CHEMICAL ENGINEERING JOURNAL
·
2023
·
IF 15.1
Xinsheng Tang,Tursun Abdiryim,Ruxangul Jamal,Xiong Liu,Fangfei Liu,Feng Xu,Abdukeyum Abdurexit,Qian Cheng,Nawrzhan Serkjan,Shuyue Xie,Yiming Liu
TiO 2 -based ultraviolet (UV) photodetectors (PDs) with broadband optical detection range are widely used in commercial and military applications. Nevertheless, the self-powered UV PDs of TiO 2 nanoarrays (NRs) have relatively low response rates and slow response times. Here, a high responsivity self-powered p-n heterojunction UV PD based on TiO 2 NRs: CQDs/FTO and PEDOS/FTO is fabricated by a simple face-to-face assembly process. The pyroelectric effect of TiO 2 NRs is enhanced by sensitizing TiO 2 NRs with CQDs, which would reduce the bandgap value of TiO 2 NR, broaden the range of photoresponse, and reduce recombination of electron-hole. Furthermore, the pyro-phototronic effect of CQDs, the energy level matching from CQDs to PEDOS and the interaction between –OH in CQDs and ethylene oxide groups in PEDOS enhance the performance of the prepared UV PDs. The TiO 2 NRs: CQDs//PEDOS UV PDs achieve a high photo-responsivity and photo-detectivity of 150.95 mA/W and 3.73 × 10 11 Jones at 0 bias (365 nm), respectively, which are better than those at wavelengths of 380 nm. We also found that the photocurrent induced via the pyro-phototronic effect increases with the light power intensity. This work points the way for photovoltaic and photo-induced pyro-phototronic effects to improve the performance of TiO 2 NRs-based UV PDs.
研究领域:
材料科学
·
光电子学
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DOI
高影响因子
CHEMISTRY OF MATERIALS
·
2020
·
IF 9.567
Luji Li,Hongda Li,Jie Li,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang
Development of new two-dimensional (2D) materials with high performance photoelectronic properties is critical for the future multifunctional and miniaturized optoelectronic devices. α-MnTe is an room-temperature antiferromagnetic, direct band gap p-type semiconductor with unique energy band structure and may have high photoelectric conversion efficiency and excellent photoelectric properties. However, controlled synthesis of the 2D α-MnTe single crystal has rarely been achieved so far. In this paper, 2D α-MnTe nanosheets with a NiAs-type hexagonal structure, a stable 2D nonlayered p-type semiconductor, are prepared for the first time via van der Waals epitaxy chemical vapor deposition (CVD) on mica. The thickness of 2D α-MnTe can be well tuned by the reaction temperature and gas flow. The photoelectric performance of the photodetector based on the 2D α-MnTe nanosheet shows that the 2D α-MnTe nanosheet based photodetector has an ultrahigh photoresponsivity (2599 A/W), external quantum efficiency (EQE, 8.065 × 105%), and excellent photodetectivity (3.32 × 1012 jones) at an illumination of 400 nm @ 0.062 mW/cm2 at 3 V, which is one of best performances of 2D material based photodetectors. Our work provides a new avenue to high performance 2D optoelectronic devices.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
半导体物理
·
薄膜生长
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DOI
高影响因子
ACS Photonics
·
2026
·
IF 6.7
Yan Yang,Haiqiang Huang,Lei Liu,Qiuhong Tan,Yifei Huang,Lujun Yang,Hui Zhang,Xuejin Zhang,Feng Song,Yingkai Liu
Two-dimensional (2D) Ruddlesden–Popper perovskite phenylethylammonium lead iodide ((PEA)2PbI4) possesses potential photoelectronic properties and is considered to be an ideal material for photodetectors. However, single devices commonly suffer from low responsivity, slow response speed, and narrow detection range, which hinder their applications in imaging, communications, and artificial intelligence (AI). In this work, high-quality 2D (PEA)2PbI4 tetragons (TTs) were synthesized via a unique liquid–air interface floating method and integrated with cadmium selenide (CdSe) nanobelts (NBs) to construct a novel hybrid heterojunction photodetector. It confirms that the formation of type-II band alignment at the heterointerface enables efficient interfacial charge transfer. Notably, the (PEA)2PbI4/CdSe heterojunction hybrid device exhibits exceptional performance under 450 and 682 nm monochromatic illumination: extremely high responsivity (R) (2.80 × 103 and 6.39 × 103 A/W), excellent detectivity (D*) (4.09 × 1013 and 9.32 × 1013 Jones), large external quantum efficiency (EQE) (7.74 × 105% and 1.16 × 106%), and remarkable Ion/Ioff ratio (3.60 × 105 and 8.66 × 105), as well as fast response speeds (rise/decay time: 108/265 μs and 86/196 μs). Furthermore, the hybrid device overcomes the intrinsic bandgap limitation of (PEA)2PbI4, extending its photoresponse to cover nearly the entire visible spectrum and demonstrating reliable imaging capability. This study provides an innovative strategy for developing high-performance photodetectors with significant practical application potential.
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高影响因子
APPLIED SURFACE SCIENCE
·
2026
·
IF 6.6
Shiao Feng,Zirui Huang,Xiyu Jia,Mengjiao Dong,Chun Sun,Yonghui Zhang,Chao Fan
A SnS 2 /graphene/SnS trilayer vdW heterojunction was constructed. • Graphene promotes charge transport and suppresses dark current. • The device achieves 5656.3 A W −1 responsivity at 405 nm. • Broadband detection from 405 to 850 nm is demonstrated. • Self-powered operation and imaging applications are achieved. Two-dimensional (2D) semiconductors are promising materials for broadband photodetection, benefiting from their favorable light–matter interaction and electrical properties. As an n-type layered semiconductor, SnS 2 is suitable for photodetection because carriers can move efficiently in it and incident light can be effectively absorbed, making it suitable for photodetection applications. In this work, SnS 2 /graphene/SnS (SnS 2 /Gr/SnS) trilayer van der Waals heterojunctions and corresponding photodetectors were fabricated and investigated. Owing to the graphene interlayer, which serves as both a carrier transport layer and a barrier layer, The detector responds to light over a wide spectral range, covering both the near-ultraviolet (NUV) and near-infrared (NIR) regions. Under 405-nm irradiation, the photodetector reaches an R value of 5656.3 A·W −1 and a D ⁎ value of 3.33 × 10 13 Jones. When the wavelength is extended to 850 nm, the responsivity remains 574.2 A·W −1 . The device also shows clear self-powered behavior, outperforming the conventional SnS 2 /SnS bilayer heterojunction photodetector. These results offer an effective strategy for improving SnS 2 -based broadband photodetectors and promotes their potential applications in optical communication and single-pixel imaging. Download: Download high-res image (225KB) Download: Download full-size image
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DOI
高影响因子
DYES AND PIGMENTS
·
2025
·
IF 4.2
Pengbo She,Lei Xing,Mingyang Zhou,Shu Xing,Yaozheng Yang,Xiuxiu Li,Xuanxuan Ma,Tao Cheng,Jinjian Wei,John K. Bielicki,Jing Xu
The utilization of near-infrared fluorescent probes for the detection of amyloid-β (Aβ) in Alzheimer's disease (AD) has been extensively investigated. Nevertheless, the development of probes that can simultaneously meet the requirements for rapid, accurate, and visual detection remains challenging. In this study, a novel Aβ-targeted fluorescent probe, designated NQM-FN , has been designed based on a D-π-A structural framework. NQM-FN incorporates quinoline-malononitrile (QM) as the fluorescent component and N,N- dimethylmino as the recognition unit. By utilizing a push-pull electronic conjugation system (with N,N- dimethylmino as electron donor; sulfonic acid and cyanide groups as electron acceptors), NQM-FN induces near-infrared emission and enhances blood-brain barrier (BBB) permeability. Fluorescence analysis indicated that NQM-FN is non-emissive in aqueous environments due to aggregation-caused quenching (ACQ), yet it demonstrates robust fluorescence in organic solvents, such as ethanol. When bound to Aβ aggregates, conformational rigidification suppresses twisted intramolecular charge transfer (TICT), facilitating rapid ‘off-on’ detection with increased emission intensity. NQM-FN interacts with Aβ42 aggregates in PBS solution, showing a rapid “off-on” switch (approximately 10 s). MTT assays revealed that the NQM-FN probe has good cellular compatibility, sustaining over 80 % cell viability. Confocal laser scanning microscopy (CLSM) imaging confirmed the successful real-time, sensitive, and visual detection of Aβ42 aggregates within live cells using the NQM-FN probe. This research introduces an innovative method for synthesizing fluorescent probes for the detection of Aβ42 aggregates, and the developed NQM-FN probe shows great promise as a tool for fluorescent detection.
研究领域:
生物化学
·
医学诊断
·
分子探针设计
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DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2020
·Vol. 30
·期 24
·2001604
·
IF 16.836
Lingxia Zheng,Xiaolei Deng,Yongzhi Wang,Jiaxin Chen,Xiaosheng Fang,Liang Wang,Xiaowei Shi,Huajun Zheng
A novel inorganic–organic heterojunction (TiO 2 /P3HT (poly(3-hexylthiophene)) is easily prepared by a combination of anodization and vacuumed dip-coating methods, and the constructed flexible fibrous photodetector (FPD) exhibits high-performance self-powered UV–visible broadband photoresponse with fast speed, high responsivity, and good stability, as well as highly stable performance at bending states, showing great potential for wearable electronic devices. Moreover, Au nanoparticles are deposited to further boost the responsivity and selectivity by regulating the sputtering intervals. The optimal Au/TiO 2 /P3HT FPD yields an ≈700% responsivity enhancement at 0 V under 350 nm illumination. The sharp cut-off edge and high UV–visible rejection ratio (≈17 times higher) indicate a self-powered flexible UV photodetector. This work provides an effective and versatile route to modulate the photoelectric performance of flexible electronic devices.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
柔性电子学
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DOI
高影响因子
Small
·
2024
·
IF 13
Bocong Zou,Yang Yang,Hulin Wang,Weijun Li,Lin Wang,Fengmei Gao,Dongdong Zhang,Marko Gloginjić,Marko Erić,Srdjan Petrović,Weiyou Yang,Huan He,Shanliang Chen
In the realm of photodetector (PD) technology, photoelectrochemical (PEC) PDs have garnered attention owing to their inherent advantages. Advances in this field depend on functional nanostructured materials, which are pivotal in improving the separation and transport of photogenerated electron–hole pairs to improve device efficiency. Herein, a highly photosensitive PEC UV PD is built using integrated self-supporting SiC/ZnS heterojunction nanowire array photoelectrodes through anodization and chemical deposition. Compared with the original SiC nanoarrays, the optimized SiC/ZnS-25 nanoarrays exhibit high photocurrent density ( D ph , 809.2 µA cm −2 ), rapid rise/decay times ( τ r / τ d , 4/21 ms), high responsivity ( R λ , 1.226 A W −1 ), remarkable detectivity ( D * , 2.517 × 10 11 Jones), and large external quantum efficiency ( EQE , 40.57%) under 375 nm UV light with a bias voltage of 0.6 V. Furthermore, SiC/ZnS-25 delivers excellent self-powered performance, with R λ , D * , and EQE reaching 0.91 A W −1 , 1.69 × 10 11 Jones, and 30.24%, respectively. In addition, the device exhibits excellent long-term operation and aging stability under a bias voltage of 0.6 V and under self-powered conditions. The excellent photodetection behaviors of the SiC/ZnS PEC PD are mainly ascribed to the synergistic effect of the novel well-aligned nanowire geometry, heterojunction with ZnS nanofilms of optimal thickness, and integrated self-supporting configuration of the photoelectrode.
研究领域:
材料科学
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纳米技术
·
光电子学
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产品关联
DOI
PubMed
高影响因子
Advanced Electronic Materials
·
2018
·Vol. 4
·期 7
·1800154
·
IF 5.466
Qiu Li,Aixiang Wei,Jianting Lu,Lili Tao,Yibin Yang,Dongxiang Luo,Jun Liu,Ye Xiao,Yu Zhao,Jingbo Li
Layered 2D semiconductors, such as graphene and transition-metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large-size (up to 330 µm) and high-quality single-crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field-emission scanning electron microscopy, X-ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as-grown SnS nanoplates are fabricated with back-gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm 2 V −1 s −1 . Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near-infrared spectral range. Typically, photoresponsivity of 197.7 A W −1 , photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 10 4 % are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large-area single crystal SnS nanoplate a promising candidate for future application in optoelectronics.
研究领域:
材料科学
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纳米科技
·
半导体物理
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光电子学
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凝聚态物理
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DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Yujie Wang,Yurui Han,Yuefei Wang,Youheng Song,Shihao Fu,Chong Gao,Bingsheng Li,Aidong Shen,Yichun Liu
In this study, a PEDOT:PSS@graphene composite structure was engineered by incorporating graphene into PEDOT:PSS, thereby significantly enhancing its electrical conductivity. This composite layer was subsequently integrated with high-crystallinity β-Ga2O3 microwires (MWs), synthesized via chemical vapor deposition (CVD), to fabricate a self-powered deep-ultraviolet (DUV) photodetector. The device exhibited an ultra-low dark current of only 0.13 pA under a bias of 10 V, highlighting its superior noise suppression capability. More importantly, under 245 nm illumination at a bias of 0 V, the photodetector demonstrated a remarkable responsivity of 65 mA W−1, which represents enhancements by factors of 48 and 4 compared with PEDOT:PSS/β-Ga2O3 MW and graphene/β-Ga2O3 MW heterostructures, respectively. In addition, the device achieved a high specific detectivity of ∼1012 Jones. These outstanding photoresponse characteristics can be primarily attributed to the incorporation of graphene, which improves the conductivity of the PEDOT:PSS layer while simultaneously strengthening the built-in electric field at the heterojunction interface, thereby facilitating more efficient separation and transport of photogenerated carriers. Overall, this work demonstrates a promising strategy for designing organic–inorganic hybrid heterostructures and offers new insights into the development of high-performance, self-driven solar-blind photodetectors.
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高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2024
·
IF 4.1
Xiyu Jia,Weishuai Duan,Mingchen Xu,Gaoning Fan,Pengyu Zhou,Yonghui Zhang,Hongxing Zheng,Mengjun Wang,Chao Fan
Near-violet (NV) detectors based on two-dimensional materials have attracted much attention due to their atomic-scale thickness and various band gaps. Among them, tin disulfide (SnS
2
) has demonstrated significant potential for high-performance NV detectors due to its unique photoelectric properties. However, SnS
2
-based NV detector still have drawbacks such as low responsivity and high dark current. In this work a tri-layer van der Waals heterojunction of tin disulfide/h-boron nitride/tin selenide (SnS
2
/h-BN/SnSe) is proposed. The detector based on such tri-layer heterojunction exhibits an excellent self-powered detection performance to 405-nm NV illumination with a responsivity of 1.5 AW
-1
, a low dark current of 2.6 pA, and a high fill factor of 51.8%, superior to detectors based on SnS
2
/SnSe bi-layer heterojunctions and most other two-dimensional materials. This study provides an efficient optimizing strategy for SnS
2
-based self-powered detector, thereby offering an opportunity for implementing innovation in NV detectors.
研究领域:
材料科学
·
光电子学
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产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2024
·
IF 18.5
Bocong Zou,Chunmei Chen,Li Sun,Yan Lin,Zhiheng Liu,Weijun Li,Lin Wang,Fengmei Gao,Huan He,Weiyou Yang,Dongdong Zhang,Shanliang Chen
Battery-free photodetection is necessary for underwater optical communication, which poses extremely high requirements in terms of the self-powering capability of photodetectors (PDs) and their ability to operate in harsh liquid environments. Emerging photoelectrochemical (PEC) PDs are appealing owing to their inherent aqueous operation behaviors with highly tunable photoresponses. Herein, a novel self-powered PEC ultraviolet (UV) PD applicable to all-scenario harsh underwater environments, including seawater at different latitudes and solutions with different pH values and temperatures, is demonstrated based on integrated self-supporting SiC/SnO 2 heterojunction nanoarrays. The SiC/SnO 2 heterojunction nanoarrays are achieved by utilizing the anodic oxidation and chemical bath deposition. The SiC/SnO 2 PEC PD demonstrates excellent photodetection performance with rapid rise/decay times ( τ r / τ d , 30/120 ms), high responsivity ( R λ , 1.97 A W −1 ), remarkable detectivity ( D * , 1.98 × 10 11 Jones), and large external quantum efficiency ( EQE , 65.5%) in seawater under 375 nm UV light illumination with zero bias voltage. Moreover, the PEC PD delivers a high photoresponse and excellent aging stability in different latitudes of the world's oceans. The photodetection capability is robust even under harsh conditions, such as strongly acidic and alkaline liquid conditions, and at high temperatures. The developed device is a new type of photodetection device for future all-scenario underwater optical communication.
研究领域:
材料科学
·
光电工程
·
纳米技术
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产品关联
DOI
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Silu Peng,Chaoyi Zhang,Xianchao Liu,Jiayue Han,Chunyu Li,Hongxi Zhou,He Yu,Chao Chen,Jun Gou,Jun Wang
PbSe is one of the most representative materials in lead chalcogenide semiconductors, possessing a narrow bandgap and demonstrating excellent absorption and photoresponse. However, undoped PbSe typically exhibits low carrier concentrations, along with large dielectric constants and thermal expansion coefficients, imposing limitations on its application in a high-performance photodetector. Doping is an effective strategy to overcome the inherent defects and enhance the optical and electrical properties. In this study, different compositions of Pb1−xLaxSe samples were obtained through solid-phase method doping with the rare earth element La. The doped Pb0.7La0.3Se showed superior optical and electrical properties and photoresponse. Additionally, based on the approach of constructing heterojunctions with thin films and two-dimensional (2D) materials, a self-powered p−n heterojunction photodetector, Pb0.7La0.3Se/WSe2, has been successfully fabricated. The device exhibited a continuous and stable light response from 405 to 1550 nm. Moreover, under 0 V bias and 650 nm laser irradiation, the device achieved the responsivity and specific detectivity of 22.85 A/W and 1.81 × 1012 Jones, along with a rapid response/recovery time (162/135 μs), demonstrating excellent photovoltaic effects and outstanding photodetection performance. The construction of heterojunctions with film and 2D materials provides a novel approach to achieving high-performance photodetectors. Simultaneously, the Pb0.7La0.3Se/WSe2 detector shows enormous potential in the field of superior photodetectors with a high on/off ratio, low noise, broadband, rapid response, and miniaturization.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）