SOLAR ENERGY
·
2023
·
IF 6.7
Yonggang Zhao,Qiaogang Song,Zhineng Zhou,Yufei Chen,Ying Zhang,Lang Wu,Xu Su,Xinghuan Hu,Shurong Wang
In the solution method, the surface morphology characteristic of the precursor film is essential for obtaining the high quality of the absorber layer. Herein, the post-heating treatment (PHT) precursor films were adopted to modify the morphology significantly and the effects of different PHT temperatures on the properties of precursor films, absorber layer films, and photovoltaic devices were investigated. The precursor film with a more porous surface could be obtained by PHT, which facilitates the downward diffusion of Se easily during sulfoselenization and the formation of a large-grain-spanning monolayer structure. Furthermore, the Cu 2 ZnSn(S, Se) 4 absorber layer surface holes were significantly reduced, owing to sufficient grain growth during sulfoselenization. As a result, the device efficiency with PHT was increased to 11.07% mainly due to improved Cu 2 ZnSn(S, Se) 4 absorber spectral response. This study might provide a new potential method for adjusting precursor film morphology and thus enhancing the corresponding device performance.
研究领域:
光伏技术
·
材料科学
·
薄膜太阳能电池
✓ 已验证
DOI
高影响因子
Solar RRL
·
2018
·Vol. 2
·期 12
·1800233
·
IF 0
Qingwen Tian,Haiyang Lu,Yachao Du,Junjie Fu,Xiangyun Zhao,Sixin Wu,Shengzhong (Frank) Liu
Environment-friendly process, low production cost, and simple operation are regarded as key factors for scalable kesterite photovoltaic applications. Herein a green ammonium thioglycolate (TGAm)-based aqueous solution route has been developed to deposit Cu 2 ZnSnS 4 films. It is found that sinstering in ambient air is as good as in argon, making the production process more affordable and reproducible. TGAm is more active than other alkylthiols with longer alkyl chains and has a strong coordination capability toward metal ions, which is a key factor in the dissolution of a series of metal oxides. Meanwhile, TGAm is widely used in biopharmaceuticals and hairspray, demonstrating good biological compatibility. Moreover, a low level of Ag doping can be successfully incorporated into the host lattice of the CZTSSe to form a homogeneous (Cu 1−x ,Ag x ) 2 ZnSn(S,Se) 4 (CAZTSSe) alloy material by this aqueous process. Benefiting from the effect of Ag doping, the initial power conversion efficiency is successfully enhanced from 5.86% ( x = 0) to 7.38% ( x = 2%).
研究领域:
光伏技术
·
材料科学
·
薄膜技术
·
可持续能源
·
半导体材料
✓ 已验证
DOI
Solar RRL
·
2026
·Vol. 10
·期 9
·e70362
·
IF 4.8
Yingjun Zhou,Chuanhe Ma,Shulei Liang,Yujun Li,Hailong Wang
In Cu 2 ZnSn(S, Se) 4 (CZTSSe) solar cells, the conventional magnetron-sputtered ZnO (ZnO-SP) suffers from high cost, low efficiency, and interface damage. This study systematically compares sol–gel ZnO (ZnO-SG) and 18C6 crown ether-modified sol–gel ZnO (ZnO-SG-18C6) as interfacial layers. X-ray diffraction (XRD), scanning electron microscope (SEM), AFM, and X-ray photoelectron spectroscopy (XPS) show ZnO-SP has a uniform hexagonal wurtzite structure, whereas ZnO-SG displays an amorphous fibrous morphology with bright/dark striations. Both exhibit similar UV absorption peaks, but ZnO-SG shows broader absorption and double-exponential decay. Density–voltage ( J – V ) tests reveal that ZnO-SG-18C6 increases PCE from 8.5% to 10.6%, surpassing the 9.5% achieved with ZnO-SP. Electrochemical impedance spectroscopy (EIS) analysis shows that the ZnO-SG-18C6 layer reduces carrier recombination, with the charge transfer resistance ( R ct ) increasing by 30%. Transient photocurrent measurements further reveal that it enhances the photocurrent response, achieving a 1.8-fold increase in the peak, which rises to four times under a 70% high duty cycle.This work demonstrates ZnO-SG-18C6 as a low-cost, high-efficiency alternative to ZnO-SP in CZTSSe solar cells.
✓ 已验证
DOI
高影响因子
OPTICAL MATERIALS
·
2020
·
IF 2.779
Guonan Cui,Yanchun Yang,Ruilan Chen,Chengjun Zhu
Cations substitutions are known to make much significant contribution on achieving the high-quality kesterite Cu 2 ZnSn(S,Se) 4 thin films . And the optimal ratios of Mn, Ni and Co substitutions are reported to be ~0.05, belong to the low doping to reduce their defect density , which looks like to some extent the effect of Na doping. In this study, learning the research experience of alkali metal doping, we introduced the extra trace Mn 2+ ion into the precursor solution without affecting the compositions of other elements (i.e. Cu, Zn, and Sn), and the effect of trace addition on properties of the absorber layer was also studied. It was discovered that crystalline, electrical properties, and hole carrier concentration of Cu 2 ZnSn(S,Se) 4 thin films increased with an increase of Mn incorporation, and the best doping ratio of Mn/(Cu + Zn + Sn) was considered to be 0.03. In addition, the effect of extra trace Mn-doping on the film thickness and elemental compositions of Cu 2 ZnSn(S,Se) 4 absorber layer were studied in detail.
研究领域:
材料科学
·
半导体物理
·
薄膜制备
·
光伏材料
·
固体化学
✓ 已验证
DOI
高影响因子
Nanoscale
·
2016
·Vol. 8
·期 19
·10160-10165
·
IF 7.76
Wangen Zhao,Daocheng Pan,Shengzhong (Frank) Liu
Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm2 without an anti-reflection layer.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2017
·
IF 7.504
Yafang Qi,Qingwen Tian,Yuena Meng,Dongxing Kou,Zhengji Zhou,Wenhui Zhou,Sixin Wu
The partial substitution of Cu+ with Ag+ into the host lattice of Cu2ZnSn(S,Se)4 thin films can reduce the open-circuit voltage deficit (Voc,deficit) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this paper, elemental Cu, Ag, Zn, Sn, S, and Se powders were dissolved in solvent mixture of 1,2-ethanedithiol (edtH2) and 1,2-ethylenediamine (en) and used for the formation of (Cu1–xAgx)2ZnSn(S,Se)4 (CAZTSSe) thin films with different Ag/(Ag + Cu) ratios. The key feature of this approach is that the impurity atoms can be absolutely excluded. Further results indicate that the variations of grain size, band gap, and depletion width of the CAZTSSe layer are generally determined by Ag substitution content. Benefiting from the Voc enhancement (∼50 mV), the power conversion efficiency is successfully increased from 7.39% (x = 0) to 10.36% (x = 3%), which is the highest efficiency of Ag substituted devices so far.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
GREEN CHEMISTRY
·
2014
·Vol. 17
·期 2
·1269-1275
·
IF 6.852
Qingwen Tian,Lijian Huang,Wangen Zhao,Yanchun Yang,Gang Wang,Daocheng Pan
Aqueous solution deposition of metal chalcogenide semiconductor thin films is considered a green and low-cost approach. However, it is hard to find a general aqueous solution approach to deposit various kinds of high-quality metal sulfide thin films. Here, we describe a green and robust ammonium thioglycolate aqueous solution approach, and fifteen types of metal sulfide precursor solutions (metal = Cu, Zn, Sn, Ge, In, Sb, Mg, Cd, Mn, Bi, Fe, Ni, Li, Na, K) can be prepared using metal oxides or metal hydroxides as raw materials at room temperature under an air atmosphere. Moreover, elemental sulfur and selenium can also be highly dissolved. By this green route, high quality CZTS nanocrystal thin films can be deposited by directly coating the mixed Cu, Zn, and Sn precursor solutions without the need for complex nanocrystal synthesis. The remarkable power conversion efficiency of 6.62% was achieved, which is the highest value for aqueous solution deposited CZTSSe thin film solar cells.
研究领域:
材料科学
·
可再生能源
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 9
·期 26
·2201049
·
IF 6.389
Yun Zhao,Qianqian Bai,Liqiang Chai,Xiaofei Dong,Jiangtao Chen,Jianbiao Chen,Yan Li,Xiuxun Han
Aiming at the current bottleneck of Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cells, an experimental analysis of the performance and loss mechanism of CZTSSe thin film solar cells upon proton radiation exposure is presented. In order to deduce the important cell parameters, the environment of the cells is simulated by subjecting the devices to 200 keV proton irradiation with fluences from 1 × 10 10 to 1 × 10 17 cm -2 . It is found that the damage constants are sensitive to the elemental diffusion at heterojunction and Na redistribution in device. The incidence of the proton can lead to bandgap, tails fluctuations, and Urbach energy changes in the cells those directly impact defects and structural disorder in CZTSSe material thereby the device performance. The time-resolved photoluminescence results show that the carrier lifetime is also very sensitive to the distribution of interface elements, especially Na, Cd, and S. These findings may provide new ideas for solving the V OC deficit of CZTSSe solar cells. From this work, it can be also suggested that the CZTSSe thin film solar cells are robust to proton irradiation and have the potential for future space applications.
研究领域:
材料科学
·
光伏技术
·
辐射效应研究
✓ 已验证
产品关联
DOI
高影响因子
AIP Advances
·
2021
·Vol. 11
·期 7
·
IF 1.548
Lv Xiaogong,Zhu Chengjun,Yang Yanchun,Liu Ruijian,Fan Wenliang,Wang Yiming
In this work, Cu 2 ZnSnS 4 (CZTS) precursor films were deposited using a water-based solution approach. Subsequently, selenization was performed at different temperatures in the range of 480–610 °C to prepare Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber-layer films. The effects of the selenization temperature on the crystallinity, structure, morphology, and photoelectric properties of CZTSSe thin films, as well as the performance of solar cells constructed using these films, were systematically studied. The absorber-layer films selenized at different temperatures all formed pure-phase CZTSSe and had basically the same film thickness. It was found that application of an optimal selenization temperature can enhance the crystallinity, crystal grain size, and mobility and reduce the resistivity of CZTSSe films. Selenization at 550 °C resulted in the largest grain size (∼ μ m), the highest crystallinity, the highest mobility (4.29 cm 2 V −1 s −1 ), the lowest resistivity (3.13 × 10 2 Ω cm), the thinner fine-grained layer, a bandgap value of 1.21 eV, and a Cu-poor, Zn-rich elemental composition [Cu/(Zn + Sn) = 0.85 and Zn/Sn = 1.16]. The power-conversion efficiency was improved from 3.04% in a CZTSSe cell device with an absorber layer selenized at 480 °C to 4.69% in a film selenized at 550 °C. This was mainly due to the improvement of the crystallinity, crystal grain growth, and reduction of the fine-grained layer of the CZTSSe film. These results show that optimizing the selenization temperature is essential for enhancing the performance and the ultimate device efficiency of CZTSSe absorber layers prepared using a water-based solution approach.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
GREEN CHEMISTRY
·
2020
·Vol. 22
·期 11
·3597-3607
·
IF 9.48
Hai-Qin Xiao,Wen-Hui Zhou,Dong-Xing Kou,Zheng-Ji Zhou,Yue-Na Meng,Ya-Fang Qi,Sheng-Jie Yuan,Qing-Wen Tian,Si-Xin Wu
Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have been receiving considerable attention in recent years, owing to their low cost and toxicity as well as a high abundance of their constituent elements. Solution-based (mainly precursor solution) methods have been widely used in the fabrication of CZTSSe-based thin film solar cells. Though most record solar cells since 2009 have been achieved using solution-based methods, carbonaceous residues are always formed during post deposition treatment (PDT). These carbonaceous residues are detrimental to grain growth of CZTSSe to form large grains. The presence of unwanted small grain layers will increase the series resistance and reduce the fill factor of the solar cell, thus consequently decreasing the efficiency of CZTSSe solar cells. Herein, we propose “green” supercritical carbon dioxide (SCCO2) treatment to overcome the challenge of carbonaceous residues. FT-IR, SEM, XRD and Raman characterization studies were used to confirm the reduction of carbonaceous residues in CZTSSe films. The solar cell fabricated from a selenized CZTSSe precursor film with SCCO2 treatment under optimal conditions showed the best conversion efficiency of 11.23% (VOC = 0.456 V, JSC = 36.6 mA cm−2, FF = 67.1%). To the best of our knowledge, this is the first report on boosting the efficiency of solution-based CZTSSe solar cells by using SCCO2 treatment. In addition, this unique SCCO2 treatment may also bring forth new ideas for other solution-based optoelectronic devices.
研究领域:
材料科学
·
太阳能
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2024
·
IF 6.3
Letu Siqin,Wenjing Xin,Ruijian Liu,Hongmei Luan,Lei Wang,Yiming Wang,Shuyu Li,Jingyuan Guo,Yu He,Jiayong Zhang,Bin Yao,Chengjun Zhu
Interfaces quality have always been considered the key factors in the fabrication of efficient Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells, and harmful defects at the interface can significantly reduce the performance of the device. Here, we propose a dual passivation strategy by adding Na to the surface of the absorber layer (CZTSSe) to passivate the CZTSSe/CdS interface and treating the buffer layer (CdS) using ultraviolet (UV) irradiation to passivate the CdS/ZnO interface. Due to the Na doping passivation, the absorber surface conductivity increases while the roughness decreases and detrimental defects that can lead to nonradiative recombination are reduced. The power conversion efficiency (PCE) of the cell is improved by about 1 percentage point by Na passivation. The contributions of open-circuit voltage ( V oc ), short-circuit current density ( J sc ), and fill factor (FF) to the improvement of PCE have been quantified as 50.64%, −5.58%, and 54.94%, indicating that Na doping can significantly boost V oc and FF. UV-ozone passivation reduces residual carbon organics in the CdS buffer layer , weakens carrier recombination, allows for more light absorption , and widens the depletion region , which favors efficient carrier collection. The estimated contribution of V oc , J sc , and FF to the PCE of the device is 8.78%, 119.59%, and −28.37%, respectively, demonstrating that UV-ozone passivation can significantly improve the J sc of the device. The two passivation strategies complement each other's advantages and achieve a synergistic effect . Our prepared champion device exhibits a PCE of 10.69% and remarkable long-term stability.
研究领域:
材料科学
·
光伏技术
·
界面工程
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2024
·
IF 6.3
Xiangyang Zhao,Lingling Wang,Yawei Wang,Xingyu Zhang,Rong Fang,Yue Zhou,Rui Guo,Xintong Zhang,Yichun Liu
Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cells are considered a promising new type of film cell, due to their rich elemental reservation and excellent photovoltaic performance. However, the deleterious defects at the heterojunction interface severely hinder charge transport, separation, and extraction, significantly limiting the photovoltaic performance of CZTSSe solar cells. In this study, a simple method involving the incorporation of Cd 2+ and Ag + dual-ion at the heterojunction interface was proposed to reduce interfacial defects. The results showed that Cd 2+ and Ag + dual-ion interface deposition effectively reduced the [2Cu zn + Sn zn ] harmful defects near the heterojunction interface and subsequently reduced the number of recombination centers in the interface. This led to improved carrier recombination at the interface. Meanwhile, the devices achieved a wider depletion width, which was more favorable for carrier collection. Ultimately, the conversion efficiency increased by 32.81 %. This simple interface dual-ion deposition strategy offers a promising strategy for further enhancing the efficiency of CZTSSe cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）