SENSORS AND ACTUATORS B-CHEMICAL
·
2026
·
IF 8.3
Baoyu Huang,Haochen Zhang,Zhipeng Guan,Shupeng Sun,Yuwei Shan,Wencheng Ma,Nan Wang,Lingchu Huang,Xiaogan Li
NO 2 is an important component of air pollution and can have a significant impact on the environment and human respiratory health. Therefore, the requirement for real-time detection of low-concentration NO 2 from various emission sources drives the development of a specialized gas sensor. In this work, a heterojunction material based on bulk SnTe and In 2 S 3 nanosheets was developed, which can reach the ppb-level detection of NO 2 at room temperature. The sensor based on SnTe/In 2 S 3 exhibits better response (5.56) and a faster response time (58 s) for 1 ppm of NO 2 compared to the original SnTe-based sensor with the response of 1.11 and the response time of 204 s and reaches the detection limit of 75 ppb. The heterojunction sensor exhibits not only enhanced response and low detection limit but also performs improved selectivity, repeatability and long-term stability. The comprehensive performance enhancements result from both the promoted charge transfer due to the SnTe/In 2 S 3 heterojunction and abundant surface-adsorbed oxygen. The sensing mechanisms were studied through the use of in-situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and electrochemical impedance spectroscopy.
✓ 已验证
DOI
高影响因子
ACS Applied Energy Materials
·
2021
·
IF 6.024
Zhongwei Zhang,Wenjing Xu,Chengyan Liu,Fucong Li,Hengquan Yang,Xiaoyang Wang,Jie Gao,Chen Chen,Qian Zhang,Jing Liu,Xiaobo Bai,Ying Peng,Lei Miao
As a potential thermoelectric (TE) candidate with a rock salt structure similar to PbTe, SnTe has attracted much attention in recent years. However, a high carrier concentration caused by its inherent Sn vacancy severely lowers the TE performance. In this study, it is found that the introduction of Br on the basis of Se doping not only manipulates the carrier concentration but also reduces the solubility of SnSe in SnTe to form SnSe nanoprecipitates with suitable sizes (<10 nm) to scatter phonons. Thereby, the power factor is improved (∼1943 μW m–1 K–2) and the thermal conductivity is reduced (∼2.13 W m–1 K–1), pushing the zT value up to ∼0.75 (Sn1.03Se0.12Te0.870Br0.010) at 823 K. This study combines the carrier and chemical solubility engineering by halogen doping and provides an approach to improve the TE performance of materials with similar structures.
研究领域:
材料科学
·
热电学
·
半导体物理
·
纳米材料
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Zheng Ma,Jingdan Lei,De Zhang,Chao Wang,Jianli Wang,Zhenxiang Cheng,Yuanxu Wang
SnTe has attracted more and more attention due to the similar band and crystal structure with high performance thermoelectric materials PbTe. Here, we introduced Pd into SnTe and the valence band convergence was confirmed by first-principles calculation. In the experimental process, we found that Pd-doped SnTe exhibit a reduced thermal conductivity because of softening chemical bonds and grain refining effects. To further improve the thermoelectric performance, Pd–In codoped SnTe samples were prepared, and the abnormal change of thermal conductivity was observed. The results of synchrotron powder diffraction suggest that the local phase transition (local structural distortions) near 400 K results in the first turn on thermal conductivity. Similarly, the second local phase transition in near 600 K observed by neutron powder diffraction lead to a decrease thermal conductivity of the sample. Finally, a peak thermoelectric figure of merit (ZT) ≈ 1.51 has been obtained in Sn0.98Pd0.025In0.025Te at 800 K.
研究领域:
材料科学
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热电学
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固态物理
·
晶体学
✓ 已验证
DOI
高影响因子
ACS Applied Energy Materials
·
2019
·
IF 0
Zheng Ma,Chao Wang,Jingdan Lei,De Zhang,Yanqun Chen,Jianli Wang,Zhenxiang Cheng,Yuanxu Wang
The introduction of special alloy nanoparticles and elemental elements in the matrix can synergistically optimize the thermoelectric properties of SnTe. Here, MgAgSb alloy nanoparticles and 0.5 mol % In are co-doped into SnTe to optimize electrical and thermal properties, which finally make the thermoelectric performance greatly improved. The improvement of Seebeck coefficient results from the valence band convergence because of the presence of Ag, Mg, and Sb atoms and a resonant state generated by doping In element. In addition, the carrier mobility is enhanced owing to the decrease of Sn vacancies caused by the doping. A high power factor (17.67 μW cm–1 K–2) can be obtained in Sn1.025In0.005Te-3%MgAgSb sample at 835 K. Doping multielement alloy could also effectively improve the thermal properties by scattering phonons in each frequency band, which cannot be realized merely by doping single element. This strong phonon scattering is derived from point defects and particles produced by doping MgAgSb. Extremely low thermal conductivity is achieved with the value of 1.046 W m–1 K–1 at 835 K. Finally, we acquire a high ZT of 1.41 at 835 K in Sn1.025In0.005Te-3%MgAgSb.
研究领域:
材料科学
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热电学
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纳米材料
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能量转换
✓ 已验证
DOI
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Panpan Peng,Chao Wang,Shengqiang Cui,Chunhui Wang,Jing Chen,Min Hao,Xudong Huang,Xinxin Wang,Yajing Wang,Zhenxiang Cheng,Jianli Wang
The manipulation of defect chemistry is crucial in the design of high-performance thermoelectric materials. Studies have demonstrated that alloying compounds within the I–V–VI2 family, such as AgSbTe2, NaSbTe2, etc., can effectively enhance the thermoelectric performance of SnTe by controlling the hole concentration and reducing the lattice thermal conductivity. In this paper, samples of SnTe alloyed with MnSb2Se4 were prepared, and the microstructure, electrical properties, and thermal properties were thoroughly investigated. Based on SEM and TEM analysis, it was observed that MnSb2Se4 can dissolve into SnTe during the preparation of the samples, which leads to the formation of various secondary phases with different compositions and point defects. Consequently, the lattice thermal conductivity is reduced to 0.44 W m–1 K–1 at 800 K, approaching the amorphous limit. Furthermore, the diffusion of the Mn and Sb elements leads to a significant improvement in the Seebeck coefficient through valence band convergence. The vacancy concentration in SnTe can also be modulated by alloying with MnSb2Se4. The findings indicated that MnSb2Se4 alloying can enhance the thermoelectric performance of SnTe through increasing the vacancy concentration, promoting valence band convergence, and introducing secondary phases. Consequently, a ZT value of 1.36 at 800 K for Sn1.03Te-5%MnSb2Se4 can be achieved.
研究领域:
材料科学
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热电学
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缺陷化学
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纳米材料
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能量转换
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Yu Fang,Zheng Tang Cai,Ze Wei Zhu,Jia Hao Ma,Hong Kai Cai,Han Li
SnTe has attracted significant attention as a promising thermoelectric material due to its favorable band structure and low cost. However, its high intrinsic hole concentration and thermal conductivity still hinder further performance enhancement. In this study, a series of Sn 2.9-x W x Te 2.9 –(In 2 Te 3 ) 0.03 –(Cu 2 Te) 0.18 (x = 0, 0.03, 0.06, 0.09, 0.12, 0.15) composites were synthesized by incorporating in-situ formed In 2 Te 3 and Cu 2 Te nanophases along with W doping. Structural and microstructural analyses confirmed the formation of uniformly distributed nanoinclusions (10–20 nm) and homogeneous elemental distribution. W doping effectively suppressed intrinsic Sn vacancies and induced valence band convergence, while the introduction of In created resonant states. These synergistic effects significantly enhanced the Seebeck coefficient. Moreover, multiscale phonon scattering arising from nanophases, dislocations, and lattice distortions greatly reduced the lattice thermal conductivity. The sample with x = 0.09 exhibited a maximum power factor of 25.98 μW·cm −1 ·K −2 , while the sample with x = 0.12 achieved a minimum lattice thermal conductivity of 0.406 W·m −1 ·K −1 . As a result, the optimized composition reached a peak ZT of 1.23 and an average ZT of 0.44 at 823 K, representing improvements of approximately 209 % and 215 % over pristine SnTe, respectively. These results place the material among the top-performing SnTe-based thermoelectric systems reported to date.
研究领域:
材料科学
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热电材料
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纳米材料
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能量转换
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2022
·
IF 16.744
Yichen Du,Zuyue Yi,Zhuangzhuang Zhang,Jiaying Liao,Yifan Xu,Jianchun Bao,Xiaosi Zhou
Metal telluride is a highly promising anode for alkali-metal ion batteries on account of its high theoretical capacity, distinctive layered structure, and good conductivity. Nonetheless, its application in potassium-ion batteries (PIBs) is restricted by serious structure damage of electrode and sluggish faradic reaction in kinetics stemmed from the intrinsic large ion radius. Herein, a lamellar nanostructure of multilayer graphene sheets embedded with SnTe nanoparticles (SnTe/MGS) is engineered. During the synthesis process, fine monodisperse SnTe nanoparticles and multilayer graphene sheets form a porous network framework together, which effectively buffers the electrode against the pulverization caused by the repeated insertion/extraction of large-sized K + and provides a wealth of pseudocapacitance storage sites and electronic transmission channels at the meantime. Particularly, both SnTe and MGS possess a layered structure, thus affording more reaction sites for the diffusion behavior. When employed as an anode for PIBs, SnTe/MGS also delivers a high initial reversible capacity of 345.7 mA h g −1 at 0.1 A g −1 , prominent long-term stability of 279.4 mA h g −1 at 0.5 A g −1 after 1000 cycles, and desired rate performance of 180.1 mA h g −1 at 2.0 A g −1 .
研究领域:
材料科学
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电化学
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能源存储
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纳米材料
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电池技术
✓ 已验证
DOI
高影响因子
ACS Applied Energy Materials
·
2025
·
IF 5.5
Chao Wu,Xin Miao,Aojie Zhang,Mingxing Guo,Jianxiang Lin,Anjun Jin,Wenhao Fan,Shaoping Chen
Despite the excellent thermoelectric properties of Te, the element diffusion and reaction at the interface with the metal electrodes introduce a large contact resistivity (ρc), significantly reducing the conversion efficiency (η) of the device. Therefore, suitable barrier layers are being sought to optimize the connection between Te and metal electrodes. In this study, a Sn–Te alloy barrier layer is reported based on interfacial reaction. The results indicate that there is no reaction layer or microscopic defects at the interface of the SnTe/Te0.985Sb0.015 device. Additionally, the η of the single-leg device is approximately 4.7% at a temperature difference of 230 K. Notably, this ηmax is 100% higher than that of the Ni/Te0.985Sb0.015/Ni device. Meanwhile, the interface exhibits good thermal stability, with no significant changes observed in ρc, η, and interface microstructure after aging at 523 K for 18 days. This work provides valuable insights into optimizing the interface between thermoelectric materials and metal electrodes, which could lead to the development of more efficient and stable thermoelectric devices.
研究领域:
材料科学
·
热电学
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能量转换
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
Nano Energy
·
2018
·
IF 13.12
Zhiwei Zhou,Junyou Yang,Qinghui Jiang,Xuesong Lin,Jiwu Xin,Abdul Basit,Jingdi Hou,Bingyang Sun
In this work, the co-doping in both the anion and cation sites of SnTe has been implemented by addition of BiCl 3 and the effect of co-doping on thermoelectric performance of SnTe-based materials has been studied detailedly. Benefitting from the sharp reduction of carrier concentration and the increase of density of states due to the electron donor contribution of Bi and Cl, the electrical transport properties have been improved greatly; moreover, the hierarchical architectures such as the point defects , dislocations, nano-particles and phase/grain boundaries act as multiscale phonon scattering centers and effectively suppress the transport of phonons in wide frequency range, thus reduced the thermal conductivity dramatically. Due to the synergistic regulation of cation-anion co-doping, a maximum ZT of ~1.27 at 873 K has been obtained in the sample of SnTe doping with 4% BiCl 3 , which enhances by 182% in comparison with the pristine sample.
研究领域:
材料科学
·
热电材料
✓ 已验证
产品关联
DOI
高影响因子
Journal of Advanced Ceramics
·
2021
·Vol. 10
·期 4
·860-870
·
IF 6.707
Xu Wenjing,Zhang Zhongwei,Liu Chengyan,Gao Jie,Ye Zhenyuan,Chen Chunguang,Peng Ying,Bai Xiaobo,Miao Lei
Eco-friendly SnTe based thermoelectric materials are intensively studied recently as candidates to replace PbTe; yet the thermoelectric performance of SnTe is suppressed by its intrinsically high carrier concentration and high thermal conductivity. In this work, we confirm that the Ag and La co-doping can be applied to simultaneously enhance the power factor and reduce the thermal conductivity, contributing to a final promotion of figure of merit. On one hand, the carrier concentration and band offset between valence bands are concurrently reduced, promoting the power factor to a highest value of ∼2436 µW·m −1 ·K −2 at 873 K. On the other hand, lots of dislocations (∼3.16×10 7 mm −2 ) associated with impurity precipitates are generated, resulting in the decline of thermal conductivity to a minimum value of 1.87 W·m −1 ·K −1 at 873 K. As a result, a substantial thermoelectric performance enhancement up to zT ≈ 1.0 at 873 K is obtained for the sample Sn 0.94 Ag 0.09 La 0.05 Te, which is twice that of the pristine SnTe ( zT ≈ 0.49 at 873 K). This strategy of synergistic manipulation of electronic band and microstructures via introducing rare earth elements could be applied to other systems to improve thermoelectric performance.
研究领域:
材料科学
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热电学
·
半导体物理
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能量转换材料
✓ 已验证
DOI
高影响因子
ACS Applied Energy Materials
·
2026
·
IF 5.5
Zhongshuo Li,Tingting Zhang,Zhangheng Lai,Yutao Mo,Zhengmao Luo,Ning Qi,Zhiquan Chen
SnTe is widely recognized as a promising alternative to environmentally harmful PbTe for thermoelectric applications at moderate and high temperatures. Nevertheless, due to the ultrahigh hole concentration as well as lattice thermal conductivity, the thermoelectric performance of pure SnTe is greatly constrained. In our work, a novel strategy was put forward to optimize the relatively poor thermoelectric performance of SnTe by simultaneously incorporating In2Se3 and Cd. The Seebeck coefficient was apparently improved through the whole temperature range originating from the introduction of resonant energy levels achieved by In doping, while lattice thermal conductivity was decreased to a relatively low level of ∼0.49 W m–1 K–1 at 873 K, owing to a decrease in sound velocity and strong scattering on phonon caused by nanopores and dislocations after doping. Profiting from the synergistic optimization thermoelectric performance strategies, a peak zT of 1.32 at 873 K was achieved in Sn0.96Cd0.04Te+1%In2Se3, which represents a remarkable 89% increase over pristine SnTe. And an average zT of 0.66 from 303 to 873 K was also obtained. Our work provides a new strategy for multifunctional synergistic modulation of the thermoelectric properties of SnTe-based materials.
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2019
·Vol. 12
·期 3
·1904-1911
·
IF 6.97
Zheng Ma,Chao Wang,Jingdan Lei,De Zhang,Yanqun Chen,Yuanxu Wang,Jianli Wang,Zhenxiang Cheng
Using dispersed nanostructures to induce an energy filtering effect is an easy and effective mechanism to optimize the performance of bulk thermoelectric materials. Compared with other nanostructures, core–shell nanostructures possess more interfaces and multiple potential barriers, which would lead to a significant impact on the thermal and electrical properties of materials. In this paper, after BiCuSeO alloy doping into SnTe, SnO2 layers were formed at the interfaces and the BiCuSeO nanoparticles were wrapped in the SnO2 shell during the following high temperature solid state reaction. The formation of SnO2 layers could be observed and confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). BiCuSeO@SnO2 core–shell nanostructures can introduce multiple potential barriers to enhance the energy filtering effect. Once the BiCuSeO doping concentration was over 3%, the carrier concentration could decrease to about 10% while the mobility increases to 350% compared to the values of the undoped sample at room temperature. Meanwhile, the Seebeck coefficients were improved to 176.05 μV K−1 at 835 K. Additionally, due to the scattering of core–shell nanostructures for the phonons, a lower thermal conductivity is achieved with a value of 1.04 W m−1 K−1 at 835 K in Sn1.03Te-5% BiCuSeO. Combined with the improvement of thermal and electrical properties by the BiCuSeO@SnO2 core–shell, a high ZT value of ∼1.21 was achieved for Sn1.03Te-5% BiCuSeO at 835 K, which was enhanced by 190% compared to pristine SnTe.
研究领域:
材料科学
·
热电学
·
纳米材料
·
固态化学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）