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PHYSICAL CHEMISTRY CHEMICAL PHYSICS · 2023 ·Vol. 25 ·期 22 ·15452-15462 · IF 3.3

Understanding the broadband near-infrared luminescence in a highly distorted garnet Ca4HfGe3O12:Cr3+ phosphor

Zurong Liao,Jiyou Zhong,Chaojie Li,Huan Jiang,Weiren Zhao

Broadband near-infrared (NIR) spectroscopy generated from a phosphor-converted light-emitting diode (pc-LED) has multifunctional applications, including food-quality analysis, bio-medical and night-vision, stimulating the demand for developing various NIR phosphors with desired properties. Herein, we selected a highly distorted garnet Ca4HfGe3O12 as the host and explored the near-infrared luminescence of Cr3+. As expected, this material achieved a long-wavelength NIR emission and excellent absorption efficiency based on the effect of Jahn–Teller distortion. The synthesized Ca4HfGe3O12:Cr3+ phosphor exhibits a broadband NIR emission peaking at 840 nm with a full width at half maximum of 150 nm, and the absorption efficiency reaches 48.0%. However, the internal quantum efficiency of the 6 mol% Cr3+-doped sample was measured to be only 35.3% and the integral emission intensity at 373 K kept only 60.1% of the initial intensity. The possible reasons for the unsatisfactory internal quantum efficiency and thermal stability were systematically analyzed, which provided a comprehensive understanding of the relationship between the crystal structure and the luminescent properties of Cr3+-activated garnet-type phosphors. Nevertheless, the as-prepared NIR pc-LED device exhibits a NIR output of 16.52 mW with a NIR photoelectric conversion efficiency of 5.92% driven by 100 mA current, indicating the potential of this material for application in NIR pc-LED.

研究领域: 材料科学 · 光学 · 光子学 · 固体物理
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Journal of Materials Chemistry C · 2024 ·Vol. 12 ·期 11 ·3980-3987 · IF 5.7

Remarkable near-infrared emission enhancement of Cr3+-activated BaGe4O9: the role of lithium ions

Yuechao Tang,Jin Yang,Qinan Mao,Yang Ding,Guojun Zheng,Lang Pei,Jiasong Zhong

Driven by the demand for miniaturized broadband near-infrared (NIR) light sources, considerable effort has been dedicated to developing Cr3+-activated phosphors. However, in many cases, the multivalent nature of the Cr ion is adverse to achieving highly efficient emission of Cr3+. Herein, strategic Li+ co-doping was employed to boost the NIR emission of BaGe4O9:Cr3+. In the phosphor, Li+ ions play a pivotal role in the distribution of Cr3+ on the two octahedral sites and the elimination of Cr4+ and crystal defects, leading to a 42.9-fold enhancement of Cr3+ emission. The obtained BaGe4O9:Cr3+,Li+ exhibited broadband emission centered at 808 nm, with an FWHM of 177 nm and an internal quantum efficiency of 61.3%. A fabricated pc-LED device utilizing the phosphor showcased an NIR radiant flux of 24.8 mW and a photoelectric efficiency of 8.9% at 100 mA. Furthermore, the application of the pc-LED in bio-imaging, night vision and information encryption was successfully demonstrated.

研究领域: 材料科学 · 光电技术 · 光子学
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CERAMICS INTERNATIONAL · 2024 · IF 5.1

Near-infrared luminescence in Ca3ZnMGe3O12:Cr3+ (M = Zr, Hf, Sn, Ti) garnet family for light-emitting diode applications

Chao Li,Ying Li,Yi Xu,Jiyou Zhong

Near-infrared (NIR) phosphors as crucial components of NIR light sources have multifunctional and smart spectroscopy applications, prompting an increasing research interest in developing efficient and stable NIR materials. Focusing on this issue, the present study explored the luminescent properties of Cr 3+ -doped Ca 3 ZnMGe 3 O 12 (M = Zr, Hf, Sn and Ti) garnet family. These materials exhibit an emission peak falls within the range of 785–805 nm with a full width at half maximum (FWHM) varying from 114 to 123 nm. Among them, the Ca 3 ZnZrGe 3 O 12 :Cr 3+ phosphor shows the highest photoluminescence quantum yield (PLQY = 60.3 %) and an excellent thermal stability ( I 423K / I 298K  = 77.51 %). Moreover, the performance of a prototype Ca 3 ZnZrGe 3 O 12 :Cr 3+ -containing NIR pc-LED device was estimated, which achieves an NIR output of 23.46 mW and a photonic efficiency of 14.09 % under 100 mA driving current. Non-destructive examination can be realized using this light source, demonstrating the good potential of the material in NIR spectroscopy applications.

研究领域: 材料科学 · 光电技术 · 光子学
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JOURNAL OF LUMINESCENCE · 2024 · IF 3.3

Highly thermal-stable broadband near-infrared emission of Cr3+ doped spinel CdGa2O4 phosphors

Jia Yang,Lifang Yuan,Di Qian,Haoyi Wu,Yahong Jin

Broadband near-infrared phosphor-converted LED (NIR pc-LED) light sources have attracted considerable attentions due to their widespread applications in active security defense, nondestructive detection, and online chemometric analysis. The broadband NIR phosphor, determining the overall performance of NIR pc-LED, is still to be explored. In this study, a series of CdGa 2-x O 4 :xCr 3+ phosphors are prepared by a solid state reaction. Owning to the electron population in 2 E and 4 T 2 energy levels of Cr 3+ ions with an intermediate crystal field, CdGa 2 O 4 :Cr 3+ exhibits a sharp line and broad band overlapped NIR emission spectrum, covering 600–1300 nm with a peak wavelength ( λ max ) of 740 nm and a full width at half maximum (FWHM) of 160 nm. A robust luminescence thermal stability that the NIR emission intensity remains 95 % of the initial level at 423 K is achieved, caused by a weak electron-phonon coupling (EPC) effect. Finally, a prototype NIR pc-LED is fabricated by using the as-obtained broadband NIR phosphor to demonstrate the application for night vision.

研究领域: 材料科学 · 光电技术 · 光子学
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JOURNAL OF THE AMERICAN CERAMIC SOCIETY · 2024 · IF 3.5

Cr3+-doped far-red phosphors with zero thermal quenching and excellent spectral matching for plant lighting application

Daochuan Duan,Shijie Yu,Yubo Wu,Yan Dong,Qiyue Shao,Jianqing Jiang

Far-red-emitting (700−740 nm) phosphors are essential for the fabrication of plant lighting phosphor-converted light-emitting diodes (pc-LEDs). However, the development of highly efficient, thermally stable, and spectrally matched far-red phosphors still remains a challenge. Herein, far-red GdAlO 3 :Cr 3+ (GAO:Cr 3+ ) phosphors were synthesized via solid-state reaction and investigated for plant lighting pc-LED applications. A low-temperature flux-assisted synthesis strategy was adopted to improve the crystalline quality, suppress the defect formation, and maintain the valence state of Cr 3+ in the phosphors, finally leading to significant luminescent enhancement (∼10 times). The GAO:Cr 3+ phosphors show the 2 E sharp-line emissions around 730 nm, which is highly matched with the far-red absorption band of plants. The optimized GAO:0.01Cr 3+ phosphor exhibits a high internal quantum efficiency of 98.3% and zero thermal quenching even up to 250°C. The fabricated pc-LED can generate an overall output power of 78.1 mW at 100 mA drive current, with a high energy conversion efficiency of 25.3%. The findings demonstrate the great potential of GAO:Cr 3+ as far-red-emitting phosphor materials for plant growth pc-LED applications.

研究领域: 材料科学 · 光电技术 · 植物生物学 · 农业工程
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Materials Today Chemistry · 2026 · IF 6.7

Ultra-efficient broadband NIR garnet phosphor via Ca2+-Sn4+/In3+-Al3+ double ion pair synergistical-substitution for multifunctional pc-LED applications in plant growth and night vision biological detection and information encryption

Wanqing Qian,Yan Shu,Cai Pan,Xueqing Yu,Weitao Su,Mikhail P. Kuz'min,Kaixin Song

Near-infrared phosphor conversion light emitting diode (NIR pc-LED) has important application value in plant growth, night vision imaging and biological detection. Its performance depends on the optimized design of fluorescent materials. Based on gadolinium gallium garnet (Gd 3 Ga 5 O 12 ), the near-infrared phosphors of Gd 2.5 (CaSn) 0.5 (InAl) 0.5 Ga 3.5-x O 12 : xCr 3+ (x = 0.01–0.09) were prepared by Ca 2+ -Sn 4+ /In 3+ -Al 3+ double ion pair synergistic substitution strategy. Under excitation of 450 nm blue light, the material exhibits broadband near-infrared emission covering the range of 650–1150 nm, with a quantum yield of 96.29 %. The material exhibits excellent thermal stability of luminescence and can maintain 82.4 % of the initial emission intensity at room temperature at 423K. The NIR pc-LED device based on this phosphor package achieved 67.37 mW output power and 16.68 % photoelectric conversion efficiency at 100 mA driving current. Application verification shows that the NIR pc-LED light source shows excellent performance in plant supplementary light, night vision security, information encryption and nondestructive testing applications. It fully proves that the broadband near-infrared emission of this series of phosphors can take into account multi-functional application scenarios and has broad development prospects.

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JOURNAL OF ALLOYS AND COMPOUNDS · 2025 · IF 6.3

Cr3 + -Cr3+ ion pair and crystal field engineering in magnetoplum type NIR-emitting phosphor for spectroscopic applications

Zhongyu Tong,Jiamin Li,Yuqing Yan,Feifeng Huang,Guanyu Zhu,Huanping Wang,Hua Yu,Degang Deng

The development of tunable broadband near-infrared (NIR) fluorescent materials with excellent luminescent properties is still a challenge for the next generation of intelligent NIR light sources. Here, a series of Cr 3+ doped magnetoplum type NIR phosphors were prepared by the high-temperature solid-state method. Their luminescent properties and the methods to broaden the luminescence bandwidth were discussed in detail. In BaAl 12 O 19 : Cr 3+ phosphor, Cr 3+ -Cr 3+ ion pair was constructed based on heavily doped Cr 3+ ions, so as to broaden its spectral emission range. With the increase of Cr 3+ doping concentration, the full width at half maximum (FWHM) of BaAl 12 O 19 : Cr 3+ sample increased from 18.5 nm to 93.7 nm. Furthermore, the crystal field environment of Cr 3+ ions in BaAl 12 O 19 : Cr 3+ phosphors was changed by cationic substitution (Sr 2+ substituted Ba 2+ ion site). The FWHM of NIR emission increases from 49.37 nm to 123.78 nm, and the internal quantum efficiency (IQE) increases from 65.6 % to 76.2 %, with good thermal stability ( I 373 K / I 298 K = 77.3 %). An intense NIR emission of 31.3 mW at 100 mA is produced by the phosphor-converted light-emitting diode (pc-LED), exhibiting a photoelectric efficiency of 15.3 %.

研究领域: 材料科学 · 光学材料 · 固态化学 · 光子学 · 发光光谱学
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MATERIALS RESEARCH BULLETIN · 2024 · IF 5.3

Mn4+-activated NaSr10Y5W4O30 far-red emitting luminescent material for plant growth lighting

Jinning Wang,Qiufeng Shi,Konstantin V. Ivanovskikh,Lei Wang,Jianwei Qiao,Haijie Guo,Ping Huang

A series of Mn 4+ -doped NaSr 10 Y 5 W 4 O 30 (NSYWO) phosphors have been successfully synthesized and further characterized to estimate their potentials for application as a far-red emitting component of pc-LED. An XRD analysis and crystal structure refinement have been carried out to characterize its quality. The doping concentration and temperature (80–500 K) dependent luminescence properties as well as decay kinetics have been studied and analyzed. It has been found that Mn 4+ substitutes for W 6+ sites resulting in far-red emission at 688 nm. The temperature quenching is attributed to thermal activation of an electron from Mn 4+ 2 E g to 4 A 2g state via crossover, yielding an activation energy of 0.35 eV. Furthermore, to assess practical application of the novel phosphor, a blue-emitting LED chip combined with NSYWO: 0.8 mol% Mn 4+ has been packaged. The light from both the blue-emitting LED chip and NSYWO: Mn 4+ phosphor was shown to be effectively utilized, revealing a good promise for application of the phosphor in the field of plant growth lighting.

研究领域: 材料科学 · 光电 · 植物生物学 · 光子学
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CERAMICS INTERNATIONAL · 2022 · IF 5.532

Ultra-broadband of up to 200 nm near-infrared phosphors based on one-site occupation strategy for multipurpose applications in light-emitting diodes

Xianzhe Zhang,Pengpeng Dai,Dawei Wen

Portable near-infrared (NIR) lighting source stimulates great efforts to exploit NIR phosphor-converted LEDs (pc-LEDs) that push the rapid development of broadband NIR-emitting phosphors. Although Cr 3+ -activated NIR phosphors designed by multisites occupation strategy show significant potential in emission bandwidth, poor spectral stability caused by different thermal quenching behaviors is a brake on practical application due to different local structure around Cr centers. One-site-based NIR phosphors seem to be an effective method to solve aforementioned problem. Herein, we report a type of new ultra-broadband one-site-based NIR-emitting phosphors NaSc 1-x P 2 O 7 :xCr 3+ (NSP:xCr 3+ ) with emission at 910 nm and full width at half maximum (FWHM) of up to ∼200 nm. Their FWHM value exceeds all one-site-based Cr 3+ -activated phosphors and some multiple-sites ones. Structural analysis and low-temperature spectra demonstrate that such impressive broadband NIR emission originates from Cr 3+ occupying at single octahedral Sc site. At 425 K, integrated emission intensity of NSP:0.04Cr 3+ phosphor maintains 53.8% of room temperature. A NIR pc-LED prototype is fabricated by using NSP:0.04Cr 3+ phosphor with a blue LED chip, and its multipurpose applications in non-destructive detection, night vision and analysis of foodstuff are demonstrated. These findings indicate that broadband NSP:0.04Cr 3+ NIR phosphor enabled by one-site occupation strategy has potential prospect for multipurpose NIR pc-LEDs applications.

研究领域: 材料科学 · 光电技术 · 光子学 · 固体物理 · 照明技术
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