JOURNAL OF HAZARDOUS MATERIALS
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2023
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IF 13.6
Ning Sui,Zijie Song,Xiaoyi Xu,Shuang Cao,Yifeng Xu,Tingting Zhou,Tong Zhang
Ground-level ozone (O 3 ) is a primary air pollutant with potential adverse impacts on human health and ecosystems. Aiming to detect O 3 concentration and develop efficient O 3 sensing materials, sensing behavior of heterogenous cation (Fe 3+ , Sn 4+ and Sb 5+ ) doped In 2 O 3 nanostructures was investigated. The incorporation of these cations modulated the electronic structure of semiconductor oxides , affecting the density of chemisorbed oxygen species and reactive sites. From O 3 sensing results, Fe 3+ doped In 2 O 3 based sensors featuring saturated resistance curves in O 3 gas, demonstrated fast sensing speed and qualified detection threshold (20 ppb). In contrast, Sn 4+ and Sb 5+ doped counterparts exhibited non-saturated sensing curves, resulting in slower response/recovery speed. As a proof-of-concept, these optimized sensors were integrated as the sensor array. Coupled to the image recognition technique, this sensor array could successfully discriminate O 3 and NO x . That is, through the tailored combination of material modulation and sensor array, this study paves a novel approach for highly sensitive and selective O 3 detection.
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PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
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2025
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IF 13.2
Zhiyuan Ren,Bin Li,Yufeng Wu,Hui Liu,Feng Guo,Shaonan Tian,Jun Yang
Converting electronic waste into high-value catalytic materials is an effective strategy for reducing dependence on rare resources and enhancing sustainability. Herein, we synthesize fine-sized Sn-doped In 2 O 3-x particles with oxygen vacancies (Vo) using leachate from spent liquid crystal display panels (LCDPs) for efficient electrochemical CO 2 reduction (eCO 2 RR). Specifically, In 3+ and Sn 4+ ions from LCDPs leachate are coordinated with dodecylamine’s –NH 2 and transferred to the organic phase, followed by oleic acid modification to form the compounds (M−DDA−OA). Sn-doped Vo-rich In 2 O 3-x derived from LCDPs (rVo/LCDPs) can be synthesized by converting M−DDA−OA via a wet-chemistry process. Density functional theory (DFT) calculations and experimental results reveal that Sn doping and Vo in In 2 O 3-x synergistically enhance CO 2 adsorption and activation, facilitating the formation of *OCHO intermediates and achieving a maximum formate Faradaic efficiency (FE formate ) of 94.6 % for rVo/LCDPs at − 1.07 V vs RHE. This study highlights the potential for low-cost, high-performance In-based catalysts from spent LCDPs.
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FOOD CHEMISTRY
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2025
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IF 9.8
Kunxiang Deng,Yasen Wang,Yilin Wang,Zhifang Liu,Xinyi Li,Yixi Xie,Haoran Guo,Pengcheng Zhao,Junjie Fei
Chlorpyrifos (CPF) is widely utilized in agricultural practices, and its residue in food raise significant concerns food safety. However, current detection methods often suffer from complex operation procedures and unstable signal responses. Therefore, there is an urgent need to develop a reliable sensor for detecting CPF residue in food samples. In this work, a Z-scheme heterojunction was formed using hollow In 2 O 3 (H-In 2 O 3 ) and Bi 2 WO 6 nanosheets. The staggered band structure of the H-In 2 O 3 /Bi 2 WO 6 heterojunction facilitates carrier separation and transfer, thereby enhancing the sensor's response. In the presence of CPF, it reacts with · OH radicals generated by the heterojunction, further amplifying the signal. The sensor exhibits a linear response in the range of 5–700 nM with a limit of detection (LOD) of 0.72 nM. In addition, this photoelectrochemical sensor demonstrates satisfactory stability, anti-interference, selectivity and reproducibility, showing great potential for CPF analysis in real samples.
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SEPARATION AND PURIFICATION TECHNOLOGY
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2024
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IF 8.1
Kuan Wang,Tong Sun,Hui Ma,Run-Jing You,Zhen-Hong He,Jian-Gang Chen,Huan Wang,Weitao Wang,Yang Yang,Lei Wang,Zhao-Tie Liu
The conversion of CO 2 into chemicals with value-added can be achieved through the process of photocatalysis, which holds significant importance in the fields of energy and environmental sustainability. Herein, a unique S-scheme In 2 O 3 /Bi/BiOCl heterojunction nanoflower with abundant oxygen vacancies was fabricated by a self-assembly strategy, in which the introduction of In 2 O 3 could effectively regulate the in-situ growth of metal Bi and oxygen vacancy on the surface of BiOCl nanosheet. The nanoflower In 2 O 3 /Bi/BiOCl photocatalysts exhibited exceptional photocatalytic performance in the CO 2 reduction with H 2 O, ascribing to the synergistic effect of the unique S-scheme heterojunction, the surface plasmon resonance (SPR) effect of metal Bi, and oxygen vacancy engineering. Surprisingly, the In 2 O 3 /Bi/BiOCl-4 composites achieved 34.53 μmol⋅g −1 ⋅h −1 photoreduction efficiency of CO 2 -to-CO with high selectivity (97.5 %) and high stability, which was 3.12 times higher compared to the pure BiOCl. The S-scheme heterojunction of In 2 O 3 /Bi/BiOCl-4 nanoflower can promote carrier separation efficiency and improve light utilization. Meanwhile, the large specific surface area and abundant oxygen vacancies of the nanoflower with 3D/0D/2D structure self-assembly can provide more adsorption and active sites for CO 2 photocatalytic reaction. The SPR effect of the in-situ generated metal Bi can further enhance charge transfer to accelerate the photoreduction process of CO 2 . The present study provides a novel approach for the in-situ construction of S-scheme heterojunction photocatalysts with SPR effect and oxygen vacancies to pursue efficient photocatalytic CO 2 reduction in the water phase
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Small Methods
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2024
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IF 10.7
Jingze Yang,Dong Lin,Yushan Chen,Tiejun Li,Jing Liu
Solution processing has emerged as a promising technique for the fabrication of oxide thin-film transistors (TFTs), offering advantages such as low cost, high throughput, and exceptional compositional control. However, achieving reasonable electrical properties typically demands high annealing temperatures in the fabrication process. In addressing this challenge, a novel combination strategy is proposed that involves integrating the H 2 O 2 inducement technique with infrared (IR) irradiation annealing. The study investigates the effects of precursors and IR irradiation annealing temperatures on the electrical properties of In 2 O 3 TFTs. It is found that H 2 O 2 can help accelerate the decomposition of organic residues, while IR irradiation annealing could enhance the film densification. By employing the proposed strategy, metal oxide TFTs consisting of a Zr-Al-O dielectric fabricated at 230 °C and an In 2 O 3 channel layer fabricated at 185 °C demonstrated high performance with field-effect mobility = 31.7 cm 2 V −1 ·s −1 , threshold voltage = 1.3 V, subthreshold swing = 0.13 V per decade, and on-to-off current ratio = 1.1 × 10 5 . This work demonstrates the proposed combinational strategy is a general method to fabricate not only metal oxide semiconductors but also dielectrics.
研究领域:
材料科学
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半导体器件
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薄膜技术
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高影响因子
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