ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Jingyu Lin,Junhao Jiang,Yukang Zhou,Qianqian Fan,Qixin Zhuang,Puke Mi,Wei Yin,Peiyuan Zuo
Mixing fillers featured with wide band gaps in polymers can effectively meet the requirement of higher energy storage densities. However, the fundamental relationship between the crystal structures of fillers and the dielectric properties of the corresponding nanocomposites is still unclear. Accordingly, we introduced ultralow contents of the synthesized cubic Hafnium dioxide (c-HfO2) or monoclinic Hafnium dioxide (m-HfO2) as deep traps into poly(ether imide) (PEI) to explore their effects on dielectric properties and the charge-blocking mechanism. m-HfO2/PEI showed better charge trapping due to the higher electron affinity and deeper trap energy. At room temperature, the 0.4 vol % m-HfO2/PEI maintains an ultralow dielectric loss of 0.008 while obtaining a dielectric constant twice that of pure PEI at 1 kHz, simultaneously outperforming in terms of leakage current density, breakdown strength (452 kV mm–1), discharge energy density (Ud, 5.03 J cm–3), charge–discharge efficiency (η, 92%), and dielectric thermal stability. At 125 °C, it exhibits a considerable Ud of 2.48 J cm–3 and a high η of 85% at 300 kV mm–1, surpassing the properties of pure PEI. This promising work opens up a new path for studying HfO2-derived dielectrics with unique crystal structures.
研究领域:
材料科学
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电气工程
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ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Ruidong Li,Lu Wu,Ganggang Chang,Shanchao Ke,Yilong Wang,Yao Yao,Yuexing Zhang,Junsheng Li,Xiaoyu Yang,Banglin Chen
Carbon materials with hierarchical morphologies, pores, and compositions have attracted extraordinary attention due to their unique structural advantages and widespread applications. However, their controllable synthesis remains a grand challenge. Herein, a solvent-mediated strategy was demonstrated for the preparation of an urchin-like superstructure via modulating the hydrothermal condition (acetic acid/water ratio) of metal–organic frameworks (MOFs). The direct pyrolysis of a hierarchical NUS-6 precursor produced a well-defined carbon-based composite consisting of sulfur-doped carbon (SC) and HfO2 with an urchin-like morphology and micro-/mesoporosity, while the doped S sites and oxygen vacancies of HfO2 can help to anchor and activate Pd nanoparticles (NPs) through the strong host–guest interaction, which was further confirmed by the calculated results of the binding energy and differential charge density through density functional theory (DFT). The synthesized Pd@SC/HfO2 composite exhibited extremely high catalytic activity and stability toward the water-phase hydrodeoxygenation of vanillin (conversion >99%, selectivity >99%), as well as good universality for the hydrogenation of a series of unsaturated hydrocarbons in an aqueous system. Remarkably, the catalytic activity and structural stability of Pd@SC/HfO2 were largely maintained even after successive 10 cycles.
研究领域:
材料科学
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化学工程
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高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2023
·
IF 15.1
Xian Shi,Xinyi Xing,Mengya Ruan,Qichun Wei,Ying Guan,Hui Gao,Siquan Xu
Efficient and green catalysis of cellulose to 5-hydroxymethylfurfural (HMF) is currently a challenge that needs a breakthrough. In this study, a series of inexpensive (x)SO 4 2- /HfO 2 heterogeneous catalysts were prepared and exhibited superior catalytic performance for conversion of cellulose into HMF in the green water-tetrahydrofuran monophasic system (H 2 O-THF). An optimal HMF yield of 54% was acquired through detailed evaluation of reaction conditions. Various analyzes including ICP-OES, XRD, SEM, TEM, FTIR, N 2 adsorption–desorption isotherm, XPS, TG, NH 3 -TPD and Py-FTIR were applied to inspected the physicochemical characteristics of the (x)SO 4 2- /HfO 2 catalysts. Meanwhile, the recyclability of the catalyst and the by-products generated during the reaction process were studied and captured, respectively. The results presented herein show that the catalytic system of (30%)SO 4 2- /HfO 2 catalyst combined with H 2 O-THF monophasic solvent is advanced, and it can be both green and efficient without the presence of other additives and promoters, and has great potential in the future.
研究领域:
化学工程
·
可再生资源转化
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JOURNAL OF ALLOYS AND COMPOUNDS
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2026
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IF 6.7
Yanfang Zhu,Dongdong Kang,Zhiyuan Huang,Guiyang Xu
Photocatalytic H 2 production and pollutant degradation using solar-driven processes are promising approaches for sustainable energy conversion. However, the reaction efficiency is inadequate due to rapid carrier (e -/ h + ) recombination and poor catalyst stability. In this work, we report a novel heterostructure comprising iridium-modified Cu-MOF coupled with sulfur-doped HfO 2 (S-HfO 2 ), termed as Ir-Cu-MOF/S-HfO 2 composite, to investigate photocatalytic H 2 production and bisphenol-A (BPA) degradation. Advanced characterization studies, such as X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM & TEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), and electron spin resonance (ESR), were used to explicate the structural, morphological, electronic, and charge transfer performances of the Ir-Cu-MOF/S-HfO 2 composite. Under LED-light irradiation, the Ir-Cu-MOF/S-HfO 2 photocatalyst displays a H 2 evolution rate of 12.98 mmol g -1 h -1 using triethanolamine (TEOA) as a sacrificial agent. Simultaneously, it achieves 96% degradation of bisphenol-A (BPA) within 120 min, with a rate constant of 0.018 min -1 , representing superior bifunctional photocatalytic activities. Characteristics studies suggest that the synergistic interaction between Ir-infused Cu-MOF active centres and defect-rich S-HfO 2 facilitates the efficient separation and migration of photogenerated charge carriers. Moreover, the Ir-Cu-MOF/S-HfO 2 photocatalyst exhibits good stability and reusability over prolonged cycles. This study provides valuable insights into the clear design of noble metal-modified MOF-based heterostructures and highlights their potential for integrated solar-driven hydrogen production and environmental pollutant abatement.
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JOURNAL OF COLLOID AND INTERFACE SCIENCE
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2026
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IF 9.6
Binyi Chen,Shoujing Wei,Yunyun Lei,Xinfan Zhao,Yubin Zhao,Huijie Tian,Ziqian Lu,Liubiao Zhong,Wei Gan,Yejun Qiu,Qunhui Yuan
Poly(vinylidene fluoride) (PVDF) based electrolytes are promising for lithium metal batteries, yet they suffer from low ionic conductivity, severe Li-metal side reactions, and poor dendrite suppression. This study presents a synergistic modification strategy integrating HfO 2 nanoparticles with ionic liquid to develop a high-performance composite electrolyte (PVHE). The incorporated HfO 2 nanoparticles adsorb residual dimethylformamide (DMF) solvent to suppress interfacial side reactions, while simultaneously facilitating the in-situ formation of a Hf-containing stable solid electrolyte interphase (SEI) that improves interfacial stability and inhibits lithium dendrite growth. The ionic liquid enhances the ionic conductivity by reducing the crystallinity of PVDF and regulating the solvation structure, synergistically achieving multiple performance breakthroughs with HfO 2 . The PVHE composite electrolyte exhibits an ionic conductivity of 5.75 × 10 −4 S cm −1 at 30 °C and a critical current density of 2.4 mA cm −2 . The Li|PVHE|Li cell cycles stably for over 1500 h at 0.1 mA cm −2 , and the Li|PVHE|NCM811 cell shows a capacity retention of 80.7% after 500 cycles at 1C. The multicomponent synergistic modification strategy offers a viable pathway toward the practical application of PVDF-based electrolytes and advances the understanding of the interactions among components in composite electrolyte systems.
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Surfaces and Interfaces
·
2024
·
IF 5.7
Jingyu Lin,Xiaohan Wu,Yifan Xia,Lingzhi Nie,Peiyuan Zuo,Puke Mi,Qixin Zhuang
Polyetherimide (PEI) has great potential as a dielectric because of its high-temperature resistance, but its low energy storage density limits practical applications. Incorporating hafnium dioxide (HfO 2 ) with a moderate dielectric constant ( k ) and wide bandgap can simultaneously enhance the polarization intensity of PEI and potential barriers for charge injection . Nevertheless, the poor compatibility between HfO 2 and PEI inevitably introduces defects, thereby weakening the inhibitory effect on dielectric loss . To tackle this issue, an organic double interface layer is introduced to enhance dielectric performance, where the polar poly(arylene ether urea) (PEEU) containing hydrogen bonds can ensure the layer's compactness. Notably, its non-bonding urea groups serve as deep traps to capture migrating carriers, and the gradient k values of HfO 2 , PEEU, and PEI help mitigate electric field distortions at the interface, therefore enhancing the suppression of conduction loss . The polarity of PEEU and the introduction of multiple interfaces significantly contribute to an increased k (maximum 9.7, at 1 kHz). At 300 kV mm −1 , 5 vol% PEEU@HfO 2 /PEI achieves a discharged energy density of 3.3 J cm −3 and a high charge-discharge efficiency of 83 %, surpassing 5 vol% HfO 2 /PEI by 1.95 and 2.44 times, respectively. The further COMSOL simulation verifies and proves this work as a novel design strategy for nanocomposite dielectrics.
研究领域:
材料科学
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电气工程
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高影响因子
ACTA MATERIALIA
·
2021
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IF 8.203
Zhi Dong,Zongqing Ma,Yongchang Liu
Powder metallurgy generally is a preferred method to consolidate and prepare some refractory metals considering their high melting temperatures. However, sintering such materials to high density while maintaining fine grain structure is challenging, and generally require ultrahigh temperature or need to be assisted by external pressure. Especially, the preparation of nanostructured oxide dispersion strengthened (ODS) refractory metals at low temperature is more difficult because grain coarsening and densification are simultaneously hindered by the common oxide addition. Thus, it is of great sense to explore a kind of oxide that can be used as both strengthening phase and sintering accelerator. In this work, after extensive theoretical calculation and experimental observation, it is found that the accelerated sintering at low temperature can be achieved in W-HfO 2 system. In the absence of external pressure or activator, this system can be rapidly densified without undesirable grain coarsening at a relative low temperature of only 1480 ˚C. Through kinetic analysis and density functional theory (DFT) calculation, it was confirmed that the intergranular HfO 2 particles provide a rapid diffusion transport pathway for W atoms in support of densification at temperature of interest. As a result, this alloy exhibits a homogeneous microstructure with ∼97% relative density and ∼200 nm grain size , which renders our alloy with an ultrahigh compressive strength of ∼3 GPa, much higher than the reported values. We believe that the accelerated sintering mechanism found in our W-HfO 2 system can be applicable to other refractory metals to prepare high-density nanocrystalline alloys with excellent properties.
研究领域:
材料科学
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冶金学
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固体物理学
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机械工程
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高影响因子
Materials
·
2026
·Vol. 19
·期 10
·1954
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IF 3.7
Jialeen Sairike,Kamale Tuokedaerhan,Serikbek Sailanbek,Zhengang Cai,Haotian Yang
HighlightsSystematic elucidation of annealing-temperature-dependent evolution of oxygen vacancies, M–O network densification, and crystallisation behaviour in sol–gel HfO2, directly correlating with TFT electrical performance and band alignment.All-solution-processed HfO2high-K gate insulator and IZO active layer are achieved via the sol–gel method, eliminating expensive vacuum equipment.The optimised 85 nm HfO2insulator annealed at 400 °C delivers outstanding device metrics (Ion/off= 1.11 × 106, SS = 0.53 V/dec, Vth = −1.1 V), proving that solution-derived HfO2is a viable and scalable alternative to conventional SiO2for TFT miniaturisation without performance trade-off.With the continuous advancement of display technology and advanced integrated circuits, oxide thin-film transistors (TFTs) have become core devices due to their high mobility, low leakage current and excellent large-area uniformity. To achieve low power consumption, high performance and high reliability, the introduction of high-k gate insulating layers is crucial. Among the numerous high-k materials, hafnium oxide (HfO2) has attracted significant attention due to its excellent dielectric properties and good compatibility with CMOS processes. In this paper, uniform and dense HfO2films were successfully fabricated using the sol–gel method to serve as insulating layers for TFT devices. Through experimental analysis, 400 °C was determined to be the optimal annealing temperature. At this temperature, the effects of replacing SiO2with HfO2as the insulating layer, as well as the impact of reducing film thickness, on TFT devices were investigated. Ultimately, at an annealing temperature of 400 °C, an 85 nm-thick HfO2film achieved the highest on/off current ratio (Ion/off= 1.11 × 106), the lowest subthreshold swing (SS = 0.53 V/dec), the lowest threshold voltage (Vth = −1.1 V) and the lowest off-current ratio (Ioff= 2.5 × 10−12A). It was confirmed that replacing SiO2with HfO2as the insulating layer is a viable approach for reducing the volume of TFT devices.
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ACS Applied Materials & Interfaces
·
2025
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IF 8.2
Fawad Saeed,Rai Muhammad Dawood Sultan,Nasrud Din,Ibtissem Belaid,Ali Asghar,Abida Parveen,Damian Chinedu Onwudiwe,Byung Seong Bae,Mehmet Ertugrul,Ying Zhu,Sajid Hussain,Qasim Khan,Lei Wei
Near-infrared (NIR) detection is essential for applications in optical communications, biomedical imaging, and environmental monitoring. However, conventional NIR photodiodes face inherent trade-offs between responsivity and noise, largely due to thermal excitation in narrow-bandgap materials often necessitating cryogenic cooling to achieve an acceptable performance. In this study, we demonstrate a vertical field-effect NIR phototransistor (VFEPT) that integrates a mixed lead selenide quantum dot (PbSeQD)–hafnium dioxide nanoparticle (HfO2 NP) sensing layer with a porous gold nanowire source, enabling significantly improved photodetection capabilities. The high permittivity of HfO2 facilitates substantial charge accumulation and modulates the Schottky junction, while its low electrical conductivity suppresses leakage current even in the presence of narrow-bandgap PbSeQDs. This synergistic configuration effectively reduces the dark current, minimizes noise, and enhances detectivity. Additionally, the large capacitance between the gate and the source boosts charge accumulation, resulting in an amplified photocurrent and enhanced responsivity. Under NIR illumination, PbSeQDs efficiently absorb photons and generate electron–hole pairs, reinforcing the gate–source electric field and further increasing charge accumulation, thereby yielding a substantial photocurrent gain while maintaining low noise levels. The proposed VFEPT achieves a high responsivity of 256 A W–1 and a detectivity of 2.5 × 1015 Jones at 1550 nm, outperforming conventional NIR photodiodes and demonstrating exceptional potential for low-noise, high-responsivity NIR detection.
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JOURNAL OF THE AMERICAN CERAMIC SOCIETY
·
2020
·Vol. 104
·期 2
·785-792
·
IF 3.502
Jinhua Zhang,Si Xiong,Jingran Wang,Yue’e Ni,Changming Ke
Phase pure and nano-sized hafnium diboride (HfB 2 ) fine powder was prepared via a novel sustainable silicothermic route at 1100°C from inexpensive raw materials HfO 2 , Na 2 B 4 O 7 and Si. By introducing sodium oxysalts as source of Na 2 O into the batch mixtures, the SiO 2 / Na 2 O modulus in the melt were reduced from 5:1 to 2:1, and the original water-insoluble byproduct SiO 2 was taken by the melt at test temperature and converted into water soluble sodium silicate (Na 2 Si 2 O 5 ) which was easily removed from the reacted mass via simple hot water washing. Consequently, the aqua sodium silicate could be readily recycled and used as a precursor for preparing many other valuable materials due to absence of foreign salts (eg halides, especially in the molten salt-assisted synthesis process) in the synthesis process, and the relevant environmental concerns could be alleviated. Using excessive amount of 20 wt% Si and 15 wt% Na 2 B 4 O 7 as compensation for the evaporation loss of silicon, in the form of SiO (g), and B 2 O 3 in the reduction process, a high reaction extent was achieved and HfO 2 and Na 2 B 4 O 7 were completely converted into HfB 2 at 1100°C.
研究领域:
材料科学
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化学工程
·
可持续化学
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高影响因子
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