ACS Applied Energy Materials
·
2025
·
IF 5.5
Xiaojuan Xu,Xinyu Zhang,Zixiang Zhang,Zerui Wang,Chunyan Yang
Antimony sulfide (Sb2S3) is widely considered as an emerging photovoltaic absorber material due to its low cost, environmental friendliness, intrinsic stability, and abundance. In Sb2S3 photovoltaic devices, the electron transport layer (ETL) is indispensable for facilitating the efficient collection and transporting photogenerated electrons from the absorber layer to the electrode. Among various ETL materials, n-type CdS has been widely applied due to its excellent electron mobility. However, its inherent toxicity, high resistivity, and parasitic light absorption severely limit the performance of Sb2S3 photovoltaic devices. In recent years, indium sulfide (In2S3) has gained significant interest as an alternative ETL due to its robust chemical durability, low toxicity, excellent electron transport capability, and wide bandgap, which effectively blocks hole injection. Nonetheless, the In2S3 ETL alone suffers from severe interfacial recombination due to its interfacial defects and bad energy level matching with a transparent conductive glass electrode. In this work, first, we successfully synthesized In2S3 thin films via a facile, cost-effective, and environmentally friendly approach involving thermal decomposition of indium ethylxanthate (In(S2COEt)3) at 300 °C. Subsequently, the bilayer ETL (SnO2/In2S3) comprising SnO2 and In2S3 was incorporated into Sb2S3 solar cells to optimize interfacial properties and enhanced charge transport. The resulting device achieved the power conversion efficiency (PCE) of 3.91%, conspicuously higher than the 1.22% obtained with the single In2S3 ETL. The dual ETL creates a favorable energy level gradient, while the SnO2 interlayer facilitates the emergence of compact Sb2S3 films with improved crystallinity. This configuration mitigates charge recombination and facilitates electron extraction at the FTO/ETL interface, thereby boosting device performance. This work presents a strategy for constructing the dual ETL by thermally decomposing In(S2COEt)3 on SnO2, offering a cadmium-free, efficient, and environmentally friendly pathway to support the development of Sb2S3 photovoltaic devices.
研究领域:
光伏技术
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材料科学
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纳米技术
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半导体器件
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薄膜技术
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产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Yufei Cheng,Ming Gong,Tete Xu,Enzhou Liu,Jun Fan,Hui Miao,Xiaoyun Hu
Antimony selenide (Sb2Se3) as a light-harvesting material has gradually attracted the attention of researchers in the field of photoelectrocatalysis. Uniquely, the crystal structure consists of one-dimensional (Sb4Se6)n ribbons, with an efficient carrier transport along the ribbon [001] direction. Herein, a novel Sb2Se3@Sb2S3 core–shell nanorod radial–axial hierarchical heterostructure was successfully fabricated by epitaxial growth strategy. Taking advantage of the isomorphous and anisotropic binding modes of (Sb4S(e)6)n ribbons for Sb2Se3 and Sb2S3, the epitaxially grown core–shell heterostructure forms a van der Waals heterojunction across the radial direction and covalently bonded heterojunction along the axial direction. A photocurrent of 1.37 mA cm–2 was achieved at 0 V vs RHE for the hierarchical Sb2Se3@Sb2S3 nanorod photoelectrode with [101] preferred orientation, up to 40 times higher than for pure Sb2Se3. Moreover, the FeOOH was introduced as a cocatalyst. The photoelectrode decorated with FeOOH shows better stability with a H2 generation rate of 18.9 μmol cm–2 h–1 under neutral conditions. This study provides a new insight into the design of antimony chalcogenide heterostructure photoelectrodes for photoelectrochemical water splitting.
研究领域:
光电催化
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材料科学
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纳米技术
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能源材料
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DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Qimeng Peng,Ju Fu,Gang Chen,Dong Feng,Tianbiao Zeng
Antimony sulfides exhibit a tremendous potential owing to the high theoretical specific capacity from multiple redox storage mechanisms for sodium-ion batteries (SIBs). However, these bottlenecks, including low electrical conductivity , poor ionic diffusion kinetics, and severe volume expansion, still restrict the development of antimony sulfide as SIBs anodes. Meanwhile, in view of long-term interests and practical application, the cost-efficient preparation methods become an imminent challenge to the advancement of high-performance SIBs anodes. Here, a novel three-step strategy, composed of co-precipitation, heat reduction processes, and sulfation conversion, was utilized to construct a “reinforced concrete” architecture, in which Sb 2 S 3 nanoparticles embedded in N-doped carbon matrix (NC) modified by carbon nanotubes (CNTs), denoted as Sb 2 S 3 /CNTs/NC. As the “cement block”, the N-doped 3D carbon matrix can promote the electron migration and reduce the aggregation of active materials upon cycling. In terms of “rebars” (i.e., 1D CNTs) for ensuring the anode integrality during incessant sodiation/de-sodiation processes, they function as binders and stabilizers , which intimately cross-link with Sb 2 S 3 nanoparticles and carbon matrix, accommodate the volume change, and maintain the fast transfer of electron transfer inside the whole composite. Benefiting from these merits of the hierarchical structure (i.e., 3D NC and 1D CNTs), as an anode for SIBs, Sb 2 S 3 /CNTs/NC demonstrates an improved sodium storage capability with an initial specific capacity of 770.80 mAh g −1 at 0.1 A g −1 and a superior initial coulombic efficiency (ICE) of 79.90%. Moreover, even at a high current density of 1.0 A g −1 , a reversible capacity of 313.54 mAh g −1 can be delivered after 350 long cycles, indicating the stable cyclicity. The Sb 2 S 3 /CNTs/NC with designed construction and enhanced electrochemical performance could provide a new perspective on low-cost, time-saving, and exercisable synthesis approach for high-performance sulfide-based anodes.
研究领域:
材料科学
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电化学
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能源存储
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纳米技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Liquan Yao,Ming-Hao Lai,Limei Lin,Dong Wei,Zhigao Huang,Shuiyuan Chen,Guilin Chen
Severe back interface recombination still impedes the enhancement of device performance in Sb2S3 solar cells, primarily due to a plethora of defects derived from suspended bonds at the rear surface of Sb2S3. In contrast to the conventional physical absorption method (i.e., Sb2S3/Spiro-OMeTAD), herein, we develop a novel strategy involving cation exchange-assisted hot injection for the in situ anchoring of PbSe nanocrystalline structures to the surface of Sb2S3. This process successfully establishes a deeply buried back interface, thereby creating a robust chemically bonding bridge for facilitating smooth carrier transfer. Additionally, the energy level arrangement has been tailored by the quantum size effect of PbSe particles to mitigate band offsets at the back interface. Consequently, the decent PbSe substantially reduces the density of surface defects from 2.44 × 1016 to 9.8 × 1015 cm–3, leading to an effective suppression of nonradiative recombination as supported by the reduction in the surface photovoltage. Ultimately, the power conversion efficiency of Sb2S3 solar cells based on the ITO/TiO2/CdS/Sb2S3/PbSe/C/Ag architecture is elevated from 6.78 to 7.34%, representing the highest efficiency achieved for full-inorganic Sb2S3 solar cells to date. This construction tactic of the deeply buried back interface sheds light on the pursuit of highly efficient Sb2S3 solar cells.
研究领域:
材料科学
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纳米技术
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光伏技术
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化学
✓ 已验证
产品关联
DOI
高影响因子
Catalysts
·
2023
·Vol. 13
·期 11
·1391
·
IF 3.9
Taoming Yu,Doudou Wang,Lili Li,Wenjing Song,Xuan Pang,Ce Liang
The design of highly efficient organic/inorganic photocatalysts with visible-light response has attracted great attention for the removal of organic pollutants. In this work, the polyacrylonitrile (PAN) worked as the matrix polymer, while polyaniline (PANI) and Sb2S3–ZnO were used as organic/inorganic photocatalysts. The heterojunction PAN/PANI–Sb2S3–ZnO photocatalyst was prepared using electrospinning and surface ultrasound. PAN/PANI–Sb2S3–ZnO exhibited an excellent visible-light absorption intensity in the wavelength range of 400–700 nm. The maximum removal efficiencies of PAN/PANI–Sb2S3–ZnO for four organic dyes were all greater than 99%. The mechanism study showed that a dual Z-scheme could be constructed ingeniously because of the well-matched bandgaps between organic and inorganic components in the photocatalyst, which achieved efficient separation of photogenerated carriers and reserved photogenerated electrons (e−) and holes (h+) with strong redox ability. The active species •OH and •O2−played an important role in the photocatalytic process. The composite photocatalyst also had excellent stability and reusability. This work suggested a pathway for designing novel organic/inorganic composite photocatalysts with visible-light response.Keywords:photocatalyst;Sb2S3;PANI;ZnO
研究领域:
环境科学
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2026
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IF 6.6
Sanmin Liu,Xiaokang Lu,Yuan Li,Xiuhong Jin,Guodong Xia,Sumei Wang
Antimony sulfide (Sb 2 S 3 ) shows promising potential as a light-absorbing material for thin-film solar cells owing to its quasi-one-dimensional structure and excellent photoelectric properties. However, the performance of Sb 2 S 3 solar cells is limited by various material defects and interfacial energy-level misalignment, resulting in a power conversion efficiency far below the theoretical limit. The interface characteristics between CdS and Sb 2 S 3 are considered to significantly influence these factors and, consequently, the overall device performance. In this work, a vapor-phase iodization process was applied to the CdS film to obtain a high-quality CdS/Sb 2 S 3 heterojunction interface. This process reduces the roughness and improves the hydrophilicity of CdS films, providing favorable conditions for the subsequent deposition of Sb 2 S 3 films. Furthermore, it passivates surface defects of CdS and optimizes the energy band alignment at the CdS/Sb 2 S 3 junction, thereby suppressing non-radiative carrier recombination and effectively improving the heterojunction interface. As a result, Sb 2 S 3 solar cells with the iodine vapor processing achieve a power conversion efficiency ( PCE ) of 6.42%, which represents a 15% enhancement compared to untreated reference devices. This study offers a straightforward gas-phase strategy for interfacial engineering of CdS-based solar cells.
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2026
·
IF 8.2
Xuesheng Su,Hao Chen,Lei Wan,Xi Yang,Xuan Fang,Yan Zhang,Guoqing Tong,Junwei Chen,Jun Xu,Ru Zhou
Antimony sulfide (Sb2S3) is a promising, environmentally friendly semiconductor for novel photodetectors in view of its superior optoelectronic properties. In particular, Sb2S3 has a quasi-one-dimensional (Q1D) crystallographic structure, which enables efficient charge-carrier transport for photodetectors if the film orientation can be well-controlled. In this work, high-performance Sb2S3 photodetectors are developed through crystallographic orientation engineering. Hydrothermal deposition processed [hk0]-oriented Sb2S3 films and close-spaced sublimation processed [hk1]-oriented Sb2S3 films were successfully designed to construct photoconductive and photovoltaic Sb2S3 devices, respectively. The careful studies reveal the correlation between the film orientation and device performance. The photoconductive detectors based on [hk0]-oriented films achieve enhanced responsivity of 2.032 A W–1 and detectivity of 2.24 × 1013 Jones in view of favorable horizontal charge-carrier transport. The photovoltaic detectors based on [hk1]-oriented films deliver improved responsivity of 8.35 × 10–2 A W–1 and detectivity of 4.15 × 1012 Jones through efficient vertical charge-carrier transport. This work provides more insights into the dependence of the optoelectronic properties of Sb2S3 devices on the crystal orientation, proving that tailoring preferential crystal orientations through deposition strategies is an effective approach to achieving high-performance photodetectors.
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产品关联
DOI
PubMed
高影响因子
BULLETIN OF MATERIALS SCIENCE
·
2020
·Vol. 43
·期 1
·1-6
·
IF 1.392
Li Lili,Yang Lin,Fu Bowen,Li Zhiqiang
Herein, we demonstrate a hot-injection method towards the fabrication of \(\hbox {Sb}_{2}\hbox {S}_{3}\) . The evolution from amorphous \(\hbox {Sb}_{2}\hbox {S}_{3}\) nanoparticles to a sheaf of \(\hbox {Sb}_{2}\hbox {S}_{3}\) nanorods cross-linked together occurring with the increase of reaction temperature and time is studied. The structural, compositional and morphological features of \(\hbox {Sb}_{2}\hbox {S}_{3}\) products indicate the formation of crystalline \(\hbox {Sb}_{2}\hbox {S}_{3}\) with orthorhombic phase and high purity. As the reaction proceeds, it can be observed that the individual nanorod grows along the elongated direction ( c -axis), and it is noteworthy that its round cross-section could develop into the rectangular cross-section subsequently. In this study we also propose a possible formation mechanism for the growth process of \(\hbox {Sb}_{2}\hbox {S}_{3}\) , and it reveals that the present hot-injection could provide an ideal growth environment for synthesizing the nanostructured materials by optimizing the experimental parameters.
研究领域:
材料科学
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纳米技术
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2019
·Vol. 29
·期 31
·1901720
·
IF 15.621
Hui Deng,Yiyu Zeng,Muhammad Ishaq,Shengjie Yuan,Huan Zhang,Xiaokun Yang,Mingming Hou,Umar Farooq,Jialiang Huang,Kaiwen Sun,Richard Webster,Hao Wu,Zhenhua Chen,Fei Yi,Haisheng Song,Xiaojing Hao,Jiang Tang
Antimony sulfide (Sb 2 S 3 ) as a wide-bandgap, nontoxic, and stable photovoltaic material reveals great potential for the uppermost cells in Si-based tandem cell stacks. Sb 2 S 3 solar cells with a compatible process, acceptable cost, and high efficiency therefore become the mandatory prerequisites to match silicon bottom cells. The performance of vacuum processed Sb 2 S 3 device is pinned by bulk and interfacial recombination. Herein, a thermally treated TiO 2 buffer layer induces quasiepitaxial growth of vertical orientation Sb 2 S 3 absorber overcoming interface defects and absorber transport loss. Such novel growth could pronouncedly improve the open-circuit voltage ( V oc ) due to the superior interface quality and intraribbon transport. The epitaxial rough Sb 2 S 3 surface shows a texturized-like morphology. It is optimized by tuning the grain sizes to form strong light trapping effect, which further enhances the short-circuit current density ( J sc ) with a 16% improvement. The final optimal device with high stability obtains a power conversion efficiency of 5.4%, which is the best efficiency for full-inorganic Sb 2 S 3 solar cells. The present developed quasiepitaxy strategy supports a superior interface, vertical orientation, and surface light trapping effect, which provides a new perspective for efficient noncubic material thin film solar cells.
研究领域:
材料科学
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光伏技术
✓ 已验证
产品关联
DOI
高影响因子
Light-Science & Applications
·
2024
·Vol. 13
·期 1
·1-15
·
IF 20.6
Chen Xiao,Shu Xiaoxuan,Zhou Jiacheng,Wan Lei,Xiao Peng,Fu Yuchen,Ye Junzhi,Huang Yi-Teng,Yan Bin,Xue Dingjiang,Chen Tao,Chen Jiejie,Hoye Robert L. Z.,Zhou Ru
Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb 2 S 3 is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb 2 S 3 solar cells is limited by nonradiative recombination, which is dependent on the quality of the absorber films. Additive engineering is an effective strategy to fine tune the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb 2 S 3 films to be controlled, enabling the deposition of high-quality Sb 2 S 3 absorbers with reduced grain boundary density, optimized band positions, and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb 2 S 3 films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb 2 S 3 absorber films, the MEA-modulated Sb 2 S 3 solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5 G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb 2 S 3 IPVs. Furthermore, we construct high performance large-area Sb 2 S 3 IPV minimodules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb 2 S 3 photovoltaics for indoor energy harvesting.
研究领域:
材料科学
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光伏技术
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能源工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Yanfang Tao,Yanyan Li,Meng He,Xiandong Zhao,Xiaojie Yang,Jinmao Li,Li Zhao,Yang Li,Shimin Wang
Sb 2 S 3 thin-film materials are regarded as promising candidates for next-generation thin-film solar cells due to their superior stability, simple chemical composition, cost-effectiveness, and excellent charge transport properties. In numerous studies, Sb 2 S 3 solar cells prepared with cadmium sulfide as the electron transport layer demonstrated high photovoltaic conversion efficiencies, mainly due to the key role of the CdS layer in optimizing the crystalline quality of Sb 2 S 3 thin films, regulating the crystal growth orientation, and enhancing the charge transport properties. Therefore, cadmium sulfide play a crucial role in determining the crystallinity, growth orientation, and charge transport performance of antimony sulfide films. Currently, the commonly used cadmium sources regarding the CdS preparation process are Cd(NO 3 ) 2 , CdSO 4 , CdCl 2 , and Cd(Ac) 2 . This study systematically investigates the effects of different Cd sources on the crystallization, morphology and charge transport properties of Sb 2 S 3 thin films. The results demonstrate that CdS prepared from Cd(NO 3 ) 2 significantly enhanced the crystallinity, grain morphology, band gap energy level, and photovoltaic performance of Sb 2 S 3 thin films, reaching a photovoltaic conversion efficiency of 4.23 %, which provides a solid foundation for further optimization and improvement of Sb 2 S 3 solar cells.
研究领域:
薄膜太阳能电池
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材料科学
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光伏技术
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半导体材料
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Yuqian Huang,Rongfeng Tang,Peng Xiao,Bo Che,Yan Wang,Huihui Gao,Gang Wang,Changfei Zhu,Tao Chen
Sulfuration plays a decisive role in enhancing crystal growth and passivate defects in the fabrication of high-efficiency metal-sulfide solar cells. However, the traditional sulfuration process always suffers from high-price professional equipment, tedious processes, low activity of S, or high toxicity of H2S. Here, we develop a desired in situ sulfuration by introducing tartaric acid additive into the hydrothermal deposition process of Sb2S3. Tartaric acid, sodium thiosulfate, and potassium antimony tartaric can form Sb2Sx-contained (x > 3) as-prepared films. Encouragingly, the annealing becomes an inspiring in situ sulfuration process, which can obtain a more compact absorber layer. In addition, the crystallinity and defect property of the Sb2S3 film are also improved significantly. Finally, we achieve a high-performance Sb2S3 solar cell with a power conversion efficiency of 6.31%, which shows an encouraging enhancement of ∼15% compared with the traditional hydrothermal process. This study provides an innovative way to prepare high-efficiency Sb2S3 solar cells and provides a desirable guide to realize the in situ sulfuration process.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子