Laser & Photonics Reviews
·
2026
·
IF 9.7
Ya Wang,Faxin Wang,Haifei Ma,Manning Hu,Yanfei Liu,Jie Cao,Xin Tang,Huicheng Hu
PbSe colloidal quantum dots (CQDs) are promising materials for short-wave infrared (SWIR) imaging, owing to their suitable bandgap, low-cost fabrication, and solution processability. Nevertheless, achieving precise size control together with large size uniformity across a broad infrared spectral range remains a significant challenge, which has consequently limited the development of high-performance PbSe CQD-based infrared photodetectors and imaging systems. In this work, we report a reactivity-engineered synthesis strategy that enables chemical decoupling of nucleation and growth by rationally designing selenium precursors with distinct reactivities. This approach enables the synthesis of size-tunable PbSe CQDs with exceptional size uniformity, yielding particle diameters from 3.26 to 10.14 nm with size deviations below 5%. Leveraging these high-quality materials, we fabricate, for the first time, monolithic PbSe CQD imaging arrays with a resolution of 640 × 512 pixels operating in the extended SWIR region. The resulting imager exhibits a high detectivity of 1.2 × 10 11 Jones at approximately 2000 nm and delivers robust imaging performance at room temperature. These results establish an effective strategy for the synthesis of high-quality PbSe CQDs and highlight their strong potential for high-performance, room-temperature SWIR imaging applications.
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高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
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2020
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IF 6.155
Jinming Hu,Shengyi Yang,Zhenheng Zhang,Hailong Li,Chandrasekar Perumal Veeramalai,Muhammad Sulaman,Muhammad Imran Saleem,Yi Tang,Yurong Jiang,Libin Tang,Bingsuo Zou
Due to their promising applications in foldable displays, optical communication equipment and environmental monitoring systems, flexible and broadband optoelectronic devices have gained extensive attention in recent years. Here, a flexible and broadband photodetector based on CsPbBr 3 /PbSe quantum dot (QD) heterostructures is firstly presented. The integrated QD heterostructures possess consecutive detection range from ultraviolet (UV) to long-wavelength infrared (LW-IR) regions with efficient light absorption and chemical stability, in comparison with the pristine PbSe QDs. Systematic material characterizations reveal the improved exciton dissociation, carrier transport and carrier lifetime of the QD heterostructures. Flexible photodetector Ag/CsPbBr 3 /PbSe/Ag demonstrate a high responsivity of 7.17 A/W with a specific detectivity of 8.97 × 10 12 Jones under 25 μW/cm 2 365 nm illumination at 5 V. Furthermore, it could maintain 91.2 % (or 94.9 %) of its initial performance even after bending for thousands of times (or exposing in ambient air for 4 weeks). More importantly, its response time is shortened more than three orders of magnitude as that of pristine PbSe QDs-based photodetectors. Therefore, it provides a feasible and promising method for the next-generation high-performance broadband photodetectors via constructing heterostructures of various QDs.
研究领域:
材料科学
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光电技术
·
纳米科技
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高影响因子
Journal of Nanomaterials
·
2022
·
IF 3.791
Ziyang He,Huan Liu,Fei Xie,Mingyu Bai,Shuai Wen,Jijie Zhao,Weiguo Liu
By the photodetector manufactured using traditional semiconductor materials, such as HgCdTe and InGaAs, it is difficult to broaden the application range of such photodetectors due to their high cost and complex manufacturing process. PbSe colloidal quantum dots (CQDs) have the potential to shift the working range of photodetector from visible to infrared wavelength region, and it also has high photoresponsivity. Herein, we report the characterization of PbSe CQDs synthesized using a facile solution process, as well as the relationship between the size of nanocrystal and the reaction temperature. The films of PbSe CQDs are deposited using the layer-by-layer (LbL) spin-coating method, which is then used to fabricate the photoconductive device. The fabricated device is found to have an efficient response in a broad spectrum range of 400-2600 nm. The device maintains good responsivity of ~320 mA/W at room temperature. Its external quantum efficiency was quite high in the shorter wavelength infrared region, and it has approximately 14% external quantum efficiency (EQE) at 2520 nm. The device demonstrated excellent performance, confirming that PbSe colloidal quantum dots is a promising material for future broadband spectrum photodetectors.
研究领域:
材料科学
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光电子学
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高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2025
·Vol. 54
·期 8
·6300-6314
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IF 2.5
Wang Longqin,Li Gang,Jiang Yunshan,Ma Haiguo,Deng Shukang,Deng Shuping
Here, we report that a combination of vacuum melting and spark plasma sintering efficiently enhances the thermoelectric properties of the PbTe-PbSe compounds. Thermal analysis results show that all the PbTe 1− x Se x samples have excellent thermal stability. Positron annihilation spectroscopy results indicate improvement of the crystal quality in all obtained PbTe 1− x Se x samples. X-ray photoelectron spectroscopy studies revealed the presence of Pb 2+ , Pb 4+ , Te 2− , Te 4+ , Se 2− states of Pb, Te, and Se. Meanwhile, replacing the isoelectronic cations with those of different electronegativity will lead to a variation in carrier concentration. All samples exhibit p -type conduction with carrier concentrations varying from 0.07 × 10 19 to 7.34 × 10 19 cm −3 , since carrier mobility changes from 4.7 to 727.7 cm 2 V −1 s −1 at room temperature. Therefore, the maximum figure of merit ( ZT ) value reaches 0.6 at 773 K for the PbSe 0.95 Te 0.05 sample benefiting from the greatly reduced thermal conductivity, which is three times more than the intrinsic PbSe. The peak ZT value of 0.70 at 773 K is obtained in PbTe 0.98 Se 0.02 due to the excellent power factor. Valuable insight can be obtained from a quantitative analysis of the thermoelectric transport in PbTe-PbSe compounds with the anion vacancies (Se 2− and Te 2− ). Graphical
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高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Ya Wang,Min Chen,Manning Hu,Anxin Jiao,Faxin Wang,Xiaolong Zheng,Wanqing Li,Xin Tang,Huicheng Hu
Lead selenide (PbSe) colloidal quantum dots (CQDs) are promising candidates for short-wave infrared (SWIR) photodetectors due to their low-cost fabrication and solution processability. However, conventional ligand exchange strategies, such as treatment with 1,2-ethanedithiol (EDT), usually lead to incomplete defect passivation and undesirable doping characteristics. Here, we developed a hybrid-ligand strategy by combining EDT and zinc iodide (ZnI2) to simultaneously passivate surface defects and modulate the doping type of PbSe CQD films. As a result, the photodetector responsivity improves from 0.04 A W−1 to 0.40 A W−1, and the specific detectivity increases from 3.4 × 1010 Jones to 2.8 × 1011 Jones at 500 Hz under zero bias. The optimized device exhibits a wide linear dynamic range exceeding 114 dB and a fast response time of 7.3 μs. Finally, the infrared imaging applications of PbSe CQD photodetectors were successfully demonstrated. This work highlights the importance of synergistic surface passivation and doping modulation in enhancing the performance of CQD photodetectors.
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2025
·
IF 6.3
Mengchun Zhu,Shengyi Yang,Guanzhen Zou,Haiyuan Xin,Zhenhua Ge,Ying Wang,Bingsuo Zou,Yurong Jiang
As a promising material, lead selenide (PbSe) colloidal quantum dots (CQDs) are widely studied for its applications in the next generation photodetectors due to their solution-processability and low cost. However, the (100) surfaces PbSe QDs are usually passivated incompletely by the traditional liquid-phase ligand exchange with the halogen ligands when the diameter of PbSe QDs is larger than 5.0 nm. As compared to the traditional strategies of the halogen ligands, in this work methylammonium acetate (MAAc) was added as an additive into the PbI 2 ligand solution to form the perovskite intermediate (i.e. MAPbI 3-x Ac x ) as the ligand attached onto the (100) face of PbSe, in this way, to enhance the surface passivation and the dispersion of PbSe CQDs. Therefore, the as-synthesized infrared photodetector ITO/ZnO/PbSe-MAPbI 3-x Ac x /Ag showed decreased dark current by more than five-fold, and thus its device performance is enhanced greatly. As a result, a high photoresponsivity of 0.32 mA/W with a specific detectivity of 1.16 × 10 11 Jones was obtained from the photodetector ITO/ZnO/PbSe-MAPbI 3-x Ac x /Ag under 47.8 µW/cm 2 1550 nm illumination. Thus, it provides a supplemental solution to completely surface-passivate CQDs in large size for next generation optoelectronics.
研究领域:
材料科学
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光电技术
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高影响因子
Nanomaterials
·
2022
·Vol. 12
·期 9
·1391
·
IF 5.719
Silu Peng,Haojie Li,Chaoyi Zhang,Jiayue Han,Xingchao Zhang,Hongxi Zhou,Xianchao Liu,Jun Wang
In recent years, lead selenide (PbSe) has gained considerable attention for its potential applications in optoelectronic devices. However, there are still some challenges in realizing mid-infrared detection applications with single PbSe film at room temperature. In this paper, we use a chemical bath deposition method to deposit PbSe thin films by varying deposition time. The effects of the deposition time on the structure, morphology, and optical absorption of the deposited PbSe films were investigated by x-ray diffraction, scanning electron microscopy, and infrared spectrometer. In addition, in order to activate the mid-infrared detection capability of PbSe, we explored its application in infrared photodetection by improving its crystalline quality and photoconductivity and reducing tge noise and high dark current of PbSe thin films through subsequent iodine treatment. The iodine sensitization PbSe film showed superior photoelectric properties compared to the untreated sample, which exhibited the maximum of responsiveness, which is 30.27 A/W at 808 nm, and activated its detection ability in the mid-infrared (5000 nm) by introducing PbI2, increasing the barrier height of the crystallite boundary and carrier lifetimes. This facile synthesis strategy and the sensitization treatment process provide a potential experimental scheme for the simple, rapid, low-cost, and efficient fabrication of large-area infrared PbSe devices.Keywords:chemical bath deposition;PbSe;iodine sensitization;photodetector
研究领域:
材料科学
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光学工程
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电子工程
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PubMed
高影响因子
Materials Today Communications
·
2024
·
IF 3.7
Qian Luo,Runyu Wang,Kai Lu,Hang Liu,Guocai Yuan,Juncheng Ding,Xiaobo Lei,Ruonan Min,Qinyong Zhang,Lihong Huang
PbSe has attracted significant attention as a medium-temperature thermoelectric (TE) material due to its abundance and low cost. This study demonstrate that in the novel thermoelectric system of Al x Pb 0.9975 Sb 0.0025 Se samples ( x = 0, 0.005, 0.01, 0.02, and 0.03), the electronic conductivity of pure PbSe was enhanced by Sb doping. Introducing a small amount of Al to occupy the Pb vacancies not only increases the Hall carrier concentration in PbSe, but also resulting in an increase in Seebeck coefficient ( S ). At 873 K, the power factor ( PF ) of the sample with x = 0.02 increases to 16 μW cm −1 K −2 . In addition, the total thermal conductivity did not increase significantly, so the thermoelectric performance was effectively improved, a maximum figure of merit ( ZT ) of 1.8 is achieved at 873 K, along with a high average ZT ( ZT avg ) of approximately 1 over the temperature range of 300–873 K.
研究领域:
材料科学
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热电学
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能量转换
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Small
·
2022
·Vol. 18
·期 48
·2205356
·
IF 15.153
Mohan Yuan,Huicheng Hu,Ya Wang,Hang Xia,Xingchen Zhang,Binbin Wang,Ziyang He,Mengxuan Yu,Yun Tan,Zhaorong Shi,Kanghua Li,Xuke Yang,Ji Yang,Mingyu Li,Xiao Chen,Liuyong Hu,Xiang Peng,Jungang He,Chao Chen,Xinzheng Lan,Jiang Tang
Lead selenide (PbSe) colloidal quantum dots (CQDs) are promising candidates for optoelectronic applications. To date, PbSe CQDs capped by halide ligands exhibit improved stability and solar cells using these CQDs as active layers have reported a remarkable power conversion efficiency (PCE) up to 10%. However, PbSe CQDs are more prone to oxidation, requiring delicate control over their processability and compromising their applications. Herein, an efficient strategy that addresses this issue by an in situ cation-exchange process is reported. This is achieved by a two-phase ligand exchange process where PbI 2 serves as both a passivating ligand and cation-source inducing transformation of CdSe to PbSe. The defect density and carrier lifetime of PbSe CQD films are improved to 1.05 × 10 16 cm −3 and 12.2 ns, whereas the traditional PbSe CQD films possess 1.9 × 10 16 cm −3 defect density and 10.2 ns carrier lifetime. These improvements are translated into an enhancement of photovoltaic performance of PbSe solar cells, with a PCE of up to 11.6%, ≈10% higher than the previous record. Notably, the approach enables greatly improved stability and a two-month stability is successfully demonstrated. This strategy is expected to promote the fast development of PbSe CQD applications in low-cost and high-performance optoelectronic devices.
研究领域:
材料科学
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光电子学
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DOI
PubMed
高影响因子
Advanced Science
·
2022
·Vol. 9
·期 35
·2203782
·
IF 17.521
Bangzhi Ge,Hyungseok Lee,Lulu Huang,Chongjian Zhou,Zhilei Wei,Bowen Cai,Sung-Pyo Cho,Jing-Feng Li,Guanjun Qiao,Xiaoying Qin,Zhongqi Shi,In Chung
Realizing high average thermoelectric figure of merit (ZT ave ) and power factor (PF ave ) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT ave and PF ave in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb 1+ x Se 0.8 Te 0.2 ( x = 0–0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility ( µ H ) and concentration ( n H ) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity ( σ ). Second, modifying charge scattering mechanism by the authors’ synthesis process boosts a magnitude of Seebeck coefficient ( S ) above theoretical expectations. Detouring the innate inverse proportionality between n H and µ H ; and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PF ave ≈20 µW cm −1 K −2 from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZT ave of ≈1.2 from 400 to 823 K, one of the highest reported for all n-type PbQ (Q = chalcogens) materials.
研究领域:
材料科学
·
物理学
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PubMed
高影响因子
CHEMISTRY OF MATERIALS
·
2018
·
IF 9.89
Linyuan Lian,Yong Xia,Changwang Zhang,Bing Xu,Lei Yang,Huan Liu,Daoli Zhang,Kai Wang,Jianbo Gao,Jianbing Zhang
PbSe quantum dots (QDs) have shown outstanding optoelectronic properties due to their extremely strong quantum confinement. However, the applications of PbSe QDs are substantially limited by their instability in air. Here, we developed a simple synthesis for PbSe QDs via in situ tuning the reactivity of selenium precursor. Because of in situ chloride passivation, the as prepared PbSe QDs showed excellent stability in air, demonstrated by the retention of absorption features and photoluminescence quantum yields (PL QYs) for different sizes after heated at 80 °C in air. Furthermore, the ligand exchanged electronic coupled PbSe QD thin films also had excellent stability in air even for large particle sizes. In addition, the PbSe QDs showed high PL QYs due to hybrid organic (oleate) and inorganic (Cl–) passivation. Monodispersive large (1st exciton peak > 2100 nm) and extremely small (1st exciton peak < 750 nm) PbSe QDs were achieved by careful control of particle growth. As a heating up method, this new synthesis was easily scaled up to produce 23.5 g PbSe QDs from one batch of reaction. The versatility of this new synthetic strategy was demonstrated by the synthesis of other metal selenide QDs such as CdSe and ZnSe QDs.
研究领域:
材料科学
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纳米技术
·
光学
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高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2025
·Vol. 45
·期 15
·117636
·
IF 6.2
Shaoqing Lu,Shengmao Sha,Jian Wang,Lulu Huang,Yu Liu,Jian Yan,Yucheng Wu
PbSe is a promising thermoelectric (TE) material with excellent carrier transport properties and an economic advantage due to the lower cost of selenium compared to tellurium, making it a potential alternative to PbTe. Improving its TE performance through dual-element doping represents a widely employed approach. In this study, the TE properties of n-type PbSe are improved through the simultaneous incorporation of Sn and Cu into the PbSe matrix. By precisely controlling the Pb content, we enable Sn dopants to occupy both interstitial sites and substitutional Pb positions, thereby significantly enhancing electrical conductivity . Meanwhile, interstitial Cu exhibits a temperature-dependent dissolution-precipitation behavior, dynamically turning the carrier concentration and improving electrical transport properties. The dual-doping strategy also introduces abundant point defects , effectively scattering phonons and reducing the lattice thermal conductivity . As a result, the electrical transport properties of the co-doped Pb 0.99 Sn 0.01 Se-0.7 %Cu sample are further improved by Pb regulation, achieving a power factor of 24.2 mW cm⁻¹K⁻² and a peak zT value of 1.80 at 728 K. These results demonstrate the effectiveness of the Sn and Cu co-doping approach in enhancing the TE performance of PbSe, offering promise for the development of cost-effective and high-performance TE materials.
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