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Cs3Cu2I5
ADVANCED MATERIALS · 2026 · IF 26.8

Dual-Functional Optoelectronic Devices Composed of Cs3Cu2I5/Graphene/Ge Multi-Heterostructures Enabling Deep-Ultraviolet Synaptic Behavior and Near-Infrared Photodetection

Chao Xie,Deng Ke,Shunzi Li,Yuhang Shan,Can Fu,Xingang Ren,Liangpan Yang,Wenhua Yang,Zhixiang Huang

Multi-functional optoelectronic devices that integrate the capacities of neuromorphic processing and photodetection are of pivotal importance for advancing optoelectronic techniques. Here, we present a dual-functional optoelectronic device based on a multi-heterostructure of Cs 3 Cu 2 I 5 /graphene/Ge, which realizes high-performance deep-ultraviolet (DUV) synaptic behavior and self-driven near-infrared (NIR) photodetection simultaneously. On one hand, the device leverages the photogating effect in the Cs 3 Cu 2 I 5 /graphene heterostructure to produce persistent photo-conductivity, emulating synaptic behavior upon DUV light stimulation. Electron trapping by introducing B 4 PyMPM as capture sites significantly promotes spatial divorcement of photocarriers, guaranteeing remarkably improved synaptic characteristics. The utilizations in DUV fingerprint recognition with an accuracy of 97.8%, and optoelectronic reservoir computing with recognition accuracy reaching 100% for three 4-bit numbers are demonstrated. On the other hand, the device utilizes the photovoltaic effect in the graphene/Ge heterostructure to generate photoresponse at zero working bias, enabling self-driven photodetection upon NIR light illumination. The wide-bandgap Cs 3 Cu 2 I 5 functions as an effective NIR anti-reflection layer to induce a strong light trapping effect, giving rise to boosted photoresponse properties. The excellent photoresponse supports the device in performing single-pixel NIR optical imaging. It is believed that this work is inspiring to the design of high-performance multi-functional optoelectronic devices toward integrated and intelligence applications.

CAS / MDL: 7681-65-4
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ACS Applied Nano Materials · 2024 · IF 5.3

Achieving High Quantum Efficiency in Cs3Cu2I5 Nanocrystals by the A-Site Ion Substitution for Flexible Blue Electroluminescence Devices and Enhanced Photovoltaic Cells

Xiu-Rong Yuan,Xiao-Song Zhang,Xing-Yao Zhao,Xiao-Kai Gong,Li−Na Kong,Bao-Zeng Zhou,Jian-Ping Xu,Lan Li

The outstanding photovoltaic characteristics of lead halide perovskites have made them a potential class of materials for upcoming optoelectronic applications. However, a major obstacle to the practical use of lead halide perovskites is the inherent toxicity and low environmental stability of lead. The exploration and development of nontoxic and stable alternatives for lead halide perovskites has therefore become an urgent and critical goal in the field of photovoltaics. In this paper, blue lead-free Cs3Cu2I5 nanocrystals (NCs) with bright emission were prepared by using KI as a metal additive through an improved thermal injection strategy. A breakthrough in the previous photoluminescence quantum (PLQY) yield of 97.2% was achieved when the content of KI was optimized to be 8%. Detailed experimental and theoretical studies have also been combined to conclude that the KI additive acts to passivate surface defects and that the broad-spectrum blue emission originates from self-trapped excitons. When combined with commercial indium tin oxide (ITO), the device may achieve broad-spectrum blue electroluminescence. Its low production cost and simple structure are its main features. Furthermore, we were able to improve the utilization of high-energy ultraviolet energy and overcome the weak absorption of short-wavelength silicon-based solar cells by using nanocrystals as down-conversion luminescent materials in conjunction with silicon-based solar cells. This increased the photoelectric conversion efficiency (PCE) for the solar cells through approximately 0.5%. The result was achieved through the principle of down-conversion. Therefore, fully inorganic metal halide Cs3Cu2I5: K+ nanocrystals have great potential for future electroluminescence and photovoltaic applications.

研究领域: 材料科学 · 光电子学 · 光伏技术
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Nano Energy · 2022 · IF 19.069

Deep-blue emissive Cs3Cu2I5 perovskites nanocrystals with 96.6% quantum yield via InI3-assisted synthesis for light-emitting device and fluorescent ink applications

Fei Gao,Xiaonan Zhu,Qiushi Feng,Weiheng Zhong,Weizhen Liu,Haiyang Xu,Yichun Liu

Lead-free metal halide perovskites are promising materials for future optoelectronic application , which have recently attracted great attention for their environmental-friendliness and excellent light emission properties. However, the development of deep-blue emission lead-free halide perovskite nanocrystal is still far behind in performance in comparison with its red/green counterparts. Herein, the lead-free Cs 3 Cu 2 I 5 nanocrystals are prepared via a modified hot-injection strategy. By adding InI 3 as precursor, the synthesized Cs 3 Cu 2 I 5 single-phase nanocrystals show a bright deep-blue emission peaked at ~440 nm, with a record high photoluminescence quantum yield (PL QY) up to 96.6% at an optimized InI 3 content of 0.15 mmol. The InI 3 additive contributes to the high PL QY through both iodide vacancy reparation of I - ions and size-controlled growth of In 3+ ions. First principle calculations reveal that the broadband blue emission originates from self-trapped excitons in Cs 3 Cu 2 I 5 , which are formed due to the excited-state lattice expansion and Cu-I bond lengthening of [Cu 2 I 5 ] 3- cluster under light excitation . The good stabilities of these Cs 3 Cu 2 I 5 nanocrystals against heat, water, UV irradiation and environmental storage are also investigated experimentally and theoretically in detail. For application demonstration, light-emitting devices are manufactured by using these Cs 3 Cu 2 I 5 nanocrystals powder as phosphor, which exhibit good working stability with a half-lifetime over 300 h. Besides, the Cs 3 Cu 2 I 5 nanocrystals solution is also utilized as fluorescent ink, and the printed patterns can maintain anti-counterfeiting features even after treatment by heating and long-term environmental storage, indicating the robustness of these Cs 3 Cu 2 I 5 nanocrystals for potential anti-counterfeiting application.

研究领域: 材料科学 · 光学工程 · 化学
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ACS Applied Materials & Interfaces · 2024 · IF 8.3

High-Resolution X-ray Image from Copper-Based Perovskite Hybrid Polymer

Xue Hao,Lin Nie,Xuanyu Zhu,Guoqiang Zeng,Chunhai Liu,Zhaowei Teng,Haozhe Liu,Yang Yue,Xue Yu,Ting Wang

Cs3Cu2I5 nanocrystals (NCs) are considered to be promising materials due to their high photoluminescence efficiency, lack of lead toxicity, and X-ray responsiveness. However, during the crystallization process, NCs are prone to agglomeration and exhibit uneven size distribution, resulting in several light scattering that severely affect their imaging resolution. Herein, we successfully developed a high-resolution scintillator film by growing copper-based perovskite NCs within a hybrid polymer matrix. By leveraging the ingenious integration of polyvinylidene fluoride (PVDF) and polymethyl methacrylate (PMMA), the size and distribution uniformity of Cs3Cu2I5 NCs can be effectively controlled. Consequently, a high spatial resolution of 14.3 lp mm–1 and a low detection limit of 105 nGy s–1 are achieved, and the scintillator film has excellent flexibility and stability. These results highlight the promising application of Cs3Cu2I5 scintillator films in low-cost, flexible, and high-performance medical imaging.

研究领域: 材料科学 · 纳米技术 · 医学成像
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