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INORGANIC CHEMISTRY · 2025 · IF 4.7

Morphology Control of Green InP/ZnSe/ZnS Quantum Dots and Application in X-ray Imaging

Fan Shi,Shuangyi Yuan,Ranran Hu,Hang Xiao,Shaolu Zhang,Chenyang Wang,Xiangtong Zhang,Huaibin Shen

Indium phosphide (InP)-based quantum dots (QDs) have emerged as a promising alternative to cadmium-containing QDs for photonic applications. Nonetheless, the evolution of the synthesis chemistry for InP-based QDs poses a significant challenge, particularly with regard to morphological control. This study demonstrates efficient morphological control of square and spherical green-emissive InP/ZnSe/ZnS QDs. The formation of square-shaped QDs is attributed to the fluoride-induced suppression of {111} facet growth, which promotes shell growth along the {100} facets. Conversely, spherical QDs emerge owing to weak suppression of {111} facet growth. The fluoride is derived from the reaction between ZnF2 powder and oleic acid. It has been demonstrated that coordination between TOP and oleic acid effectively impedes this reaction. Beyond photoluminescence, the QDs exhibit strong and narrow radioluminescence (RL) at 565 nm with a full width at half maximum (FWHM) of 42 nm under X-ray excitation with a light yield of 4.2 × 103 photons/MeV. A QD X-ray imaging film was demonstrated to successfully visualize the internal components of opaque objects. This work demonstrates a ligand-mediated strategy for the morphological control of InP-based QDs and highlights their potential for X-ray imaging.

CAS / MDL: 7783-49-5
研究领域: 纳米材料 · 量子点 · X射线成像 · 合成化学 · 光电子学
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JOURNAL OF LUMINESCENCE · 2019 · IF 2.961

Color-tunable optical properties of cadmium-free transition metal ions doped InP/ZnS quantum dots

Shiliang Mei,Xian Wei,Dan Yang,Danlu Su,Wu Yang,Guilin Zhang,Zhe Hu,BoBo Yang,Hanqing Dai,Fengxian Xie,Wanlu Zhang,Ruiqian Guo

Cadmium-free InP quantum dots (QDs) exhibit many unique optical properties , and show great promise as light emitting materials. In this work, a series of high-efficient and color-tunable transition metal ions (Cu, Mn) single- and co-doped InP/ZnS QDs with the average size of 3.2–3.7 nm, were firstly prepared via a nucleation-doping method in an organic synthetic route. These three kinds of doped InP/ZnS QDs all exhibit dual emission with one peak position around green region owing to the intrinsic state and the other peak position around orange-red region resulted from dopant emission, the relative intensity of which can be effectively tuned by varying Cu or Mn dopant concentration. The dopant emission of Cu doped InP/ZnS QDs from 572 to 696 nm can be realized via increasing Cu dopant concertration from 0.25% to 10%, while the peak position of dopant emission in Mn doped InP/ZnS QDs system remains unaltered as Mn dopant concentration increasing. Besides, the interaction mechanism of Cu and Mn dopant in co-doped InP/ZnS QDs system was investigated with steady-state and time-resolved PL spectroscopy measurements. The results reveal that the dopant emission is dominated by Cu doping rather than Mn doping. These unique results in doped InP/ZnS QDs would help to understand the fundamental aspects of doping, and the dual-emissive and color-tunable optical properties of single-phase doped InP/ZnS QDs will endow them with great promise as color-converting materials for use in solid-state lighting.

研究领域: 材料科学 · 光学
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OPTICS EXPRESS · 2023 ·Vol. 31 ·期 25 ·42400-42412 · IF 3.8

Spatiotemporal mode-locking of an all-fiber laser based on InP quantum dot saturable absorber

Yajun Lou,Boyuan Ge,Yue Cai,Xinhai Zhang

Passive mode-locking based on saturable absorbers (SAs) is an effective way to generate ultrafast pulses, while the spatiotemporal mode-locking (STML) based on SAs are rarely studied. We construct an all-fiber laser with InP quantum dots (QDs) SA, and realize multi-mode Q-switching (MMQS) and STML. In addition, by adjusting the polarization controller (PC) in the laser cavity, we obtain two different single-pulse STML states. The narrowest pulse widths of the two states are 57 ps and 32 ps, respectively, and the pulse width can be tuned continuously with increasing the pump power. By decoupling the effects of the PC and the SA in our experiment, we find that the polarization plays a key role in the selection of transverse modes. The effect of independent polarization on spatiotemporal mode-locked pulses has not been investigated before. To further analyze and understand the experimental results, we numerically solve the nonlinear Schrodinger equation, and compare the numerical simulation with the experimental results. In addition to passively adjusting cavity loss, the InP QD SA can balance the large walk off between different transverse modes, due to the spatial and spectral filtering effects. Our work has important implications for the design and application of all-fiber STML lasers.

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CHEMICAL ENGINEERING SCIENCE · 2025 · IF 4.3

Tetrachromic InP/ZnS quantum dots-based fluorescent sensor arrays for accurate discrimination of multiplex metal ions

Jianan Huang,Xianlin He,Ruqi Zhang,Zixuan Ding,Yanting Song,Haimei Yang

Accurate identification of multiple teas based on the difference in their contents and species of metal ions is vital in food inspection and public health. However, achieving accurate sensing from one material with various transduction signals and excellent anti-interference remains a challenge. Herein, a four-channel sensing platform was constructed by combining with four water-soluble InP/ZnS QDs with independent emission. The fluorescence intensities of the four water-soluble InP/ZnS QDs change in different degrees owing to the synergistic coordinative effect between metal ions and ligands. Interestingly, the multi-channel sensing platform allows the qualitative performance of metal ions with excellent anti-interference, high sensitivity, and high accuracy in binary and ternary mixtures. Moreover, the multi-channel fluorescent array exhibited a universality-powerful capability for identifying five teas with satisfactory results. The universal application for detecting Cr 6+ , Hg 2+ , and Cu 2+ in various tea drinks was demonstrated with excellent recovery, indicating a promising potential application in food safety.

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Advanced Optical Materials · 2025 · IF 7.2

Controllable Nucleation and Growth of Blue InP Quantum Dots Enable Efficient and Bright Light-Emitting Diodes

Wei Wang,Shizheng Zhang,Sitao Huo,Fan Cao,Sheng Wang,Qianqian Wu,Rui Li,Xuyong Yang

Indium phosphide (InP) quantum dots (QDs) have emerged as eco-friendly substitutes for cadmium (Cd)-based QDs. However, their electroluminescence (EL) performance, especially for blue ones, lags significantly behind that of the state-of-the-art Cd-based counterparts. This disparity can be attributed to the abundant defect states arising from their high surface area/volume ratio and irregular size distribution caused by high-reactivity phosphorus (P) precursor. Herein, trimethylgermanium chloride is developed into the P precursor, effectively modulating the nucleation reaction rate and drastically reducing phosphorus oxide defects. Furthermore, the epitaxial growth of the ZnS layer is successfully achieved employing zinc diethyldithiocarbamate as the precursors. This approach not only facilitates superior crystallinity in QDs at lower temperatures but also effectively suppresses electron diffusion to the shell, thereby alleviating the persistent redshift and ensuring the peak position remains within the blue emissive range. Consequently, the synthesized blue InP/ZnS QDs demonstrate a PLQY of 73% at 474 nm, empowering them to exhibit exceptional EL performance with a peak external quantum efficiency of 2.38% and a record luminance of 2693 cd cm −2 .

研究领域: 材料科学 · 纳米技术 · 光学工程
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Nanoscale Research Letters · 2018 ·Vol. 13 ·期 1 ·1-7 · IF 3.125

Dual-Emissive and Color-Tunable Mn-Doped InP/ZnS Quantum Dots via a Growth-Doping Method

Zhang Guilin,Mei Shiliang,Wei Xian,Wei Chang,Yang Wu,Zhu Jiatao,Zhang Wanglu,Guo Ruiqian

In this letter, dual-emissive and color-tunable Mn-doped InP/ZnS quantum dots (Mn:InP/ZnS QDs) with the absolute photoluminescence quantum yield (PL QY) up to 78% were successfully synthesized via a growth-doping method. The dual emission of Mn:InP/ZnS QDs is composed of intrinsic emission and Mn-doped emission, which can be tuned by different Mn/In ratios. With the increase of Mn dopant concentration, the intrinsic emission shows a red shift from 485 to 524 nm. The new class of dual-emissive QDs provides potential for future application in white LED.

研究领域: 材料科学 · 纳米技术
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Advanced Optical Materials · 2022 ·Vol. 11 ·期 3 ·2201939 · IF 10.05

InP/ZnSeS/ZnS Core–Shell Quantum Dots as Novel Saturable Absorbers in Mode-Locked Fiber Lasers

Yajun Lou,Pengfei He,Boyuan Ge,Xijian Duan,Lei Hu,Xiaoli Zhang,Lili Tao,Xinhai Zhang

In this study, red light emitting InP/ZnSeS/ZnS quantum dots (QDs) are prepared by thermal injection method. The results show that the InP/ZnSeS/ZnS QDs saturable absorbers (SA) have good nonlinear saturable absorption properties with modulation depth of 24.2% and saturation intensity of 0.08 KW cm −2 . Then the QD SAs are applied to the erbium-doped fiber laser (EDFL) ring cavity system, and a mode-locked laser pulse with a pulse width of 635 fs is generated. In addition, the pulse width is determined by the carrier recovery time, which is closely related to the defect density in the material. A large number of defects are eliminated in the QDs by hydrogen fluoride (HF) treatment, and the pulse width is reduced from 635 to 450 fs. Results of time-resolved photoluminescence and ultrafast transient absorption spectroscopy (TAS) show that HF treatment indeed reduces defects in InP/ZnSeS/ZnS QDs, indicated by the decrease of the carrier recovery time. This is different from the reported 2D SA materials, which usually reduce the carrier recovery time by increasing the defect density. This study will inspire new applications of QDs in ultrafast photonics and nonlinear optics.

研究领域: 光学 · 材料科学 · 激光技术
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Nanoscale · 2023 ·Vol. 15 ·期 46 ·18920-18927 · IF 6.7

Suppressed Auger recombination and enhanced emission of InP/ZnSe/ZnS quantum dots through inner shell manipulation

Yaru Chen,Rixin Wang,Yanmin Kuang,Yangyang Bian,Fei Chen,Huaibin Shen,Zhen Chi,Xia Ran,Lijun Guo

Understanding the influence of the inner shell on fluorescence blinking and exciton dynamics is essential to promote the optical performances of InP-based quantum dots (QDs). Here, the fluorescence blinking, exciton dynamics, second-order correlation function g2(τ), and ultrafast carrier dynamics of InP/ZnSe/ZnS QDs regulated by the inner ZnSe shell thickness varying from 2 to 7 monolayers (MLs) were systematically investigated. With an inner ZnSe shell thickness of 5 MLs, the photoluminescence quantum yield (PL QY) can reach 98% due to the suppressed blinking and increased probability of multiphoton emission. The exciton dynamics of InP/ZnSe/ZnS QDs with different inner shells indicates that two decay components of neural excitons and charged trions are competitive to affect the photon emission behavior. The probability density distributions of the ON and OFF state duration in the blinking traces demonstrate an effective manipulation of the inner ZnSe shell in the non-radiative processes via defect passivation. Accordingly, the radiative recombination dominates the exciton deactivation and the non-radiative Auger recombination rate is remarkably reduced, leading to a QY close to unity and a high PL stability for InP/ZnSe/ZnS QDs with 5 MLs of the ZnSe shell. These results provide insights into the photophysical mechanism of InP-based QDs and are significant for developing novel semiconductor PL core/shell QDs.

CAS / MDL: 8042-47-5
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JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY · 2024 · IF 11.2

Efficient and environmentally friendly white light-emitting diodes with InP-based quantum dots embedded in mesoporous silica

Zhongjie Cui,Shuaitao Qin,Haiyang He,Jinchan Zhao,Rui Jiang,Yifeng Xing,Shiliang Mei,Wanlu Zhang,Ruiqian Guo

As one of the promising next-generation light conversion materials, indium phosphide quantum dots (InP QDs) deserve much attention due to their great optical performances and environmentally friendly properties in particular. Herein, InP-based QDs are embedded into mesoporous SBA-15 and solid QDs/SBA-15 composites are prepared, which exhibit 1.5 times higher photoluminescence quantum yield (PLQY) and narrower full width of half maximum (FWHM) than traditional QDs powder thanks to the reduction of light reabsorption and the optical waveguide effect of mesoporous structure. These advantages contribute to the performance enhancement of light-emitting diodes (LEDs). The luminous efficacy of the LED with green QDs/SBA-15 is 99.49 lm/W, which is higher than that of QDs powder (66.14 lm/W). In addition, the white LED fabricated with green and red InP-based QDs/SBA-15 shows luminous efficacy of 61.38 lm/W. More importantly, the luminous efficacy of the white LED is improved to 129.62 lm/W when using the K 2 SiF 6 :Mn 4+ instead of red InP-based QDs/SBA-15, because the K 2 SiF 6 :Mn 4+ does not absorb the emission from green InP-based QDs/SBA-15. This value is higher than those white LEDs with InP-based QDs reported previously. It is believed that this study demonstrates the promising potential of InP-based QDs for optoelectronic applications.

研究领域: 材料科学 · 光学工程 · 纳米技术
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ACS Applied Nano Materials · 2022 · IF 6.14

Blue-Emitting InP/GaP/ZnS Quantum Dots with Enhanced Stability by Siloxane Capping: Implication for Electroluminescent Devices

Cong Shen,Yanqing Zhu,Hong Tao,Jingling Li,Jianhua Zou,Lei Wang,Jingqiu Liang,Xiudi Xiao,Xueqing Xu,Gang Xu

InP quantum dots (QDs) with low toxicity are an ideal alternative to Cd-based QDs. However, the optical properties and stability of blue-emitting InP QDs are far inferior to those of red and green QDs. In this work, we report the synthesis of highly fluorescent InP/GaP/ZnS core/shell/shell QDs with an emission wavelength of 484 nm and photoluminescence quantum yield of 71%, along with a full width at half-maximum as narrow as 45 nm. In addition, we encapsulated the QDs with siloxane via specific ligand exchange and condensation reactions to improve their stability. The corresponding siloxane capping QD light-emitting device (QLED) shows a maximum luminance of 690 Cd m–2, an external quantum efficiency of 0.09%, and a much longer lifetime than pristine QDs. As a result, these enable the siloxane capping QDs to achieve a much stronger storage stability and a longer QLED lifetime than pristine QDs.

研究领域: 材料科学 · 光学工程
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INORGANIC CHEMISTRY · 2025 · IF 4.7

Green InP Quantum Dots with High Brightness and Narrow Emission through Layer-by-Layer Modification with Aluminum

Jin-Zhao Huang,Meng-Xin Li,Kai-Zheng Song,Wan-Ying Yao,Feng-Lei Jiang

InP quantum dots (QDs) show a unique promise for display and lighting applications. However, the synthesis of InP QDs with high optical quality is much more difficult compared to that of Cd-based QDs and Pb-based perovskites. Here, we established a layer-by-layer modification approach to improve the optical properties of the InP QDs. InP QDs with green emission were prepared using tris(dimethylamino)phosphine ((DMA)3P). By introducing aluminum isopropoxide (AIP) twice during the formation of the ZnSeS and ZnS shell layers, we increased the photoluminescence quantum yield (PLQY) of the resulting Al-modified InP/ZnSeS/ZnS QDs to 96%. The full-width-at-half-maximum (fwhm) could be narrowed to 37 nm. It was speculated that the introduction of Al could alleviate the charge mismatch between the cores and shells and passivate surface defects. In addition, AIP might form oxides on the outer layers of QDs, thus enhancing their stability. Moreover, the green light-emitting diode (LED) based on Al-modified InP/ZnSeS/ZnS QDs performed well with a maximum power efficiency of 28 lm/W. This work finds a way to obtain InP QDs of high brightness and narrow emission by modification in the midsynthetic process, which will inspire the synthesis of better InP QDs.

研究领域: 材料科学 · 光学工程
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CHEMICAL ENGINEERING JOURNAL · 2025 · IF 13.2

Direct synthesis of highly efficient NIR-I emitting core-only InP quantum dots via multi-ligand synergy

Rui Jiang,Jie Zhao,Yifei Qiao,Bo Tan,Jialin Yin,Zhenyu Dai,Shiliang Mei,Wanlu Zhang,Ruiqian Guo

Near-infrared (NIR) emission has garnered significant attention owing to its broad application potential in next-generation optoelectronics. Among various candidates, indium phosphide (InP) quantum dots (QDs) have emerged as particularly promising candidate due to their environmentally benign composition and relatively facile synthesis. However, the synthesis of NIR-emitting InP-based QDs exhibiting high luminescence efficiency remains a critical challenge. The inherent difficulties primarily stem from insufficient core nucleation and the complex shell growth processes essential for achieving high-performance QDs. Herein, we report an expeditious synthetic strategy for achieving NIR-I emissive core-only InP QDs with tunable emission ranging from 683 to 742 nm, mediated by the synergistic effect of ZnCl 2 and NH 4 PF 6 . Under the competitive adsorption between ZnCl 2 and NH 4 PF 6 , high-covalent InP QDs with sizes of approximately 6 to 10 nm can be obtained within 5 min. During the later stages in this dual-salt system, PF 6 − effectively eliminates surface oxides while zinc ion enrichment establishes a negatively charged surface. This Zn-related configuration promotes subsequent adsorption and defect passivation by NH 4 + . The final core-only QDs exhibit bright NIR-I emission with a photoluminescence quantum yield of up to 74 % in solution. Furthermore, the application potential of these core-only QDs is demonstrated through simple patterning. This work establishes a straightforward, post-treatment-free synthesis of high-performance NIR-I core-only InP QDs, highlighting their substantial promise for next-generation optoelectronic devices.

研究领域: 纳米材料 · 量子点 · 光电子学 · 合成化学 · 半导体纳米晶体
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