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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING · 2025 · IF 4.6

Far-red emitting NaAl5O8: Cr3+ phosphors with high thermal stability for plant cultivation applications

Yingfang Li,Hai Wu,Bin Cao,Tingting Zhang,Yixi Lu,Chaoyong Deng,Weichao Huang

Developing far-red phosphors with high thermal stability and spectral matching is of great significance for plant growth light-emitting diodes (LEDs). In this paper, NaAl 5 O 8 : Cr 3+ far-red emitting phosphors were synthesized by the high-temperature solid-phase reaction method. The crystal field parameters, luminescence properties, and thermal quenching behavior were investigated in detail. The NaAl 5 O 8 : Cr 3+ phosphor showed a far-red emission band centered at 707 nm, which is attributed to the 2 E→ 4 A 2 transition of Cr 3+ ions. Notably, NaAl 5 O 8 : Cr 3+ phosphor exhibited outstanding thermal stability, with an integrated emission intensity reaching 109 % at 423 K compared to that at room temperature (298 K), corresponding to a 9 % increase in emission intensity at high temperature. The full width at half maximum in the temperature-dependent emission spectra increased with increasing temperature. Eventually, a prototype LED device was fabricated by integrating the NaAl 5 O 8 : Cr 3+ phosphors and a commercial 410 nm LED chip. The obtained electroluminescence spectrum of the LED was well matched with the absorption band of the photosensitive pigment P FR , and the fabricated LED performed well in plant cultivation applications. In the sunflower plant growth experiment, the average growth rate under pc-LED irradiation was 1.8 times that under sunlight. These results indicate that NaAl 5 O 8 : Cr 3+ phosphor has great potential for application in plant growth LEDs.

研究领域: 材料科学 · 光电子学 · 农业光学 · 无机化学 · 固体物理
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Journal of Materials Chemistry C · 2022 ·Vol. 10 ·期 15 ·5905-5913 · IF 8.067

High-efficiency red photoluminescence achieved by antimony doping in organic–inorganic halide (C11H24N2)2[InBr6][InBr4]

Jiawei Lin,Zhongnan Guo,Niu Sun,Kunjie Liu,Xin Chen,Jing Zhao,Quanlin Liu,Wenxia Yuan

Organic–inorganic metal halides (OIMHs) exhibit various crystal structures and strong broadband emission, showing enormous potential for solid-state lighting and displays. In this work, we report a new lead-free OIMH (C11H24N2)2[InBr6][InBr4], which adopts a typical zero dimensional (0D) structure with the inorganic polyhedra separated by the large organic cations. Different from the general 0D In-based OIMHs with single octahedral [InBr6]3− units, (C11H24N2)2[InBr6][InBr4] contains both [InBr6]3− octahedra and [InBr4]− tetrahedra. It shows a large optical bandgap of 3.95 eV and excellent ambient stability. In addition, Sb dopants can be included in the structure, and an obvious preference for substituting the In atoms in the [InBr6]3− octahedra has been determined by analyzing the related bond lengths and polyhedral distortion. (C11H24N2)2[InBr6][InBr4] exhibits a broadband red emission (660 nm) that is ascribed to self-trapped excitons (STEs) in octahedral [InBr6]3−, and the photoluminescence quantum yield (PLQY) can be significantly enhanced from 8% to 61% upon Sb doping, mainly as a result of the extra photo-induced excitons from [SbBr6]3−. Density functional calculations reveal the direct bandgap nature of (C11H24N2)2[InBr6][InBr4], which is transferred to an indirect band gap after Sb doping due to the formation of the intra-gap band. A white light-emitting diode (WLED) was fabricated by combining the red emissive (C11H24N2)2[InBr6][InBr4]:Sb3+ and commercial green and blue phosphors, exhibiting a high color-rendering index of 88.7. Our work reports high-efficiency red photoluminescence (PL) in this special 0D double-inorganic-unit system, and demonstrates its potential applications for solid-state lighting.

研究领域: 材料科学 · 光学 · 固态照明
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DALTON TRANSACTIONS · 2023 ·Vol. 53 ·期 3 ·996-1003 · IF 4

A promising yellow-emitting langbeinite-type phosphor NaBaY2(PO4)3:Eu2+ for WLEDs

Qiang Zhang,Xin Ding,Bin Liu,Yuhua Wang

The development of novel phosphors with excellent luminescence properties for white light-emitting diodes (WLEDs) is always a formidable task. Compared with the traditional laborious and aimless “trial and error” experiments, a mineral-inspired prototype strategy can provide an efficient and accurate method. Herein, for the first time, a novel yellow-emitting phosphor NaBaY2(PO4)3:Eu2+ was discovered using the mineral-inspired prototype strategy and cation substitution method. The phosphor was prepared via the high-temperature solid-state reaction method, and its crystal structure, luminescence properties and potential application for WLEDs were systematically investigated. The NaBaY2(PO4)3 phase was derived from the K2Mg2(SO4)3-type mineral structure and a photoluminescence study revealed that the phosphor can emit bright yellow light with a maximum at 545 nm upon excitation at 351 nm. A WLED lamp was fabricated by the use of a blend of commercial blue-emitting BaMgAl10O17:Eu2+, yellow-emitting NaBaY2(PO4)3:Eu2+ and red-emitting (Ca, Sr)AlSiN3:Eu2+ phosphors with a 380 nm LED chip. The CIE, CCT, Ra and efficiency of the as-fabricated LEDs were measured to be equal to (0.366, 0.365), 4327 K, 91.2 and 40.8 lm W−1, respectively. These results suggest that NaBaY2(PO4)3:Eu2+ could be a promising candidate for n-UV WLEDs.

研究领域: 材料科学 · 无机化学 · 光电子学 · 半导体照明 · 发光材料
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DALTON TRANSACTIONS · 2022 ·Vol. 51 ·期 31 ·11703-11712 · IF 4.569

Narrow-band Rb1−yKyNa3(Li3SiO4)4:Eu2+(0 ≤ y ≤ 1) cyan-blue phosphors for full-spectrum white LEDs

Jun Sun,Minghui Zhou,Bei Zhang,Youjie Hua,Feifei Huang,Hongping Ma,Renguang Ye,Shiqing Xu

A series of Rb1−yKyNa3(Li3SiO4)4:Eu2+(0 ≤ y ≤ 1) phosphors were successfully synthesized through a high-temperature solid-state reaction. The introduction of K+ into the RbNa3(Li3SiO4)4:Eu2+ phosphor to partially or completely replace Rb+ allows the emission spectrum to be modulated from blue (λ = 473 nm, FWHM = 22.5 nm) to a narrow cyan band (λ = 485 nm, FWHM = 21.1 nm). As the K+ ion content increases, the space group of the phosphor evolves from I4/M to I41/A. The complete replacement of Rb+ by K+ results in the KNa3(Li3SiO4)4:Eu2+ cyan phosphor, which shows excellent thermal stability (the comprehensive emission loss is only 8% at 150 °C) and can be used to fill the cyan light gap in white LED devices. By adding the KNa3(Li3SiO4)4:Eu2+ cyan phosphor in packaging with yellow and red phosphors, the color rendering index is increased from 90.2 to 97.1 and the correlated color temperature improved to 3658 K. These results indicate that the cyan phosphor has important application value in full-spectrum white LEDs.

研究领域: 材料科学 · 光学工程 · 无机非金属材料 · 发光材料 · 半导体照明
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DALTON TRANSACTIONS · 2024 ·Vol. 53 ·期 30 ·12465-12476 · IF 3.5

Fluorescence properties of novel deep-red phosphor LiMg4SbO7:Mn4+ with excellent quantum efficiency and color purity for warm white LEDs

Fei Wang,Huihui Chen,Shiwei Zhang,Huiqing Jin

Red fluorescent materials have important application value in the background light and LED lighting fields of displays. In this work, a novel type of rare earth free deep-red phosphor LiMg4SbO7:Mn4+ was prepared successfully, and its crystal structure, microstructure, fluorescence spectrum, quantum yield, thermal stability, fluorescence lifetime, color coordinates and color purity were studied in detail. The excitation spectra of LiMg4SbO7:Mn4+ phosphors are located at 200–600 nm, which can be matched with ultraviolet, near-ultraviolet, and blue-light chips. The exciting result is that the LiMg4SbO7:0.002Mn4+ phosphor exhibits astonishing quantum efficiency, thermal stability and color purity. Finally, the developed LiMg4SbO7:Mn4+ and the yellow phosphor Y3Al5O12:Ce3+ (YAG:Ce3+) were mixed and coated on a blue light chip (460 nm) to produce a w-LED, which exhibited warm white luminescence with color coordinates of (0.3575, 0.3809), correlated colour temperature (CCT) of 4687 K, and color rendering index (CRI) of 83.6. It is reasonable to consider that LiMg4SbO7:Mn4+ phosphors with excellent photoluminescence performance have great application value in LED lighting fields.

研究领域: 材料科学 · 发光材料 · 半导体照明 · 光学工程 · 固态照明
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DALTON TRANSACTIONS · 2022 ·Vol. 51 ·期 29 ·10965-10972 · IF 4.569

Crystal-field induced tuning of luminescence properties of Na3GaxAl1−xF6:Cr3+ phosphors with good thermal stability for NIR LEDs

Jianbang Zhou,Pengyun Chen,Junhao Li,Mingming Yang,Wei Jiang,Qiuhong Zhang,Haiyong Ni,Jiansheng Huo

Cr3+-Activated broadband near-infrared (NIR) luminescence materials are attracting much attention as next-generation smart NIR light sources that are widely used in night vision, bioimaging, medical treatment, and many other fields. Herein, a series of Na3GaxAl1−xF6:Cr3+ NIR phosphors with broadband emission and tunable luminescence properties were designed and prepared. The luminescence intensity, peak position and full width at half maximum (FWHM) of the materials can be controlled by adjusting the crystal field strength. Furthermore, Na3Ga0.75Al0.25F6:0.35Cr3+ exhibited high luminous efficiency and the emission intensity remained 81% at 423 K compared with the initial value at 298 K. The structural confinement and the electron–phonon coupling (EPC) effect may account for its good thermal stability. Finally, a pc-NIR-LED device with a photoelectric conversion efficiency of 6.53% at 350 mA was fabricated by combining the as-prepared NIR phosphor and a blue InGaN chip, and its applications in night vision and medical fields were further investigated. This work will promote the development of NIR phosphors with tunable luminescence properties.

研究领域: 材料科学 · 光学工程 · 生物医学工程 · 纳米医学 · 光子学 · 转化医学
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CERAMICS INTERNATIONAL · 2023 ·Vol. 50 ·期 1 ·1452-1460 · IF 5.2

An ultra broadband NIR phosphor LiScSnO4:Cr3+ with emission wavelength peaking at 900 nm for component analysis

Shangwei Wang,Ran Pang,Xuexia Chen,Tao Tan,Qi Wang,Chengyu Li,Su Zhang,Taixing Tan,Hongpeng You,Hongjie Zhang

Near-infrared phosphor conversion light-emitting diode (NIR pc-LED) is a widely used ideal NIR light source due to its unique advantages of low cost, energy saving, compactness and long operational lifetime. However, there is currently a scarcity of appropriate phosphor for NIR light sources utilized in spectral detection, with emission peak larger than 850 nm and steady spectrum output of ultra broadband spectra. Here, a broadband Cr 3+ activated LiScSnO 4 (LSS) phosphor ( λ ex-max  = 460 nm) matching the pump band of commercial blue LED chips has been developed, which shows a long wavelength NIR emission peaking at 900 nm. Cr 3+ simultaneously replace the Wyckoff site co-occupied by Sc and Sn in LSS. Due to the difference of local environment of the specific crystal field , two different wide emission bands are caused. These two broad emission bands both contribute to the broadband luminescence with a full width at half maximum (FWHM) of 227 nm. Benefiting from the crystallography consistent Wyckoff position occupation of Cr 3+ ions, the spectral distribution of LSS:Cr 3+ exhibit excellent stability over a wide temperature span (80–423 K). The broadband NIR pc-LED prototype based on LSS:Cr 3+ shows great potential in NIR spectrum detection, night vision imaging applications.

研究领域: 材料科学 · 光学工程 · 固态物理 · 光电子学 · 分析化学
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SOLID STATE COMMUNICATIONS · 2017 · IF 1.554

Facile synthesis of yellow-emitting CaAlSiN3:Ce3+ phosphors and the enhancement of red-component by co-doping Eu2+ ions

Jingjing Chen,Yang Zhao,Guanghao Li,Zhiyong Mao,Dajian Wang,Lijian Bie

In this paper, facile synthesis of CaAlSiN 3 :Ce 3+ yellow-emitting phosphors under atmospheric pressure at a moderate temperature and their photoluminescent properties are reported. The prepared CaAlSiN 3 :Ce 3+ phosphors exhibit a broad yellow emission band positioned at 580   nm and covering a bandwidth of 150   nm. The thermal stability of CaAlSiN 3 :Ce 3+ phosphors shows obvious superiority than the commercial YAG: Ce 3+ phosphor, indicating its promising application prospect in power LEDs . In addition, the enhancement of red-light component for CaAlSiN 3 :Ce 3+ phosphor is demonstrated by co-doping Eu 2+ ions. This study offers a facile route to prepare CaAlSiN 3 :Ce 3+ yellow-emitting phosphors, which may be used as a promising candidate for high performance white LEDs .

研究领域: 材料科学 · 发光材料 · 无机化学 · 固态照明 · 光电功能材料
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING · 2020 ·Vol. 126 ·期 9 ·711 · IF 1.81

A high efficient and anti-thermal dual-emission blue-green phosphors for warm white LEDs

Liu Dong,Jin Yahong,Xiong Guangting,Lv Yang,Wu Haoyi,Ju Guifang,Chen Li,Hu Zhengfa,Hu Yihua

A series of broadband blue-green phosphors Rb 0.5+ y Na 1.5− y (Li 3 SiO 4 ) 2 : x Eu 2+ (0 ≤  y  ≤ 0.4, 0.01 ≤  x  ≤ 0.08) were synthesized by the high-temperature solid-state reaction. The powder X-ray diffraction was employed to explore the crystal structural evolution from RbNa 3 (Li 3 SiO 4 ) 4 to RbNa(Li 3 SiO 4 ) 2 with the increasing of Rb + . The spectra show the optimized composition was determined as y  = 0.4. The luminescence, lifetime decay curves and thermal steadily spectra of Rb 0.9 Na 1.1 (Li 3 SiO 4 ) 2 : x Eu 2+ phosphors were investigated in detail. The phosphor of Rb 0.9 Na 1.1 (Li 3 SiO 4 ) 2 :Eu 2+ shows suitable visible spectra (450–550 nm, cover the blue and green regions), excellent thermal quenching (104%@150 °C of the initial integrated intensity at room temperature under 396 nm excitation) and broad excitation spectrum (320–450 nm). Finally, a commercial near-UV LED devices (395 nm) were fabricated with the Rb 0.9 Na 1.1 (Li 3 SiO 4 ) 2 :Eu 2+ phosphor as blue-green and commercial red phosphor CaAlSiN 3 :Eu 2+ with a warm color temperature of 3104 K and a color rendering index of 91.8. This result indicated that Rb 0.9 Na 1.1 (Li 3 SiO 4 ) 2 :Eu 2+ may be a promising blue-green phosphor for indoor lighting.

研究领域: 材料科学 · 发光材料 · 固体化学 · 照明技术 · 无机化学
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING · 2025 · IF 4.6

Double-passivated MAPbBr3 nanocrystals with nitrogen-doped graphene quantum dots and polyvinylidene fluoride for white light LEDs

Yi Zhu,Feng Tong,Zheng Chen,Zijun Huang,Sheng Huang,Xiuquan Gu

This study addresses the challenge of synthesizing highly emissive and stable MAPbBr 3 nanocrystals (NCs) for practical device applications. A double-passivation approach was developed through using nitrogen-doped graphene quantum dots (NGQDs) and polyvinylidene fluoride (PVDF) during the in-situ synthesis of MAPbBr 3 NCs. By optimizing the amount of NGQDs, the resulting MAPbBr 3 /PVDF/NGQDs composite films exhibited green emission at 522 nm with a narrow spectral width of 17.7 nm. The films demonstrated exceptional stability, retaining 60 % of their initial photoluminescence (PL) intensity after 144 h of water immersion and 96 % of their initial intensity after 10 min of heating at 100 °C. This stability is attributed to the NGQDs reducing defects and acting as nitrogen-enhanced sites that promote consistent crystal formation. Additionally, the composite film was used to fabricate a white light-emitting diode (WLED) with a color gamut coverage rate of 125 % under the National Television Standards Committee (NTSC) standard and 93.8 % under the Rec.2020 standard. This work might present a synergistic strategy combining in-situ defect passivation with encapsulation, offering a viable solution to the stability-efficiency trade-off in perovskite NCs and advancing high-color-gamut flexible displays.

CAS / MDL: 3458-72-8 68-12-2
研究领域: 材料科学 · 光电技术 · 纳米技术
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CERAMICS INTERNATIONAL · 2025 ·Vol. 51 ·期 26 ·51467-51475 · IF 5.6

Site-selected emission and excitation of Bi3+-activated scandium silicate used for multi-mode fluorescent anti-counterfeiting and WLEDs

Wenjie Wang,Jianyan Ding,Quansheng Wu

In recent years, multi-mode fluorescent anti-counterfeiting technology has been regarded as a promising replacement for traditional single-fluorescent-pattern-based methods in ensuring information security. This advancement necessitates phosphors with multi-mode photoluminescent properties. In contrast to the conventional complex approach involving the integration of downshifting and upconversion phosphors, this study demonstrates the achievement of multiple visible-light emissions in Bi 3+ -activated scandium silicate NaSrScSi 2 O 7 , which exhibits sensitivity to near-ultraviolet light. Under the excitation at 370 nm, Bi 3+ -activated NaSrScSi 2 O 7 emits a narrow-band blue light, yet it can emit a broad-band cyan light under the excitation at 340 nm. The significant photoluminescence property of Bi 3+ ion is proved to originate from special crystal structure of NaSrScSi 2 O 7 , which provides multiple crystallographic sites for accommodating Bi 3+ ion. Benefiting from the characteristic of NaSrScSi 2 O 7 , the sample performs excellent thermal and chemical stability. A warm WLED device has been fabricated by using as-prepared sample. Finally, a pattern produced by Bi 3+ -activated NaSrScSi 2 O 7 is proved to emit distinguishing visible light under the common 365 nm and 340 nm near-ultraviolet lamp, which is considered to pave a simple approach for realizing high-level fluorescent anti-counterfeiting technology.

研究领域: 材料科学 · 光学材料 · 固态化学 · 发光学 · 防伪技术
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JOURNAL OF ALLOYS AND COMPOUNDS · 2025 · IF 6.3

Solution growth of CsPbBrxI3-x bulk crystals and their optical and X-ray detection properties

Le Xu,Hongjie Liu,Sixian Chen,Yuanzhi Tang,Haibin Sun,Xue Guo,Yurun Feng,Qiangqiang Hu,Guodong Zhang,Xutang Tao

In this study, the δ-phase CsPbBr x I 3-x single crystals (SCs) exhibiting notable environmental stability were investigated for the first time. Bulk crystals in centimeter-scale were successfully grown using the solution method, with EDS results confirming the chemical formula as CsPbBr 0.6 I 2.4 . The CsPbBr x I 3-x crystals demonstrate strong absorption at wavelengths less than 475 nm, with a calculated optical bandgap of 2.55 eV. Notably, the crystals also exhibit a broad emission band with a full width at half maximum (FWHM) of 247 nm, suggesting potential applications in optically driven white light emitting diodes (WLEDs). Additionally, the X-ray detection properties were characterized. All results indicate that CsPbBr x I 3-x crystals hold significant potential to harness their stability for practical applications, particularly in fields such as WLEDs, photovoltaics , and X-ray detectors.

研究领域: 材料科学 · 半导体物理 · 光电探测 · 晶体生长 · 光电子学
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