查找使用阿拉丁产品的科研文献

Detection of ppb-Level SO2 at Room Temperature Based on Bi2O2Se Nanosheets

Xinxin He,Xuanyu Ren,Xuyang An,Ping Guo,Yinhua Hu,Tiezhu Liu,Jia Zhang

Monitoring sulfur dioxide (SO2) is crucial for protecting human health as exposure to this pollutant can cause respiratory and cardiovascular illnesses, particularly in vulnerable populations. The primary materials currently used for detecting SO2 are metal oxides. However, it is still a challenge to detect SO2 at the parts per billion (ppb) level via these materials even when operated at high temperatures. Herein, we propose a highly sensitive SO2 sensor that operates at room temperature (RT). The sensing material employed is the hydrothermally synthesized bismuth oxyselenide (Bi2O2Se) nanosheets. The Bi2O2Se sensor exhibits a response value of 34% to 1 ppm SO2 and a detection limit of 20 ppb, which surpasses most SO2 sensors reported to date. The superior sensitivity and selectivity of Bi2O2Se nanoppbsheets toward SO2 are attributed to their strong adsorption energy (−0.76 eV) and significant electron transfer (2.205 e) between Bi2O2Se and SO2 molecules, as confirmed by density functional theory (DFT) calculations. Finally, a wireless SO2 sensing system is designed and implemented based on the SO2 sensor, enabling the detection of trace-level SO2 in indoor environments such as factories and laboratories, thereby protecting the well-being of personal further.

Effect of Ta Doping on the Microstructure and Thermoelectric Properties of Bi2O2Se

Jia-Ling Jiang,Song-Tao Dong,Zhuang Fu,Miao-Cheng Yu,Lijun Zhao,Lei Wang

In this study, Bi2−xTaxO2Se (x = 0, 0.02, 0.04, 0.06, and 0.08) ceramics were prepared using a synthesis method combining high-energy ball milling and cold pressing. Furthermore, the effects of tantalum (Ta) doping on the microstructure and thermoelectric properties of Bi2O2Se were systematically investigated. The results indicate that Ta doping effectively improves the carrier concentration and mobility, thus increasing the electrical conductivity from 8.75 S cm−1to 39.03 S cm−1at 323 K. Consequently, the power factor is improved, reaching a maximum value of 124 μW m−1K−2for the Bi1.92Ta0.08O2Se sample at 773 K. Moreover, the thermal conductivity of Bi1.96Ta0.04O2Se is reduced to 0.50 Wm−1K−1. Finally, the maximum dimensionless figure of merit (ZT) value of the Bi1.94Ta0.06O2Se sample reached 0.18, which was 64% higher than that of Bi2O2Se (0.11). These results indicate that Ta doping and high-energy ball milling can optimize the electrical and thermal properties and thus improve the thermoelectric properties of ceramics.

Enhanced Thermoelectric Properties of Oxyselenide Bi2O2Se via Cl Doping and Microstructure Modulation

Lele Chen,Ruqing Chen,Yule Huang,Meiqing Liang,Yang Zhou,Danning Ma,Kai Guo

Bi2O2Se is an emerging oxyselenide semiconductor, noted for its promising thermoelectric properties and excellent chemical stability, and it is often regarded as an n-type counterpart to p-type BiCuSeO. However, its intrinsic thermoelectric figure of merit (zT) is severely limited by low electron concentration and high thermal conductivity. In this work, we employed Cl element as donator dopant to substantially enhance the carrier concentration. The room-temperature carrier concentration of Bi2O2Se0.98Cl0.02thereby reached 2.70 × 1020cm−3, representing an improvement of two orders of magnitude compared to that of pristine Bi2O2Se. Subsequently, multiple hot-pressing cycles were applied to the optimized composition Bi2O2Se0.98Cl0.02. The process induced significant grain refinement, and the resulting high density of grain boundaries effectively suppressed the lattice thermal conductivity, reducing it to 0.95 W·m−1·K−1at 823 K. Eventually, a maximumzTof 0.24 was achieved at 823 K for the three-time hot-pressed Bi2O2Se0.98Cl0.02sample, representing a 71% improvement compared with the pristine Bi2O2Se sample prepared by single hot-pressing (zT= 0.14 at 823 K). This work provides a new strategy for enhancing the thermoelectric performance of oxyselenide through the synergistic regulation of doping and microstructure.

In-plane dominated growth strategy of 2D Bi2O2Se nanosheets and photodetectors performance

Shuyu Xu,Guoqiang Zhang,Xiangjie Zhang,Xin Lin,Zewen Li,Yangyang Xie,Fengpu Zhang,Xudong Chen,Yongzhe Zhang,Fang Wang,Kailiang Zhang

Two-dimensional (2D) semiconductor Bi 2 O 2 Se shows considerable promise for optoelectronic devices owing to its high carrier mobility, tunable bandgap, and excellent air stability. However, inability of conventional methods to precisely control nanosheets orientation compromises the resulting nanosheets quality and thickness uniformity. To address the issues of growth orientation and thickness in Bi 2 O 2 Se nanosheets, this work achieved the synthesis of large-area, high-quality Bi 2 O 2 Se through optimization of the source-substrate distance and pressure, combined with exploration of the corresponding growth mechanism, and constructed optoelectronic detection devices. Research into the influence of Bi 2 O 2 Se nanosheets thickness on device photoresponse characteristics indicates that at 18 nm thickness, under excitation by 420 nm wavelength light, the corresponding optimal responsivity and high detectivity reached ∼3269 A/W and 4.25 × 10 10 Jones respectively, with an external quantum efficiency as high as 6.2 × 10 5 %. Moreover, the photoconductive effect mechanism of Bi 2 O 2 Se-based photodetectors devices has been preliminarily explored, facilitating further optimization of photodetectors device development for 2D materials.

Rational Design of 2D/3D Bi2O2Se–CNT Hybrid Architectures for Synergistic Lithium Storage

Duqiang Xin,Yue Zhang,Yeming He,Jiao Liu,Wenyuan Duan,Guoxiu Han,Qi Zhang,Yuming Yang

The development of advanced anode materials with high capacity and structural stability addressing the limitations of conventional graphite anodes in theoretical capacity (372 mA h g−1) and severe volume expansion remains a critical challenge for lithium-ion batteries (LIBs). Herein, we propose a structural engineering strategy through high-temperature calcination to construct 2D layered Bi2O2Se integrated with optimized 3D carbon nanotube (CNT) frameworks (Bi2O2Se–CNT-x). Comprehensive characterization (XRD, Raman, FESEM, XPS) verifies the high crystallinity of Bi2O2Se and the successful establishment of 3D conductive networks through interfacial coupling with CNTs. Electrochemical evaluation demonstrates that the optimized Bi2O2Se–CNT-2 composite delivers a remarkable initial discharge capacity of 1544.7 mA h g−1at 0.1 A g−1, significantly outperforming pristine Bi2O2Se (124.3 mA h g−1). Notably, it maintains superior rate capability (405.0 mA h g−1at 2 A g−1, 35.2% capacity retention) and cycling stability (74.8% capacity retention after 250 cycles), attributed to the synergistic effects between 2D Bi2O2Se lamellae and the conductive CNT matrix. The 3D CNT network facilitates rapid electron transport while mitigating volume fluctuations, whereas the layered Bi2O2Se enables a hybrid storage mechanism combining intercalation, conversion, and alloying reactions. This work broadens the application horizons of 2D layered materials in energy storage systems.

Converting commercial Bi2O3 particles into Bi2O2Se@Bi4O8Se nanosheets for “rocking chair” zinc-ion batteries

Haonan Yue,Mengwei Han,Xinni Li,Ting Song,Yong Pei,Xianyou Wang,Xiongwei Wu,Tengfei Duan,Bei Long

The development of a low-cost, high-capacity, and insertion-type anode is key for promoting “rocking chair” zinc-ion batteries. Herein, commercial Bi 2 O 3 (BiO) particles are transformed into Bi 2 O 2 Se@Bi 4 O 8 Se (BiOSe) nanosheets through a simple selenylation process. The change in morphology from commercial BiO particle to BiOSe nanosheet leads to an increased specific surface area of the material. The enhanced electronic/ionic conductivity results in its excellent electrochemical kinetics. Ex situ XRD and XPS tests prove the intercalation-type mechanism of BiO and BiOSe as well as the superior electrochemical reversibility of BiOSe compared to BiO. Furthermore, the H + /Zn 2+ co-insertion mechanism of BiOSe is revealed. This makes BiOSe to have low discharge plateaus of 0.38/0.68 V, a high reversible capacity of 182 mA h g −1 at 0.1 A g −1 , and a long cyclic life of 500 cycles at 1 A g −1 . Besides, the BiOSe//MnO 2 “rocking chair” zinc-ion battery offers a high capacity of ≈90 mA h g −1 at 0.2 A g −1 . This work provides a reference for turning commercial material into high-performance anode for “rocking chair” zinc-ion batteries.

Highly Sensitive U-Shaped Optical Fiber Refractometer Based on Bi2O2Se-Assisted Surface Plasmon Resonance

Qi Wang,Na-Na Du,Wan-Ming Zhao,Lei Wang,Xue-Wei Cong,Ai-Song Zhu,Feng-Mei Qiu,Ke-Ke Zhang

Scalable Layer-Controlled Oxidation of Bi2O2Se for Self-Rectifying Memristor Arrays With sub-pA Sneak Currents

Yingjie Zhao,Zhefeng Lou,Jiaming Hu,Zishun Li,Lanxin Xu,Zhe Chen,Zhuokai Xu,Tao Wang,Mengqi Wu,Haoting Ying,Minghao An,Wenbin Li,Xiao Lin,Xiaorui Zheng

Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing Bi 2 O 2 Se single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting β-Bi 2 SeO 5 /Bi 2 O 2 Se heterostructures. The resulting β-Bi 2 SeO 5 /Bi 2 O 2 Se memristor demonstrates remarkable self-rectifying resistive switching performance (over 10 5 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self-rectifying β-Bi 2 SeO 5 /Bi 2 O 2 Se memristor, achieving sub-pA sneak currents to minimize cross-talk effects in high-density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub-100 ns) and low power consumption (1.2 pJ) as characterized by pulse-mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self-rectifying switching mechanism, elucidated through controllable β-Bi 2 SeO 5 thickness modulation and theoretical ab initio calculations.

Optimization of the thermoelectric properties of Bi2O2Se ceramics by altering the temperature of spark plasma sintering

Tan Xing,Lan Jin-Le,Liu Yao-Chun,Ren Guang-Kun,Zeng Cheng-Cheng,Lin Yuan-Hua,Nan Cewen

The n-type polycrystalline Bi 2 O 2 Se ceramics were fabricated by solid state reaction and SPSed at different temperatures (873–973 K). The grains of the sample grow up gradually and the grain size enlarges from about 200 nm to micrometer level with the increase of sintering temperature. The highest electrical conductivity of 6.23 S/cm is obtained for the sample sintered at 898 K which benefits from grain orientation along ( 00l ) plane and the highest measured density. The electrical transport properties tend to decline with further increase of the sintering temperature due to the decrease of density and the orientation degree. The maximum power factor of 78.39 μWK −2 m −1 is obtained at 773 K. The thermal conductivity is intrinsically suppressed owing to the layered crystal structure of Bi 2 O 2 Se and fine grains within the nanometer size. The ZT value reaches 0.09 at 773 K for the sample SPSed at 898 K and the optimal temperature during the SPS process has been determined.

CoSe(OH)/Bi2O2Se heterostructure composites synthesized by one-step method as an anode material of high-performance alkaline supercapattery

Huifang Lv,Haibo Rao,Zhiyu Zhou,Yang Zhao,Hualiang Wei,Zexiang Chen,Xiao Zhang,Yunlu Dai,Yanli Gong,Yan Wang

Improving the energy storage capabilities of aqueous alkaline supercapatteries relies heavily on the development of high-performance anode materials. Here, we presented a one-step composite molten salts method for the preparation of cobalt selenium hydroxide and Bi 2 O 2 Se heterostructure composites (CoSe(OH)/Bi 2 O 2 Se). The composite capitalizes on the advantageous interlayer properties of two-dimensional (2D) layered Bi 2 O 2 Se, connected via weak Van der Waals forces, alongside the high theoretical specific capacity of cobalt hydroxide derived from cobalt selenium hydroxide. This synergy facilitates efficient ion transport, thus exhibiting remarkable electrochemical characteristics. Specifically, CoSe(OH)/Bi 2 O 2 Se demonstrates a great specific capacity of 313.6 mAh/g at 1 A/g, significantly outperforming pure Bi 2 O 2 Se nanosheets. Moreover, CoSe(OH)/Bi 2 O 2 Se exhibits remarkable rate capability with 63.8% capacitance retention at sufficiently high current density (20 A/g), and excellent cycle performance that the capacitance remains is 70.3% after 1000 cycles of GCD testing. Additionally, ex-situ XRD analysis of CoSe(OH)/Bi 2 O 2 Se at different charge and discharge stages provides further insights into its energy storage mechanism. Furthermore, the NiAl-Cl LDH// CoSe(OH)/Bi 2 O 2 Se device demonstrates high power density and energy density. These results validate the feasibility of enhancing the electrochemical performance of 2D Bi 2 O 2 Se layered materials through the incorporation of active and cost-effective transition metal oxides/hydroxides, highlighting the tremendous potential of CoSe(OH)/Bi 2 O 2 Se as a negative electrode material for aqueous alkaline supercapattery.

Highly Sensitive U-Shaped Fiber Optic Surface Plasmon Resonance Biosensors Using Bi2O2Se and Au Nanoparticles Composite Nanomaterials for Biomedical Diagnostics

Na-Na Du,Qi Wang,Lei Wang,Li-Jie Zhang,Yi-Tong Xing,Ling-Ling Jia,Ben Li,Hua-Long Du

Composite nanomaterials significantly enhance sensor sensitivity in surface plasmon resonance (SPR) applications. This study presents a novel U-shaped multimode fiber-no-core fiber-multimode fiber (MMF-NCF-MMF) SPR sensor integrated with an Au film-Bi₂O₂Se&Au nanoparticles (AuNPs) composite system. Incorporating Bi₂O₂Se (an emerging 2D semiconductor with excellent optoelectronic properties) and AuNPs, the sensor leverages plasmon mode coupling between the Au film and AuNPs, plus the synergistic electron mobility regulation of Bi₂O₂Se&AuNPs, to boost refractive index (RI) sensitivity. The NCF reduces transmission loss and narrows the full width at half maximum (FWHM), enhancing target detection performance. At an MMF-NCF-MMF length ratio of 15mm:4mm:7mm, the composite-modified sensor achieves an RI sensitivity of 7552.31 nm/RIU—112.06% higher than the pure Au film sensor (3561.4 nm/RIU). It also exhibits a 14.3 nm FWHM reduction and a 1.24-fold figure of merit (FOM) increase (from 14.280 to 32.003), along with excellent temperature stability (RSD = 0.603%) and repeatability. For biomolecular validation, C-reactive protein (CRP)—a key clinical biomarker for inflammation and post-surgical infection—was targeted. The sensor shows reliable concentration-signal correlation (R² = 0.969) over 0.1–25 μg/mL, with a limit of detection (LOD = 3σ/S, IUPAC-recommended) optimized to 13.08 μg/mL at 1 μg/mL, aligning with clinical moderate inflammation ranges. By integrating SPR-localized surface plasmon resonance (LSPR) coupling and Bi₂O₂Se&AuNPs synergistic sensitization, this sensor holds substantial potential for clinical diagnosis and immunoassays.

Dual-Bidirectional Optoelectronic Bi2O2Se Single Crystal Enabled by Site-Selective O-Se Substitution for Self-Contained Scene Perception-Recognition-Interaction System

Yanan Liu,Zewen Li,Zongbo Feng,Chenhao Xu,Xinyu Luo,Baozeng Zhou,Yongxu Hu,Lei Zheng

Simultaneous integration of electrical bipolarity and bidirectional photoresponse enables enhanced dynamic scene perception, recognition, and interaction within a single device, represents a formidable yet actively pursued challenge, motivated by applications in intelligent autonomous driving, augmented reality, and related advanced technologies. Here, we report a site-selective O-Se substitution strategy, yielding, for the first time, enables electrically and optically bipolar charge transport in a single-crystalline Bi 2 O 2 Se 2D semiconductor. Their-based filed-effect transistors (FETs) show balanced ambipolar (P/N-type) carrier transport with a record-level of I ON / I OFF ratio over 6000, and broadband positive and negative photoconductivity (PPC/NPC) from 300 to 1400 nm selectively activated under opposite polarity bias conditions. This dual-bidirectional optoelectronic performance is attributable to a wavelength-dependent oxygen adsorption–desorption process that dynamically modulates the electronic band structure and charge transport characteristics. Moreover, we successfully demonstrate its integrated applications in high-dimensional secure optical communication, round-the-clock motion detection and recognition (MDR), and context-aware interaction to dynamic events. The result demonstrates seamless integration of multi-wavelength spectral sensing, in-sensor computing, and hardware-rooted secure communication within such Bi 2 O 2 Se devices, establishing a foundation for next-generation optoelectronic technologies.