APPLIED CATALYSIS B-ENVIRONMENTAL
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2025
·
IF 21.1
Xuewei Hao,Jiaming Wu,Xintong Cai,Keyan Li,Chunshan Song,Xinwen Guo
The development of photocatalysts for efficient CO 2 conversion to chemicals especially C 2+ products remains a challenge. In this work, Ag nanoparticles (NPs) decorated GaN photocatalysts were synthesized by in-situ nitridation of Ga 2 O 3 combined with chemical deposition of Ag. The photocatalytic performance of Ag/GaN photocatalysts was optimized by tuning the loading amount and ripening time of Ag NPs, among which 0.3Ag/GaN exhibited best photocatalytic CO 2 reduction performance. The production rates of CO and CH 4 reached 421 and 80 μmol g −1 h −1 , respectively, and especially, it also produced C 2 H 6 with a production rate of 79 μmol g −1 h −1 . The introduction of Ag NPs not only significantly promotes visible light absorption as well as charge generation and separation, but also elevates surface temperature of the photocatalyst due to photothermal effect, resulting from localized surface plasmon resonance (LSPR) effect of Ag NPs. Moreover, the addition of Ag NPs enhances the adsorption of both CO 2 and the *CO intermediate, facilitating the CO 2 activation and subsequent C−C coupling process. This study provides new ideas for the design and preparation of photocatalysts capable of converting CO 2 into value-added chemicals.
研究领域:
材料科学
·
催化化学
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DOI
高影响因子
Materials Today Chemistry
·
2023
·
IF 7.3
Haijiang Qiu,Jianing Wu,Min Li,Zhenyu Hu,Song Yang,Yanyan Li,Yingying Gu,Hongrui Cheng,Yuanhui Zheng
Gallium nitride quantum dots (GaN QDs), as a third-generation semiconductor material, are usually synthesized through a vapor deposition method at an elevated temperature (typically ≥800 °C). Thermal injection method is rarely reported for the synthesis of GaN QDs due to the lack of active precursors and the require of harsh reaction conditions. Here, we report the fabrication of oxygen doped colloidal GaN QDs via rapid thermal injection. By screening the reaction temperature and solvent, well-dispersed GaN QDs with a size of 3.8 nm were obtained in octadecylamine (ODA) at 360 °C. The synthesized GaN QDs show blue emission, the maximum emission wavelength is about 440 nm, and the photoluminescence quantum yield is 14.3%. Furthermore, we reveal the donor-acceptor mechanism of blue emission from GaN QDs. During the growth of GaN QDs, oxygen atoms occupy some nitrogen sites and produce a shallow oxygen donor energy level (O N ). A part of the O N can be combined with the adjacent gallium vacancy (V Ga ) to form a V Ga -O N acceptor, whose energy level is about 0.98 eV above the valence band of GaN QDs. The transition of excited electrons from the donor (O N ) to the acceptor (V Ga -O N ) is responsible for the blue emission of GaN QDs.
研究领域:
材料科学
·
光学
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DOI
高影响因子
Nanoscale
·
2020
·Vol. 12
·期 48
·24429-24436
·
IF 6.895
Dan Han,Qingming Liu,Qiang Zhang,Jianlong Ji,Shengbo Sang,Bingshe Xu
Black phosphorus (BP) has recently garnered significant attention due to its specific physical properties. At present, high-quality few-layer and thin-film BP is obtained principally by mechanical exfoliation, restricting its device applications in the future. Here, a facile, direct synthesis of highly crystalline thin-film BP on GaN(001) substrates is achieved by conversion of red phosphorus to BP under atmospheric pressure. The synthesized ≈100–500 nm thick BP thin films with a length ranging from 4 to 15 μm can maintain long-term stability with no sign of oxidation after 5 months of exposure to ambient conditions, as indicated by energy dispersive spectroscopy (EDS). Cross-sectional spherical aberration correction transmission electron microscopy (STEM) analysis of the entire thin-film BP sample did not show any aggregation nucleation through the selected sample. The interface of the BP/GaN heterostructure is atomically sharp, which is very critical for high-performance device fabrication using a direct step in the future. And it is worth noting that there are fluctuations of a few atoms on the surface of GaN. Moreover, using first-principles approaches, here we establish a novel kinetic pathway for fabricating thin-film BP via epitaxial growth. The step of fluctuations with a few atoms on the GaN surface are first preferentially covered by P adatoms, then P adatoms cover the remaining part. Once formed, such a structure of thin-film BP is stable, as tested using EDS and STEM. Combining the results of the experiment and simulation, it can be revealed that the P adatom on undulatory GaN is sufficiently mobile and the undulating surface of GaN plays a major role in forming high-quality thin-films of BP. The preferentially covered nearby step growth mechanism discovered here may enable the mass production of high-quality thin-film BP, and could also be instrumental in achieving the epitaxial growth of thin-film BP on GaN and other 2D materials.
研究领域:
材料科学
·
凝聚态物理
·
纳米技术
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半导体器件
·
二维材料
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DOI
高影响因子
CRYSTENGCOMM
·
2025
·Vol. 27
·期 36
·6048-6055
·
IF 2.6
Xiangrong Li,Mengzhou Wu,Yanling Wang,Wentao Qu,Guoqiang Li
Among various semiconductors evaluated for photoelectrochemical (PEC) water splitting, gallium nitride (GaN) has emerged as a promising photoelectrode material due to its wide, direct bandgap, which allows for more efficient sunlight utilization. To address the issue of severe surface states that hinder its performance, graphitic carbon nitride (g-C3N4) was introduced as a passivation layer. The resulting GaN/g-C3N4 heterojunction demonstrates a significant enhancement in PEC performance compared to pristine GaN nanorods (NRs), including a notable increase in photocurrent density. Importantly, this heterostructure is also capable of driving PEC water splitting under zero external bias, which is primarily attributed to the efficient charge separation and transfer enabled by the Z-scheme mechanism. Overall, this study offers a novel strategy for passivating surface states in nanomaterials and underscores the promising role of g-C3N4 in PEC water splitting applications.
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高影响因子
ACS Photonics
·
2025
·
IF 6.7
Weidong Song,Jun Wei,Junxing Lv,Huimin Duan,Hainan Qin,Jiaquan Li,Weijia Yang,Bingqian Li,Shuti Li
Spectrally selective photodetectors (SSPDs) are crucial components in diverse fields, such as telecommunications, environmental surveillance, and medical diagnostics. Typically, these devices rely on external optical filters to selectively detect light within a narrow spectral band. While this scheme is effective, it adds complexity to the system architecture and raises manufacturing costs, which can also potentially lead to a decrease in sensitivity. Alternatively, the formation of heterojunctions between conductive filters and semiconductors can develop SSPDs that not only possess simplified architecture but also exhibit inherent self-filtering capabilities. In this work, we introduce an amorphous WO3/GaN heterojunction ultraviolet SSPD that exhibits a distinct detection peak at 370 nm, with a full width at half-maximum of less than 20 nm. The WO3 thin films were deposited photochemically under ultraviolet light by using a metal chloride precursor. The SSPD offers excellent photodetection performance, with a high photo-to-dark current ratio of 6.19 × 104, a high responsivity of 495 mA/W, and an excellent specific detectivity of up to 3.31 × 1011 Jones at −5 V, all of which are significantly improved compared to the crystalline WO3/GaN device. Additionally, our SSPD shows promise for selective imaging applications within the near-UV spectrum.
研究领域:
材料科学
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光电子学
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DOI
高影响因子
Nanoscience and Nanotechnology Letters
·
2018
·Vol. 10
·期 3
·329-336
·
IF 2.917
Tong Xinru,Zhao Zhuo,Wu Junsheng,Zhou Yanwen,Kelly Peter,Gao Peng
The formation of GaN/graphene hybrid films through the vacuum thermal evaporation of GaN on a double layer flexible substrate consisting of a graphene layer on PET, has been studied. The thicknesses of the GaN layers and, therefore, the structure and properties of the hybrid films,
were critically influenced by the deposition time. The structure of the GaN layer on graphene was amorphous, according to small angle X-ray diffraction spectra. The existence of the GaN layer on top of the graphene and the absence of a N–C covalent bond at the interface of the GaN/graphene
hybrid film was confirmed by using Fourier transform infrared spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. The free π-electrons of graphene took the conductive role in the hybrid films. A slight change in electrical properties was observed with increasing
thickness of the GaN layer, due to the shunt resistance between this layer and the graphene layer. The grain size of the GaN films increased and transmittance within the visible range decreased with increasing deposition time, i.e., increasing thickness. The method presented demonstrates the
feasibility of realizing transparent conductive GaN/graphene hybrid films on flexible PET, which are in high demand for fabricating optoelectronic and sensing devices.
研究领域:
材料科学
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纳米技术
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光电子学
·
薄膜沉积
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DOI
高影响因子
APPLIED OPTICS
·
2025
·Vol. 64
·期 10
·2554-2560
·
IF 1.7
Xiaodong Zhang,Kang Xiang,Muyang Ye,Shuang Gao,Xiujuan Wang
Ultraviolet photodetectors (UV-PDs) with high sensitivity and fast optical response have become an important part of modern optoelectronic information transmission and communication systems. In this paper, a high-performance self-powered titanium carbide (${{\rm Ti}_{3}}{\rm C_2}{\rm T_x}$)/gallium nitride (GaN) Schottky UV-PD with an interdigitated electrode was developed. A Schottky-contacted ${{\rm Ti}_{3}}{\rm C_2}{\rm T_x}$ interdigitated electrode was successfully fabricated on GaN substrates using a spray coating method. The as-prepared ${{\rm Ti}_{3}}{\rm C_2}{\rm T_x}/{\rm GaN}$ UV-PD exhibits excellent optoelectronic properties. Under zero bias and weak UV illumination (${48}\;\unicode{x00B5} {{\rm W/cm}^{2}}$), the device demonstrates an ultra-low dark current (${2.818} \times {{10}^{- {10}}}\;{\rm A}$) and a fast response speed (${{\rm t}_{\rm r}} = {170}\;\unicode{x00B5} {{\rm s/t}_{\rm f}} = {210}\;\unicode{x00B5} {\rm s}$); the responsivity and detectivity could reach 120.78 mA/W and ${1.272} \times {{10}^{{12}}}$ Jones, respectively. Furthermore, to demonstrate the feasibility of practical application, the device was applied in a UV point-of-view imaging system and high-quality images were successfully obtained under low-light conditions. This work presents an effective approach in developing high-performance UV-PDs for optical imaging applications.
研究领域:
材料科学
·
光电技术
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DOI
PubMed
高影响因子
IEEE TRANSACTIONS ON ELECTRON DEVICES
·
2026
·
IF 3.6
Jiaqi Lu,Shan Li,Xiwu Huang,Chi Gao,Xueqiang Ji,Lili Yang,Libin Guo,Zeng Liu,Weihua Tang
Self-powered ultraviolet photodetectors (UVPDs) based on low-cost and high-efficiency hybrid heterojunctions hold great potential for next-generation optoelectronics because their strong built-in electric fields enable rapid carrier separation without external bias. However, simultaneously achieving high responsivity and fast response remains a persistent challenge. In this work, a high-performance self-powered UVPD is realized by introducing silver nanowires (AgNWs) into the PEDOT:PSS layer to form a GaN/PEDOT:PSS-Ag nanowires (AgNWs) hybrid heterojunction. Compared with the pristine GaN/PEDOT:PSS device, the AgNWs-modified PD exhibits a 40% enhancement in self-powered photodetection performance. Under 365-nm illumination, the device delivers a great responsivity of 1.4 A/W, a superior detectivity of $1\times 10^{{13}}$ Jones, and a notable external quantum efficiency as high as 476%. The response speed is also markedly boosted, with the rise and decay times shortened to 52.9 and 84.3 ms, representing reductions of 59% and 73%, respectively. Detailed analysis reveals that the incorporated AgNWs increase the electrical conductivity of the PEDOT:PSS layer and construct highly efficient carrier-transport channels that accelerate carrier transfer, thereby promoting multiple exciton generation (MEG) effect. These findings provide a feasible strategy for improving the self-powered photodetection performance of organic–inorganic hybrid heterojunction UVPDs.
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DOI
高影响因子
MICROCHEMICAL JOURNAL
·
2025
·
IF 5.1
Yuanchao Xie,Yang Liu,Hongtao Wang,Dan Han,Jianan Ma,Shengbo Sang
In this work, a composite of GaN with (FeMnNiCoCr) 3 O 4 was designed, and a chemiresistive gas sensor based on this composite material was constructed for NH 3 detection at room temperature. The (FeMnNiCoCr) 3 O 4 modification caused the collapse of GaN morphology and formed a more porous nanostructure, promoting the gas diffusion and adsorption process. The inherent high configurational entropy and lattice adaptation capabilities of (FeMnNiCoCr) 3 O 4 effectively address the deficiency of O V in GaN intrinsic defects through entropy-driven interfacial stabilization and dynamic lattice matching mechanisms. The fabricated gas sensor exhibited improved sensitivity, lower detection limit (100 ppb), fast response/recovery (19/66 s) and good stability compared with pure GaN at room temperature. This work provides a novel strategy for oxygen vacancy regulation and an alternative scheme for the development of ppb-level NH 3 sensors.
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高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
·
2023
·
IF 8.4
Dan Han,Yi Chen,Donghui Li,Jiexu Shi,Hongtao Wang,Xiuli He,Li Zhao,Weidong Wang,Shengbo Sang,Jianlong Ji
Surface modification with noble metal is considered as an effective strategy to enhance sensing performance of semiconductor gas sensors. In this work, gold nanoparticles (Au NPs) decorated Gallium Nitride nanoflowers (Au-GaN NFs) have been synthesized successfully by a feasible hydrothermal method combined with high temperature nitridation and followed by in-situ reduction process. The characterizations of the structure and morphology of as-obtained Au-GaN NFs indicated that the Au NPs were successfully loaded on the surface of GaN. The excellent gas sensing performance was observed for GaN of 2 mol% Au loaded, including the high response (86.8 %) to 100 ppm NH 3 with fast response/recovery time (41 s/169 s) at room temperature , low theoretical limit of detection (72 ppb), good stability and selectivity. Besides, the influence of humidity on the performance of sensors was explored, where the response can be reached 56.5 % towards 100 ppm NH 3 under 70 % RH. The improvement of the sensing performance of Au-GaN NFs sensor can be attributed to the combined action of chemical and electronic sensitization of Au NPs. This work provides a candidate of Au-GaN NFs for the development of wireless sensing system in NH 3 monitoring.
研究领域:
材料科学
·
传感器技术
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DOI
高影响因子
RSC Advances
·
2019
·Vol. 9
·期 27
·15341-15349
·
IF 3.049
Zhiqi Gu,Jin Wang,Bin Miao,Lei Zhao,Xinsheng Liu,Dongmin Wu,Jiadong Li
In this paper, we propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor (HEMT), where ethanolamine (EA) was utilized to functionalize the surface of GaN and provided amphoteric amine groups for probe molecular immobilization for bioassay application. The molecular gated-AlGaN/GaN HEMT was utilized for pH and prostate-specific antigen (PSA) detection to verify its performance as a biosensor. Benefitting from the high coating quality on the GaN surface, the performance of our biosensor is drastically improved compared to other AlGaN/GaN HEMT based pH and PSA biosensors reported before. Our molecular gated-AlGaN/GaN HEMT biosensor has achieved good static electrical performance for pH sensing, such as high sensitivity, good linearity and chemical stability. Moreover, after further immobilization of PSA antibody onto the EA aminated GaN surface, the limit of detection (LOD) for PSA detection is as low as 1 fg mL−1 in PBS buffer, which has reached an at least two orders of magnitude decrease compared to any other AlGaN/GaN HEMT based PSA biosensor reported before. And the sensitivity of our PSA biosensor has achieved a substantial increase, reaching up to 2.04% for 100 ng mL−1. The measurements of pH and PSA utilizing the EA modified AlGaN/GaN HEMT biosensor indicate that the surface modification strategy on the GaN proposed in this paper can effectively improve the performance of the AlGaN/GaN HEMT based biosensor, which demonstrates a promising application prospect in the AlGaN/GaN HEMT based biological detection field.
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PubMed
高影响因子
Advanced Optical Materials
·
2023
·
IF 9
Jianli Sun,Wangqi Mao,Chuansheng Xia,Weian Wang,Qiannan Cui,Zengliang Shi,Gangyi Zhu,Mingliang Wang,Chunxiang Xu
A signal amplification strategy is always required to improve sensing performance, especially for mass-prepared, miniature and highly sensitive testing equipment. Herein, an on-chip integrated biosensor combining microcavity lasing and surface enhanced Raman scattering (SERS) for label-free biochemical analysis is developed. The gallium nitride (GaN) microrings array is fabricated as a whispering gallery mode microlaser based on totally internal wall reflection, and gold nanoparticles (AuNPs) are further assembled on the cavity surface to confine the optical field synergistically. The improvement of lasing capability indicates the strong light-matter interaction that is conducive to superior response of biomolecules. As a functional example, a GaN/AuNPs substrate is employed in a urine assay, which avoids the shortcomings of requiring specific reactive reagents on different display modules. Ultimately, the chip not only realizes a wide range of pH (3.6–7.8) identification depending on the ultra-sensitivity feedback of lasing to the refractive index of liquids, but also significantly enhances SERS signals to enable real-time determination of the biomolecules in human urine. Even the lowest levels of creatinine (0.02%) can be quantitatively detected in less than a minute; thus this work with dual-mode spectral analyses realizes rapid diagnosis for urinary systems, as well as provides a more accurate reference for the screening of other diseases.
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高影响因子
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