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INORGANIC CHEMISTRY · 2012 · IF 4.601

Syntheses, Structures, Physical Properties, and Electronic Structures of Ba2MLnTe5 (M = Ga and Ln = Sm, Gd, Dy, Er, Y; M = In and Ln = Ce, Nd, Sm, Gd, Dy, Er, Y)

Wenlong Yin,Wendong Wang,Lei Bai,Kai Feng,Youguo Shi,Wenyu Hao,Jiyong Yao,Yicheng Wu

The 12 new rare-earth tellurides Ba2MLnTe5 (M = Ga and Ln = Sm, Gd, Dy, Er, Y; M = In and Ln = Ce, Nd, Sm, Gd, Dy, Er, Y) have been synthesized by solid-state reactions. The two compounds Ba2GaLnTe5 (Ln = Sm, Gd) are isostructural and crystallize in the centrosymmetric space group P1̅, while the other 10 compounds belong to another structure type in the noncentrosymmetric space group Cmc21. In both structure types, there are one-dimensional anionic 1∞[MLnTe5]4– chains built from LnTe6 octahedra and MTe4 (M = Ga, In) tetrahedra, but the connectivity between the LnTe6 octahedra and MTe4 tetrahedra is different for the two structure types. On the basis of the diffuse-reflectance spectra, the band gaps are around 1.1–1.3 eV for these compounds. The Ba2MLnTe5 (M = Ga and Ln = Gd, Dy; M = In and Ln = Gd, Dy, Er) compounds are paramagnetic and obey the Curie–Weiss law, while the magnetic susceptibility of Ba2InSmTe5 deviates from the Curie–Weiss law. In addition, electronic structure calculation on Ba2MYTe5 (M = Ga, In) indicates that they are both direct-gap semiconductors with large nonlinear-optical coefficients.

CAS / MDL: 7440-39-3
研究领域: 材料科学 · 凝聚态物理
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JOURNAL OF ALLOYS AND COMPOUNDS · 2025 · IF 6.3

Optimizing electrostrain in textured PNN-PHT piezoceramics through defect engineering

Xi Ouyang,Manwen Yao,Xi Yao,Tongqing Yang

The piezoelectric properties of lead-based ceramics can be enhanced by A -site doping with rare earth elements and texture engineering. However, the effects of defect engineering and the mechanism of enhancing the unipolar electrostrain need to be further explored. This study aims to investigate the microscopic properties and changes in defect dipoles in lead piezoceramics with Sm-doping and texture engineering. Specifically, temperature-dependent XRD and Raman tests showed that texture engineering exhibited remarkable structural stability, and a systematic test was conducted on the temperature stability of the piezoelectric constant d 33 , which fully confirmed a significant positive correlation between the temperature stability and the structural stability of the piezoceramics. Additionally, the epitaxial process induced a high density of interfacial defects due to lattice mismatch, which was analyzed by EPR testing. We observed a 41 % increase in the concentration of oxygen vacancies with texture engineering, but this was reduced by 19 % with 1 % Sm-doping. Furthermore, the buffer layer formed by Sm-doping helps to mitigate the rotation of the BO 6 octahedron during the epitaxy process, resulting in a 29 % reduction in Raman peak broadening. The changes in the defect dipole displacement polarizabilities after Sm-doping were also calculated through defect engineering. The mechanism of high unipolar electrostrain was explored by examining the variations between oxygen vacancy concentration, defect dipole displacement polarizabilities, internal bias field, asymmetry, and leakage current. These results demonstrate the feasibility of texture engineering for high electrostrain through defect engineering and have significant implications for optimizing the reliability of piezoelectric devices in high-temperature environments.

CAS / MDL: 12055-23-1 1313-99-1
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CRYSTENGCOMM · 2024 · IF 2.6

Red-emitting Cs2NaScCl6:Sm flexible films for high-resolution X-ray imaging

Yuxia Li,Qi Luo,Xin Huang,Hao Lu,Yazhou Yuan,Xieming Xu,Shuaihua Wang,Shaofan Wu

In recent years, the development of new scintillation materials with red and near-infrared light emission has had significant advantages based on the development of an avalanche photodiode with high quantum yield. This study used a hydrothermal method to synthesize rare-earth-doped Cs2NaScCl6 crystals, in which a red emission of Cs2NaScCl6:Sm was investigated with high X-ray sensitivity and low detection limit. In addition, a tunable wavelength range of radioluminescence can be achieved, in which a near-white light emission can be generated by precisely controlling the proportion of Sm3+ and Tb3+ doping concentrations. Meanwhile, a Cs2NaScCl6:7%Sm scintillation film has been successfully prepared by direct coating with a thickness of 150 μm, which achieves a spatial resolution of 11.9 lp mm−1 based on X-ray imaging experiments. Therefore, this perovskite material has shown potential application as an eco-friendly multifunctional imaging material.

研究领域: 材料科学 · 医学影像 · 光学
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CHEMICAL ENGINEERING JOURNAL · 2025 · IF 13.2

Realization and regulation of artificial synaptic functions in multiferroic Sm-doped SnS₂

Yu Tong,Xi Chen,Hong-Peng Zhang,Jian-Yu Ling,Hao-Qun Zeng,Ke-Wei Zhang,Ming-Zhe Zhang

Ferroelectric materials exhibit switchable polarization and non-volatile characteristics, promising for applications in neural morphology calculations. Among them, multiferroic materials have garnered significant attention due to their simultaneous ferroelectricity and ferromagnetism. We synthesize Sm-doped SnS 2 wafer with interlayer screw dislocations through the vapor-liquid phase chemical deposition, high-temperature and high-pressure methods. Manufacturing a memory device based on Sm-doped SnS 2 wafer, which exhibits stable memory characteristics with a retention time of 10 6  s and can be repeated for up to 10 6  cycles. It can simulate the functional characteristics of biological synapses, such as excitatory postsynaptic currents, paired-pulse facilitation, and the transition from short-term to long-term plasticity. The recognition accuracy rate for handwritten numbers is as high as 92.5 %. Therefore, the addition of Sm leads to the formation of interlayer screw dislocations in the SnS 2 layers, which disrupts the symmetry of the system and causes the ferroelectric properties to emerge. The substitution of Sm for Sn closely integrates with the SnS 2 lattice, providing a stable local magnetic moment. The 4f electrons occupy the energy band near the Fermi level and undergo orbital hybridization with S, resulting in the formation of ferromagnetic exchange interactions, achieving the ferromagnetism. This work opens prospects for fabricating synaptic devices based on ferroelectric switching, which can be used in neuromorphic systems.

研究领域: 材料科学 · 神经形态工程 · 凝聚态物理 · 铁电与多铁材料 · 纳米电子学
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INTERNATIONAL JOURNAL OF HYDROGEN ENERGY · 2025 · IF 8.3

Sm-doped NiMgAl hydrotalcite-derived catalyst for enhanced low-temperature CO2 methanation

Hong-Mei Jiang,Jian Sheng,Jie Fan,Hang Yao

Developing high-performance Ni-based catalysts for low-temperature CO 2 methanation remains challenging due to Ni particle aggregation caused by weak metal-support interactions at high loadings. To address this issue, Sm-modified Ni catalysts were prepared via direct reduction of Sm-doped NiMgAl layered double hydroxide precursors. The optimized 1.0Sm-NiMgAl-R catalyst exhibited markedly improved activity and stability compared to the unmodified sample, maintaining a 53 % CO 2 conversion and a CH 4 productivity of 142 mmol g cat −1  h −1 during a 115-h test at 240 °C. H 2 -TPR and XPS analyses revealed that Sm promoted electron transfer to Ni, which strengthened the metal–support interaction and stabilized the Ni nanoparticles. CO 2 -TPD and O 1s XPS confirmed that Sm incorporation promoted the formation of weak/medium basic sites and surface oxygen vacancies, facilitating CO 2 activation. In situ DRIFTS showed that Sm doping favored the formate pathway via enhanced ∗HCOO formation and suppressed carbonate species (∗HCO 3 ) under low-temperature conditions, leading to improved methanation performance. This work offers a novel strategy for designing efficient and sustainable catalysts for low-temperature CO 2 methanation.

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NEW JOURNAL OF CHEMISTRY · 2025 · IF 2.5

Enhancement of the electrochemical performance of Sm-doped cobalt-free LiNi0.55Mn0.45O2 cathodes

Tiantian Wang,Lei Ni,Xu Sun,Hejie Lu,Haiqiang Li,Maosen Fu,Xiao Ma

Co-free binary cathode materials (LiNixMn1−xO2, x ≥ 0.5) are promising candidates for lithium-ion batteries (LIBs) due to their high specific capacity and low cost. The degradation of the low-temperature electrochemical performance of these materials not only hinders their practical application but also emerges as a critical research focus in energy storage technologies. In this work, the effect of Sm doping on the structure and electrochemical performance of LiNi0.55Mn0.45O2 (NM5545) cathode materials (x% Sm-NM5545, x = 0, 0.5, 1.0, 1.5) is systematically investigated over a wide temperature range (−10 to 45 °C). Sm doping significantly enhances the structural stability and enlarges interlayer spacing, which likely facilitates Li+ transport. Compared with undoped NM5545, the 1.0% Sm-NM5545 cathode materials exhibit remarkable improvements in capacity retention, which increases by 14.1%, 8.0%, and 9.4% after 100 cycles at temperatures of −10 °C, 25 °C, and 45 °C (1.0C, 3.0–4.45 V), respectively. Meanwhile, the discharge-specific capacity of 1.0% Sm-NM5545 cathode materials increases by 7.9 mA h g−1, 9.1 mA h g−1, and 12.9 mA h g−1 at the above respective temperatures. Electrochemical impedance spectroscopy and galvanostatic intermittent titration technique analyses confirm that Sm doping has enhanced the lithium-ion migration rate while reducing the charge transfer resistance in the modified materials. Furthermore, post-cycling characterization via scanning electron microscopy and X-ray photoelectron spectroscopy reveals that Sm doping effectively reinforces the structural integrity, suppresses crack propagation during high voltage cycling, and inhibits detrimental cathode–electrolyte interfacial reactions.

CAS / MDL: 554-13-2
研究领域: 材料科学 · 电化学
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International Journal of Applied Ceramic Technology · 2026 ·Vol. 23 ·期 1 ·e70135 · IF 2.3

Electric-field-modulated photoluminescence performance of Sm/Mn-codoped AgNbO3 antiferroelectric ceramics

Yihao Lin,Bingqing Yang,Cong Lin,Xiao Wu,Chunlin Zhao,Min Gao

The electric-field-modulated photoluminescence ( E -PL) performance of rare-earth-doped ferroelectric (FE) materials has been widely studied. However, the hysteresis effect in FE materials limits the tunability of E -PL modulation. Antiferroelectric (AFE) materials possess a reversible AFE-FE phase transition, inducing changes in crystal structure that can significantly affect the E -PL intensity. In this work, Sm/Mn-codoped silver niobate ceramics (ASMN x , x = 0, 0.5, 1, 1.5, 2) were fabricated via the tape-casting method, and the AFE properties, thermal stability, and E -PL performance were systematically investigated. The results show that the addition of Sm and Mn ions effectively inhibits the growth of grains and enhances the AFE properties. Upon irradiation at 480 nm, the samples exhibit a down-conversion PL effect, and the PL intensity increases with increasing Sm 3+ doping concentration. The in situ modulation of the PL intensity is reversibly achieved through the E -induced AFE-FE phase transition. Among them, ASMN1 shows the best tunability of −30.18% at 300 kV cm −1 . The excellent E -PL tunability in the lead-free ASMN x ceramics contributes to the broad applications in optical information storage, optical communication, and multifunctional optoelectronic devices.

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Nanomaterials · 2021 ·Vol. 11 ·期 3 ·769 · IF 5.076

Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping

Shijie Li,Shidai Tian,Yuan Yao,Meng He,Li Chen,Yan Zhang,Junyi Zhai

Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS2film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS2was achieved. The threshold voltage of an Sm-doped MoS2-based field effect transistor (FET) moved from −12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS2. Additionally, the electrical performance of the monolayer MoS2-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET’s mobility. The electronic property enhancement resulted from Sm doping MoS2, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.Keywords:monolayer MoS2;CVD growth;Sm doping;electrical performance;FET

CAS / MDL: 7704-34-9
研究领域: 材料科学 · 纳米技术 · 电子学
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JOURNAL OF SOLID STATE ELECTROCHEMISTRY · 2023 · IF 2.5

Facile synthesis of Sm vanadate nanowires and sensitive detection of cobalt ions

Feng Chenxu,Wang Xiaoyu,Cong Qianmin,Sun Zizhan,Cai Zhengyu,Fan Chuangang,Pei Lizhai

A facile hydrothermal approach was applied for synthesizing single crystalline Sm vanadate nanowires without any surfactants, and the formation mechanism of the Sm vanadate nanowires was analyzed in detail. The Sm vanadate nanowires possess a tetragonal SmVO 4 phase, smooth surface, length of tens of micrometers, and a diameter of 30–100 nm, respectively. The Sm vanadate nanowires can be applied as the electrode materials with excellent electron transfer interface, exhibiting good electrocatalytic performance for Co 2+ detection by square wave voltammetry (SWV) technique. A well-defined potential at + 0.60 V exists at the Sm vanadate nanowire–modified electrode in KCl electrolyte with 1 mM Co 2+ . Electrolyte pH value, deposition time, deposition potential, and standing time are optimized to be pH = 6, 90 s, − 1.5 V, and 60 s, respectively. Sm vanadate nanowire–modified electrode indicates a linear detection range of 0.01–1000 μM, detection limit of 0.23 nM, good stability, reproducibility, and selectivity for Co 2+ detection. The Sm vanadate nanowires provide promising electrode materials and are applicable for the detection of Co 2+ in real water environment.

CAS / MDL: 13569-80-7 13718-26-8
研究领域: 材料科学 · 分析化学
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JOM · 2025 · IF 2.3

Study of High-Performance Solid Oxide Electrolytic Cell Based on BaZr0.8Y0.2−xSmxO3−δ Proton Conductor Electrolyte

Huang Yongtao,Zheng Jie,Li Ying,Wang Zezhong

To address the low conductivity of yttrium-doped BaZrO 3 (BZY) proton-conducting electrolytes, this study synthesized Sm-doped BaZr 0.8 Y 0.2− x Sm x O 3−δ ( x  = 0–0.15) via sol–gel, systematically investigating the effects of Sm doping on the structural, morphological, and electrochemical properties. Key findings reveal that optimal Sm doping ( x  = 0.05) produces homogeneous grains (relative density: 97.39%), reduces lattice parameters (4.208 Å), and enhances conductivity to 12.4 × 1 0 −3 S cm −1 at 650°C, which is 63% higher than that of undoped BZY (7.6 × 10 −3 S cm −1 ). The anode-supported SOEC based on BaZr 0.8 Y 0.2− x Sm x O 3−δ ( x  = 0.05) prepared by the co-pressing method shows good performance at low temperatures: the electrolytic current reaches up to 0.31 A cm −2 at 650°C and a voltage of 1.5 V (34.8% higher than undoped cells), and a hydrogen production rate of 129.58 mL cm −2  h −1 . This work demonstrates that controlled Sm doping in BZY significantly boosts ionic transport and SOEC efficiency at 650°C, providing a viable strategy for next-generation proton-conducting electrochemical devices.

研究领域: 能源材料 · 电化学 · 陶瓷材料 · 氢能制备技术
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JOURNAL OF CHEMICAL THERMODYNAMICS · 2019 · IF 2.29

Phase equilibria in Mg(NO3)2–Ln(NO3)3 (Ln = Nd, Sm, Eu, Tb)–HNO3 (∼20%)–H2O systems at 298.15 K and thermodynamic properties of Mg3Ln2(NO3)12·24H2O (Ln = Nd, Sm)

Zhan-Ping Qiao,Meng-Yao Su,Yuan-Lin Dang,Qi-Chao Yang

The phase diagrams of the Mg(NO 3 ) 2 –Ln(NO 3 ) 3 (Ln = Nd, Sm, Eu, Tb)–HNO 3 –H 2 O systems in the (∼20%) HNO 3 regions at T  = 298.15 K were determined by using an isothermal solution saturation method. The Schreinemaker’s wet residues method was used to determine the compositions of solid-phases. Both Mg(NO 3 ) 2 –Nd(NO 3 ) 3 –HNO 3 –H 2 O and Mg(NO 3 ) 2 –Sm(NO 3 ) 3 –HNO 3 –H 2 O systems are complicated with three equilibrium solid phases Mg(NO 3 ) 2 ·6H 2 O, Mg 3 Ln 2 (NO 3 ) 12 ·24H 2 O and Ln(NO 3 ) 3 ·6H 2 O (Ln = Nd, Sm). But the systems Mg(NO 3 ) 2 –Eu(NO 3 ) 3 –HNO 3 –H 2 O and Mg(NO 3 ) 2 –Tb(NO 3 ) 3 Tb–HNO 3 –H 2 O are simple eutonic type. The two new solid-phase compounds Mg 3 Nd 2 (NO 3 ) 12 ·24H 2 O and Mg 3 Sm 2 (NO 3 ) 12 ·24H 2 O are congruently soluble in an average medium of ∼20 mass % HNO 3 , and they were identified and characterized by the methods of powder X-ray diffraction, X–ray diffraction single crystal structure analysis, and thermogravimetric/differential thermogravimetric. The XRD diffraction patterns for the two new solid-phase compounds are identical due to their isomorphic structure. They belong to hexagonal systems, with space group R 3 . For Mg 3 Nd 2 (NO 3 ) 12 ·24H 2 O, a  =  b  = (1.0993 ± 0.0005) nm, c  = (1.7211 ± 0.0007) nm, V  = (1.8012 ± 0.0013) nm 3 , D c  = (4.2532 ± 0.0024) g·cm −3 , Z  = 3; for Mg 3 Sm 2 (NO 3 ) 12 ·24H 2 O, ( a  =  b  = 1.1198 ± 0.0004) nm, c  = (1.7257 ± 0.0006) nm, V  = (1.8742 ± 0.0011) nm 3 , D c  = (4.1201 ± 0.0012) g cm −3 , Z  = 3. The standard molar enthalpies of solution of the compounds Mg 3 Nd 2 (NO 3 ) 12 ·24H 2 O and Mg 3 Sm 2 (NO 3 ) 12 ·24H 2 O in water (aq) were measured to be (101.26 ± 0.77) kJ mol −1 and (80.27 ± 0.81) kJ mol −1 , and their standard molar enthalpies of formation were calculated to be – (12214.13 ± 2.5) kJ mol −1 and – (12183.6 ± 2.5) kJ mol −1 , respectively.

研究领域: 化学 · 物理化学 · 材料科学
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ACS Applied Energy Materials · 2025 · IF 5.5

Sm Doping-Enhanced Li3VO4/C Electrode Kinetics for High-Performance Lithium-Ion Batteries

Yuanlang Wan,Xuefang Xie,Shuang Zhou,Weihang Li,Jingkang Ma,Yaqin Zhou,Yijian Song,Ji Zhou,Anqiang Pan

Li3VO4 (LVO) presents significant advantages in cost and capacity, making it a promising candidate for next-generation lithium-ion battery (LIB) anodes. However, its low electronic conductivity hampers practical applications. Herein, we report a Sm-modified Li3VO4/C composite (LSVO/C) designed for high-performance LIBs. Sm doping introduces additional defects and optimizes the electronic structure of Li3VO4, resulting in a significantly enhanced electronic conductivity (2.94 × 10–3 S cm–1) of the composites. Furthermore, the carbon-fiber-based framework effectively maintains structural stability during cycling, facilitating superior ion transport kinetics. Benefiting from these enhancements, the LSVO/C composite achieves remarkable discharge capacities of 379.5 mAh g–1 at 0.25 C and 260.1 mAh g–1 at 12.5 C. Additionally, an LSVO/C||NCM111 full cell, using LiNi1/3Co1/3Mn1/3O2 (NCM111) as the cathode, retains a discharge capacity of 50.5 mAh g–1 after 1000 cycles at 3.0 C, highlighting the potential of LSVO/C for practical applications. This unique method in preparing anode material will open new gates for highly efficient LIBs.

CAS / MDL: 7803-55-6 546-89-4
研究领域: 材料科学 · 能源存储技术
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