ACS Applied Electronic Materials
·
2019
·
IF 0
Weihao Wang,Qiufan Liao,Xiaoli Peng,Qiaoqi Lu,Zhao Li,Tao Zhang,Fengzhi Wang,Xinhua Pan,Yu-Jia Zeng,Zhizhen Ye
Tin monoxide (SnO) is a p-type semiconductor which is promising in field effect transistors (FETs) applications. However, nanostructure SnO has hardly been applied in FETs due to its stability issue. Herein, oleylamine protected Ag@SnO core–shell nanostructures have been synthesized by a hydrothermal method and configured as FETs. X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy measurements are carried out to confirm the formation of pure phase SnO. The Ag@SnO core–shell single nanostructure FETs and thin film transistors are successfully fabricated on Si/SiO2 substrates. The doping of Ag in SnO and the formation of Schottky junction between SnO and Ag effectively improve the performance of FETs. The Ag nanowire (NW) core provides the unhindered carrier transport route, and the Schottky junction formed between Ag NW and SnO effectively constrains the leakage current. The nanostructure FETs show typical p-type characteristics with a premium on/off ratio (Ion/Ioff) of 3.3 × 105, a subthreshold swing of 0.09 V dec–1 and a high p-type field effect mobility (μFE) of 1.93 cm2 V –1 s –1. The excellent properties of Ag@SnO NWs FETs promise to be important for the next-generation p-type FETs.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
Polymers
·
2023
·Vol. 15
·期 18
·3713
·
IF 5
Shiwei Ren,Zhuoer Wang,Wenqing Zhang,Yubing Ding,Zhengran Yi
Organic polymer semiconductor materials are conveniently tuned to energy levels because of their good chemically modifiable properties, thus enhancing their carrier transport capabilities. Here, we have designed and prepared a polymer with a donor-acceptor structure and tested its potential as a p-type material for organic field-effect transistor (OFET) applications using a solution-processing method. The conjugated polymers, obtained via the polymerization of the two monomers relying on the Stille coupling reaction, possess extremely high molecular weights and thermodynamic stability. Theoretical-based calculations show that PDPP-2S-Se has superior planarity, which is favorable for carrier transport within the main chain. Photophysical and electrochemical measurements systematically investigated the properties of the material and the energy levels with respect to the theoretical values. The maximum hole mobility of the PDPP-2S-Se-based OFET device is 0.59 cm2V−1s−1, which makes it a useful material for potential organic electronics applications.Keywords:p-type semiconductor materials;conjugated polymer;Stille coupling;OFET device;hole mobility
研究领域:
材料科学
·
有机电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2025
·
IF 9.7
Bao-Hui Shao,Tong-Yu Li,Wen-Yi Sun,Ke Hu,Chun-Hao Chang,Xin-Yi Luo,Qing-Xin Meng,Wen-Hao Geng,Di Zhang,Hong-Zhang Geng
Recent industrial advancements have accelerated the development of thermoelectric devices for waste heat recovery and energy conversion. The fabrication of both n-type and p-type thermoelectric materials from the same substance has attracted broad research interest. In this study, p-type and n-type thermoelectric films were prepared using single-walled carbon nanotubes (SWCNTs) and Cu 2 O, with only minor differences in processing and composition. The two types of films exhibited distinct properties, which correlated with different crystal morphologies of Cu₂O: a rice-like microstructure in the p-type material and spherical microstructure in the n-type material. After p-type doping with Cu 2 O, the optimal Seebeck coefficient increased from 16 μV·K −1 to 41.2 μV·K −1 , while the electrical conductivity decreased from 67,891 S·m −1 to 2338.5 S·m −1 . The p-type SWCNT/Cu 2 O film achieved a maximum ZT value of 0.018, approximately 60 times higher than that of pure SWCNTs. For the n-type doped film, the Seebeck coefficient changed from 16 μV·K −1 to −17.6 μV·K −1 , and the electrical conductivity decreased to 27,828.5 S·m −1 , yielding a maximum ZT of 0.012—about 40 times higher than pure SWCNTs. A device consisting of six pairs of p-type and n-type films generated a voltage of up to 34.56 mV at a temperature difference of 100 K, demonstrating excellent thermoelectric performance. Both composite films also showed outstanding electrothermal properties: the p-type film reached 295 °C at 7 V with stable heating at 6 V, while the n-type film reached 335 °C at 6 V and exhibited good stability at 3.5 V. This work offers a simple and effective strategy for designing high-performance p-type and n-type thermoelectric materials from the same base system.
研究领域:
材料科学
·
凝聚态物理
·
纳米科技
·
能源材料
·
热电转换
✓ 已验证
产品关联
DOI
PubMed
高影响因子
RSC Advances
·
2017
·Vol. 7
·期 38
·23415-23421
·
IF 3.108
Sheng Yuan,Ming-Jian Zhang,Xiaoyang Yang,Zongwei Mei,Yongji Chen,Feng Pan
MoS2, a representative two-dimensional transition metal dichalcogenide, gains significant interest due to its unique layered structure and electronic structure. In this work, a novel MoS2-based hybrid thin film was constructed by disordered stacking of MoS2–NMP hybrid particles, which were mainly composed of MoS2(NMP)3 molecules stacking in a nearly-parallel manner through S⋯H–C hydrogen bonds. Interestingly, it presents a higher work function (5.42 eV) than Au (5.32 eV), and a unique thickness-dependent conductivity with p-type semiconductor characteristic. Using it as the back contact of CdTe solar cells, the efficiency was improved by 2.6% compared to the traditional cells, mainly from the great improvement in short-circuit current density (Jsc). This significant improvement in solar performance was ascribed to the matchable energy levels at the CdTe/MoS2-based thin film interface and its unique thickness-dependent conductivity. This work opens a new direction for the extensive applications of TMD-based materials.
研究领域:
材料科学
·
光伏技术
·
纳米材料
·
半导体物理
·
表面科学
·
能源材料
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Yang-Wei Wang,Yu Wang,Hao Liang,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge
Bismuth telluride-based materials has been applied in thermoelectric cooling wildly, but the properties still can be further enhanced by doping, microstructure controlling and compositing strategies. Herein, we demonstrate an anomalous doping strategy in (Bi, Sb) 2 Te 3 (BST) materials, where the strong n type dopant of PbBr 2 acts as p-type dopant, introducing holes in BST materials. The anomalous doping is attributed to the dissolution of Pb and Br elements into the matrix in a non-stoichiometric ratio, with Pb predominantly occupying Sb vacancies and Br enriching the in-situ generated Sb 2 O 3 , resulting in the increased hole concentration and improved electrical conductivity. The maximum power factor (PF) ultimately increases to 3972 μW m −1 K −2 for the 0.3 mol% PbBr 2 doped BST sample. Moreover, the enhanced multi-scale wavelength phonon scattering centers cause the lattice thermal conductivity fall to 0.52 W m −1 K −1 . Finally, the peak ZT is effectively enhanced to 1.3 at 323 K, which is 22 % higher than that of pristine sample. Furthermore, a direct conversion efficiency of 4.6 % is achieved in a single 0.3 mol% PbBr 2 -doped BST leg at a temperature gradient of ΔT = 200 K. Thus, this study underscores the anomalous PbBr 2 doping in Bi 0.42 Sb 1.58 Te 3 , promoting the wider application of BST-based materials.
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电转换
·
半导体掺杂
✓ 已验证
DOI
高影响因子
Journal of Energy Chemistry
·
2017
·Vol. 27
·期 2
·413-418
·
IF 2.594
Yanyun Zhang,Xichuan Yang,Weihan Wang,Xiuna Wang,Licheng Sun
X1 (MeO-TPD) is an inexpensive and easily synthesized π -conjugated molecule that has been used as a hole-transport material (HTM) in solid-state dye-sensitized solar cells (ssDSSCs), achieving relatively high efficiency. In this paper, we characterize the physicochemical properties of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) and show that it is a promising p-dopant in a spin-coating solution with X1 as the HTM. The doped ssDSSCs showed an increase in short-circuit current density from 5.38 mA cm –2 to 7.39 mA cm –2 , and their overall power conversion efficiency increased from 2.9% to 4.3%. Also, ssDSSCs with DDQ-doped X1 were more stable than the undoped samples, demonstrating that DDQ can act as a p-type dopant in X1 as an HTM for highly efficient, stable ssDSSCs.
研究领域:
材料科学
·
能源化学
·
光伏技术
·
纳米材料
·
半导体器件
·
表面化学
·
电化学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Jian Chen,Yifan Wang,Jiajia Gao,Jialiang Tian,Yuelong Ma,Wei Shen,Kun Cao,Yingying Fu,Lihui Liu,Shu-Fen Chen
The inferior hole injection efficiency in blue perovskite light-emitting diodes (PeLEDs), caused by the large hole injection barrier and low hole mobility of conventional hole transport layers (HTLs), remains a critical limitation to achieving higher external quantum efficiency (EQE) and device stability. To address this challenge, we propose a rational interfacial engineering strategy employing p-type molecular doping to optimize device performance. By incorporating 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ) as a dopant in the poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) HTL, we significantly enhance hole mobility from 3.96×10⁻⁶ to 1.13×10⁻⁴ cm²/(V·s) and adjust the highest occupied molecular orbital energy level from -5.40 to -5.56 eV, facilitating efficient hole carrier injection and transport. Additionally, perovskite films deposited on the doped HTL exhibit improved crystallinity and a reduced defect density from 3.47×10¹⁸ to 3.18×10¹⁷ cm⁻³. Owing to these synergistic improvements, the optimized blue PeLEDs achieve a maximum EQE of 4.57% with an emission peak at 484 nm, representing a 4.02-fold enhancement over the pristine device. This work highlights the effectiveness of molecular doping in tailoring interfacial properties and balancing charge transport for high-performance blue PeLEDs.
研究领域:
材料科学
·
光电子学
·
高分子科学
·
半导体器件
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS CHEMISTRY
·
2011
·Vol. 21
·期 18
·6736-6741
·
IF 5.101
Xiwei Zhang,Jiansheng Jie,Zhi Wang,Chunyan Wu,Li Wang,Qiang Peng,Yongqiang Yu,Peng Jiang,Chao Xie
Single-crystal p-type ZnSe nanowires (NWs) with zinc blende structure and [21–1] growth direction were synthesized by using bismuth (Bi) as dopant via a thermal co-evaporation method. The ZnSe : Bi NWs showed evident p-type conductivity with hole concentration up to 4.1 × 1018 cm−3 after the acceptor activation. Negative photoconductivity was first investigated in the p-ZnSe NWs, i.e., the conductivity of the NWs under light was dramatically lower than that in the dark. Surface effects arising from oxygen absorption and photo-desorption were suggested to be responsible for this. By using Al as the Schottky gate, high-performance nano-metal-semiconductor field-effect transistors (nanoMESFETs) were constructed, and measurements on the Al/p-ZnSe NW Schottky diode also revealed the bias-dependent photoresponse. It is expected that the p-type ZnSe : Bi NWs will have great potential in nano-optoelectronic applications.
研究领域:
材料科学
·
半导体物理
·
纳米技术
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2017
·Vol. 28
·期 16
·11563-11568
·
IF 2.019
Sun Xinjie,Tong Hua,Yuan Xiao,Liu Cui,Yuan Shuanglong,Chen Guorong,Yang Yunxia
Thermal boron diffusion, which forms highly doped and shallow p-emitters on phosphor-doped silicon wafers, is one of the primary processes in commercial-scale production of n-type cells. Here, we report on the use of nontoxic and nonvolatile borosiloxane sols as the spin-on boron source. In comparison to the tribromide (BBr 3 ) boron diffusion that is applied in the production of most commercial n-type cells, borosiloxane boron diffusion may have potential advantages in terms of cost, safety, operability, etc. The borosiloxane sols studied here were formed from a cross-linking reaction between boron acid and a mixture of two types of silicon alkoxides, methyltriethoxysilane (MTEOS) and dimethyldiethoxysilane (DMDEOS). The MTEOS/DMDEOS ratio was found to be the key factor determining the synthetic period, net structure, thermal transformation property, and coating behavior of the borosiloxane sols. In combination with the spin-coating method, the performance of borosiloxane boron diffusion into phosphor-doped silicon wafers (1–3 Ω·cm) was systematically investigated by varying the borosiloxane composition (boron/silicon or MTEOS/DMDEOS ratio) and the diffusion process parameters (temperature, ambience, and period of individual sub-steps), and by relating them to the resulting sheet resistance and boron doping profile. The results show that under the diffusion conditions in conventional cell production lines, the formed p-emitters can have variable sheet resistance in the range of 35–582 Ω/□ and boron doping depth of 100–300 nm.
研究领域:
材料科学
·
半导体物理
·
光伏技术
·
表面工程
·
纳米材料
·
化学气相沉积
·
微电子学
✓ 已验证
DOI
高影响因子
Solar RRL
·
2022
·Vol. 6
·期 10
·2200398
·
IF 9.173
Lu Pan,Hui Li,Bohong Chang,Longwei Yin
Low bandgap tin–lead halide perovskite (PVSK) presents promising opportunities for high-performance solar cells. However, the randomly crystallized Sn–Pb PVSK with a tin-rich surface is easily oxidized, leading to high-level p-type doping, which hinders the performance enhancement of the solar cell devices. Herein, an efficient anti-solvent passivation strategy to regulate defect, crystallization, and energy conversion performance based on anti-solvents composed of chlorobenzene, isopropanol, and methylammonium chloride (MACl) is proposed. It is shown that the Sn–Pb PVSK film gets more moderate and order, with less PbI 2 and more α-phase PVSK formed. Furthermore, it is revealed that the surface of the as-processed film is Pb-rich, demonstrating a decrease in the surface p-type concentration, which is more suitable for the photoelectric conversion enhancement of the inverting device. Finally, the MACl-assisted post-treated Sn–Pb PVSK invert solar cells exhibit a high current density of 26.49 mA cm −2 with a open-circuit voltage of 0.70 V and a power conversion efficiency of 16.05%. The modified anti-solvent process fuses the advantage of additive and anti-solvent engineering for growing highly crystallized hybrid tin-lead halide PVSK for photovoltaic devices.
研究领域:
材料科学
·
光伏技术
·
太阳能
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Jian Yu,Hongpan Zhu,Zizhen Zhou,Xiaofang Liu,Guang Han,Bin Zhang,Xu Lu,Guoyu Wang,Xiaoyuan Zhou
Mg-based compounds are emerging materials for efficient thermoelectric conversion, as exemplified by n-type Mg 3 Sb 2 -based materials, while a high performing p-type Mg 3 Sb 2 material is lacking. EuMg 2 Sb 2 , a derivative of Mg 3 Sb 2 , has revealed potential as a high-performance alternative to p-type Mg 3 Sb 2 -based materials, while pristine EuMg 2 Sb 2 suffers from low carrier concentration. Herein, we reveal that both Zn substitution for Mg and Yb substitution for Eu not only boost the carrier concentration and mobility of p-type EuMg 2 Sb 2 -based materials, but also sharply diminish the lattice thermal conductivity via enhancing phonon scattering. Band structure calculation shows that Zn substitution minimizes the energy difference between different bands at the valence band maximum and reduces the band effective mass, leading to optimized band structure. Combined with the role of Ag doping in increasing the carrier concentration and power factor, p-type Eu 0.5 Yb 0.5 Mg 1.0975 Zn 0.9975 Ag 0.005 Sb 2 sample obtains a maximal dimensionless figure of merit ( zT ) value of 1.18 at 823 K, which compares favorably to those of EuMg 2 Sb 2 and other p-type Mg–Sb-based Zintl materials. This study demonstrates the efficacy and importance of delicate composition engineering in boosting the thermoelectric performance of p-type EuMg 2 Sb 2 .
研究领域:
材料科学
·
热电学
·
固体物理
✓ 已验证
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2024
·
IF 4.2
Qi Ding,Hairong Li,Weining Liu,Dandan Huang,Xi Tan,Mingyang Zhao,Qionglin Cheng,Ming Yi,Yaqian Ren
Triethylamine (TEA) is easily volatilized and poses a huge health hazard. Therefore, the rapid detection of TEA is of great significance in environmental protection and industrial applications. In this paper, coral flower-like Fe-doped Co 3 O 4 was prepared using Co-MOF-74 as precursor. Compared with the pure Co 3 O 4 , Co 3 O 4 doped with 2 mol% Fe has better gas sensing performance of TEA. At an optimum operating temperature of 199 °C, the response to 100 ppm TEA is 21.2, five times higher than that of the pure Co 3 O 4 , with a short response recovery time (13 s/15 s). In addition, the gas sensor exhibits a certain selectivity and anti-humidity stability, with a minimum detection limit of 1 ppm at operating temperature. The higher Co 2+ /Co 3+ content in the sensor promotes the reaction of TEA with ionized oxygen, and amplifies the resistance change by adjusting the carrier concentration. Meanwhile, the introduction of Fe enriches the content of vacant oxygen and provides sufficient sites for the reaction and diffusion of TEA, further enhancing the sensing performance. In addition, Co 3 O 4 and Fe 2 O 3 combine to form p-n heterojunction , which helps to accelerate the gas adsorption-desorption process and improve the sensitive response speed. It creates a new design idea for the rapid detection of TEA gas by P-type metal-oxide semiconductors at relatively low operating temperatures.
研究领域:
材料科学
·
环境科学
·
化学工程
·
传感器技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）