ACS Nano
·
2025
·
IF 16
Feng Li,Xin Zhang,Kaixin Zhang,Maosheng Gong,Zezhou Lin,Peiyu Hou,Jingyuan Liu,Haijing Liu,Hongzhou Zhang,Xijin Xu,Haitao Huang
The synergistic effects of a single-crystal structure and high-entropy doping are expected to enhance the structural and thermal stability of high-capacity Ni-rich cathodes. Nonetheless, the pinning effect caused by heavy-mass dopants and surface phase segregation induced by the thermodynamic immiscibility of dissimilar elements hinder atomic diffusion and crystal fusion, making it extremely difficult to synthesize single crystals with high-entropy doping. In this study, density functional theory calculations confirm that effective diffusion is achievable within a grain-boundary-free single-crystal matrix at elevated temperatures, even for heavy-mass dopants with high valence states. A lattice-matched epitaxial growth approach is proposed to enable the synthesis of single-crystal Ni-rich oxides with high-entropy doping. The synergistic effects of high-entropy doping and single crystals within a Ni-rich cathode exhibit significantly reduced changes in the lattice volume and Ni–O/TM coordination distance and the absence of intragranular cracks upon Li+ de/intercalation, presenting highly improved cyclic and thermal stabilities compared with the high-entropy-doped polycrystal counterpart and single-crystal counterpart without high-entropy doping. This integration not only addresses the inherent limitations of Ni-rich compositions but can also be expanded to the design of other electrode materials, where entropy-driven stabilization and single crystals can work together to enhance cathode performance.
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高影响因子
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
·
2015
·Vol. 17
·期 10
·6819-6826
·
IF 4.493
Yanting Liu,Jun Zhou,Binbing Wang,Tao Jiang,Ho-Pui Ho,Lucia Petti,Pasquale Mormile
Novel Au@Ag core–shell nanocubes (NCs) were successfully prepared by the controlled epitaxial growth of Ag shells onto Au nanoellipsoids (NEs) in the presence of surfactants. The growth mechanism of the Au@Ag core–shell NCs was systematically investigated by analyzing their morphology, optical properties, and crystallography. The localized surface plasmon resonance (LSPR) characteristics and the electric field distribution of the Au@Ag core–shell NCs were studied using the finite element method (FEM) based on the plasmon hybridization theory. Compared with pure Ag NCs, the absorption spectrum of the Au@Ag core–shell NCs exhibits a red shift and a weak shoulder near 550 nm, and the notable enhancement of electric field occurs around the corners along the long-axis of the Au ellipsoidal core because of plasmonic resonant coupling. Surface-enhanced Raman scattering (SERS) of the Au@Ag core–shell NCs labeled with 4-mercaptobenzoic acid molecules reveals that the bimetallic core–shell NCs possess efficient SERS activity with an enhancement factor EF = 2.27 × 106, thus confirming the possibility of using the Au@Ag core–shell NCs as a stable probe for SERS-based biosensing applications.
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Frontiers in Physics
·
2021
·
IF 3.56
Zhao Jingda,Wang Xin,Pan Yuzhu,Xu Yubing,Li Yuwei,Chen Jing,Wu Jun,Li Qing,Zhao Zhiwei,Zhang Xiaobing,Akram Javed,Bae Byung Seong,Yang Haining,Lei Wei
Organic-inorganic hybrid methylammonium lead halide perovskite MAPbX3 (where MA = CH3NH3, and X = Cl, Br, I) single crystals are potential semiconductors for photo-detection due to their excellent optoelectronic performance. In particular, MAPbCl3 single crystal is a wide-band-gap (2.9 eV) semiconductor which is suitable for ultraviolet (UV) detection. In this work, n−-n+ photo-diodes are fabricated through solution-processed epitaxial growth, growing Bi-doped MAPbCl3 epitaxial layer on MAPbCl3 single crystal substrate. The epitaxial layer effectively improves the interface between n−-type and n+-type layers and leads to low dark current. This work provides useful information for UV detection based on perovskites.
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INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
·
2019
·
IF 3.375
Huiyong Chen,Wenjin Shang,Chenbiao Yang,Baoyu Liu,Chengyi Dai,Jianbo Zhang,Qingqing Hao,Ming Sun,Xiaoxun Ma
The hierarchical layered-bulky ZSM-5 (LBZ5) hybrid composites with a core–shell structure were synthesized by epitaxial growth of layered ZSM-5 nanosheets over bulky ZSM-5 crystals. The systematic balance of zeolitic microporosity and interlayered mesoporosity was achieved by elaborate regulation of the ratio between layered phase and bulky phase, resulting in a series of layered-bulky ZSM-5 hybrid composites with the controllable thickness of the layered shell ranging from 98 to 307 nm. The evaluation of catalytic performance in the methanol-to-propylene (MTP) reaction indicated the LBZ5 materials to be candidated catalysts for the MTP process with prolonged catalytic lifetime, superior coke toleration, and enhanced propylene selectivity compared with the parent bulky ZSM-5 (BZ5) and layered ZSM-5 (LZ5) due to their well-retained zeolitic framework, hierarchical meso-/microporosity by the layered-bulky composite structure, and appropriate strong acidity.
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Journal of Materials Chemistry C
·
2024
·
IF 5.7
Dan Zhang,Yuzhu Pan,Xin Wang,Ziyu Wei,Yubing Xu,Damian Chinedu Onwudiwe,Byung Seong Bae,Mehmet Ertuğrul,Jianming Zhou,Xiaobao Xu,Wei Lei
Dual-band photodetectors (PDs), which can sense two specific bands simultaneously or alternately, have great applications in spectral analysis, imaging, optical communication, and so on. However, some studies on dual-band PDs are mostly limited by drawbacks such as high cost, fixed dual-band range, and lattice mismatches between interfaces. Herein, we propose organic–inorganic halide perovskite single crystal heterojunctions (PSCHs) for dual-band detection via solution-processed epitaxial growth, with a structure of bismuth doped MAPbCl3/intrinsic MAPbBrxCl3−x/bismuth doped MAPbIyBr3−y/intrinsic MAPbIzBr3−z (where x, y, and z are between 0 and 1). The peak position and the full-width at half maximum (FWHM) value of dual-band PDs can be adjusted by changing the proportion of halide in the perovskite single crystal layers in the device, achieving different dual-band spectral response ranges. Eventually, a device exhibits two farthest peaks at 465 nm and 820 nm of visible (Vis)/near-infrared (NIR) range with the corresponding FWHM values of 22.6 nm and 19.4 nm under 2 V. The PSCH-based device can be called dual narrowband PD exhibiting good stability and a response speed of hundreds of microseconds, attributed to the small lattice mismatch and heterostructure. It also shows a high spectral rejection ratio (∼360). In conclusion, this article proposes an approach for customizing dual narrowband PDs with tunable spectral response ranges based on solution-processed epitaxial growth.
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CRYSTAL GROWTH & DESIGN
·
2024
·
IF 3.2
Liguo Gao,Ke Zeng,Ye Jia,Lingxue Kong,Anmin Liu,Tingli Ma,Junjiang Bao
The epitaxial growth of heterojunctions can reduce interface defects and enhance the stability of the crystal structures. However, a higher lattice mismatch can cause local lattice distortions at the interface, resulting in relaxed strains that eventually evolve into structural defects. Herein, a nearly zero-mismatch semicoherent interface was formed with a lattice mismatch (0.3%) by epitaxial growth CsPbBr3 on CdS quantum dots (QDs), leading to a strain-free semicoherent interface. Results demonstrated that CdS/CsPbBr3 heteronanocrystals (HNCs) had excellent stability and high photocatalytic performance compared with CsPbBr3. Theoretical calculations show that the Br–Cd bond forms strong electron coupling, which not only facilitates rapid electron transfer but also provides better structural stability. Compared to the individual CsPbBr3 nanocrystals (NCs), the CdS/CsPbBr3 HNCs exhibited higher stability and 2.1 times higher photocatalytic activity. It suggests that CdS/CsPbBr3 HNCs have potential application value in energy and environmental fields.
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JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2025
·
IF 9.7
Liying Wen,Xinyu Zhao,Zhiwang Sun,Lin Han,Jinnong Wang,Ruihong Zhang,Xin Li,Fangfang Cheng,Neng Li,Yuanhao Wang,Shifeng Wang
Two-dimensional transition metal dichalcogenides (TMDs) have garnered significant attention in optoelectronic due to their unique structural and electronic properties. Among them, SnSe 2 and SnS 2 offer advantages of abundant reserves, low price and facile processing. In this work, we successfully synthesized SnSe 2 -SnS 2 nanosheets with an interesting lateral heterostructure via van der Waals edge epitaxial growth using a hydrothermal method. Density Functional Theory (DFT) calculations of surface energy and interfacial adhesion work revealed that the stronger covalent bonding between their (100) planes is the key thermodynamic factor governing the preferred lateral growth mode, despite their comparable lattice mismatch. The synergistic effect between the lateral heterojunction and the S-scheme interface with Se/S vacancies establishes a robust built-in electric field, which drastically promotes the excitation, separation, and migration of photogenerated charges, thereby significantly enhancing the photocatalytic activity. Evaluation of the photocatalytic performance demonstrated that the heterostructure degrades methyl orange (MO) at a rate 7.9 and 3.8 times faster than pure SnSe 2 and SnS 2 , respectively, and maintains over 70% of its initial activity after six consecutive cycles. This work provides mechanistic insights into the lateral growth mode of 2D materials and, through the synergistic design of band alignment and interface engineering, offers a novel paradigm for developing highly efficient and stable photocatalysts.
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CRYSTENGCOMM
·
2015
·Vol. 17
·期 45
·8697-8702
·
IF 4.034
Xiaolin Wu,Jiang-Long Wang,Hongrui Zhang,Shufang Wang,Shengjun Zhai,Yaguang Li,Dogheche Elhadj,Guangsheng Fu
c-axis oriented Bi1−xPbxCuSeO (0 ≤ x ≤ 0.8) single crystalline thin films have been successfully epitaxially grown on SrTiO3 (001) substrates via the pulsed laser deposition technique. Detailed X-ray diffraction and transmission electron microscopy measurements reveal the excellent c-axis and ab-plane texture of the films. As the Pb doping concentration increases, both the resistivity and the Seebeck coefficient decrease due to the increase in hole carrier concentration. The highest power factor of about 1.2 mW m−1 K−2 has been achieved in Bi0.96Pb0.06CuSeO single crystalline thin films at 673 K, which is much higher than those of polycrystalline ceramics with random orientation, suggesting that c-axis oriented BiCuSeO-based single crystalline thin films might have great potential for application in thermoelectric thin film devices.
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Nanoscale
·
2018
·Vol. 10
·期 6
·2812-2819
·
IF 7.233
Shuguang Wang,Xixi Ji,Yu Ao,Jie Yu
Three-dimensional ordering of two-dimensional nanomaterials has long been a challenge. Simultaneously, diamond nanomaterials are difficult to synthesize due to the harsh synthesizing conditions required. Here, we report substrate-crystal-orientation dependent growth of diamond nanosheets (DNSs) by chemical vapor deposition, which generates different DNS arrays on different substrates. The DNSs are grown by the in-plane epitaxy of the diamond {111} planes. So the arrays are highly ordered and solely determined by the spatial orientation of the {111} planes in the diamond FCC structure. The DNSs grown on the {110}, {111}, {001}, and {113} oriented substrates show inclination angles ranging from 90 to 29.5°. The DNSs with larger inclination angles grow preferentially, forming parallelogram arrays with inclination angles of 90° on the {110} substrates and parallel-line arrays with inclination angles of 80° on the {113} substrates. The density, thickness, size, and morphology of the DNSs have been well controlled. The present understanding and materials are highly promising for many applications such as sensors, catalysis, photonics, thermal management, and electronics.
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ACS Applied Electronic Materials
·
2021
·
IF 3.314
Beilei Yuan,Haoming Wei,Jingwei Li,Yu Zhou,Fan Xu,Jinkai Li,Bingqiang Cao
In this paper, inorganic halide perovskite cesium lead bromide (CsPbBr3) films are epitaxially grown on (100)-oriented SrTiO3 substrates by pulsed laser deposition (PLD). This method has the distinctive advantages to grow high-quality films with a precise composition, designed crystalline orientation, and controlled uniform thickness. By optimizing the substrate temperatures and laser pulse numbers, (100)-CsPbBr3 films with uniform morphology are grown on a SrTiO3 substrate via a cubic-on-cubic epitaxial growth mode, which is proven by XRD investigation. Detailed photophysical spectroscopy study including femtosecond transient absorption spectra and detailed low-temperature photoluminescence spectra indicate that such epitaxial CsPbBr3 films are of very low defects in the bandgap. The temperature-dependent resistivity measurement reveals that the epitaxial CsPbBr3 films show a typical thermally activated carrier behavior with a bandgap value of 2.37 eV, which is very consistent with the optical result and indicates a quasi-intrinsic semiconductor nature of such an epitaxial film. Our results confirm that CsPbBr3 films with high crystal quality and lower defect density can be epitaxially grown with PLD for further superlattices and quantum wells.
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ADVANCED MATERIALS
·
2017
·Vol. 29
·期 32
·1700439
·
IF 19.791
Lei Fu,Feng Wang,Bin Wu,Nian Wu,Wei Huang,Hanlin Wang,Chuanhong Jin,Lin Zhuang,Jun He,Lei Fu,Yunqi Liu
As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS 2 ) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS 2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS 2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS 2 back-gate field-effect transistors display a competitive mobility of 7.6 cm 2 V −1 s −1 and an ultrahigh on/off ratio exceeding 10 8 . Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS 2 crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 10 5 A W −1 , which is 10 9 -fold higher than 9 × 10 −5 A W −1 obtained from the multilayer MoS 2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 10 5 and an ultrahigh detectivity exceeding 4.01 × 10 12 Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications.
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ACS Applied Electronic Materials
·
2024
·
IF 4.3
Guozhang Dai,Yangyang Liu,Yang Xiang,Ziyi Yang,Ying Wang,Yuguang Luo,Tengxiao Xiongsong,Jidong Zhang,Junliang Yang
Group II–VI semiconductor CdTe is widely used in optoelectronic devices because of its high absorption coefficient and good chemical stability. High-quality CdTe thin films serve as the foundation for high-performance optoelectronic devices. In this work, centimeter-scale CdTe thin films were synthesized via van der Waals heteroepitaxy on mica substrates using vapor phase transport (VTD), and planar structure photodetectors (PDs) were constructed via depositing the Au electrodes on the surface directly or exfoliated buried interface. The results show that the performance of PDs constructed using a CdTe buried interface is much better than those constructed using a CdTe surface under the light irradiation at the wavelengths of 406, 642, and 808 nm, and the switching ratio can reach up to 2 × 104, with a response of 4.4 A/W and a short response time of 1.5 ms. The smooth interface morphology and a large area of flat and dense surfaces are conducive to carrier transport, showing better performance. Furthermore, flexible PDs are constructed via transferring CdTe thin films onto a poly(ethylene terephthalate) (PET) substrate and exhibit excellent flexibility and stability, which can maintain 96.5% original performance with more than 200 times bending at a curvature radius of 5 mm. The research indicates that the high-quality, centimeter-scale CdTe with buried interface fabricated via van der Waals epitaxial growth is a promising potential candidate in high-performance optoelectronic devices.
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