Journal of Energy Storage
·
2024
·
IF 8.9
Gang Luo,Ningfang Zhou,Xiaoyong Feng,Ziyi Guo,Chun Wu,Wei Qin
Sb 2 Se 3 is regarded as a promising conversion-alloying type anode material for potassium ion batteries (PIBs) owing to its high theoretical specific capacity. However, the low electric conductivity and large volume change during the charge/discharge process hinder its practical applications. Herein, we proposed a novel ‘dual carbon coating’ strategy to construct carbon confined Sb 2 Se 3 nanorods for high performance PIBs anode. Owing to the enhanced electric conductivity resulted from the inner carbon and the strengthened mechanical stability from the outer graphene layer, the confined Sb 2 Se 3 exhibit outstanding electrochemical potassium ion storage performances with a specific capacity of 482.1 mAh g −1 after 50 cycles at a current density of 0.1 A g −1 . Even at a high current density of 1 A g −1 after 500 cycles, it still maintains a specific capacity of 283.7 mAh g −1 . These results outperform the pure Sb 2 Se 3 and those traditional ‘single carbon’ coated Sb 2 Se 3 from both specific capacity and cycling stability. This ‘dual carbon coating’ method could also be applied to other conversion or alloying type anode materials of PIBs with high theoretical capacities and large volume variation during the repeated charge/discharge process.
研究领域:
材料科学
·
电化学
·
能源存储
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Jiaxing Wen,Yi Pei,Li Liu,Die Su,Min Yang,Qianfu Wang,Wen Zhang,Jing Dai,Yan Feng,Tianjing Wu,Xianyou Wang
Both antimony selenide and antimony are promising anode materials for lithium-ion batteries. However, owing to the influence of the poor electronic conductivity of Sb 2 Se 3 and the large volume expansion of the two materials during the lithiation process, their electrochemical performance is limited and the practical application is restricted. In this work, for the first time, the hierarchical Sb 2 Se 3 and Sb particles fully encapsulated into carbon nanofibers (Sb 2 Se 3 /Sb/C nanofibers) have been in-situ synthesized by electrospinning followed by controlled annealing. Combining the advantages of high specific capacity of Sb 2 Se 3 , good electronic conductivities of Sb and C, and strong stability of C matrix, the Sb 2 Se 3 /Sb/C nanofibers electrode shows excellent lithium-storage performance. It achieves a high reversible capacity (764 mA h g −1 after 300 cycles at 0.1 A g −1 ), splendid ultralong cycling stability (429 mA h g −1 after 1000 cycles at 1 A g −1 ), and high rate capability (342 mA h g −1 at 5 A g −1 ). It demonstrates that Sb 2 Se 3 /Sb/C nanofibers are promising high-performance anode materials for lithium-ion batteries.
研究领域:
材料科学
·
电化学
·
纳米技术
·
能源存储
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Pingping Yu,Xiaotian Yu,Yuqing Kong,Lin Sun,Yanfeng Jiang
Self-powered polarization-sensitive photodetectors play an important role in considerable fields such as navigation, military reconnaissance, and medical imaging. In this paper, a Sb2Se3/PEDOT heterojunction was developed by spraying a PEDOT film to a single Sb2Se3 microbelt (MB) with high crystallinity, synthesized using the CVD process. The self-powered Sb2Se3/PEDOT photodetector (PD) exhibits high polarization-sensitive and broadband detection in the visible–near-infrared range (368–1300 nm). The device achieves a high on/off ratio of 1804, maximum responsivity and specific detectivity of 2.33 A W–1 and 3.84 × 1012 Jones, and fast response time (23 ms/60 ms) at 724 nm under zero bias. The Sb2Se3/PEDOT PD exhibits excellent polarization sensitivity characteristics with the highest anisotropy ratio of 1.7 under 724 nm at zero bias, which is 1.13 times higher compared to the Sb2Se3 PD (1.32) at 0.2 V. The enhanced ability to detect polarized light of the Sb2Se3/PEDOT PD can be attributed to inherent anisotropy of the Sb2Se3 MB and good polarization-sensitivity of PEDOT to form a type II heterojunction, which is suitable for fast separation of photogenerated carriers. Excellent imaging capabilities of the letters “JN” and sensitivity to polarized light at 724 nm have been established for the high-resolution single-pixel image sensor at 0 V bias. This work demonstrates an effective strategy for high-optical response, self-powered, polarization-sensitive photodetection, and imaging using Sb2Se3/PEDOT heterojunctions.
研究领域:
材料科学
·
光子学
·
电子学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2023
·
IF 4.6
Jiang Cheng,Zhen Zhang,Minghao Zhao,Youwei Guan,Xihao Chen,Xiang Meng,Hua Tang,Lu Li,Shenghao Wang
CdS films prepared via chemical bath deposition exhibit extremely good performance as a buffer layer of chalcogenide solar cells. However, their commercial application is very limited because of the production of a large amount of wastewater containing cadmium. In this study, we develop an efficient way to prepare CdS films using the spin-coating technique. The spin solution is anhydrous, and the oxygen content can be well controlled by changing the Cd/S content ratio in the solution. The crystal structure, morphology, and optical and electrical properties of CdS films with different Cd/S content ratios are characterized. The effect of the oxygen content on the device performance is investigated. We find that the introduction of an appropriate amount of oxygen can improve the carrier transport efficiency by decreasing the interface recombination. The spin-coated CdS films have good coverage of the substrate for film thicknesses below 50 nm. By the optimizing of Cd/S content ratio, we achieve an improved efficiency of 5.76% for the Sb 2 Se 3 solar cells. This preparation technique is sufficiently simple for large-scale processing and produces much less wastewater containing cadmium; thus, it is promising for application to future large-scale solar cell production.
研究领域:
材料科学
·
太阳能
·
纳米技术
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Yufei Cheng,Ming Gong,Tete Xu,Enzhou Liu,Jun Fan,Hui Miao,Xiaoyun Hu
Antimony selenide (Sb2Se3) as a light-harvesting material has gradually attracted the attention of researchers in the field of photoelectrocatalysis. Uniquely, the crystal structure consists of one-dimensional (Sb4Se6)n ribbons, with an efficient carrier transport along the ribbon [001] direction. Herein, a novel Sb2Se3@Sb2S3 core–shell nanorod radial–axial hierarchical heterostructure was successfully fabricated by epitaxial growth strategy. Taking advantage of the isomorphous and anisotropic binding modes of (Sb4S(e)6)n ribbons for Sb2Se3 and Sb2S3, the epitaxially grown core–shell heterostructure forms a van der Waals heterojunction across the radial direction and covalently bonded heterojunction along the axial direction. A photocurrent of 1.37 mA cm–2 was achieved at 0 V vs RHE for the hierarchical Sb2Se3@Sb2S3 nanorod photoelectrode with [101] preferred orientation, up to 40 times higher than for pure Sb2Se3. Moreover, the FeOOH was introduced as a cocatalyst. The photoelectrode decorated with FeOOH shows better stability with a H2 generation rate of 18.9 μmol cm–2 h–1 under neutral conditions. This study provides a new insight into the design of antimony chalcogenide heterostructure photoelectrodes for photoelectrochemical water splitting.
研究领域:
光电催化
·
材料科学
·
纳米技术
·
能源材料
✓ 已验证
DOI
高影响因子
Nature Photonics
·
2026
·
IF 38.1
Yang Junjie,Li Jianyu,Sheng Shuwei,Cai Zhiyuan,Li Ke,Ruan Zichen,Che Bo,Tang Rongfeng,Chen Tao
Antimony selenide (Sb 2 Se 3 ) has emerged as a promising thin-film photovoltaic absorber due to its ideal bandgap (1.1–1.3 eV), high absorption coefficient (>10 5 cm −1 ) and environmentally benign composition. However, Sb 2 Se 3 solar cells (SSCs) often suffer from large open-circuit voltage losses owing to the weak built-in fields and severe non-radiative recombination at the interfaces and within the absorber layer. Here we demonstrate a composition-driven strategy for controlling carrier polarity that we used to form an n-type/p-type homojunction within the Sb 2 Se 3 absorber layer. By precisely tuning the chemical potentials of Se and Sb, we are able to manipulate the conductivity type and achieve carrier densities exceeding 10 14 cm −3 for the n- and p-type states. With this materials design, we demonstrate that incorporating the p–n homojunction into a planar SSC simultaneously enhances the built-in electric field and passivates deep-level defects. These synergistic effects promote carrier separation, reduce non-radiative recombination and accelerate carrier extraction. As a result, the internal-homojunction-enhanced SSC delivers a power conversion efficiency of 10.15% for thermally evaporated Sb 2 Se 3 devices and an ultralow open-circuit voltage deficit of 0.459 V. This study proposes a proof-of-concept device structure for SSCs that opens a new pathway for improving device efficiency.
✓ 已验证
DOI
高影响因子
Materials Today Electronics
·
2022
·
IF 0
Kanghua Li,Xuke Yang,Feifan Yang,Jungang He,Guangzu Zhang,Shenglin Jiang,Chao Chen,Jiang Tang
One-dimensional antimony selenide (Sb 2 Se 3 ), enjoying intriguing optoelectronic properties, has drawn extensive attention in solar cells and broadband photodetection. Limited by the bandgap, the reported Sb 2 Se 3 photodetectors always focus on the detection of visible and near-infrared (<1050 nm). Extending the detection waveband can greatly enrich the applications of Sb 2 Se 3 photodetectors. Extrinsic photoconduction is an attractive strategy for extending the detection waveband, for example, the extrinsic Si detector for short-wavelength or long-wavelength infrared detection. However, Sb 2 Se 3 extrinsic photoconduction has not been reported yet. Herein, the extrinsic photoconduction, attributed to the intrinsic point defects, is observed in Sb 2 Se 3 for the first time, which induced a broadened short-wavelength infrared detection of 1650 nm at room temperature. Furthermore, the Sb 2 Se 3 photodetector is fabricated on a flexible polyimide substrate. Meanwhile, the Sb 2 Se 3 photodetectors also demonstrate a fast response speed (rise of 9 µs and fall of 11 µs), a high linear dynamic range of 98 dB, and wide -3dB bandwidth of 163 kHz at 1300 nm. This extrinsic-photoconduction provides feasible design strategies to broaden the detection waveband of the Sb 2 Se 3 photodetectors and can be extended to other chalcogenides.
研究领域:
光电子学
·
红外光电探测
·
柔性电子学
·
材料科学
·
半导体物理
✓ 已验证
DOI
Journal of Physical Chemistry C
·
2019
·
IF 4.309
Wen Wu,Ying Li,Limin Liang,Qiuyan Hao,Jun Zhang,Hui Liu,Caichi Liu
Antimony selenide (Sb2Se3) semiconductor with a narrow band gap is regarded as an ideal candidate for the next-generation broadband photodetectors. However, the photodetectors based on the binary Sb2Se3 semiconductor suffer from low responsivity (Rλ) and external quantum efficiency due to the intrinsic low electrical conductivity. To address the issue, we introduce a low-valence Ni cation (Ni2+) into the binary Sb2Se3 ((Sb1–xNix)2Se3) nanorods synthesized by a facile hot-injection process. With increasing Ni-doping concentration, the (Sb1–xNix)2Se3 nanorods exhibit a significant increase of electrical conductivity from 4.983 × 10–5 to 4.011 × 10–4 Ω–1 m–1. The photodetector based on (Sb0.995Ni0.005)2Se3 nanorod film exhibits an excellent responsivity of 18.9 mA/W under white light illumination of 45 mW/cm2 at an applied bias voltage of 3 V, which is an approximately 19-fold higher than that of the pristine Sb2Se3 nanorod photodetector. Moreover, the density functional theory calculation has demonstrated that the Ni2+ doped into Sb2Se3 will preferentially occupy the Sb site and introduce a shallow energy level of acceptor, resulting in the enhancement of electrical conductivity, which is consistent with the experimental result. Therefore, the work proves the substitution of Sb site with a low-valence metal cation into Sb2Se3 is an effective strategy to improve the performance of the Sb2Se3-based photodetector.
研究领域:
材料科学
·
光电子学
·
半导体物理
·
纳米技术
✓ 已验证
DOI
高影响因子
VACUUM
·
2022
·
IF 4.11
Wen-Wei Lin,Ning-Wei Wang,Ze-Ying Lan,Zhe Fu,Zhi-Ping Huang,Li-Mei Lin,Qing-Ying Ye,Shui-Yuan Chen,Gui-Lin Chen
In this work, we develop a vapor transport deposition (VTD) technology to prepare CdS film with tetragonal phase for the first time, and then construct a CdS/Sb 2 Se 3 planar heterojunction by full VTD tactics. Compared with the CdS synthesized by traditional chemical bath deposition (CBD), the CdS-VTD has superior crystalline, conductivity and lower Urbach energy, which also induces the growth orientation of Sb 2 Se 3 and has a favorable energy level matching structure with Sb 2 Se 3 . With the improved carrier transport efficiency, finally, the built carbon-based Sb 2 Se 3 device delivers an efficiency of 4.91%, obviously improved by 15.8% than Sb 2 Se 3 device with CdS-CBD (4.24%), which is the champion Sb 2 Se 3 device with full VTD process and pave a successive way for the construction of CdS/Sb 2 Se 3 planar heterojunction.
研究领域:
材料科学
·
太阳能电池研究
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2024
·
IF 6.3
Lijun Wang,Deyang Qin,Rui Wang,Shehroz Razzaq,Chunhu Zhao,Pochuan Yang,Xiaobo Hu,Jinchun Jiang,Shaoqiang Chen,Pingxiong Yang,Junhao Chu,Jiahua Tao
Quasi-one-dimensional antimony selenide (Sb 2 Se 3 ) stands out as a promising light-absorbing material known for its non-toxic nature, excellent stability, earth's abundance, and outstanding optoelectronic performance. However, the surface quality of Sb 2 Se 3 thin films is an important factor limiting the efficiency of Sb 2 Se 3 solar cells. This article presents a novel approach employing the environmentally friendly and cost-effective inorganic salt, antimony trichloride (SbCl 3 ), to passivate the surface of Sb 2 Se 3 thin films , thus improving the performance of Sb 2 Se 3 solar cells. The influence of SbCl 3 passivation on the surface quality of Sb 2 Se 3 thin films and the underlying physical mechanisms behind the enhancement of Sb 2 Se 3 solar cell performance have been investigated. SbCl 3 passivation can effectively fill the voids between Sb 2 Se 3 grains , reduce the surface roughness , and decrease the leakage current of the solar cells. Furthermore, it enhances the light response of the device in the long-wavelength region, reduces the open-circuit voltage losses, effectively lowers the interface recombination rate of charge carriers, and improves carrier transport. As a result of this innovative approach, the efficiency of 6.74% has been recorded. This work provides valuable references for future back contact interface passivation of Sb 2 Se 3 solar cells.
研究领域:
材料科学
·
物理化学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2018
·Vol. 6
·期 41
·11078-11085
·
IF 5.976
Shuo Chen,Khurram Shehzad,Xvsheng Qiao,Xue Luo,Xuemei Liu,Yuting Zhang,Xianghua Zhang,Yang Xu,Xianping Fan
Sb2Se3 is a highly interesting narrow band gap semiconductor with promising applications in new-generation electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity, which limits its broader scope of applications. To overcome this challenge, Sn-doped Sb2Se3 ((SnxSb1−x)2Se3) nanorods with enhanced electrical conductivity are firstly synthesized via a facile hot-injection method. With increasing the doping concentration of Sn4+, the (SnxSb1−x)2Se3 nanorods exhibit several orders of magnitude improvement in electrical conductivity, which originates from the increase of carrier concentration. The photodetector based on the (SnxSb1−x)2Se3 nanorod film shows a higher responsivity (6.21 A W−1) and external quantum efficiency (906%), a lower noise equivalent power (3.14 × 10−13 W Hz−1/2), and a fast response time (0.04 s), surpassing the performance of the Sb2Se3 nanorod film photodetector. In addition, the (SnxSb1−x)2Se3 nanorod film photodetector also displays a broadband spectral response ranging from UV to IR. Those excellent performances unambiguously demonstrate that the (SnxSb1−x)2Se3 nanorods are promising for utilization as highly efficient broadband photodetectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
·
2023
·Vol. 25
·期 6
·4617-4623
·
IF 3.3
Shangwei Dong,Guoshuai Li,Jin Hong,Ruijuan Qi,Shuai Yang,Pingxiong Yang,Lin Sun,Fangyu Yue
Quasi-one-dimensional (Q1D) semiconductor antimony selenide (Sb2Se3) shows great potential in the photovoltaic field, but the photoelectric conversion efficiency (PCE) of Sb2Se3-based solar cells has shown no obvious breakthrough during the past several years, of which the intrinsic reasons are pending experimentally. Here, we prepare high-quality Q1D Sb2Se3 thin films via the vapor transport deposition technique. By investigating the bandedge electronic level structure and carrier relaxation/recombination dynamics, we find that (i) the optimized Se-rich growth conditions can highly improve the crystal quality of the Q1D Sb2Se3 thin films, the carrier lifetime of which is substantially increased up to ∼8.3 μs; (ii) the Se-rich growth conditions have advantages to annihilate the deep selenium vacancies VSei (i = 1 and 3 for non-equivalent Se atomic sites) but is not effective for the deep donor VSe2, which locates at ∼0.3 eV (300 K) below the conduction band and intrinsically limits the PCE value of devices below ∼7.63%. This work suggests that further optimizing the Se-rich conditions to technically eliminate this kind of deep defect is still essential for preparing high-performance Sb2Se3 film solar cells.
研究领域:
光伏技术
·
半导体材料
·
缺陷物理
·
薄膜技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）