JOURNAL OF POWER SOURCES
·
2020
·
IF 8.247
Xinan Shi,Lijian Huang,Daocheng Pan
In this research, a facile and environmentally friendly solution approach is developed to deposit Cu 2 ZnSn(S,Se) 4 thin films by addition of n -butylammonium butyrate ionic liquid . n -Butylammonium butyrate plays a critical role in solution deposition of Cu 2 ZnSnS 4 precursor thin film. We find that liquid n -butylammonium butyrate can dissolve a number of metal oxides , including Cu 2 O, ZnO, and SnO as well as various metal chlorides , metal nitrates and metal acetates. Smell-free Cu 2 ZnSnS 4 precursor solution is synthesized by dissolving Cu 2 O, ZnO, SnCl 2 and thiourea in an ethanol solution of n -butylammonium butyrate. Thermally degradable n -butylammonium butyrate can be completely removed by a low-temperature sintering process , forming high quality Cu 2 ZnSnS 4 nanoparticle thin film. A power conversion efficiency of 8.79% is obtained by this facile and green solution approach.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2022
·Vol. 10
·期 41
·15638-15646
·
IF 8.067
Xiang Li,Xinghuan Hu,Hua Liao,Shuai Yang,Xinyu Li,Qiulian Li,Xin Liu,Yonggang Zhao,Shurong Wang
In this study, a simple and reproducible two-step annealing process was demonstrated to prepare Cu2ZnSn(S,Se)4 (CZTSSe) thin film with band-gap grading by selenization followed by post-sulfo-selenization (PSS) treatment. The effects of PSS treatment on the composition and electrical properties of the CZTSSe thin film were investigated. The crystal structure, surface morphology, surface roughness and element composition of the CZTSSe thin film were characterized by GIXRD, SEM, AFM and EDS tests. The composition of elements at different depths of the thin film was also investigated. It was confirmed that CZTSSe thin film with high sulfur element content on the surface and low at the bottom were obtained after PSS treatment. The electrical performance of the CZTSSe solar cells was measured by Hall test, EQE and J–V. The results showed that the power conversion efficiency (PCE) of the CZTSSe thin film without PSS treatment was only 7.62%, while the PCE of the CZTSSe thin film after PSS treatment increased to 10.11%.
研究领域:
材料科学
·
光伏技术
·
半导体薄膜
✓ 已验证
DOI
高影响因子
Solar RRL
·
2023
·Vol. 7
·期 24
·2300838
·
IF 7.9
Ding Ma,Mengge Li,Bin Yao,Yongfeng Li,Zhanhui Ding,Jiayong Zhang,Chunkai Wang,Yuting Sun,Yue Liu,Xiaofei Sun,Yan Zhu
It is known that high carrier recombination at the p–n junction interface and low carrier separation ability (CSA) are two main problems resulting in low power conversion efficiency (PCE) of the Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cell. To resolve these problems, one CZTSSe solar cell is prepared through substituting B-doped CdS for CdS in a solar cell with the conventional structure of Ag/ITO/ZnO/CdS/CZTSSe/Mo/SLG and annealing B-doped CdS/CZTSSe/Mo/SLG prior to deposition of ZnO, ITO, and Ag electrode. By optimizing the B doping content in the CdS and annealing temperature and time of the B-doped CdS/CZTSSe, lattice mismatch between CdS and CZTSSe is decreased and width of depletion region is increased, leading to reduction in interfacial recombination, enhancement in CSA and intensity of incident light passing through the B-doped CdS, and so increase in PCE from 7.89% of CZTSSe solar cell using CdS as buffer layer to 10.62%. A mechanism of the increment of the PCE induced by B doping and annealing is suggested. This work proposes a method of increasing PCE of CZTSSe solar cell and advances a deeper understanding of the mechanisms behind various parameters in CZTSSe solar cells through theoretical analysis and calculations.
研究领域:
材料科学
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光伏技术
·
半导体物理
✓ 已验证
DOI
高影响因子
Advanced Energy Materials
·
2024
·
IF 24.4
Ang Liang,Yue Jian,Yun Zhao,Shuo Chen,Jun Zhao,Zhuanghao Zheng,Jingting Luo,Hongli Ma,Xianghua Zhang,Zhenghua Su,Guangxing Liang
Enhancing the efficiency of Cu 2 ZnSn (S, Se) 4 (CZTSSe) thin-film solar cells requires the development of well-crystallized light-absorbing layers. A deep understanding of the role of precursor solution chemistry in film nucleation and crystal growth processes is essential. Insights into these processes enable the development of innovative strategies to enhance absorber quality, minimize detrimental bulk defects, and ultimately improve device performance. This study elucidates the condensation reactions between thiourea and metal cations, as well as the alcoholysis of 2-methoxyethanol (MOE), at different concentrations of precursor solutions. The primary focus of this study is implementing a simple and environmentally friendly innovative spin-coating strategy, aimed at optimizing Cu 2 ZnSnS 4 (CZTS) precursor films and adjusting the Se content within the film bulk to promote grain growth during selenization. This strategy effectively improves absorber morphology while suppressing the formation of deep-level defects, thereby enhancing carrier transport in both interfacial and bulk regions of the absorber layer. Consequently, CZTSSe absorbers with enhanced crystallinity and reduced defects are synthesized, resulting in a solar cell with an impressive efficiency of 14.10%. These findings underscore the potential for creating highly efficient kesterite CZTSSe solar cells through the manipulation of precursor solution chemistry using environmentally friendly solvents.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2024
·
IF 5.8
Yue Liu,Chunkai Wang,Ding Ma,Mengge Li,Yuting Sun,Xiaofei Sun,Yan Zhu,Bin Yao,Yongfeng Li,Zhanhui Ding
It is proved that secondary phases, such as Cu 2 Se, and ZnSe etc., and MoSe 2 layer can form at Cu 2 ZnSn(S,Se) 4 (CZTSSe)/Mo electrode interface, due to that Mo electrode reacts with CZTSSe and Se vapor during selenization process. The secondary phases and MoSe 2 with inappropriate thickness can decrease power conversion efficiency (PCE) of CZTSSe solar cell. In this work, a simple method was proposed to suppress the reaction between CZTSSe and Mo, and to optimize the thickness of MoSe 2 . This was achieved by growing a layer of Mo oxide in situ on the Mo electrode surface through soaking the Mo electrode in H 2 O 2 . The Mo oxide layer consisted of MoO 3 , MoO x and MoO 2 . It could suppress the reaction between Mo and CZTSSe, thus preventing the formation of secondary phases in CZTSSe. By further tuning the soaking time, the thickness and density of the Mo oxide layer were optimized, resulting in an optimized thickness of the MoSe 2 layer and a significant improvement in the contact quality at both the front and back interfaces. This improvement is beneficial for suppressing carrier recombination and reducing contact resistance. Furthermore, the Cu/(Zn+Sn) ratio in CZTSSe was optimized, leading to an expansion of the depletion region width. As a result, the reverse saturation current density and series resistance decrease, while the photogenerated current density increases. This ultimately led to a rise in PCE from 7.66% for CZTSSe solar cells with Mo electrodes that were not soaked to 8.95% for those with Mo electrodes soaked for 20 s.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2016
·
IF 3.15
Ruixin Ma,Fan Yang,Shina Li,Xiaoyong Zhang,Xiang Li,Shiyao Cheng,Zilin Liu
CZTSSe is an important earth abundant collection of materials for the development of low cost and high efficiency thin film solar cells. This work developed a simple non-vacuum-based route to fabricate CZTSSe absorber films. This was demonstrated by first synthesizing Cu 2 ZnSnS 4 (CZTS) nano-crystalline based on solid-phase synthesis. Then a stable colloidal ink composed of CZTS nano-crystalline was blade coated on Mo-coated substrates followed by an annealing process under Ar atmosphere. After CZTS films formation, the films were sintered into CZTSSe absorber films by exposing them under Selenium vapor. The formation of a kesterite type CZTS was confirmed using X-ray diffraction and Raman scattering measurements. The band gap of CZTSSe absorber films was determined to be 1.26 eV, which was appropriate for use as an absorber layer in thin film solar cells. The CZTSSe absorber films showed a good photovoltatic performance, demonstrating this simple approach had great potential for CZTSSe solar cell production.
研究领域:
材料科学
·
光伏技术
·
薄膜技术
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纳米材料
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可再生能源
✓ 已验证
DOI
高影响因子
Nanomaterials
·
2022
·Vol. 12
·期 17
·2942
·
IF 5.719
Fancong Zeng,Yingrui Sui,Meiling Ma,Na Zhao,Tianyue Wang,Zhanwu Wang,Lili Yang,Fengyou Wang,Huanan Li,Bin Yao
Cu2Ni0·05Zn0·95Sn(S,Se)4(CNZTSSe) films were synthesized on Mo-coated glass substrates by the simple sol–gel means combined with the selenization process, and CNZTSSe-based solar cells were successfully prepared. The effects of selenization temperature on the performance and the photoelectric conversion efficiency (PCE) of the solar cells were systematically studied. The results show that the crystallinity of films increases as the selenization temperature raises based on nickel (Ni) doping. When the selenization temperature reached 540 °C, CNZTSSe films with a large grain size and a smooth surface can be obtained. The Se doping level gradually increased, and Se occupied the S position in the lattice as the selenization temperature was increased so that the optical band gap (Eg) of the CNZTSSe film could be adjusted in the range of 1.14 to 1.06 eV. In addition, the Ni doping can inhibit the deep level defect of SnZnand the defect cluster [2CuZn+ SnZn]. It reduces the carrier recombination path. Finally, at the optimal selenization temperature of 540 °C, the open circuit voltage (Voc) of the prepared device reached 344 mV and the PCE reached 5.16%.Keywords:solar cell;selenidation temperature;CNZTSSe;sol gel
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
RSC Advances
·
2018
·Vol. 8
·期 8
·4119-4124
·
IF 2.936
Pengpeng Zhang,Qing Yu,Xue Min,Linbao Guo,Jiangjian Shi,Xiangyun Zhao,Dongmei Li,Yanhong Luo,Huijue Wu,Qingbo Meng,Sixin Wu
The annealing temperature of solution-processed Cu2ZnSn(S,Se)4 (CZTSSe) precursor films has been carefully optimized for favorable selenization. At higher temperature, more solvent will be removed, and the crystallinity of the precursor films can be improved. It is found that, although the crystallinity of selenized film is continuously enhanced by increasing the temperature, a dense CZTSSe film with round and large grains can only be achieved at medium high temperature ranging from 350 to 400 °C. Further investigation reveals that, in this regime, the carrier and defect densities are obviously reduced, leading to average photoelectric conversion efficiency (PCE) improved from 5.1% to 9.4%. An optimal annealing temperature of 380 °C is obtained and up to 10.04% of photoelectric conversion efficiency has been achieved.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2016
·
IF 6.333
Yanchun Yang,Xiaojiao Kang,Lijian Huang,Song Wei,Daocheng Pan
Earth abundant Cu 2 ZnSn(S,Se) 4 (CZTSSe) has been considered as one of the most promising thin film solar cell absorber candidates. Here, we develop a facile water-based precursor solution approach for depositing high-efficiency Cu 2 ZnSn(S,Se) 4 thin film solar cells. In this environmentally friendly approach, inexpensive elemental Cu, Zn, Sn and S powders are used as the starting materials and are dissolved in the aqueous solution of thioglycolic acid and methylamine, forming a homogeneous precursor solution for depositing Cu 2 ZnSnS 4 nanocrystal thin film . As-deposited CZTS nanocrystal thin films are selenized to form the large-grain CZTSSe absorber layers . It was found that Na doping plays an important role in the formation of the extremely dense and flat CZTSSe absorber layer, and fill factor can be significantly improved for Na-doped CZTSSe solar cells, which lead to a photoelectric conversion efficiency of 6.96% with an open-circuit voltage of 378 mV, a short current density of 28.17 mA cm −2 , and a fill factor of 65.4%.
研究领域:
材料科学
·
新能源材料
·
半导体薄膜
·
光伏技术
·
无机功能材料
✓ 已验证
DOI
高影响因子
Chinese Physics B
·
2018
·Vol. 27
·期 1
·016402
·
IF 1.321
Xue Min,Jiangjian Shi,Linbao Guo,Qing Yu,Pengpeng Zhang,Qingwen Tian,Dongmei Li,Yanhong Luo,Huijue Wu,Qingbo Meng,Sixin Wu
The Zn/Sn ratio in Cu2ZnSn(S, Se)4 (CZTSSe) films has been regulated to control the composition-related phase, defect, and photoelectric properties for high performance kesterite solar cells. It is found that the increase in the Zn/Sn ratio can slightly narrow the energy band gap to extend the light absorption range and improve the photocurrent. Optimal Zn/Sn ratio of 1.39 in CZTSSe film is obtained with the least secondary phase, the lowest defect density, and the longest charge recombination lifetime. Up to 10.1% photoelectric conversion efficiency has been achieved by this composition regulation.
研究领域:
光伏技术
·
材料科学
·
半导体材料
·
可再生能源
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2020
·
IF 6.984
Bin Xu,Chuanhe Ma,Xiaoshuang Lu,Yulin Liu,Qiao Zhang,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun
Cu 2 ZnSn(S,Se) 4 (CZTSSe) has received considerable attention as the promising absorber for thin-film solar cells. For traditional selenization process, the issues of Sn-loss, lower S/(S + Se) ratio, and unsuitable back contact interface extensively exist in CZTSSe solar cells. In present work, SnSe and SnS powder is introduced during selenization process, respectively. The effects of SnSe and SnS powder on CZTSSe films and the Mo/CZTSSe interface have been comprehensively studied. We discover that SnS not only can provide the Sn-contained vapor in selenization process but also offer S-vapor. Due to the presence of Sn-contained vapor, the number of voids in the CZTSSe absorber and Mo/CZTSSe interface decreases remarkably and the Sn-loss is effectively suppressed. The thickness of Mo(S,Se) 2 layer is significantly reduced, and the S/(S + Se) ratio in CZTSSe bulk obviously increases owing to the presence of S-vapor. As a consequence, the open-circuit voltage and fill factor of the solar cell significantly increase and the CZTSSe solar cell with efficiency of 10.07% (total area) is successfully fabricated.
研究领域:
材料科学
·
能源技术
✓ 已验证
DOI
高影响因子
SOLAR ENERGY
·
2019
·
IF 4.674
Huiling Cai,Liquan Yao,Yingsen Xia,Chunyan Dao,Jianmin Li,Limei Lin,Zhiping Huang,Guilin Chen
In this work, a three-step (sulfurization-selenization-sulfurization) annealing process was designed to optimize the surface constitution of Cu 2 ZnSn(S, Se) 4 (CZTSSe) thin films, which was prepared by oxide nanoparticles-based approach. The devices with the Mo/CZTSSe/CdS/ZnMgO/ZnO:Al/Al structure were fabricated and their performances were studied. The additional post-sulfurization with low toxicity sulfur powder has negligible impact on the structure, morphology and composition of CZTSSe bulk, however, it improves open circuit voltage of device significantly. The open circuit voltage can be increased significantly from 408 mV (without surface sulfurization) to 497 mV (with surface sulfurization). This is benefited from the increase of surficial sulfur content and the broadening of the surface band-gap of the CZTSSe thin film. The result is confirmed by X-ray photoelectron spectroscopy analysis. Such a crucial three-step annealing process promotes the power conversion efficiency from 4.71% (2-step) to 6.37% (3-step), which is the champion efficiency of oxide precursor derived CZTSSe solar cell.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）