ACS Applied Electronic Materials
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2025
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IF 4.7
Xiaoyan Li,Fangjun Wang,Yubin Hu,Nan Jiang,Xiaosheng Liu,Xianquan Wei,Yanping Xiao,Wei Hu
During the past decade, hybrid inorganic–organic perovskites (HIOPs) and amorphous metal-oxide semiconductors (AMOSs) have attracted enormous interest in the construction of optoelectronic and electronic devices, respectively. Herein, a liquid-phase epitaxy method is introduced for the first time to construct phenylethylamine lead iodide (PEAPbI) crystals on an indium gallium zinc oxide (IGZO) film, which is obtained by the sol–gel method. The fundamental material and structural properties are performed. Compared with a pristine layer, a bilayer of the PEAPbI/IGZO absorber shows improved absorption capability in the spectrum from ultraviolet to visible. A heterojunction photodetector (HJPD) is constructed and compared with the PEAPbI crystal device. Under the incident light of 365 and 405 nm, the photo-to-dark current ratio (PDCR) and responsivities (R) of the HJPD are about 10 times higher than those of the latter, and the detectivities (D*) increase by 2 orders of magnitude as well. The device’s working mechanism for the HJPD is then discussed. Based on the type-II energy band structure, it is found that the photogenerated carriers can be separated more efficiently in the heterostructure device and realize the enhancement of the device’s photoresponse properties. This work provides a novel approach to building heterostructures for large-area, low-cost, and high-performance optoelectronic devices.
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ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Zenghui Wu,Guoan Tai,Runsheng Liu,Chuang Hou,Wei Shao,Xinchao Liang,Zitong Wu
The emergence of borophene has triggered soaring interest in the investigation of its superior structural anisotropy, a novel photoelectronic property for diverse potential applications. However, the structural instability and need of a metal substrate for depositing borophene restrict its large-scale applications toward high-performance electronic and optoelectric devices. van der Waals epitaxy is regarded as an efficient technique for growing superb two-dimensional materials onto extensive functional substrates, but the preparation of stable and controllable borophene on nonmetallic substrates is still not reported. Here, we demonstrate that borophene films can be synthesized onto a mica substrate by van der Waals epitaxy, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene coincides with the predicted α′-boron sheet. The borophene-based photodetector shows an excellent photoresponsivity of 1.04 A W–1 and a specific detectivity of 1.27 × 1011 Jones at a reversed bias of 4 V under illumination of a 625 nm light-emitting diode, which are remarkably superior to those of reported boron nanosheets. This work facilitates further studies of borophene toward its attractive properties and applications in novel optoelectronic devices and integrated circuits.
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JOURNAL OF SOLID STATE CHEMISTRY
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2020
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IF 2.726
Da-Wei Wang,Yin-Di Zhu,Song Lei,Shu-Mei Chen,Zhi-Gang Gu,Jian Zhang
Hydrogen evolution reaction (HER) in water splitting plays an important role in the storage and conversion of clean energy. The development of efficient electrocatalytic materials for HER has attracted much attention in current research. In this work, a homogeneous NiFe-based prussian blue analogue (NiFe-PBA) thin film is prepared on the surface of nickel foam by liquid phase epitaxial (LPE) layer-by-layer (LBL) dipping method. Then the NiFe-PBA film reacts with PH 3 produced by sodium hypophosphite to form a bimetal phosphide NiFeP film. The electrocatalytic HER properties under alkaline condition indicate that the NiFeP film only requires 99 mV overpotential to reach 10 mA cm −2 and the performance can be maintained for over 30 h without obvious degradation even at 100 mA cm −2 . The results imply that the prepared NiFeP film has excellent HER performance and durable stability. This work is of great significance for the preparation of self-supporting and low-cost bimetal phosphide thin film for efficient HER.
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SENSORS AND ACTUATORS B-CHEMICAL
·
2023
·
IF 8.4
Jianwang He,Zhijin Cheng,Zhuo Liu,Meijuan Yin,Yuchi Zhang,Le Han,Yan Xu
Although metal oxides based gas sensors have been researched extensively in previous works, there are enormous challenges on improving the deficiencies in poor selectivity, sensitivity, humidity resistance and so on. Hence, we developed an epitaxial growth method to prepare dendritic Co 3 O 4 /In 2 O 3 -(1−3) heterostructures of distinct Co/In mass ratios through perfect lattice matching between the two crystal domains at the interface, along with introducing large amounts of oxygen vacancies . As a result, the Co 3 O 4 /In 2 O 3 -2 heterostructure based gas sensor showed enhanced sensing properties towards triethylamine (TEA, 100 ppm) with a high response value of Ra/Rg = 576.1 at an optimal working temperature of 200 °C, which is 93 times higher than that of pristine In 2 O 3 . Moreover, the Co 3 O 4 /In 2 O 3 -2 sensor exhibited excellent gas selectivity, quick recovery time, repeatable cycling, long-term stability, as well as outstanding humidity resistance. The improved TEA gas sensing performance can be attributed to the integration of interfacial synergies in Co 3 O 4 /In 2 O 3 p-n heterostructure and generation of rich oxygen vacancies, exposing more active sites to facilitate the adsorption/desorption of gas molecules. This work provides a feasible pathway to regulate TEA sensing performance of metal oxide semiconductor (MOS) gas sensors by capitalizing on self-sacrificial template strategy and reconstruction of novel metal oxide heterostructure.
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JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2023
·
IF 9.9
Yuantao Li,Jiajun Zhu,Jiyang Xie,Yongyun Mao,Wanbiao Hu
Constructing three-dimensional (3D) hierarchical bimetallic pseudocapacitive materials with abundant opening channel and heterojunction structures is rather promising but still challenging for high-performance supercapacitors. Herein, a self-sacrifice-template epitaxial growth strategy was proposed for the first time to construct 3D hierarchical bimetallic pseudocapacitive material. By using this strategy, NiCo 2 O 4 nanowires (NiCo 2 O 4 NW) arrayed randomly to form a porous shell via in-situ epitaxial growth fully enclosing a MnO 2 tube core, forming multiple transport channels and nano-heterojunctions between MnO 2 and NiCo 2 O 4 NW, which facilitates electron transfer, i.e. exhibiting high electronic conductivity than any single component. As a result of the self-sacrifice-template epitaxial growth method, special hollow tectorum-like 3D hierarchical structure with considerable inter-nanowire space and hollow interior space enables easy access of electrolyte to NiCo 2 O 4 NW surface and MnO 2 core, thereby resulting in highly exposed redox active sites of MnO 2 core and NiCo 2 O 4 NW shell for energy storage. Comprehensive evaluations confirmed MnO 2 @NiCo 2 O 4 NW was a supercapacitor electrode candidate, delivering a superior energy density of 106.37 Wh kg −1 . Such performance can be ascribed to the synergistic coupling effect of 3D hierarchical tube and nano-heterojunction structures. The proposed self-sacrifice-template epitaxial growth strategy provides important guidance for designing high-performance energy storage materials.
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Small Methods
·
2024
·
IF 10.7
Lirong He,Xingang Liu,Cheng Han,Dehui Wang,Qi Wang,Xu Deng,Chuhong Zhang
For polyvinylidene fluoride (PVDF) based piezoelectric composites, epitaxial growth of ZnO nanorods (ZnO-nr) piezoceramic layer on PVDF is an effective way to improve their piezoelectric performance. However, the crystal nucleus of ZnO featuring polar surfaces that cannot be directly attached to hydrophobic PVDF with low surface energy. Herein, direct ink writing (DIW) 3D printing is employed for the first time to create β-PVDF reservoirs with significantly enhanced surface energy, facilitating the attachment and epitaxial growth of ZnO-nr. The printed β -PVDF reservoirs designed with programmed macro-pores and abundant inner micropores, enable a higher loading of ZnO-nr by more than one magnitude, thereby boosting the electro-mechanical response. The resulting PVDF/ZnO core–shell piezoelectric energy harvester (PEH) delivers an output voltage of 33.2 V, as well as an unprecedentedly high relative output voltage of 2.76 V/wt.%, which is 2.63 times that of the state-of-the-art 3D-printed PVDF/piezoceramics PEHs. Furthermore, it can differentiate subtle human motions whereas hybrid PEHs cannot distinct. This work demonstrates that the DIW 3D printing approach offers a simple and convenient design idea for creating high performance PEHs.
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Journal of Materials Chemistry A
·
2013
·Vol. 1
·期 13
·4228-4235
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IF 0
Yu Bai,Ran Long,Chengming Wang,Ming Gong,Yanrui Li,Hao Huang,Hui Xu,Zhengquan Li,Mingsen Deng,Yujie Xiong
A method has been developed for controlled epitaxial growth on cubic nanocrystals by selectively activating their surface via etching. For example, it produces Pd concave nanocubes via seeding growth on their corners and edges, and in turn, formulates highly active sites for catalysis. This method offers a better capability of preventing atomic addition on undesired locations and maintaining particle size in the seeding process, as compared with the previous technique. With the particle size well maintained, the products fully exhibit superior electrocatalytic performance enabled by active sites and high-index facets in formic acid oxidation. Another contribution of this work is to enable the growth of a noble metal with high catalytic activities on another type of cheaper metal, which greatly reduces the usage of expensive materials while retaining high catalytic activity. In this article, we have demonstrated the deposition of a very limited amount of Pt (only 3.3 wt%) on Pd nanocrystals towards high electrocatalytic activities in an oxygen reduction reaction. Preliminary studies demonstrate that the synthetic strategy can be also applied to the controllable deposition of a different material on the faces of a nanocrystal by simply altering surface conditions.
研究领域:
材料化学
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纳米科学与技术
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催化化学
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电化学
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表面科学
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功能纳米材料
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INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
·
2026
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IF 3.9
Yisha Huang,Shuqi Yu,Ji Zhou,Chaoling Wu,Yun Zhang,Yao Wang
The development of stable and efficient alkaline hydrogen oxidation reaction (HOR) electrocatalysts is critical for advancing alkaline exchange membrane fuel cells. Ruthenium (Ru) shows promise as a HOR catalyst with cost advantages over platinum (Pt) but suffers from low intrinsic activity and oxidation vulnerability. Herein, we combine lattice-matched epitaxial growth with active metal carrier interaction (RMSI). For the first time, a simple impregnation-annealing method was employed to achieve lattice-matched epitaxial growth between Ru nanoparticles and titanium carbide (TiC) during deposition on the TiC surface, providing an efficient and stable interfacial structure for the RMSI. RMSI promotes electron transfer from TiC to Ru, modulates Ru’s electronic structure, and optimizes its hydrogen adsorption Gibbs free energy (△GH*). Experimental data and density functional theory (DFT) calculations confirm that the synergy between the epitaxial structure and RMSI significantly enhances the alkaline HOR activity. Consequently, the Ru/TiC-200 catalyst exhibits a higher kinetic current density than Pt/C, with a performance 5.31 times that of Ru/C.
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Nature Communications
·
2023
·Vol. 14
·期 1
·1-10
·
IF 16.6
Zhai Li,Gebre Sara T.,Chen Bo,Xu Dan,Chen Junze,Li Zijian,Liu Yawei,Yang Hua,Ling Chongyi,Ge Yiyao,Zhai Wei,Chen Changsheng,Ma Lu,Zhang Qinghua,Li Xuefei,Yan Yujie,Huang Xinyu,Li Lujiang,Guan Zhiqiang,Tao Chen-Lei,Huang Zhiqi,Wang Hongyi,Liang Jinze,Zhu Ye,Lee Chun-Sing,Wang Peng,Zhang Chunfeng,Gu Lin,Du Yonghua,Lian Tianquan,Zhang Hua,Wu Xue-Jun
Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.
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JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2024
·
IF 9.4
Zhinian Liu,Guojun Li,Mingjia Zhang,Chen Zhang,Wangsheng Zheng,Xiangting You,Shule Zhang,Qin Zhong
The lack of compactness in heterojunction interfaces and poor charge separation is a great challenge in developing high-efficiency heterojunction photocatalysts . Herein, a novel Bi 4 Ti 3 O 12 -BiPO 4 heterojunction was successfully prepared for the first time by epitaxial growth of BiPO 4 on the surface of Bi 4 Ti 3 O 12 nanosheets . The optimized Bi 4 Ti 3 O 12 -BiPO 4 -0.5 increased the NO oxidation efficiency to 73.05%, surpassing pure Bi 4 Ti 3 O 12 (63.45%) and BiPO 4 (8.35%). Experiments and theoretical calculations indicated that the closely contacted heterointerface between BTO and BPO promoted the generation of the built-in electric field, which led to the formation of the Z- scheme transfer pathway for the photogenerated carriers . Therefore, the separation of photogenerated carriers was facilitated while retaining high redox potential , generating more ·O 2 – and ·OH to participate in NO oxidation. Furthermore, the adsorption of NO and O 2 was enhanced by introducing BiPO 4 , further improving the photocatalytic NO oxidation performance. This work emphasizes the critical role of heterointerface in accelerating charge transfer, providing a basis for the design and construction of tightly contacted heterojunction photocatalysts .
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Journal of Materials Chemistry C
·
2025
·
IF 5.1
Ziyi Liu,Xin Wang,Wei Lei
Lead halide perovskite single crystals (LHPSCs), leveraging their high atomic number, excellent carrier transport properties, and tunable bandgap, demonstrate unique potential in gamma spectroscopy detection. Among kinds of LHPSCs, MAPbBr3 (MA=CH3NH3) is the easiest to grow from solution with centimeter-scale size. Existing devices suffer from large noise at high bias or low collection efficiency at low bias. Our work aims to address this trade-off, designing a gamma spectroscopy detector that achieves high charges collection efficiency and low noise under high bias. This study proposes a structure of p-MAPbBr₃/i-MAPbBr₃/n-MAPbBr₃ PIN photodiode via heterovalent metal cooperation and epitaxial growth. By constructing such a homojunction PIN structure, defects near the interface were significantly suppressed Under zero bias, the widths of the depletion layers for N-I and I-P reach 1.04 μm and 0.94 μm, respectively, demonstrating the effective growth of a PIN junction. Consequently, the noise is only 4.2×103 electrons at 2400 V cm⁻¹, the mobility-lifetime product is 3.44×10-3 cm2V-1, thus significantly improving the carrier collection efficiency of over 80%. Experimental results reveal outstanding performance in detecting 662 keV gamma-ray photons, achieving an exceptional energy resolution of 3.5% under an electrical field of 2400 V cm-1. This work provides useful information for the fabrication of perovskite-based gamma-ray detectors.
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Coatings
·
2022
·Vol. 12
·期 3
·329
·
IF 3.236
Rong Tu,Chengyin Liu,Qingfang Xu,Kai Liu,Qizhong Li,Xian Zhang,Marina L. Kosinova,Takashi Goto,Song Zhang
SiC epitaxial wafers offer enormous potential for a wide range of telecom technologies due to their excellent properties. The experimental process was simulated by software, and the contour of gas flow velocity and raw material mass fraction inside the chamber were obtained. SiC films were epitaxially grown on 4H-SiC single crystalline substrates at different temperatures for one batch, using SiCl4, CH4, and H2as precursors. With increasing temperature, the crystal phase changed from 4H-SiC at 1773 K to a mixture of 4H- and 3C-SiC, and then a mixture of 3C-SiC and graphite at higher than 1923 K. The film was mainly (004)-oriented 4H-SiC and (111)-oriented 3C-SiC.Keywords:SiC film;high-frequency induction-heated halide CVD;crystalline phases distribution;microstructure;orientation
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