查找使用阿拉丁产品的科研文献

Regulating the Interplay at the Buried Interface for Efficient and Stable Carbon-Based CsPbI2Br Perovskite Solar Cells

Dan Zhang,Xiang Zhang,Tonghui Guo,Junjun Jin,Junjie Zou,Zhenkun Zhu,Yuan Zhou,Qiang Cao,Jing Zhang,Zhiwei Ren,Qidong Tai

Buried interface modification is promising for preparing high-performance perovskite solar cells (PSCs) by improving the film quality and adjusting the interfacial energy level alignment. In this work, multifunctional ethylenediaminetetraacetic acid diammonium (EAD)-modulated ZnO is employed as an effective buried interface to regulate the interplay between SnO2 and CsPbI2Br in carbon-based inorganic PSCs (C-IPSCs). The burying of EAD into the ZnO interlayer not only enhances the photoelectric properties of ZnO by passivating oxygen defects but also adjusts the energy level alignment of the buried interface. More importantly, the perovskite quality is optimized and the buried interface defects are passivated due to the formation of coordination and hydrogen bondings. Benefiting from such a robust and efficient charge transfer configuration, a maximum power conversion efficiency of 14.58% is achieved in the optimized device, which represents the highest performance reported among those of low-temperature CsPbI2Br C-IPSCs. In addition, the unencapsulated device demonstrates better long-term and thermal stability.

Mitigating Open-Circuit-Voltage Loss in CsPbI2Br Perovskite Solar Cells Based on CsAc/SnO2 Hybrid Electron Transport Layer

Sai Yang,Yiran Lu,Xiaolong Wang,Jiahao Tian,Hongcai Yu,Chongan Chen,Haoxuan Guo,Yun Lin,Shulin Chen,Yongbo Yuan,Junhui Ran,Bin Yang

Significant open-circuit-voltage (VOC) loss is present in all-inorganic perovskite solar cells (e.g., based on CsPbI2Br), owing to energy level mismatch between the perovskite layer and charge transport layer. Here, cesium acetate (CsAc) was mixed with tin oxide (SnO2) to form a hybrid electron transport layer that can reduce the energy level mismatch with the CsPbI2Br perovskite layer. Ultraviolet photoelectron spectroscopy characterization suggested that the conduction band of the electron transport layer was elevated from −4.51 eV for the SnO2-only material to −3.64 eV for the CsAc/SnO2 hybrid form. This change due to the introduction of CsAc in the SnO2 layer to tune its conduction band is most likely attributed to the formation of a Cs+–Ac– dipole layer near the top surface of the CsAc/SnO2 hybrid electron transport layer. Additionally, the Cs+ ions in the top surface of the hybrid CsAc/SnO2 electron transport layer play a positive role in facilitating the growth of a follow-up CsPbI2Br perovskite layer with finer grains and a denser morphology. Compared to the SnO2-only electron transport layer-based device, CsPbI2Br solar cells based on CsAc/SnO2 exhibited a significantly improved photovoltaic performance. The VOC was increased from 1.11 V for the SnO2-only device to 1.28 V for the CsAc/SnO2 device, while the power conversion efficiency increased from 10.9% to 14.67%. This work presents a practicable approach through modifying the SnO2 layer with CsAc to significantly reduce the VOC loss by 0.17 V, which paves an important road to develop high-VOC CsPbI2Br perovskite solar cells.

Enhanced efficiency and stability of carbon-based CsPbI2Br perovskite solar cells by introducing metal organic framework-derived Fe3O4@NC interfacial layer

Xiaoyu Yang,Ying Qi,Peng Wei,Qixu Hu,Jian Cheng,Yahong Xie

Carbon-based CsPbI 2 Br perovskite solar cells (C–PSCs) have the advantages of low cost and stable performance, but the poor contact and energy mismatch between the perovskite layer and the carbon electrode lead to low power conversion efficiency (PCE). In this work, uniform spindle-shaped Fe 3 O 4 @NC composites have prepared by calcining Fe-based metal organic framework (Fe-MOF) NH 2 -MIL-88B(Fe), which has synthesized by solvothermal reaction using 2-aminoterephthalic acid as nitrogen and carbon sources. Using Fe 3 O 4 @NC composite and UV-Ozone treated Fe 3 O 4 @NC composite (Fe 3 O 4 @NC UVO) as the interfacial layer between the perovskite layer and the carbon electrode, the devices with a structure of FTO/SnO 2 /CsPbI 2 Br/interfacial layer/Carbon exhibit a maximum PCE of 12.25%, which is about 19.28% higher than that of the pristine device. The improved optoelectronic performance is mainly attributed to more matched energy level, denser interface contact, better carrier separation performance and better conductivity. After 19 days of storage at room temperature and ambient humidity, Fe 3 O 4 @NC UVO device has retained 87% of the initial PCE. This work provides a simple and effective strategy to improve the PCE and stability of carbon-based CsPbI 2 Br PSCs with Fe-MOFs-derived carbon materials .

Antisolvent-Free Heterogenous Nucleation Enabled by Employing 4-Tert-Butyl Pyridine Additive and Two-Step Annealing for Efficient CsPbI2Br Perovskite Solar Cells

Xiaoyu Gu,Chengwei Shan,Xiaowei Xu,Qian Liu,Aung Ko Ko Kyaw

All inorganic perovskite based on CsPbI 2 Br has attracted significant attention due to its relatively thermal stable structure compare to its hybrid counterparts. With a wide bandgap of 1.9 eV and excellent light absorption capability, it has been extensively explored for applications in indoor photovoltaics and as a front absorber in tandem devices. However, the uncontrollable crystallization process during solvent evaporation and thermal annealing leads to both macroscopic defects like cracks and microscopic defects such as voids. In this study, a metastable adduct with lead (II) halides by incorporating 4-tert-butyl pyridine as a volatile Lewis base monodentate ligand in the precursor solution is formed. The strategic preferential decomposition of the adduct during the early-stage low-temperature annealing facilitated the desorption of lead (II) halides, inducing antisolvent-free heterogenous nucleation. This, in turn, promoted crystal growth during subsequent high-temperature annealing, resulting in dense films with low defect density. As a result, a maximum open-circuit voltage of 1.30 V is achieved with the champion power conversion efficiency of 16.5% in CsPbI 2 Br-based perovskite solar cell. The work reveals a new mechanism of using Lewis acid-base adduct to obtain high quality perovskite films other than hindering crystallization in traditional way.

A silazane additive for CsPbI2Br perovskite solar cells

Ruiqi Cao,Yaochang Yue,Hong Zhang,Qian Cheng,Boxin Wang,Shilin Li,Yuan Zhang,Shuhong Li,Huiqiong Zhou

Adding additives into peroskite precursor solution has been proven as a simple and efficient strategy to improve the quality of peroskite films. In this work, we demonstrate an effective additive strategy to improve the quality of all-inorganic perovskite films by adding a novel silazane additive heptamethyldisilazane (HDMS). The power conversion efficiency (PCE) of the optimized devices is enhanced from 14.55% to 15.31% with an open-circuit voltage over 1.26 V due to the higher quality perovskite films with lower trap density after the incorporation of HDMS. More interestingly, the HDMS devices exhibit superior humidity and thermal stability compared with the control ones. This work provides a simple and efficient strategy to enhance the device performance and stability of all-inorganic perovskite solar cells, which could facilitate its commercialization.

CsPbI2Br epitaxial shell for efficient PbS quantum dot solar cells

Rahman Sami Ur,Song Yong-Hui,Ma Zhen-Yu,Tai Xiao-Lin,Zhu Bai-Sheng,Yin Yi-Chen,Feng Li-Zhe,Hao Jing-Ming,Ding Guan-Jie,Song Kuang-Hui,Hu Ya-Lan,Li Tieqiang,Xu Jixian,Yao Hong-Bin

Lead sulfide quantum dots (PbS QDs) are promising candidates for high-performance solar cells due to their tunable bandgaps and low-cost solution processing. However, low carrier mobility and numerous surface defects restrict the performance of the fabricated solar cells. Herein, we report the synthesis of novel PbS-perovskite core-shell QDs to solve the low carrier mobility problem of PbS QDs via a facile hot injection method. CsPbI 2 Br shell enabled strain-free epitaxial growth on the surface of PbS QDs because of 98% lattice match. Our results demonstrate a significant improvement in the photoluminescence and stability of the synthesized PbS-CsPbI 2 Br QDs upon shell formation, attributed to the effective suppression of surface defects by the epitaxial shell of CsPbI 2 Br. As a result, the obtained solar cell based on PbS-CsPbI 2 Br core-shell QD exhibits a power conversion efficiency (PCE) of 8.43%, two times higher than that of pristine PbS QDs. Overall, the construction of PbS-CsPbI 2 Br core-shell structures represent a promising strategy for advancing the performance of PbS QDs-based optoelectronic devices.

Organosilica Nanodots Assisted Stability and Performance Improvements of CsPbI2Br Solar Cell

Ruoshui Li,Chunyan Deng,Yuan Xu,Lin Gao,Fengli Liu,Yu Jing,Jihuai Wu,Zhang Lan

Since the commercialization of perovskite solar cells (PSCs) for deep water, device stability has become critical. Although solar cells based on all-inorganic perovskite are a kind of device with wide application prospects due to the adjustable bandgap of the optical absorption layer material. At present, compared with organic–inorganic hybrid PSCs, there are still more unsolved problems. In this work, we introduce an organosilica nanodot (OSiND) with good electron transport ability as a complement to SnO 2 . By mixing SnO 2 nanocrystals with smaller OSiNDs, a sandstone mixed structure is formed, which promotes carrier extraction and improves the crystal quality of the perovskite layer. Devices with better performance and significantly improved stability are obtained. Through the study on hybrid perovskite and the observation of device aging results under different conditions, it is proven that OSiNDs are of great significance to obtain better quality perovskite.

NaBr-Modified CsPbI2Br Improves the Comprehensive Performance of the Solar Cells

Caidong Xie,Junshuai Li,Yanzhou Wang,Qiulu Chen,Weining Liu,Xincheng Yao,Yujun Fu,Qiming Liu,Qiang Chen,Deyan He,Yali Li

Managing Crystallization of CsPbI2Br Films for High-Performance Indoor and Outdoor Photovoltaics

Qiu Fazheng,Sun Jiayi,Li Qi,Liu Bokai,Wang Hai-Qiao

The all-inorganic CsPbI 2 Br material shows promise for indoor photovoltaics but suffers from a severe open-circuit voltage ( V oc ) deficit under low light due to defect-mediated recombination. Here, we introduce 3,4-thiophenedicarboxylic anhydride (TDA) into the precursor solution to synergistically retard crystallization and passivate defects. Density functional theory and synergistic experiments confirm that TDA strongly coordinates with PbI 2 , outcompeting DMSO and increasing the activation energy for CsPbI 2 Br nucleation. This yields CsPbI 2 Br films with larger grains, enhanced crystallinity, and reduced trap density. Residual TDA molecules can passivate uncoordinated Pb 2+ at grain boundaries, suppressing nonradiative recombination. Using a dopant-free P3HT hole-transport layer, the optimized device achieves a champion power conversion efficiency (PCE) of 17.33% with a remarkable V oc of 1.42 V under standard illumination. Under 1000 lux LED indoor light, the device delivers a PCE of 36.22%. More importantly, TDA-optimized devices can retain 90% of initial efficiency after 1500 h in ambient air and 90% after 1000 h at 85 ° C. This work provides a facile strategy to overcome the V oc deficit and instability of CsPbI 2 Br indoor photovoltaics.

Molecular configuration strategy for high-performance carbon-based CsPbI2Br perovskite solar cells

Cuiping Xu,Xiaofan Sun,Peiqi Ji,Min Zhao,Ziyi Xu,Hong-Ling Cai,Xiaoshan Wu

Molecular configuration strategy is proposed for buried-interface passivation in CsPbI 2 Br solar cells. • The passivation effect is dependent on both donor type and donor-site accessibility. • 1P treatment suppresses non-radiative recombination and improves charge transport. • The carbon-based CsPbI 2 Br solar cells achieves a champion PCE of 14.65%. • Unencapsulated devices PCE retain 89.3% after 2000 h and exhibit suppressed light-induced phase separation. All-inorganic CsPbI 2 Br perovskites are promising for tandem and semitransparent solar cells because of their suitable bandgaps and superior thermal stability. However, the buried-interfacial defects severely limit the efficiency and stability of solar cells. In this work, an efficient molecular configuration design strategy for buried-interfacial defects passivation is proposed. The strategy reveals that the passivation effect is significantly dependent on both donor type and donor-site accessibility of molecules. Based on this design strategy, carbon-based CsPbI 2 Br devices achieve a power conversion efficiency (PCE) of 14.65%, while unencapsulated devices retain 89.3% of their initial efficiency after 2000 h of storage and exhibit suppressed light-induced phase separation. These findings provide guidance for designing efficient interfacial passivators to optimize the efficiency and stability of perovskite solar cells.

Enhanced performance of carbon-based CsPbI2Br perovskite solar cells using interfacial modifiers

Haoju Li,Yuhang Liang,Changzhong Wang,Guangli Liu,Huang Cheng,Raochen Xie,Longxiang Luo,Yannan Qian

Carbon-based CsPbI2Br perovskite solar cells (C-PSCs) have attracted significant attention as promising candidates for solar energy conversion due to their optimal bandgap, stability, and ease of fabrication. However, surface and grain boundary defects in CsPbI2Br contribute to significant non-radiative recombination and energy loss, while the energy level mismatch between the carbon electrode and CsPbI2Br exacerbates open-circuit voltage (Voc) loss, limiting photovoltaic performance. To address these challenges, 3-(trifluoromethyl)phenylthiourea (3-TPT) and 4-(trifluoromethyl)phenylthiourea (4-TPT) were introduced as interfacial modifiers. The functional groups in 3-TPT and 4-TPT, including CS, –CF3, and –NH2, effectively passivated cationic and anionic defects, reducing defect density and suppressing non-radiative recombination. Additionally, isopropyl alcohol (IPA) solutions of 3-TPT and 4-TPT promoted secondary crystallization and grain reorganization, resulting in larger grains and denser boundaries, which significantly enhanced the CsPbI2Br crystal quality. Furthermore, 3-TPT and 4-TPT modulated the band structure of CsPbI2Br, improving the energy level alignment with the carbon electrode and minimizing energy loss. The power conversion efficiencies (PCEs) of C-PSCs modified with 3-TPT and 4-TPT reached 13.78% and 14.15%, respectively, compared to 12.18% for the unmodified device. The –CF3 groups in 3-TPT and 4-TPT enhanced the hydrophobicity of CsPbI2Br, effectively mitigating moisture ingress. After 500 h in a humid environment (30% relative humidity), the modified devices retained 81.8% and 85.7% of their initial PCE, significantly outperforming the 50.6% retention of the unmodified device. This study demonstrates a simple and effective approach to improving both the efficiency and long-term stability of carbon-based CsPbI2Br solar cells.

Microregion Characterization of Grain Boundary Defects and Electron Capture of CsPbI2Br Perovskite

Linkai Yu,Le Zhang,Chuwu Xing,Jing Yang,Shuai Huang,Qinghui Bao,Duofa Wang,Tianjin Zhang

All-inorganic CsPbI 2 Br perovskite solar cell shows superior thermal stability, but the power conversion efficiency falls behind organic devices, due to the existence of abundant defects. Halogen and metal ions at the grain boundaries induce the formation of defect states, which increases the probability of carrier recombination. Grain boundaries are also the channels of ion migration. Herein, as relatively simple interface engineering strategy is used at the molecular level, using a multifunctional 2,5-thiophene dicarboxylic acid to passivate the interface between the perovskite surface and the carbon electrode. The 2,5-thiophene dicarboxylic acid can effectively coordinate the undercoordinated Pb 2+ , reduce the defect concentration of perovskite, and suppress the nonradiative recombination. The device with carbon electrode exhibits a power conversion efficiency of 13.4%. The microscopic passivation mechanism is investigated by Kelvin probe force microscopy. It is observed that the surface treatment effectively passivates the defects at the grain boundary and reduces the capture rate of photogenerated carriers of the grain boundary.