JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Yinsheng Gu,Jia Sun,Tingyan Huang,Fang Wang,Yuchen Sheng,Yingwei Lu,Paifeng Luo
CsPbI 3 is a promising light-absorbing material for photovoltaics due to its excellent thermal stability and optimal bandgap. However, poor film quality and interfacial defects severely restricted the improvement of such devices. In addition, systematic studies on the selection of hole transport layers for inverted CsPbI 3 perovskite solar cells remain limited. In this work, we systematically compared the optoelectronic properties of four HTLs and their effects on the quality of CsPbI 3 films, including NiO X , MeO-2PACz, and their composite films. Specially, the NiO X /MeO-2PACz composite HTLs demonstrated improved substrate coverage and enhanced charge transport characteristics, thereby improving the crystallinity of CsPbI 3 films and the performance of the final device. Furthermore, dimethylammonium chloride (DMACl) compound was employed as a CsPbI 3 surface passivator, with Cl - compensating for I - vacancies to suppress Pb 0 defects and DMA + improving moisture stability. Additionally, the energy level mismatch between the ETL and PVK was significantly reduced after DMACl passivation. Through this dual-side synergistic strategy, the best-performing inverted CsPbI 3 PSCs achieve an impressive power conversion efficiency (PCE) of 15.05 % and a short-circuit current density (J sc ) of 20.9 mA cm −2 . Additionally, the unencapsulated optimized device retains 80 % of its initial PCE after 800 h of storage in dry air.
研究领域:
光伏
·
材料科学
·
半导体器件
·
薄膜技术
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Nano Research
·
2021
·Vol. 16
·期 4
·4888-4894
·
IF 8.897
Li Yanyan,Duan Linrui,Zhang Zhuang,Wang Huanhuan,Chen Tianyang,Luo Jingshan
Cesium lead iodide (CsPbl 3 ) is a promising photo-absorber for perovskite photovoltaics due to its high thermal stability and relatively small bandgap. However, there are many defects in solution processed polycrystalline CsPbl 3 films especially at the grain boundaries (GBs), which limit the power conversion efficiency (PCE) of CsPbl 3 solar cells. in this work, we introduced CsPbBr 3 quantum dots (QDs) on top of the CsPbl 3 film to passivate the defects. As CsPbBr 3 QDs have a small size and a similar crystal structure as the CsPbl 3 , they are excellent modifiers to fill in the GBs and heal the defects. Moreover, we find there is an anion exchange reaction between the CsPbBr 3 QDs and CsPbl 3 films, which is evidenced by photoluminescence spectra and grazing incidence X-ray diffraction patterns. The QDs treated films show enhanced carrier lifetime and reduced defect density. Additionally, the ligands on CsPbBr 3 QDs increase the hydrophobicity of the films. As a result, the QDs treated CsPbl 3 solar cells prepared at high temperature obtain PCEs exceeding 16% with high stability.
研究领域:
材料科学
·
太阳能电池
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2020
·Vol. 8
·期 7
·2381-2387
·
IF 7.059
Yihui Huang,Weiling Luan,Mengke Liu,Lyudmila Turyanska
All-inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, I) nanocrystals (NCs) have attracted considerable attention due to their tunable optical properties and high optical quantum yield. However, their stability in various environments, such as different solvents, high temperature and UV light, remains to be addressed to enable their exploitation in devices. Here, we report on the synthesis of all inorganic CsPbI3 perovskite nanocrystals capped with didodecyldimethylammonium bromide (DDAB). Monodispersed DDAB-capped CsPbI3 NCs have enhanced stability with respect to their morphological and optical properties compared to conventional oleic acid (OA)/oleylamine (OLA) capped nanocrystals. The DDAB-CsPbI3 NCs retain an optical quantum yield >80% for at least 60 days. The enhanced stability is explained by the binding of branched DDAB ligands to the NC surface, leading to the formation of a halogen-rich surface, as confirmed by X-ray photoelectron spectroscopy, with an iodine to lead atomic ratio of I : Pb = 4 : 1. These perovskites were used in light-emitting diodes (LEDs) and have a maximum external quantum efficiency (EQE) of 1.25% and a luminance of 468 cd m−2, and demonstrated improved operational performance. The enhanced stability of DDAB-CsPbI3 in the environments relevant for device processing and operation is relevant for their exploitation in optoelectronics.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
MRS Advances
·
2019
·Vol. 4
·期 36
·1973-1979
·
IF 0
Cong Zhao,Shichao Zhao,Yuanfang Zhao,Fang He,Ripeng Luo,Jingzhou Li,Shixi Zhao,Guodan Wei,Feiyu Kang
Cesium lead iodide perovskite (CsPbI3) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase CsPbI3 with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications1. However, the preferred cubic phase of bulk CsPbI3 (α-CsPbI3) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-CsPbI3) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-CsPbI3 film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of CsPbI3. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of CsPbI3 film by absorbing the precursor and increasing the nucleation density. The prepared CsPbI3 film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesiumiodide to form the CsPbI3. The successful preparation of the CsPbI3 by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices.
研究领域:
材料科学
·
纳米技术
·
光学工程
·
表面科学
·
无机化学
✓ 已验证
DOI
CHEMICAL ENGINEERING JOURNAL
·
2022
·
IF 16.744
Chunyan Lu,Xiaodong Li,Xuemin Guo,Sheng Fu,Wenxiao Zhang,Haobo Yuan,Junfeng Fang
CsPbI 3 perovskite shows great potential for photovoltaic applications due to its excellent photovoltaic performance and thermal stability. However, CsPbI 3 perovskite solar cells (PSCs) are extremely sensitive to moisture, and strict humidity control is necessary during its fabrication, limiting their further commercialization. Here, we report the fabrication of efficient CsPbI 3 PSCs in common air without humidity control through introducing humidity-assisted polymerizable additive of mercaptopropylme-methyldimethoxysilane (MMDS). During CsPbI 3 film formation, MMDS molecules can rapidly react with water in humidity air, and then self-polymerize to a water-resistant polymer at grain boundaries to reduce further moisture invasion. Moreover, -SH group in MMDS can passivate under-coordinated Pb 2+ and reduce the trap density in CsPbI 3 films. As a result, high efficiency of > 18 % is realized in inverted CsPbI 3 PSCs regardless of relative humidity among 40 ∼ 80 %. And the best efficiency reaches 19 %, which is among the highest efficiency of CsPbI 3 PSCs in inverted configuration. In addition, stability of MMDS-CsPbI 3 PSCs is also greatly improved and 88 % of initial efficiency can be retained after MPP tracking for 1000 h.
研究领域:
材料科学
·
光伏技术
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
NPG Asia Materials
·
2018
·Vol. 10
·期 6
·552-561
·
IF 7.208
Liu Chang,Hu Manman,Zhou Xianyong,Wu Jianchang,Zhang Luozheng,Kong Weiguang,Li Xiangnan,Zhao Xingzhong,Dai Songyuan,Xu Baomin,Cheng Chun
Although great efforts have been devoted to enhancing the efficiency and stability of perovskite solar cells (PSCs), the performance of PSCs has been far lower than anticipated. Interface engineering is helpful for obtaining high efficiency and stability through control of the interfacial charge transfer in PSCs. This paper demonstrates that the efficiency and stability of PSCs can be enhanced by introducing stable α-CsPbI 3 quantum dots (QDs) as an interface layer between the perovskite film and the hole transport material (HTM) layer. By synergistically controlling the valence band position (VBP) of the perovskite and the interface layer, an interface engineering strategy was successfully used to increase the efficiency of hole transfer from the perovskite to the HTM layer, resulting in the power conversion efficiency increasing from 15.17 to 18.56%. In addition, the enhancement of the stability of PSCs can be attributed to coating inorganic CsPbI 3 QDs onto the perovskite layer, which have a high moisture stability and result in long-term stability of the PSCs in ambient air.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Wei Wei,Wen Chen,Xizhu Zhao,Zifan Yang,Yueli Liu
All-inorganic CsPbI 3 quantum dots perovskite solar cells (QDPSCs) have wide potential application due to their excellent photoelectric properties with high environmental stability. However, the poor interface contact between the light absorption layer and hole transport layer (HTL) results in the serious carrier recombination and the large open-circuit voltage ( V OC ) loss. Herein, we introduce the insulating PMMA (poly(methyl methacrylate)) buffer layer into CsPbI 3 quantum dots (QDs)/Cu 12 Sb 4 S 13 QDs HTL interface in all-inorganic QDPSCs with the structure of FTO/c-TiO 2 /m-TiO 2 /CsPbI 3 QDs/Cu 12 Sb 4 S 13 QDs/Au. The interface carrier recombination is obviously suppressed and the significant V OC improvement from 1.04 V to 1.14 V is obtained with the incorporated PMMA buffer layer. The devices with PMMA buffer layer show the enhanced power conversion efficiency (PCE) of 10.99%, and the improvement of 9.71% is achieved compared to that of the control devices (10.02%). The stability is significantly enhanced due to the intrinsic hydrophobic characteristic of PMMA, and the devices retain 62.69% of their initial PCE after stored in air condition for 15 days, which is greatly improved compared with the control device without PMMA.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Nano
·
2023
·
IF 17.1
Jie Guo,Min Lu,Xiaoyu Zhang,Siqi Sun,Ce Han,Yu Zhang,Xuyong Yang,Stephen V. Kershaw,Weitao Zheng,Andrey L. Rogach
Orthorhombic γ-CsPbI3 possesses the highest structural stability among the optically active (light-emissive) CsPbI3 perovskites. Here, we make use of a seed-assisted heteroepitaxial growth to fabricate seed/core/shell CaIx/γ-CsPbI3/CaI2 nanocrystals. Ultrasmall CaIx nanoparticles serve as seeds to template the Pb-centered octahedral arrangement which enables the formation of the γ-CsPbI3 phase and at the same time inhibit lattice strain by blocking the force transfer that otherwise leads to an octahedral twist and so improve the structural stability of the resulting nanocrystals. An outer shell composed from the same material, CaI2, isolates the formed γ-CsPbI3 nanocrystals from the environment, which also significantly improves their stability under ambient conditions. Optical and electrical studies indicate that the seed/core/shell CaIx/γ-CsPbI3/CaI2 structure possesses a shallower set of trap states as compared to cubic α-CsPbI3 nanocrystals. Light-emitting diodes utilizing these γ-CsPbI3 nanocrystals show a record high external quantum efficiency of 25.3%, high brightness of over 13600 cd/m2, and an operational lifetime of ∼14 h before reaching 50% of their initial luminance. These devices can repeatedly be illuminated over 650 times at ∼500 cd/m2 with no decline of brightness, which indicates their great commercial potential.
研究领域:
材料科学
·
光学工程
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
NANOTECHNOLOGY
·
2024
·Vol. 36
·期 9
·095203
·
IF 2.9
Xiaozong Huang,Wen Li,Linghang Kong,Xiaoyan Lu,Chengzhi Yang,Bingsuo Zou
Due to the easy transformation to the non-luminous yellow δ-CsPbI3 phase in air, α-CsPbI3 nanocrystalline materials with red light emission find limited applications. Lifting its structural stability is a challenge in its quantum dot (QD) lighting field. Here we studied the doping of Mn2+ ions (5.0%) and processing by a small amount (0.315 ml) of TOP molecules on the OA-capped CsPbI3 nanocrystals. It is found that after the successful introduction of Mn2+ into the CsPbI3 nanocrystal, the grain size reduces, which leads to a stronger quantum confinement effect than the undoped QDs, which leads to the blue shift of PL and absorption spectra. The incorporation of Mn2+ simultaneously reduced defects and lifted the luminescence efficiency and lifetimes of QDs, the cause for the above optical behavior is due to the formation of excitonic magnetic polaron (EMP) excitons near the bandedge. On the other hand, the treated TOP molecule on the OA-capped NCs did not significantly affect their room-temperature luminescence. However, it improved the low-temperature emission performances of QDs significantly. Moreover, the TOP-treated QDs fixed in the PMMA film can transform into rod-like shapes in acidic environments, giving strong stability for emission, especially for the Mn-doped CsPbI3 QDs. This work has been done to improve the stability and emission efficiency of related QDs through the EMP formation near band-edge and surface modification of CsPbI3 NCs, favoring their potential applications in display and low-temperature light-emitting devices.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2022
·Vol. 35
·期 7
·2207172
·
IF 32.086
Chenzhe Xu,Suicai Zhang,Wenqiang Fan,Feiyu Cheng,Haochun Sun,Zhuo Kang,Yue Zhang
Although CsPbI 3 perovskites have shown tremendous potential in the photovoltaic field owing to their excellent thermal stability, the device performance is seriously restricted by severe photovoltage loss. The buried titanium oxide/perovskite interface plays a critical role in interfacial charge transport and perovskite crystallization, which is closely related to open-circuit voltage deficit stemming from nonradiative recombination. Herein, target molecules named 3-sulphonatopropyl acrylate potassium salts are deliberately employed with special functional groups for modifying the buried interface, giving rise to favorable functions in terms of passivating interfacial defects, optimizing energetic alignment, and facilitating perovskite crystallization. Experimental characterizations and theoretical calculations reveal that the buried interface modification inhibits the electron transfer barrier and simultaneously improves perovskite crystal quality, thereby reducing trap-assisted charge recombination and interfacial energetic loss. Consequently, the omnibearing modification regarding the buried interface endows the devices with an impressive efficiency of 20.98%, achieving a record-low V OC deficit of 0.451 V. The as-proposed buried interface modification strategy renders with a universal prescription to push the limit of V OC deficit, showing a promising future in developing high-performance all-inorganic perovskite photovoltaics.
研究领域:
材料科学
·
光伏技术
·
能源研究
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2020
·
IF 4.65
Junsen Zhang,Cheng Wang,Hao Fu,Li Gong,Haiping He,Zhishan Fang,Conghua Zhou,Jianlin Chen,Zisheng Chao,Jincheng Fan
In this paper, hole-free, carbon-based all-inorganic CsPbI 3 perovskite solar cells (PSCs) with the structure of F-doped SnO 2 (FTO)/ZnO/CsPbI 3 /C are fabricated at a low temperature for the first time. Excess CsBr is added into CsPbI 3 precursor solution to obtain stable black phase CsPbI 3 at a low temperature (120 °C). ZnO is prepared by a spin-coating method at 120 °C. And then the C electrode is prepared by a doctor-blade method at 120 °C. The effect of different layers of ZnO on the performance of solar cells is investigated. The champion power conversion efficiency (PCE) of the solar cell based on 3 layers of ZnO is 10.95%, with a short-circuit current ( J SC ) of 17.66 mA/cm 2 , an open-circuit voltage ( V OC ) of 0.91 V and a fill factor ( FF ) of 68%, which is the best performance for hole-free, carbon-based all-inorganic CsPbI 3 PSCs fabricated at a low temperature, compared with the other reported results. The encapsulated device remained 91% of the initial PCE after being stored in a glove box for 5 months. For further application in flexible solar cells, the solar cells with the structure of PET/Sn-doped In 2 O 3 (ITO)/ZnO/CsPbI 3 /C are fabricated under the best parameter conditions and the PCE of 8.70% is obtained.
研究领域:
材料科学
·
能源技术
·
光伏器件
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2021
·
IF 4.094
Xianhao Min,Qifei Xie,Zhiguo Wang,Xinzhong Wang,Mingxiang Chen
As traditional capping ligands like oleic acid (OA) and oleylamine (OLA) cannot efficiently maintain the optoelectronic properties and stability of iodide perovskite nanocrystals (NCs), post synthesis surface modification with some other ligand is a convenient and valid method to solve these problems to some extent. Here we promote a long carbon chain ligand with a thiol group, 1-Octadecanethiol (ODT), to realize the passivation of the surface of CsPbI 3 NCs after the synthesis process. After modification, our ODT-CsPbI 3 NCs exhibit excellent optical properties with a high PLQY of 93% and outstanding stability under different conditions compared to the untreated samples.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）