ACS Sustainable Chemistry & Engineering
·
2022
·
IF 9.224
Haozhe Qin,Bao Zhang,Chunhui Wang,Lei Ming,Xing Ou
Phase engineering for synchronously realizing the demand of electrochemical reactions and structural stability has attracted the great enthusiasm of researchers to obtain high capacity and tolerance for Na+ insertion, especially the construction of uniform heterostructures by regulating the crystal structure in the same phase. Herein, ultrathin GeS2 nanoflakes composed of a mixture of orthorhombic and monoclinic crystal structures have been constructed by employing an in situ Ge-MOF sulfidation method. Benefiting from the combined effect of the accelerated reaction kinetics derived from the self-assembly of heterostructures, and the enhanced reaction reversibility originating from the excellent homogeneity of heterointerfaces and a stable intermediate phase interface, the GS-OM electrode materials show outstanding rate properties (371.9 mA h g–1 at 30 A g–1) and Na+ uptake/removal durability (603.9 mA h g–1 at 10 A g–1 over 1000 cycles) and even deliver an excellent practicability (104.01 mA h g–1 at 1 A g–1 over 300 cycles for full cells). Of note, this constructed phase engineering is expected to provide powerful guidance and effective insight for designing better sodium ion battery anodes with not only superior electrochemical reaction reversibility but also improved structure perdurability.
研究领域:
材料科学
·
电化学
·
纳米技术
✓ 已验证
DOI
高影响因子
ACS Applied Polymer Materials
·
2024
·
IF 4.4
Hanjun Wu,Yang Zhang,Zhenyue Zhang,Wenda Guo,Wendou Chen,Guoqing Feng,Junxia Yu,Ruan Chi,Zhiquan Pan
In this work, a germanium ion-imprinted polymer (Ge-IIP) based on α-bromobutyric intercalation-modified hydrotalcite was synthesized by atom transfer radical polymerization and applied for the capture of germanium ions from wastewater. In particular, layered hydrotalcite as a skeleton support induced in situ polymerization of Ge-IIPs to form graded pores, and an α-bromobutyric interlayer was also used as an initiator to induce graft polymerization of functional monomers of 3-dihydroxypropyl-2-acrylate to form strong coordination cavities for germanium ions. Batch experiment results showed that Ge-IIPs could effectively capture germanium at a pH value of 3, and the maximum adsorption capacity was up to 55.18 mg·g–1. The adsorption kinetics and isotherms indicated that the capture of germanium was consistent with a pseudo-second-order kinetic model and a Freundlich isotherm model. The distribution coefficient values of Ge(IV) adsorption by Ge-IIPs in a coexisting metal ion solution were as high as 25 231.36 mL·g–1, indicating significant capture selectivity. In addition, Ge-IIPs showed good reusability, and the uptake rate of germanium could still reach 98.45% after 5 cycles. Furthermore, density functional theory calculation indicated that the efficient selective capture of germanium by Ge-IIPs may be attributed to the ion exchange and surface complexation between germanium ions and the abundance of o-hydroxyl groups in the Ge-IIP structure. The excellent salt tolerance and adsorption selectivity of Ge-IIPs provide the possibility for its practical application in germanium recovery from wastewater.
研究领域:
环境科学
·
材料科学
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2024
·Vol. 14
·期 8
·722
·
IF 4.4
Zhengtang Cai,Kaipeng Zheng,Chun Ma,Yu Fang,Yuyang Ma,Qinglin Deng,Han Li
Compared to SnTe and PbTe base materials, the GeTe matrix exhibits a relatively high Seebeck coefficient and power factor but has garnered significant attention due to its poor thermal transport performance and environmental characteristics. As a typical p-type IV–VI group thermoelectric material, W-doped GeTe material can bring additional enhancement to thermoelectric performance. In this study, the introduction of W, Ge1−xWxTe (x= 0, 0.002, 0.005, 0.007, 0.01, 0.03) resulted in the presence of high-valence state atoms, providing additional charge carriers, thereby elevating the material’s power factor to a maximum PFpeakof approximately 43 μW cm−1K−2, while slightly optimizing the Seebeck coefficient of the solid solution. Moreover, W doping can induce defects and promote slight rhombohedral distortion in the crystal structure of GeTe, further reducing the lattice thermal conductivityκlatto as low as approximately 0.14 W m−1K−1(x= 0.002 at 673 K), optimizing it to approximately 85% compared to the GeTe matrix. This led to the formation of a p-type multicomponent composite thermoelectric material with ultra-low thermal conductivity. Ultimately, W doping achieves the comprehensive enhancement of the thermoelectric performance of GeTe base materials, with the peak ZT value of sample Ge0.995W0.005Te reaching approximately 0.99 at 673 K, and the average ZT optimized to 0.76 in the high-temperature range of 573–723 K, representing an increase of approximately 17% compared to pristine GeTe within the same temperature range.
研究领域:
材料科学
·
能源材料
·
热电材料
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SENSORS
·
2025
·Vol. 25
·期 8
·2530
·
IF 3.5
Junting Zhang,Jiexin Chen,Shuojia Zheng,Da Zhang,Shaojuan Luo,Huixia Luo
HighlightsWhat are the main findings?A facile chemical strategy was developed for the synthesis of two-dimensional Te-doped GeH nanostructures with atomic-level precision and structural integrity.The Te-GeH-based photoelectrochemical (PEC) photodetectors exhibit high responsivity (708.5 µA/W) and ultrafast response speeds (92 ms rise/526 ms decay) under zero-bias conditions, demonstrating excellent broadband photoresponse.What is the implication of the main finding?The introduction of Te atoms enables effective modulation of the electronic structure in the GeH system. Owing to the comparable atomic radius between Te and Ge, efficient doping is achieved without disrupting the host lattice. In addition, the high electronegativity of Te induces electron redistribution and facilitates the formation of a built-in electric field, thereby optimizing charge separation and transport behavior. This approach provides a novel pathway for the functional design of Zintl-phase-derived two-dimensional materials, with broad implications for advanced optoelectronic applications.This doping strategy significantly enhances the photoelectrochemical performance of GeH-based photodetectors and enables the scalable fabrication of 2D nanomaterials with tunable optoelectronic properties. The resulting Te-GeH nanostructures offer improved carrier dynamics and reduced recombination, serving as a promising material platform for next-generation self-powered broadband photodetectors.Two-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects. With the growing interest in 2D materials, research on germanene-based systems remains relatively underexplored despite their potential for tailored optoelectronic functionalities. Herein, we demonstrate a facile and rapid chemical synthesis of tellurium-doped germanene hydride (Te-GeH) nanostructures (NSs), achieving precise atomic-scale control. The 2D Te-GeH NSs exhibit a broadband optical absorption spanning ultraviolet (UV) to visible light (VIS), which is a critical feature for multifunctional photodetection. Leveraging this property, we engineer photoelectrochemical (PEC) photodetectors via a simple drop-casting technique. The devices deliver excellent performance, including a high responsivity of 708.5 µA/W, ultrafast response speeds (92 ms rise, 526 ms decay), and a wide operational bandwidth. Remarkably, the detectors operate efficiently at zero-bias voltage, outperforming most existing 2D-material-based PEC systems, and function as self-powered broadband photodetectors. This work not only advances the understanding of germanene derivatives but also unlocks their potential for next-generation optoelectronics, such as energy-efficient sensors and adaptive optical networks.
研究领域:
材料科学
·
光学工程
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ELECTROCHEMISTRY COMMUNICATIONS
·
2024
·
IF 4.7
Kewei Shu,Cunguo Yang,Huizhu Niu,Xiaorui Fuyan,Shuqi Yang,Haihua Wang
GeP 3 is a promising anode material for sodium ion battery due to better conductivity, relatively high theoretical capacity and improved mechanical endurance compared to phosphorus and other phosphides. However unsatisfied rate capability and cycling stability is still an annoying issue that hinders the application of GeP 3 . Here, GeP 3 was hybridized with P doped carbon (PPC) derived from low-cost coal tar pitch to prepare composite electrode. Through ball-milling process, the GeP 3 and PPC was homogenously mixed and form fused, secondary particles as confirmed by electron microscope. The formation of P-C and P-O-C bond between GeP 3 and carbon matrix was evidenced by XPS, and prompted by P doping level and O content in PPC. The electrochemical performance of the composite electrodes was evaluated, demonstrated much enhanced properties compared to bare GeP 3 and also GeP 3 /carbon black electrode. High reversible capacity of 781 mAh/g was achieved by GeP 3 /PPC-950 at 0.05 A/g. At higher current density of 2 A/g, the capacity can maintain at 360 mAh/g, 46% of the value that obtained at 0.05 A/g. The correlation between the structure of carbon and battery performance was discussed. The improvement in battery performance can be attributed to suppressed volume expansion and good conductive network of the GeP 3 /PPC composite, which affected by P doping level and O content of PPC.
研究领域:
材料科学
·
电化学
✓ 已验证
DOI
高影响因子
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
·
2021
·Vol. 105
·期 2
·1253-1264
·
IF 3.784
Kang Du,Chang-Zhi Yin,Yan-Bo Guo,Xiao-Chuan Wang,Wen-Zhong Lu,Shi-Wo Ta,Chun-Yuan Hu,Wen Lei
Ca 3 SnSi 2- x Ge x O 9 (0 ≤ x ≤ 0.8) and (1– y ) Ca 3 SnSi 1.6 Ge 0.4 O 9 – y CaSnSiO 5 – 2 wt% LiF ( y = 0.4 and 0.5) microwave dielectric ceramics were prepared by traditional solid-state reaction through sintering at 1250°C–1425°C for 5 h and at 875°C for 2 h, respectively. Ge 4+ replaced Si 4+ , and Ca 3 SnSi 2- x Ge x O 9 (0 ≤ x ≤ 0.4) solid solutions were obtained. At 0.1 ≤ x ≤ 0.4, the Ge 4+ substitution for Si 4+ decreased the sintering temperature of Ca 3 SnSi 2- x Ge x O 9 from 1425 to 1300°C, the SnO 6 octahedral distortions, and the average CaO 7 decahedral distortions, which affected the τ f value. The large average decahedral distortions corresponded with nearer-zero τ f values at Ca 3 SnSi 2- x Ge x O 9 (0.1 ≤ x ≤ 0.4) ceramics. The τ f value and sintering temperature of Ca 3 SnSi 2- x Ge x O 9 ( x = 0.4) ceramic were adjusted to near-zero by CaSnSiO 5 and decreased to 875°C upon the addition of 2 wt% LiF. The (1 – y ) Ca 3 SnSi 1.6 Ge 0.4 O 9 – y CaSnSiO 5 – 2 wt% LiF ( y = 0.5) ceramic sintered at 875°C for 2 h exhibited good microwave dielectric properties: ε r = 10.3, Q × f = 14 300 GHz (at 12.2 GHz), and τ f = ‒5.8 ppm/°C.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
Materials Chemistry Frontiers
·
2021
·Vol. 5
·期 21
·7778-7786
·
IF 6.482
Wei Wei,Yongya Zhang,Lei Liang,Kefeng Wang,Qingfeng Zhou,Yanli Zhou,Hua Wang
Metal germanium (Ge) with a high theoretical capacity of 590 mA h g−1 is regarded as a promising anode material for sodium ion batteries, but it suffers from a fast capacity decay problem due to the serious agglomeration of Ge particles caused by the drastic volume change during the sodiation/desodiation process. Constructing highly dispersed ultrafine Ge nanoparticles is a possible way to address this problem. However, reported methods to obtain highly dispersed metal nanoparticles encountered problems of poor electrochemical activity or non-uniform particle size. In this work, we proposed a new in situ confined polymerization method for preparing highly dispersed Ge quantum dots (QDs). Due to the high dispersion of Ge QDs in carbon frameworks derived from poly(ionic liquid) networks, the obtained Ge@C nanocomposite could effectively avoid the agglomeration of Ge particles. When applied as the anode material for sodium ion batteries, the Ge@C nanocomposite shows ultra-long cycle life and high rate capability. At a current density of 1500 mA g−1, the Ge@C electrode could display a high capacity of 201 mA h g−1 after 5000 cycles. This method could be extended to prepare other highly dispersed metal nanoparticles and achieve fairly efficient electrode materials for new-type secondary batteries.
研究领域:
材料科学
·
电化学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2022
·Vol. 10
·期 38
·20489-20496
·
IF 14.511
Weihua Wang,Xiaowei Lu,Lin Sun,Jipeng Luo,Quan Shi,Na Ta,Peng Jiang,Xinhe Bao
Thermoelectric materials, which can directly convert thermal energy into electricity, play an important role in waste heat recovery. Sb2Si2Te6 is a promising medium-temperature thermoelectric material for power generation. However, its application is restricted by the relatively low power factor (PF) and the decompostion at high temperature. Herein, we successfully improved the power factor of Sb2Si2Te6 by doping with germanium (Ge). Benefiting from the optimized carrier concentration, the power factor of Sb2Si1−xGexTe6 remains higher than 1100 μW m−1 K−2 from 473 K to 773 K and the highest zT value reaches 1.0 at 773 K. Furthermore, the power generation performance of a single-pair thermoelectric module, consisting of Sb2Si1.94Ge0.06Te6 and Mg3.2Sb1.5Bi0.49Te0.01, is evaluated by three-dimensional numerical simulation. The simulated conversion efficiency is as high as 13% at a temperature difference of 500 K, and the power density can reach up to 3 W cm−2. Our results demonstrate that Ge doping can effectively modify the thermoelectric properties of Sb2Si2Te6 and improve its power generation performance, paving the way for realistic applications in the medium-temperature region.
研究领域:
材料科学
·
能源工程
✓ 已验证
DOI
高影响因子
Journal of Energy Chemistry
·
2025
·
IF 14.9
Xin Qin,Zuqiang Ge,Yafei Wang,Guanzhong Ma,Fei Yang,Qian Xu,Yanpeng Li,Debin Kong,Junwei Han,Linjie Zhi
Micro silicon (mSi) is a promising anode candidate for all-solid-state batteries due to its high specific capacity, low side reactions, and high tap density. However, silicon suffers from its poor electronic and ionic conductivity, which is particularly severe on a micro scale and in solid-state systems, leading to increased polarization and inferior electrochemical performance. Doping can broaden the transmission pathways and reduce the diffusion energy barrier for electrons and lithium ions. However, achieving effective, uniform doping in mSi is challenging due to its longer diffusion paths and higher energy barriers. Therefore, current doping research is primarily limited to nanosilicon. In this study, we successfully used a Joule-heating activated staged thermal treatment to achieve full-depth doping of germanium (Ge) in the mSi substrate. The Joule-heating process activated the mSi substrate, resulting in abundant vacancy defects that reduced the diffusion barrier of Ge into the silicon lattice and facilitated full-depth Ge doping. Surprisingly, the resulting Si-Ge anode exhibited significantly enhanced electrical conductivity (70 times). Meanwhile, the improved Li-ion conductivity in mSi and the reduced Young’s modulus enhance the electrode reaction kinetics and integrity after cycling. Ge-doped silicon anodes demonstrate excellent electrochemical performance when applied in sulfide solid-state half-cells and full-cells. This work provides substantial insights into the rational structural design of mSi alloyed anode materials, paving the way for the development of high-performance solid-state Li-ion batteries.
研究领域:
材料科学
·
电化学
·
纳米技术
·
固体物理
·
储能
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Shimeng Zhang,Zeyu He,Zhiguo Wang,Zhenggang Rao,Yunlong Hu,Chunchun Li,Longlong Shu
The diopside-structured CaZnGe 2 O 6 ceramics were synthesized using the conventional solid-state reaction method in this study, and their crystal structure, microstructural evolution, and microwave dielectric properties were systematically investigated. The XRD and Rietveld refinement analyses confirmed that CaZnGe 2 O 6 crystallizes in the monoclinic crystal system with a C 2/ c space group. The intrinsic microwave dielectric properties of the ceramics were evaluated using far-infrared spectroscopy. The ceramic structure exhibits high density and microstructural homogeneity after sintering at 1130 °C, resulting in exceptional microwave dielectric properties achieved at this optimal temperature ( ε r = 8.78 Q×f = 63,782 GHz, τ f = −66.4 ppm/°C). These findings highlight the potential application of CaZnGe 2 O 6 ceramics as low-permittivity materials suitable for microwave devices.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Di Qian,Yahong Jin,Yanmei Li,Haoyi Wu,Yihua Hu
The continually advancing near-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) hold pivotal significance in optical imaging and NIR spectroscopy. Cr 3+ -doped garnet broadband NIR phosphors have attracted considerable attention owing to their high optical performance enabled by the rigid structure. Nonetheless, the emission wavelength is severely restricted, and longer wavelength emissions usually result in inferior quantum efficiency and poor luminescence stability. In this work, the concurrent reconstruction of dodecahedral and octahedral sites by introducing [Na + -Sn 4+ ] unit in the framework of Na 2 CaSn 2 Ge 3 O 12 garnet contributes to the Cr 3+ broadband NIR emission spanning 700–1200 nm, with a peak at 820 nm. Utilizing a charge compensation strategy via Ta 5+ codoping largely boosts the internal quantum efficiency (IQE) of Na 2 CaSn 2 Ge 3 O 12 :Cr 3+ from 93.06 % up to 95.04 %. Trap-mediated energy compensation is proposed to achieve a record-breaking zero-thermal-quenching behavior (99.39 %@423 K) of Cr 3+ -doped garnet with such a longer wavelength emission. The encapsulated prototype broadband NIR pc–LED gives rise to an overwhelming NIR output power of 590.9 mW@1300 mA and a photoconversion efficiency (PCE) of 32.62 % at 30 mA, rendering exceptional performance in night vision, detection, and NIR imaging applications.
研究领域:
光学材料
·
发光材料
·
光电子学
✓ 已验证
DOI
高影响因子
Nanoscale
·
2019
·Vol. 11
·期 48
·23116-23125
·
IF 6.97
Yijun Liu,Minghui Wu,Zhaoyang Sun,Shengxue Yang,Chunguang Hu,Li Huang,Wanfu Shen,Bin Wei,Zhongchang Wang,Shiqi Yang,Yu Ye,Yan Li,Chengbao Jiang
Low-symmetry two-dimensional (2D) materials with unique in-plane anisotropy can promote both fundamental science and practical applications in optics, optoelectronics, electronics, and polarization detection. As a member of 2D materials, doping/alloying material systems have gained great attention owing to the tunable bandgap and special properties. However, the in-plane anisotropic optical and electrical properties of these 2D alloy materials have rarely been reported. In this work, low-symmetry 2D Ge(1−x)SnxSe2 (x = 0–1.0) alloy flakes have been synthesized by chemical vapor deposition (CVD) with a bandgap varying from 1.55 eV (GeSe2, x = 0) to 1.90 eV (SnSe2, x = 1.0). Angle-resolved polarized Raman spectroscopy (ARPRS) is used to confirm the in-plane vibrational anisotropy, and azimuth-dependent reflectance difference microscopy (ADRDM) is applied to visualize the in-plane optical anisotropy. Polarization-dependent transmission spectroscopy (PDTS) is carried out to reflect the in-plane absorptional anisotropy and linear dichroism, and birefringence characteristics are also found in the subsequent studies. All of the results indicate the unique in-plane optical anisotropy and birefringence characteristics of the 2D Ge(1−x)SnxSe2 alloy flakes, providing new opportunities for polarization-controlled devices, optical wave plates, and polarizers.
研究领域:
材料科学
·
光学
·
物理化学
✓ 已验证
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）