which was 18.4% lower than that of the Ca 3 Co 4 O 9+δ sample. The ZT value of Ca 3 Co 4 O 9+δ + 0.05 wt% SiC can reach 0.218, which is 40.9% higher than the pure Ca 3 Co 4 O 9+δ sample.
研究领域:
材料科学
·
凝聚态物理
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无机非金属材料
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能源材料
✓ 已验证
DOI
高影响因子
Crystals
·
2025
·Vol. 15
·期 7
·622
·
IF 2.4
Haoyu Zhao,Junliang Zhu,Zhonghe Zhu,Lin Bo,Wenying Wang,Xingshuo Liu,Changcun Li,Degang Zhao
Cubic phase SnSe-based materials have great potential in the field of thermoelectricity due to their reduced carrier scattering, increased band degeneracy, and ultra-low lattice thermal conductivity. Nevertheless, systematic studies on the influence of element doping on the thermoelectric properties of cubic SnSe-based materials are still relatively scarce. To enrich the research in this field, this work investigates the effects of Ge doping on the phase composition, electrical and thermal transport properties of cubic Sn0.50Ag0.25Bi0.25Se0.50Te0.50thermoelectric materials. X-ray diffraction (XRD) analysis confirmed that the Ge-doped samples exhibited a single cubic phase structure, while scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) revealed a uniform distribution of elements within the samples. The results indicate that increasing the Ge doping content substantially enhances their electrical conductivity, albeit at the expense of elevated thermal conductivity. By optimizing the content of Ge-doping, the thermoelectric figure of merit (ZT) reached 0.74 at 750 K. Notably, while moderate Ge doping enhances electrical transport properties, excessive doping leads to a significant rise in thermal conductivity, ultimately constraining further thermoelectric performance gains.
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产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2016
·Vol. 4
·期 34
·13171-13175
·
IF 8.262
Zhiwei Zhou,Junyou Yang,Qinghui Jiang,Yubo Luo,Dan Zhang,Yangyang Ren,Xu He,Jiwu Xin
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum ZT value of c. 1.1 at 873 K was obtained in Sn0.94Bi0.06Te, an enhancement of 165% compared with the undoped sample.
研究领域:
材料科学
·
热电材料研究
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产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2015
·
IF 2.999
Wei Guo,Jianmin Ma,Wenjun Zheng
Bi 2 Te 3 assembled by disordered nanosheets with defects was prepared using a one-step easy synthesis strategy based on easy solvothermal synthesis routes. The high compatibile plane structure, minimization of nucleation and interfacial angle energies are the driving force of the crystal connection and the formation of the defects. To survey the impact of the defects on their thermoelectric properties, thermoelectric properties of bulk pellets have been investigated, and they exhibited preferable thermoelectric properties with a high ZT value of 0.68 due to its unique structural characteristics.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2018
·Vol. 48
·期 4
·1840-1845
·
IF 1.566
Sun Fu-Hua,Dong Jinfeng,Tang Huaichao,Zhuang
Hua-Lu,Li Jing-Feng
Cu 12 Sb 4 S 13 tetrahedrite is an abundant natural that is also environmentally friendly. There have been efforts made to reach a unity of ZT value through optimizing the interdependence of electrical and thermal performance. In this study, we reported on ZnO nanoparticles-dispersed Cu 11.5 Ni 0.5 Sb 4 S 13− δ composites that were synthesized by the mechanical alloying and spark plasma sintering method. The structural characterizations were conducted via scanning electron microscopy, electronic probe microscopic analysis and transmission electron microscopy. The ZnO-nanoparticles were uniformly distributed in the Cu 12 Sb 4 S 13 grains. ZnO was used as a heterogeneous nucleation site to reveal the effectiveness of reducing thermal conductivity, likely derived from the strong low/mid-frequency phonon scattering. The lowest lattice thermal conductivity, 0.33 W m −1 K −1 , was obtained at 673 K in 0.5 vol.% of ZnO sample. A small quantity of ZnO addition led to a high ZT ∼ 1.0 at 723 K, which increased by ∼ 42% in the pure-phased Cu 12 Sb 4 S 13− δ sample.
研究领域:
材料科学
·
热电材料
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2025
·Vol. 16
·期 1
·1-11
·
IF 15.7
Zhang Lin,Shi Xiao-Lei,Shang Hongjing,Gu Hongwei,Chen Wenyi,Li Meng,Huang Daxing,Dong Hao,Wang Xiaolei,Ding Fazhu,Chen Zhi-Gang
Flexible thermoelectric materials and devices hold enormous potential for wearable electronics but are hindered by inadequate material properties and inefficient assembly techniques, leading to suboptimal performance. Herein, we developed a flexible thermoelectric film, comprising Ag 2 Se nanowires as the primary material, a nylon membrane as a flexible scaffold, and reduced graphene oxide as a conductive network, achieving a record-high room-temperature ZT of 1.28. Hot-pressed Ag 2 Se nanowires exhibited strong (013) orientation, enhancing carrier mobility and electrical conductivity. Dispersed reduced graphene oxide further boosts electrical conductivity and induces an energy-filtering effect, decoupling electrical conductivity and the Seebeck coefficient to achieve an impressive power factor of 37 μW cm −1 K −2 at 300 K. The high-intensity between Ag 2 Se and reduced graphene oxide interfaces enhance phonon scattering, effectively reducing thermal conductivity to below 0.9 W m −1 K −1 and enabling the high ZT value. The nylon membrane endowed the film with exceptional flexibility. A large-scale out-of-plane device with 100 pairs of thermoelectric legs, assembled from these films, delivers an ultrahigh normalized power density of >9.8 μW cm −2 K −2 , outperforming all reported Ag 2 Se-based flexible devices. When applied to the human body, the device generated sufficient power to operate a thermo-hygrometer and a wristwatch, demonstrating its practical potential for wearable electronics.
研究领域:
材料科学
·
能源技术
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产品关联
DOI
PubMed
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2024
·Vol. 45
·期 5
·117112
·
IF 5.8
Yaqian Du,Jianbo Li,Jun Wang
Compared with perovskite SrTiO 3 , SrO(SrTiO 3 ) 2 exhibits lower thermal conductivity , while maintaining a high Seebeck coefficient , making it a promising material for photothermoelectric conversion. However, the relationship between its infrared and thermoelectric properties remains unexplored. This study examines the effect of Gd doping on these properties of SrO(SrTiO 3 ) 2 . Increased Gd doping induces a gradual transformation of SrO(SrTiO 3 ) 2 -based into a SrTiO 3 -based material, resulting in a composite comprising three phases and a notable reduction in thermal conductivity . At 973 K, the thermal conductivity decreases to a minimum of 1.4 W m −1 K −1 , which is 23 % lower than undoped SrO(SrTiO 3 ) 2 and 51 % lower than SrTiO 3 . Like SrTiO 3 , SrO(SrTiO 3 ) 2 absorbs infrared radiation in the 8–14 μm range. Although the highest ZT value reaches only 0.06 at 973 K, it shows a positive correlation with infrared emissivity. These findings are valuable for advancing the application of thermoelectric effects and the development of high-performance infrared materials.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
能源材料
·
红外光学
✓ 已验证
DOI
高影响因子
RARE METALS
·
2017
·Vol. 37
·期 4
·343-350
·
IF 1.189
Qin Bing-Chao,Xiao Yu,Zhou Yi-Ming,Zhao Li-Dong
IV–VI compounds are considered as promising thermoelectric materials, and high thermoelectric performance was achieved in IV–VI solid solutions. In this work, the thermoelectric properties of Pb–Sn–Te–Se-based solid solutions were systematically investigated. Among these solid solutions, it is found that a figure of merit ( ZT ) peak value of 1.0 at 873 K can be obtained in (PbTe) 0.5 (SnTe) 0.5 , on account of the combination of superior electrical properties in SnTe and low thermal conductivity in PbTe. Furthermore, we investigated and summarized the thermoelectric transport properties and proposed the thermoelectric performance maps for the IV–VI solid solutions in Pb–Sn–Te–Se system. This comprehensive investigation on Pb–Sn–Te–Se-based solid solutions can effectively guide and scan thermoelectric performance for a given unknown composition and enhance the thermoelectric properties in IV–VI compounds. Graphical
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电转换
·
半导体物理
✓ 已验证
DOI
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2017
·
IF 3.454
Yun-Qiao Tang,Zhen-Hua Ge,Yue-Xing Chen,Peng Qin,Jing Feng,Jiaqing He
Cu-Se compounds have attracted more attentions as a low-cost, low toxicity thermoelectric materials. In this work, p-type Cu 2 Se x compound powders were prepared by solution syntheses, including the wet chemistry method and hydrothermal synthesis method. The reaction mechanisms were investigated, showing that the NaOH contents affected the phase structure of the final product. Polycrystalline Cu 2 Se x bulk materials were obtained by densifying the powders using spark plasma sintering (SPS) and obtained the maximum ZT value of 0.75 at 623 K, which is currently the highest reported value for the Cu-Se system at this temperature. We also found that the introduced oxides could suppress the long-range migration of Cu ions in Cu-Se system to avoid the decomposition of the materials.
研究领域:
材料科学
·
热电材料
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）